S2305 [ROHM]
S2305是基于SiC的平面型MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。;
| 型号： | S2305 |
| 厂家： | 
ROHM |
| 描述： | S2305是基于SiC的平面型MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 局域网 开关 光电二极管 |
| 文件： | 总12页 (文件大小：792K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S2305
N-channel SiC power MOSFET bare die
Data Sheet
VDSS
RDS(on) (Typ.)
ID
1200V
450mW
10A*1
lFeatures
lInner circuit
(D)
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
(G) Gate
(D) Drain
(S) Source
(G)
*1 Body Diode
5) Simple to drive
(S)
lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VDSS
Value
1200
10
Unit
V
Drain - Source voltage
*1
Tc = 25°C
Continuous drain current
A
ID
*2
Pulsed drain current
25
A
ID,pulse
VGSS
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Junction temperature
V
-6 to 22
*3
V
VGSS-surge
-10 to 26
Tj
175
°C
Tstg
Range of storage temperature
°C
-55 to +175
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
1/11
Data Sheet
S2305
lElectrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
1200
-
-
V
Zero gate voltage
drain current
IDSS
Tj = 25°C
-
1
2
10
-
A
Tj = 150°C
-
-
IGSS+
IGSS-
VGS = +22V, VDS = 0V
VGS = -6V, VDS = 0V
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
-
100
-100
4.0
nA
nA
V
-
-
VGS (th) VDS = VGS, ID = 0.9mA
1.6
2.8
VGS = 18V, ID = 3A
Static drain - source
on - state resistance
*4
Tj = 25°C
RDS(on)
-
-
-
450
610
25
556
mW
Tj = 125°C
-
-
RG
Gate input resistance
f = 1MHz, open drain
W
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
+26V
+22V
tsurge
0V
-6V
tsurge
-10V
*4 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
2/11
Data Sheet
S2305
lElectrical characteristics (Ta = 25°C)
Values
Typ.
1.0
Parameter
Symbol
Conditions
Unit
Min.
Max.
*4
VDS = 10V, ID = 3A
VGS = 0V
Transconductance
-
-
-
-
-
-
-
-
S
gfs
Ciss
Coss
Crss
Input capacitance
463
21
VDS = 800V
f = 1MHz
Output capacitance
pF
Reverse transfer capacitance
4
VGS = 0V
VDS = 0V to 500V
Effective output capacitance,
energy related
Co(er)
-
31
-
pF
ns
*4
VDD = 400V, VGS = 18V
ID = 3A
Turn - on delay time
Rise time
-
-
-
-
19
17
38
34
-
-
-
-
td(on)
*4
tr
*4
RL = 133W
Turn - off delay time
Fall time
td(off)
*4
RG = 0W
tf
VDD = 600V, ID=3A
VGS = 18V/0V
*4
Turn - on switching loss
Turn - off switching loss
-
-
47
17
-
-
Eon
RG = 0W, L=500H
*Eon includes diode
reverse recovery
J
*4
Eoff
lGate Charge characteristics (Ta = 25°C)
Values
Typ.
27
Parameter
Symbol
Conditions
Unit
Min.
Max.
*4
VDD = 400V
ID = 3A
Total gate charge
-
-
-
-
-
-
-
-
Qg
*4
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
7
nC
V
Qgs
*4
VGS = 18V
9
Qgd
V(plateau) VDD = 400V, ID = 3A
10.5
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
3/11
Data Sheet
S2305
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
-
Max.
Inverse diode continuous,
forward current
*1
-
-
10
25
A
A
IS
Tc = 25°C
Inverse diode direct current,
pulsed
*2
-
ISM
*4
VGS = 0V, IS = 3A
Forward voltage
-
-
-
-
4.3
19
-
-
-
-
V
ns
nC
A
VSD
*4
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
IF = 3A, VR = 400V
*4
13
Qrr
di/dt = 110A/s
*4
1.4
Irrm
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
4/11
Data Sheet
S2305
lElectrical characteristic curves
Fig.1 Typical Output Characteristics(I)
Fig.2 Typical Output Characteristics(II)
10
5
4
3
2
1
0
14V
20V
20V
18V
16V
18V
16V
8
14V
Ta=25ºC
12V
10V
Pulsed
6
4
2
0
12V
VGS= 8V
10V
Ta=25ºC
Pulsed
VGS= 8V
8
0
2
4
6
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.3 Tj = 150°C Typical Output
Fig.4 Tj = 150°C Typical Output
Characteristics(I)
Characteristics(II)
10
5
20V
Ta=150ºC
Pulsed
20V
18V
16V
18V
8
6
4
2
0
4
12V
10V
16V
14V
14V
12V
10V
3
2
VGS= 8V
VGS= 8V
1
0
Ta=150ºC
Pulsed
0
2
4
6
8
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
5/11
Data Sheet
S2305
lElectrical characteristic curves
Fig.5 Typical Transfer Characteristics (I)
Fig.6 Typical Transfer Characteristics (II)
10
10
9
8
7
6
5
4
3
2
1
0
VDS= 10V
Plused
VDS= 10V
Plused
1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
0.001
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.7 Gate Threshold Voltage
Fig.8 Transconductance vs. Drain Current
vs. Junction Temperature
5
10
VDS = 10V
ID = 1mA
VDS= 10V
Plused
4.5
4
3.5
3
1
2.5
2
0.1
1.5
1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.5
0
0.01
-50
0
50
100
150
200
0.01
0.1
1
10
Junction Temperature : Tj [°C]
Drain Current : ID [A]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
6/11
Data Sheet
S2305
lElectrical characteristic curves
Fig.9 Static Drain - Source On - State
Fig.10 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Resistance vs. Junction Temperature
1.4
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta=25ºC
Pulsed
VGS= 18V
Plused
1.2
1
ID = 6A
ID = 6A
0.8
ID = 3A
0.6
ID = 3A
0.4
0.2
0
-50
0
50
100
150
200
6
8
10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS= 18V
Plused
1
Ta=150ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.1
1
10
100
Drain Current : ID [A]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
7/11
Data Sheet
S2305
lElectrical characteristic curves
Fig.12 Typical Capacitance
vs. Drain - Source Voltage
10000
Fig.13 Coss Stored Energy
10
Ta=25ºC
9
8
7
6
5
4
3
2
1
0
1000
100
10
Ciss
Coss
Crss
Ta=25ºC
f = 1MHz
VGS = 0V
1
0
200
400
600
800
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.15 Dynamic Input Characteristics
Fig.14 Switching Characteristics
10000
20
Ta = 25ºC
Ta = 25ºC
VDD= 400V
ID= 3A
VDD = 400V
VGS = 18V
RG= 0W
tf
Pulsed
1000
100
10
15
Pulsed
td(off)
10
5
td(on)
tr
1
0
0.1
1
10
100
0
5
10
15
20
25
30
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
8/11
Data Sheet
S2305
lElectrical characteristic curves
Fig.16 Typical Switching Loss
vs. Drain - Source Voltage
Fig.17 Typical Switching Loss
vs. Drain Current
100
300
Ta = 25ºC
ID= 3A
VGS = 18V/0V
RG= 0W
Ta = 25ºC
VDD= 600V
VGS = 18V/0V
RG= 0W
90
250
200
150
100
50
80
L=500H
70
60
50
40
30
20
10
0
L=500H
Eon
Eon
Eoff
Eoff
0
0
200
400
600
800
1000
0
2
4
6
8
10
12
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.18 Typical Switching Loss
vs. External Gate Resistance
120
110
100
90
80
70
60
50
40
30
20
10
0
Ta = 25ºC
VDD= 600V
ID= 3A
VGS = 18V/0V
L=500H
Eon
Eoff
0
5
10
15
20
25
30
External Gate Resistance : RG [W]
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
9/11
Data Sheet
S2305
lElectrical characteristic curves
Fig.19 Inverse Diode Forward Current
Fig.20 Reverse Recovery Time
vs.Inverse Diode Forward Current
vs. Source - Drain Voltage
10
1000
100
10
Ta=25ºC
VGS=0V
Pulsed
di / dt = 110A / s
VR = 400V
VGS = 0V
Pulsed
1
Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0
1
2
3
4
5
6
7
8
1
10
Inverse Diode Forward Current : IS [A]
Source - Drain Voltage : VSD [V]
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
10/11
Data Sheet
S2305
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Switching Energy Measurement Circuit
Eon = ID×VDS
Eoff = ID×VDS
Vsurge
Same type
device as
D.U.T.
Irr
VDS
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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© 2016 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.C
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
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