RGTV80TS65D [ROHM]
RGTV80TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。RGTV系列的短路耐量为2μs (Min),同时还具有开关损耗小,开关速度快的特点。;型号: | RGTV80TS65D |
厂家: | ROHM |
描述: | RGTV80TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。RGTV系列的短路耐量为2μs (Min),同时还具有开关损耗小,开关速度快的特点。 开关 双极性晶体管 功率因数校正 电视 |
文件: | 总12页 (文件大小:1023K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGTV80TS65D
650V 40A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
650V
40A
1.5V
234W
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching & Low Switching Loss
3) Short Circuit Withstand Time 2μs
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
(1)
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
*1 Built in FRD
lApplication
lPackaging Specifications
Solar Inverter
Packaging
Tube
UPS
Welding
IH
Reel Size (mm)
-
Tape Width (mm)
Type
-
450
Basic Ordering Unit (pcs)
PFC
Packing Code
Marking
C11
RGTV80TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
±30
Gate - Emitter Voltage
V
TC = 25°C
78
A
Collector Current
TC = 100°C
IC
40
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
160
A
ICP
TC = 25°C
IF
IF
73
A
TC = 100°C
40
A
*1
160
A
IFP
TC = 25°C
PD
PD
Tj
234
W
W
°C
°C
TC = 100°C
117
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
Tstg
*1 Pulse width limited by Tjmax.
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
1/11
Datasheet
RGTV80TS65D
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.64
0.93
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
ICES VCE = 650V, VGE = 0V
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 27.5mA
-
-
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
Gate - Emitter Leakage
Current
-
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 40A, VGE = 15V,
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
2/11
Datasheet
RGTV80TS65D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
2370
94
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V,
Coes VGE = 0V,
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
38
VCE = 400V,
81
Qge IC = 40A,
Qgc VGE = 15V
td(on)
17
nC
31
39
IC = 40A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
17
ns
mJ
ns
Turn - off Delay Time
Fall Time
113
45
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
1.02
0.71
38
IC = 40A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
19
td(off)
tf
Turn - off Delay Time
Fall Time
130
86
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
1.07
1.01
mJ
-
IC = 160A, VCC = 520V,
VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175℃
Reverse Bias Safe Operating
Area
RBSOA
FULL SQUARE
VCC ≦ 360V,
tsc
VGE = 15V,
Short Circuit Withstand Time
2
-
-
μs
Tj = 25℃
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
3/11
Datasheet
RGTV80TS65D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
IF = 40A,
Unit
V
Min.
Max.
VF
Tj = 25°C
Diode Forward Voltage
-
-
1.45
1.55
1.9
-
Tj = 175°C
Diode Reverse Recovery
Time
trr
-
-
-
-
-
-
-
-
101
9.6
-
-
-
-
-
-
-
-
ns
A
Diode Peak Reverse
Recovery Current
IF = 40A,
Irr
VCC = 400V,
diF/dt = 200A/μs,
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
0.53
25.1
184
μC
μJ
ns
A
Diode Reverse Recovery
Energy
Diode Reverse Recovery
Time
Diode Peak Reverse
Recovery Current
IF = 40A,
Irr
13.1
1.42
102.5
VCC = 400V,
diF/dt = 200A/μs,
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
μC
μJ
Diode Reverse Recovery
Energy
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
4/11
Datasheet
RGTV80TS65D
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
250
Fig.2 Collector Current
vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
200
150
100
50
Tj ≤ 175ºC
VGE ≥ 15V
0
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
1000
Fig.4 Reverse Bias Safe Operating Area
180
160
140
120
100
80
10μs
100
100μs
10
1
60
40
0.1
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
20
0
0.01
0
200
400
600
800
1
10
100
1000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
5/11
Datasheet
RGTV80TS65D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
160
160
Tj = 25ºC
Tj = 175ºC
140
140
VGE = 12V
VGE = 20V
VGE = 20V
120
120
VGE = 15V
100
VGE = 15V
100
VGE = 10V
VGE = 12V
80
60
80
VGE = 10V
60
40
20
0
40
20
0
VGE = 8V
VGE = 8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
Fig.7 Typical Transfer Characteristics
80
4
VGE = 15V
VCE = 10V
70
3
60
50
40
30
20
IC = 80A
IC = 40A
2
IC = 20A
1
Tj = 175ºC
10
Tj = 25ºC
0
0
25 50 75 100 125 150 175
0
2
4
6
8
10 12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [°C ]
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
6/11
Datasheet
RGTV80TS65D
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
20
Tj = 175ºC
Tj = 25ºC
IC = 80A
IC = 80A
15
15
IC = 40A
IC = 40A
IC = 20A
IC = 20A
10
10
5
0
5
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
td(off)
100
10
1
100
tf
tf
td(on)
td(on)
10
1
tr
tr
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
IC = 40A, Tj = 175ºC
Inductive load
0
20
40
60
80
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : Rg [Ω]
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
7/11
Datasheet
RGTV80TS65D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typocal Switching Energy Losses
vs. Gate Resistance
10
10
Eon
1
1
Eoff
Eoff
0.1
0.1
0.01
Eon
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, IC = 40A,
VGE = 15V, Tj = 175ºC
Inductive load
0.01
0
20
40
60
80
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector to Emitter Voltage
Fig.16 Typical Gate Charge
15
10000
1000
100
10
Cies
10
5
Coes
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
VCC = 400V
IC = 40A
Tj = 25ºC
1
0
0.01
0.1
1
10
100
0
20
40
60
80
100
Collector To Emitter Voltage : VCE [V]
Gate Charge : Qg [nC]
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
8/11
Datasheet
RGTV80TS65D
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
Fig.18 Typical Diode Revese Recovery Time
vs. Forward Current
160
140
120
100
400
VCC = 400V
diF/dt = 200A/μs
Inductive load
300
80
200
Tj = 175ºC
Tj = 25ºC
60
40
Tj = 175ºC
100
20
0
Tj = 25ºC
0
0
0.5
1
1.5
2
2.5
3
0
10 20 30 40 50 60 70 80
Forward Current : IF [A]
Forward Voltage : VF [V]
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
Fig.20 Typical Diode Rrverse Recovery
Charge vs. Forward Current
20
2.5
VCC = 400V
diF/dt = 200A/μs
Inductive load
2
15
Tj = 175ºC
1.5
10
Tj = 175ºC
1
Tj = 25ºC
5
0.5
VCC = 400V
diF/dt = 200A/μs
Inductive load
Tj = 25ºC
0
0
0
10 20 30 40 50 60 70 80
Forward Current : IF [A]
0
10 20 30 40 50 60 70 80
Forward Current : IF [A]
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
9/11
Datasheet
RGTV80TS65D
lElectrical Characteristic Curves
Fig.21 Typical IGBT Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
t1
0.01
Single Pulse
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.01
0.02
0.05
C1
C2
C3
481.8u 1.002m 1.847m 93.12m 76.92m 230.0m
R1 R2 R3
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
Fig.22 Typical Diode Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
Single Pulse
t1
0.01
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
0.05
C1
C2
C3
330.3u 719.9u 1.900m 149.6m 114.2m 316.2m
R1 R2 R3
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.12 - Rev.A
10/11
Datasheet
RGTV80TS65D
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
10%
IC
Fig.23 Inductive Load Circuit
tr
tf
td(on)
td(off)
trr , Qrr
ton
toff
IF
diF/dt
VCE
10%
Irr
VCE(sat)
Eon
Eoff
Fig.25 Diode Reverse Recovery Waveform
Fig.24 Inductive Load Waveform
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2019.01 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
R1107
A
相关型号:
RGTVX2TS65
RGTVX2TS65是保证了2μs的SCSOA的IGBT,非常适用于PFC、太阳能逆变器、UPS、焊接、IH等应用。RGTV/RGW系列是消除了IGBT低导通损耗和高速开关特性之间的矛盾关系的高效率系列产品。而且,还实现了平稳的软开关,可减少开关时的电压过冲,从而有助于显着降低设计负担。
ROHM
RGTVX2TS65D
RGTVX2TS65D是保证了2μs的SCSOA的IGBT,非常适用于PFC、太阳能逆变器、UPS、焊接、IH等应用。RGTV/RGW系列是消除了IGBT低导通损耗和高速开关特性之间的矛盾关系的高效率系列产品。而且,还实现了平稳的软开关,可减少开关时的电压过冲,从而有助于显着降低设计负担。
ROHM
RGW00TS65CHR
RGWxx65C系列是650V耐压IGBT,采用SiC肖特基势垒二极管作为续流二极管,实现了更低损耗。本产品还符合汽车电子产品可靠性标准“AEC-Q101”,即使在xEV车载充电器、DC-DC转换器、太阳能发电用的功率调节器、不间断电源装置(UPS)等严苛环境下也可放心使用。
ROHM
RGW00TS65DHR
RGW00TS65DHR是以高速开关为特点的IGBT。适合车载/非车载充电器、DC/DC转换器、PFC、工业用变频电机等应用。是符合AEC-Q101标准的高可靠性产品。RGTV/RGW系列是消除了IGBT的低导通损耗及高速开关特性两者此消彼长关系的高效系列。并且实现了顺畅的软开关,降低了开关时的电压过冲,有助于大幅降低设计负担。
ROHM
©2020 ICPDF网 联系我们和版权申明