RGTH60TS65D [ROHM]
罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。;
| 型号： | RGTH60TS65D |
| 厂家： | 
ROHM |
| 描述： | 罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。 栅 双极性晶体管 栅极 |
| 文件： | 总11页 (文件大小：4816K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGTH60TS65DGC13
Datasheet
650V 30A Field Stop Trench IGBT
lOutline
TO-247GE
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
30A
1.6V
194W
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Low Switching Loss & Soft Switching
(1)
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Tube
lApplications
PFC
Reel Size (mm)
-
-
UPS
Tape Width (mm)
Type
Power Conditioner
IH
Basic Ordering Unit (pcs)
600
C13
Packing code
RGTH60TS65D
Marking
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
58
A
Collector Current
TC = 100°C
IC
30
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
120
A
ICP
TC = 25°C
IF
IF
40
20
A
TC = 100°C
A
*1
120
A
IFP
TC = 25°C
PD
PD
Tj
194
W
W
°C
°C
TC = 100°C
97
Operating Junction Temperature
-40 to +175
-55 to +175
Tstg
Storage Temperature
*1 Pulse width limited by Tjmax.
2019.08 - Rev.A
1/11
Datasheet
RGTH60TS65DGC13
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.77
2.00
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
°C/W
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
200
6.5
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 21.0mA
4.5
5.5
IC = 30A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.6
2.1
2.1
-
V
2019.08 - Rev.A
2/11
Datasheet
RGTH60TS65DGC13
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
1670
66
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies
Coes
Cres
Qg
VCE = 30V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
f = 1MHz
27
VCE = 300V
58
Qge
Qgc
td(on)
tr
IC = 30A
15
nC
ns
VGE = 15V
20
IC = 30A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 25°C
27
40
td(off)
tf
td(on)
tr
td(off)
tf
Turn - off Delay Time
Fall Time
105
47
Inductive Load
IC = 30A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
Turn - on Delay Time
Rise Time
27
40
ns
Turn - off Delay Time
Fall Time
120
59
Inductive Load
IC = 120A, VCC = 520V
VP = 650V, VGE = 15V
RG = 60Ω, Tj = 175°C
Reverse Bias Safe Operating Area
RBSOA
FULL SQUARE
-
2019.08 - Rev.A
3/11
Datasheet
RGTH60TS65DGC13
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
IF = 20A
VF
Tj = 25°C
Diode Forward Voltage
Diode Reverse Recovery Time
-
-
1.35
1.15
1.8
-
Tj = 175°C
trr
-
-
-
-
-
-
58
-
-
-
-
-
-
ns
A
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
Diode Peak Reverse Recovery
Current
Irr
6.5
Diode Reverse Recovery
Charge
Qrr
0.21
236
10.7
1.36
μC
ns
A
trr
Diode Reverse Recovery Time
IF = 20A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
μC
2019.08 - Rev.A
4/11
Datasheet
RGTH60TS65DGC13
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
220
200
180
160
140
120
100
80
70
60
50
40
30
20
60
40
ꢀ
Tj≦175ºC
GE≧15V
10
20
V
0
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
1000
160
140
120
100
80
10µs
100
10
100µs
1
60
40
0.1
0.01
TC= 25ºC
Single Pulse
Tj≦175ºC
VGE=15V
20
0
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
2019.08 - Rev.A
5/11
Datasheet
RGTH60TS65DGC13
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
120
120
Tj= 25ºC
Tj= 175ºC
VGE= 20V
VGE= 12V
100
80
60
40
20
0
100
80
60
40
20
0
VGE= 15V
VGE= 12V
VGE= 20V
VGE= 15V
VGE= 10V
VGE= 10V
VGE= 8V
VGE= 8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
4
60
VCE= 10V
VGE= 15V
50
40
30
20
10
0
IC= 60A
3
IC= 30A
2
IC= 15A
1
Tj= 175ºC
Tj= 25ºC
10
0
25
50
75
100
125
150
175
0
2
4
6
8
12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
2019.08 - Rev.A
6/11
Datasheet
RGTH60TS65DGC13
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
vs. Gate To Emitter Voltage
20
20
Tj= 175ºC
Tj= 25ºC
15
15
IC= 60A
IC= 60A
IC= 30A
10
10
IC= 30A
IC= 15A
IC= 15A
5
5
0
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
Fig.11 Typical Switching Time
vs. Collector Current
1000
100
10
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
td(off)
tf
td(off)
100
tf
tr
td(on)
tr
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive ｌoad
td(on)
10
0
10
20
30
40
50
60
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
2019.08 - Rev.A
7/11
Datasheet
RGTH60TS65DGC13
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
vs. Collector Current
10
10
Eoff
1
1
Eoff
Eon
Eon
0.1
0.1
0.01
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
Inductive ｌoad
0.01
0
10
20
30
40
50
0
10
20
30
40
50
60
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.16 Typical Gate Charge
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
15
10
5
10000
1000
100
10
Cies
Coes
Cres
10
f=1MHz
VGE=0V
Tj=25ºC
VCC=300V
IC=30A
Tj=25ºC
0
1
0.01
0
10
20
30
40
50
60
0.1
1
100
Collector To Emitter Voltage : VCE[V]
Gate Charge : Qg [nC]
2019.08 - Rev.A
8/11
Datasheet
RGTH60TS65DGC13
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
vs. Forward Voltage
400
120
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
100
80
300
200
100
0
Tj= 175ºC
Tj= 25ºC
60
40
Tj= 175ºC
20
Tj= 25ºC
0
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
3
Forward Voltage : VF[V]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
vs. Forward Current
20
2.5
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
2
15
Tj= 175ºC
1.5
Tj= 175ºC
10
1
5
0.5
VCC=400V
diF/dt=200A/µs
Inductive ｌoad
Tj= 25ºC
10
Tj= 25ºC
0
0
0
20
30
40
50
0
10
20
30
40
50
Forward Current : IF [A]
Forward Current : IF [A]
2019.08 - Rev.A
9/11
Datasheet
RGTH60TS65DGC13
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
PDM
0.1
0.01
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
Single Pulse
0.001
0.01
0.02
0.05
0.0001
0.01
0.1
1
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
PDM
0.1
Single Pulse
0.01
t1
t2
0.05
0.02
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.01
0.0001
0.001
0.01
0.1
1
Pulse Width : t1[s]
2019.08 - Rev.A
10/11
Datasheet
RGTH60TS65DGC13
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
10%
IC
td(on)
Fig.23 Inductive Load Circuit
td(off)
tf
tr
ton
toff
trr , Qrr
IF
VCE
diF/dt
VCE(sat)
Irr
Fig.25 Inductive Load Waveform
Fig.24 Diode Reverce Recovery Waveform
2019.08 - Rev.A
11/11
相关型号：
©2020 ICPDF网 联系我们和版权申明