RSX051VA-30TR [ROHM]
暂无描述;型号: | RSX051VA-30TR |
厂家: | ROHM |
描述: | 暂无描述 肖特基二极管 |
文件: | 总4页 (文件大小:993K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Schottky barrier Diode
RSX051VA-30
Applications
Dimensions(Unit : mm)
Land size figure (Unit : mm)
General rectification.
1.1
0.17±0.1
ꢀꢀ 0.05
1.3±0.05
Features
1) Small mold type. (TUMD2)
2) Low VF
3) High reliability.
TUMD2
Construction
Silicon epitaxial planar
Structure
0.8±0.05
0.6±0.2
ꢀꢀꢀ 0.1
ROHM : TUMD2
dot (year week factory) + day
Taping specifications(Unit : mm)
φ1.55±0.1
ꢀꢀꢀꢀꢀ 0
0.25±0.05
2.0±0.05
4.0±0.1
4.0±0.1
φ1.0±0.2
1.43±0.05
ꢀꢀꢀꢀꢀ0
0.9±0.08
Absolute maximum ratings(Ta=25°C)
Parameter
Limits
Symbol
VRM
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
30
VR
30
V
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
500
Io
IFSM
mA
A
5
150
Tj
°C
°C
Storage temperature
40 to 150
Tstg
Electrical characteristics(Ta=25°C)
Parameter
Symbol
Min.
Typ.
0.35
40
Max.
0.39
200
Unit
V
Conditions
VF
IR
Forward voltage
Reverse current
-
-
IF=500mA
VR=30V
μA
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.C
Data Sheet
RSX051VA-30
1000
100
10
1000
1000000
100000
10000
1000
100
Ta=150℃
f=1MHz
Ta=150℃
Ta=125℃
Ta=125℃
Ta=75℃
100
Ta=75℃
Ta=25℃
Ta=25℃
Ta=-25℃
10
1
10
Ta=-25℃
1
0.1
1
0
5
10
15
20
25
30
0
10
20
30
0
100
200
300
400
500
600
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
380
370
360
350
340
330
300
250
200
150
100
50
200
190
180
170
160
150
140
130
120
110
100
Ta=25℃
IF=0.5A
n=30pcs
Ta=25℃
VR=30V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:36.59uA
AVE:159.7pF
AVE:354.8mV
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
25
20
15
10
5
30
25
20
15
10
5
30
25
20
15
10
5
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1cyc
Ifsm
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:15.6A
AVE:10.4ns
0
0
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
0.5
0.4
0.3
0.2
0.1
0
30
25
20
15
10
5
1000
100
10
IM=10mA
IF=0.2A
Ifsm
t
time
1ms
Rth(j-a)
Rth(j-c)
300us
D=1/2
Sin(θ=180)
DC
0
0
0.2
0.4 0.6
AVERAGE RECTIFIED
0.8
1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.001
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.C
Data Sheet
RSX051VA-30
1.5
1
1.5
1
3
Io
0A
0V
Io
0A
0V
VR
VR
t
t
D=t/T
VR=15V
Tj=150℃
D=t/T
VR=15V
Tj=150℃
2
DC
T
DC
T
D=1/2
Sin(θ=180)
D=1/2
D=1/2
0.5
0
0.5
0
1
DC
Sin(θ=180)
Sin(θ=180)
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.C
Notice
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
相关型号:
RSX051VAM30TR
Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, ROHS COMPLIANT, TUMD2M, 2 PIN
ROHM
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