RTL020P02FRA [ROHM]
车载 MOSFET与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。;
| 型号： | RTL020P02FRA |
| 厂家： | 
ROHM |
| 描述： | 车载 MOSFET与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。 |
| 文件： | 总4页 (文件大小：998K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RTL020P02FRA
Transistors
AEC-Q101 Qualified
2.5V Drive Pch MOSFET
RTL020P02FRA
zDimensions (Unit : mm)
zStructure
Silicon P-channel
MOSFET
TUMT6
zFeatures
1) Low on-resistance. (180mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
Abbreviated symbol : WU
zApplications
DC-DC converter
zPackaging specifications
zEquivalent circuit
Package
Code
Taping
(6)
(5)
(4)
Type
TR
Quantity (pcs)
3000
∗2
RTL020P02FRA
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
−20
12
Unit
V
V
Continuous
2
A
Drain current
Pulsed
∗1
IDP
8
A
Source current
(Body diode)
Continuous
IS
−0.8
−8
1
A
∗1
∗2
Pulsed
ISP
A
Total power dissipation
Channel temperature
PD
W
°C
°C
Tch
Tstg
150
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
−55 to +150
zThermal resistance
Parameter
Symbol
Rth(ch-a) ∗
Limits
125
Unit
Channel to ambient
∗ Mounted on a ceramic board.
°C / W
20190527-Rev.C 1/4
RTL020P02FRA
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 12V, VDS=0V
ID= −1mA, VGS=0V
µA VDS= −20V, VGS=0V
VDS= −10V, ID= −1mA
mΩ ID= −2A, VGS= −4.5V
mΩ ID= −2A, VGS= −4V
mΩ ID= −1A, VGS= −2.5V
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS −20
Zero gate voltage drain current
V
IDSS
−
−
−
100
110
180
−
430
80
55
11
13
38
12
4.9
1.2
1.3
−1
−2.0
135
150
250
−
−
−
−
−
−
−
−
−
−
−
Gate threshold voltage
VGS (th) −0.7
V
−
−
−
∗
Static drain-source on-state
resistance
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1.2
S
VDS= −10V, ID= −1A
VDS= −10V
VGS=0V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
f=1MHz
∗
∗
∗
∗
∗
∗
∗
I
V
V
R
D
= −1A
DD −15V
t
r
GS= −4.5V
Turn-off delay time
Fall time
td (off)
tf
L
=15Ω
=10Ω
R
G
Total gate charge
Gate-source charge
Qg
nC VDD −15V
nC VGS= −4.5V
nC ID= −2A
R
L
=7.5Ω
=10Ω
Qgs
Qgd
−
−
RG
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
V
Forward voltage
V
SD
−
−
−1.2
IS= −0.8A, VGS=0V
20190527-Rev.C 2/4
RTL020P02FRA
Transistors
zElectrical characteristic curves
10
1000
100
10
1000
100
10
VDS= −10V
Pulsed
VGS
Pulsed
= −4.5V
Ta=25°C
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS= −2.5V
VGS= −4.0V
VGS= −4.5V
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.1
1
10
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.1 Typical Transfer Characteristics
1000
1000
100
10
10
VGS
Pulsed
=
−
4V
VGS
Pulsed
=
−
2.5V
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
1
Ta= −25°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
10
0.1
0.01
0.0
1
10
0.1
1
10
0.5
1.0
1.5
2.0
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
8
10000
10000
Ta=25°C
VDD= −15V
ID= −2A
Ta=25°C
f=1MHz
VGS=0V
Ta=25°C
VDD= −15V
VGS= −4.5A
RG=10Ω
7
6
5
4
3
2
1
0
RG=10Ω
Pulsed
1000
100
10
Pulsed
1000
100
10
t
f
Ciss
t
d (off)
t
d (on)
Coss
Crss
t
r
1
0.01
0.1
1
10
100
0.01
0.1
1
10
0
1
2
3
4
5
6
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
20190527-Rev.C 3/4
RTL020P02FRA
Transistors
zMeasurement circuits
Pulse Width
V
GS
ID
V
V
GS
10%
50%
V
DS
50%
90%
R
L
10%
90%
10%
90%
D.U.T.
RG
V
DD
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.11 Switching Waveforms
Fig.10 Switching Time Measurement Circuit
V
G
V
GS
ID
V
DS
Qg
RL
V
GS
I
G(Const)
D.U.T.
Qgs
Qgd
RG
V
DD
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
20190527-Rev.C 4/4
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