SCT4036KW7 (新产品) [ROHM]
SCT4036KW7是一款1200V、40A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。;型号: | SCT4036KW7 (新产品) |
厂家: | ROHM |
描述: | SCT4036KW7是一款1200V、40A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。 开关 栅 |
文件: | 总17页 (文件大小:1428K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SCT4036KW7
N-channel SiC power MOSFET
Datasheet
lOutline
TO-263-7L
VDSS
1200V
36mΩ
40A
RDS(on) (Typ.)
*1
ID
PD
150W
lInner circuit
● Features
(Tab)
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
(1) Gate
(2) Driver Source
(3)~(7) Power Source
(Tab) Drain
*1
(1)
(2)
*1 Body Diode
(3)~(7)
5) Simple to drive
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
● Application
Embossed tape
Packing
・Solar inverters
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
330
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
24
1000
Type
TL
Marking
SCT4036KW7
lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified.)
Parameter
Symbol
VDSS
Value
1200
40
Unit
V
Drain - source voltage
Tc = 25°C
A
Continuous drain
and source current
*1
VGS = VGS_on
ID, IS
Tc = 100°C
28
A
*2
VGS = VGS_on Tc = 25°C
Pulsed drain current
84
A
ID,pulse
*1,*3
Body diode pulsed forward current
Body diode surge forward current
Gate - source voltage (DC)
40
A
IS,pulse
Tc = 25°C
VGS = 0 V
*1,*4
84
A
IS,pulse
VGSS_DC
-4 to +21
-4 to +23
+15 to +18
0
V
V
*5
Gate - source surge voltage (tsurge < 300ns)
Recommended turn-on gate - source drive voltage
Recommended turn-off gate - source drive voltage
Virtual junction temperature
VGSS_surge
*6
V
VGS_on
VGS_off
Tvj
V
175
°C
°C
Tstg
Range of storage temperature
-40 to +175
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TSQ50252-SCT4036KW7
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SCT4036KW7
Datasheet
●Electrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
V(BR)DSS
Conditions
VGS = 0 V, I =
Unit
V
Min.
Max.
-
9.2mA
D
Drain - Source breakdown
voltage
Tvj = 25°C
VGS = 0 V, VDS
1200
-
=1200V
Zero Gate voltage
Drain current
IDSS Tvj = 25°C
Tvj = 150°C
-
-
1
10
-
80
-
μA
IGSS+ VGS
=
=
, VDS = 0V
, VDS = 0V
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
+21V
-4V
-
100
-100
4.8
nA
nA
V
IGSS- VGS
-
-
*7
VDS = 10V, I =
11.1mA
= 21A
2.8
-
VGS(th)
RDS(on)
RG
D
VGS = 18V, ID
Tvj = 25°C
Static Drain - Source
on - state resistance
*8
-
-
-
36
72
1
47
-
mΩ
Ω
Tvj = 150°C
Gate input resistance
f = 1MHz, open drain
-
lThermal resistance
Values
Typ.
Parameter
Symbol
Unit
K/W
Min.
-
Max.
1.0
*9
Thermal resistance, junction - case
0.79
RthJC
lTypical Transient Thermal Characteristics
Symbol
Rth1
Value
5.1 ×10
3.6 ×10
3.8 ×10
Unit
K/W
Symbol
Cth1
Value
8.8 ×10
4.5 ×10
1.3 ×10
Unit
-2
-1
-1
-4
-3
-1
Rth2
Cth2
Ws/K
Rth3
Cth3
Rth,n
Rth1
Tj
Tc
PD
Cth1
Cth2
Cth,n
Ta
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TSQ50252-SCT4036KW7
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SCT4036KW7
Datasheet
●Electrical characteristics (Tvj = 25°C unless otherwise specified)
Values
Typ.
11
Parameter
Symbol
Conditions
VDS = 10V, ID
Unit
S
Min.
Max.
*8
Transconductance
= 21A
-
-
-
-
-
-
-
-
gfs
Ciss VGS = 0V
Coss VDS
Input capacitance
2335
70
=
Output capacitance
Reverse transfer capacitance
800V
pF
pF
Crss
f = 1MHz
VGS = 0V
5
Effective output capacitance,
energy related
Co(er)
-
84
-
VDS
VDS
=
=
0V to 800V
800V
*8
Total Gate charge
Gate - Source charge
Gate - Drain charge
Turn - on delay time
Rise time
-
-
-
-
-
-
-
-
-
91
20
-
-
-
-
-
-
-
-
-
Qg
ID =
21A
*8
nC
Qgs
VGS
=
18V
See Fig. 1-1, 1-2.
*8
24
Qgd
VDS
=
800V
*8
8.1
15
td(on)
ID =
21A
*8
tr
VGS
=
+18V / 0V
3.3Ω, L = 250μH
ns
RG =
*8
Turn - off delay time
Fall time
29
td(off)
Eon includes diode
reverse recovery
Lσ = 50nH, Cσ = 10pF
See Fig. 2-1, 2-2, 2-3.
*8
9.6
239
26
tf
*8
Turn - on switching loss
Turn - off switching loss
Eon
μJ
*8
Eoff
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Datasheet
lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified)
Values
Parameter
Forward voltage
Symbol
Conditions
VGS = 0V, IS
Unit
Min.
-
Typ.
3.3
Max.
-
*8
= 21A
V
VSD
IF =
21A
*8
Reverse recovery time
-
-
-
9.2
140
31
-
-
-
ns
trr
VR =
800V
*8
Reverse recovery charge
Peak reverse recovery current
nC
A
Qrr
di/dt = 3700A/μs
Lσ = 50nH, Cσ = 10pF
See Fig. 3-1, 3-2.
*8
Irrm
*1 Limited by maximum Tvj and for Max. RthJC
.
*2 Pulse width and duty cycle are limited by Tvj,max
.
*3 Only for body-diode, Repititive pulse, PW ≤ 1.5μs, Duty cycle ≤ 5%
*4 When used as a protective function, PW ≤ 10μs
*5 Example of acceptable VGS waveform
tsurge
+VGSS_surge
+VGSS_DC
tsurge
-VGSS_DC
-VGSS_surge
Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.
Please be advised not to use SiC-MOSFETs with VGS below 10V as doing so may cause
thermal runaway.
*6
*7 Tested after applying VGS = 21V for 100ms.
*8 Pulsed
Measured conformable to JESD51-14.
*9
See the application note "rthjc_measurement_and_usage_an-e.pdf". Link
URL: https://fscdn.rohm.com/en/products/databook/applinote/discrete/common/rthjc_measurement_and_usage_an-e.pdf
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TSQ50252-SCT4036KW7
4.Apr.2023 - Rev.003
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SCT4036KW7
Datasheet
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
1000
160
140
120
100
80
Operation in this area is limited by RDS(on)
PW
100
10
1
<100ns*
1μs*
10μs*
100μs
1ms
60
PW decrease
40
Tc = 25ºC
Single Pulse
*Calculation (PW 10μs)
20
10ms
0
0.1
25
75
125
175
0.1
1
10
100 1000 10000
Case Temperature : TC [°C]
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Impedance vs. Pulse Width
1
0.1
0.01
Duty =
1
0.5
0.2
Duty increase
0.1
0.05
0.02
0.01
Single pulse
0.001
Tc = 25ºC
0.0001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1
Pulse Width : PW [s]
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Datasheet
lElectrical characteristic curves
T = 25ºC Typical Output
Characteristics(I)
T = 25ºC Typical Output
Characteristics(II)
Fig.4
40
Fig.5
20
vj
vj
Tvj = 25oC
tp ≤ 200μs
Tvj = 25oC
tp ≤ 200μs
30
20
10
0
15
10
5
VGS = 6~18V, 2V step
VGS increase
VGS = 6~18V, 2V step
VGS increase
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
T = 25ºC 3rd Quadrant Characteristics
Fig.6
0
vj
Tvj = 25oC
tp ≤ 200μs
VGS = -4V
VGS = 0V
VGS = 15V
VGS = 18V
-10
-20
-30
-40
VGS increase
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
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Datasheet
lElectrical characteristic curves
T = 150ºC Typical Output
Characteristics(I)
T = 150ºC Typical Output
Characteristics(II)
Fig.7
40
Fig.8
20
vj
vj
Tvj = 150oC
Tvj = 150oC
tp ≤ 200μs
tp ≤ 200μs
30
20
10
0
15
10
5
VGS = 6~18V, 2V step
VGS increase
VGS = 6~18V, 2V step
VGS increase
0
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Tvj = 150ºC 3rd Quadrant
Characteristics
Fig.10 Body Diode Forward Voltage
vs. Gate - Source Voltage
Fig.9
0
6
Tvj = 150oC
tp ≤ 200μs
ID = 21A
tp ≤ 200μs
5
4
3
2
1
0
VGS = -4V
VGS = 0V
VGS = 15V
VGS = 18V
-10
-20
-30
-40
Tvj=150ºC
VGS increase
Tvj=25ºC
-10
-8
-6
-4
-2
0
-4
0
4
8
12
16
20
Drain - Source Voltage : VDS [V]
Gate - Source Voltage : VGS [V]
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SCT4036KW7
Datasheet
lElectrical characteristic curves
Fig.11 Typical Transfer Characteristics (I)
100
Fig.12 Typical Transfer Characteristics (II)
40
30
20
10
0
VDS = 10V
tp ≤ 200μs
VDS = 10V
tp ≤ 200μs
10
1
Tvj increase
Tvj increase
Tvj = 150oC
0.1
Tvj = 150oC
Tvj = 75oC
Tvj = 25oC
Tvj = -25oC
Tvj = 75oC
Tvj = 25oC
Tvj = -25oC
0.01
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Virtual Junction Temperature
Fig.14 Transconductance vs. Drain Current
6
100
VDS = 10V
tp ≤ 200μs
ID = 11.1mA
10V
=
VDS
5
4
3
2
1
0
10
1
Tvj = 150oC
Tvj = 75oC
Tvj = 25oC
Tvj increase
Tvj = -25oC
0.1
-50
0
50
100
150
200
0.1
1
10
100
Virtual Junction Temperature :
Tvj [ºC]
Drain Current : ID [A]
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Datasheet
lElectrical characteristic curves
Fig.16 Static Drain - Source On - State
Resistance vs. Virtual Junction
Temperature
Fig.15 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.14
0.14
Tvj = 25oC
tp ≤ 200μs
VGS = 18V
tp ≤ 200μs
0.12
0.12
ID = 32A
ID = 32A
0.10
0.10
ID = 21A
ID = 21A
0.08
0.08
ID = -21A
ID = -21A
0.06
0.04
0.06
0.04
ID increase
0.02
ID increase
0.02
0.00
0.00
-50
0
50
100
150
200
8
10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Virtual Junction Temperature :
Tvj [ºC]
Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Virtual Junction
Temperature
1.1
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
1
Tvj = 150oC
Tvj = 125oC
Tvj = 75oC
Tvj = 25oC
Tvj = -25oC
0.1
1.0
Tvj increase
0.01
VGS = 0 V
VGS = 18V
tp ≤ 200μs
9.2 mA
ID =
0.9
0.001
-50
0
50
100
150
200
1
10
100
Drain Current : ID [A]
Virtual Junction Temperature :
Tvj [ºC]
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Datasheet
lElectrical characteristic curves
Fig.19 Typical Capacitance
vs. Drain - Source Voltage
C
oss Stored Energy
Fig.20
30
10000
1000
100
Tvj = 25ºC
25
20
15
10
5
Ciss
Coss
10
Tvj = 25oC
f = 1MHz
VGS = 0V
1
Crss
0
0
200
400
600
800
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
20
Tvj = 25°C
VDD= 800V
ID = 21A
15
10
5
0
0
50
100
Total Gate Charge : Qg [nC]
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SCT4036KW7
Datasheet
lElectrical characteristic curves
Fig.22 Typical Switching Time
vs. External Gate Resistance
Fig.23 Typical Switching Loss
vs. Drain - Source Voltage
120
800
Tvj = 25°C
ID = 21A
VDD= 800V
Tvj = 25°C
ID = 21A
VGS= +18V/0V
RG = 3.3Ω
100
td(off)
VGS= +18V/0V
600
400
200
0
L = 250μH
L = 250μH
80
60
40
20
0
td(on)
Eon
tr
tf
Eoff
0
5
10
15
20
200
400
600
800
External Gate Resistance : RG [Ω]
Drain - Source Voltage : VDS [V]
Fig.24 Typical Switching Loss
vs. Drain Current
Fig.25 Typical Switching Loss
vs. External Gate Resistance
800
800
Tvj = 25°C
Tvj = 25°C
VDD= 800V
ID = 21A
VGS= +18V/0V
VDD= 800V
Eon
RG = 3.3Ω
600
400
200
0
600
400
200
0
VGS= +18V/0V
L = 250μH
L = 250μH
Eon
Eoff
Eoff
30
0
5
10
15
20
0
10
20
40
Drain Current : ID [A]
External Gate Resistance : RG [Ω]
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Datasheet
●Measurement circuits and waveforms
Fig.1-1 Gate Charge Measurement Circuit
Fig.1-2 Gate Charge Waveform
Fig.2-1 Switching Characteristics Measurement Circuit
Fig.2-2 Waveforms for Switching Time
Fig.2-3 Waveforms for Switching Energy Loss
Eon
=
I ∙ VDS dt
Eoff
=
ID ∙ VDS dt
D
Vsurge
Irr
VDS
ID
Fig.3-1 Reverse Recovery Time Measurement Circuit
Fig.3-2 Reverse Recovery Waveform
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Datasheet
lPackage Dimensions
Unit: mm
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Datasheet
RECOMMENDED FOOTPRINT DIMENSIONS
Unit: mm
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Datasheet
lDie Bonding Layout
: Die position
・Front view of the packaging.
・Dimensions are design values.
・If the heat sink is to be installed, it should be in contact with the die bonding point.
Unit: mm
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
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相关型号:
SCT4045DE
SCT4045DE是一款有助于应用产品实现小型化和更低功耗的SiC MOSFET。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4045DEHR
SCT4045DEHR是一款750V、34A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4045DR
SCT4045DR是有助于应用产品实现小型化和更低功耗的SiC MOSFET。该产品采用带有驱动器源极引脚的封装形式,可更大程度地激发出SiC MOSFET的高速开关性能。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4045DRHR
SCT4045DRHR是一款750V、34A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4045DW7 (新产品)
SCT4045DW7是一款750V、31A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4045DW7HR
SCT4045DW7HR是一款750V、31A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4062KE
SCT4062KE是一款有助于应用产品实现小型化和更低功耗的SiC MOSFET。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4062KEHR
SCT4062KEHR是一款1200V、26A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4062KR
SCT4062KR是一款有助于应用产品实现小型化和更低功耗的SiC MOSFET。该产品采用带有驱动器源极引脚的封装形式,可更大程度地激发出SiC MOSFET的高速开关性能。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4062KRHR
SCT4062KRHR是一款1200V、26A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4062KW7 (新产品)
SCT4062KW7是一款1200V、40A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
SCT4062KW7HR
SCT4062KW7HR是一款1200V、24A的Nch SiC功率MOSFET。该产品采用沟槽结构实现了更低的导通电阻,是符合AEC-Q101标准的高可靠性车规级产品。ROHM的第4代SiC MOSFETSCT4系列是改善了短路耐受时间并实现了业界超低导通电阻的第4代产品。与以往产品相比,该系列产品的导通电阻降低了约40%,开关损耗降低了约50%。另外,该产品还支持更容易处理的15V栅-源电压,使应用产品的设计更容易。
ROHM
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