RGS50TSX2D [ROHM]
RGS50TSX2D适用于通用变频器、UPS、PV变频器和功率调节器等,是短路耐量为10µs的产品。RGS系列实现了低导通损耗(Vce(sat.)),有助于应用的小型、高效化。;型号: | RGS50TSX2D |
厂家: | ROHM |
描述: | RGS50TSX2D适用于通用变频器、UPS、PV变频器和功率调节器等,是短路耐量为10µs的产品。RGS系列实现了低导通损耗(Vce(sat.)),有助于应用的小型、高效化。 调节器 |
文件: | 总13页 (文件大小:1049K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGS50TSX2D
1200V 25A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
1200V
25A
1.7V
395W
(1)(2)(3)
lInner Circuit
(2)
(3)
lFeatures
(1) Gate
(2) Collector
(3) Emitter
1) Low Collector - Emitter Saturation Voltage
2) Short Circuit Withstand Time 10μs
*1
(1)
*1 Built in FRD
3) Built in Very Fast & Soft Recovery FRD
4) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Tube
lApplication
Reel Size (mm)
-
General Inverter
Tape Width (mm)
Type
-
450
UPS
Basic Ordering Unit (pcs)
PV Inverter
Power Conditioner
Packing Code
Marking
C11
RGS50TSX2D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
1200
Gate - Emitter Voltage
±30
V
TC = 25°C
50
A
Collector Current
TC = 100°C
IC
25
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
75
50
A
ICP
TC = 25°C
IF
IF
A
TC = 100°C
25
A
*1
75
A
IFP
TC = 25°C
PD
PD
Tj
395
W
W
°C
°C
TC = 100°C
197
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
Tstg
*1 Pulse width limited by Tjmax.
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
1/11
Datasheet
RGS50TSX2D
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.38
0.80
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
1200
-
VCE = 1200V, VGE= 0V
ICES Tj = 25℃
Collector Cut - off Current
-
-
-
10
-
μA
Tj = 175℃*2
2
mA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 3.8mA
-
-
±500
7.0
nA
V
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 25A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.70
2.20
2.10
-
V
V
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
2/11
Datasheet
RGS50TSX2D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
2095
166
12
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V
Coes VGE = 0V
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
VCE = 500V
67
Qge IC = 25A
Qgc VGE = 15V
td(on)
19
nC
25
37
IC = 25A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
16
ns
mJ
ns
Turn - off Delay Time
Fall Time
140
205
1.40
1.65
36
Eon
Eoff
td(on)
tr
Turn-on Switching Loss
Turn-off Switching Loss
Turn - on Delay Time
Rise Time
IC = 25A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
17
td(off)
tf
Turn - off Delay Time
Fall Time
170
280
1.50
2.20
Eon
Eoff
Turn-on Switching Loss
Turn-off Switching Loss
mJ
-
IC = 75A, VCC = 1050V
Vp = 1200V, VGE = 15V
RG = 50Ω, Tj = 175°C
Reverse Bias
Safe Operating Area
RBSOA
tsc
FULL SQUARE
V
CC ≤ 600V
VGE = 15V, Tj = 25°C
Short Circuit Withstand Time
Short Circuit Withstand Time
10
8
-
-
-
-
μs
μs
V
CC ≤ 600V
VGE = 15V, Tj = 150°C
*2
tsc
*2 Design assurance without measurement
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
3/11
Datasheet
RGS50TSX2D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
IF = 25A
Unit
V
Min.
Max.
VF
Tj = 25°C
Diode Forward Voltage
-
-
1.65
1.85
2.10
-
Tj = 175°C
Diode Reverse Recovery
Time
trr
-
-
-
-
-
-
-
-
182
15.7
1.7
-
-
-
-
-
-
-
-
ns
A
IF = 25A
Diode Peak Reverse
Recovery Current
Irr
VCC = 600V
diF/dt = 500A/μs
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
μC
μJ
ns
A
Diode Reverse Recovery
Energy
422
248
17.8
2.7
Diode Reverse Recovery
Time
IF = 25A
Diode Peak Reverse
Recovery Current
Irr
VCC = 600V
diF/dt = 500A/μs
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
μC
μJ
Diode Reverse Recovery
Energy
787
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
4/11
Datasheet
RGS50TSX2D
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
400
Fig.2 Collector Current
vs. Case Temperature
60
50
40
30
20
10
0
300
200
100
0
Tj ≤ 175ºC
VGE ≥ 15V
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
1000
Fig.4 Reverse Bias Safe Operating Area
100
10μs
100
75
50
25
100μs
10
1
0.1
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
0
0.01
0
300 600 900 1200 1500
1
10
100
1000 10000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
5/11
Datasheet
RGS50TSX2D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
75
Fig.6 Typical Output Characteristics
75
Tj = 25ºC
VGE = 20V
VGE = 15V
VGE = 12V
Tj = 175ºC
VGE = 20V
VGE = 15V
50
25
0
50
VGE = 12V
VGE = 10V
VGE = 10V
25
0
VGE = 8V
VGE = 8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector To Emitter Saturation
Fig.7 Typical Transfer Characteristics
Voltage vs. Junction Temperature
4
75
VGE = 15V
IC = 50A
IC = 25A
VCE = 10V
3
2
1
0
50
25
IC = 10A
Tj = 175ºC
Tj = 25ºC
0
0
2
4
6
8
10 12 14
25 50 75 100 125 150 175
Junction Temperature : Tj [°C ]
Gate To Emitter Voltage : VGE [V]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
6/11
Datasheet
RGS50TSX2D
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
10
10
Tj = 175ºC
Tj = 25ºC
8
8
6
4
2
0
IC = 50A
IC = 25A
IC = 50A
IC = 25A
6
IC = 10A
IC = 10A
4
2
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
tf
tf
td(off)
td(off)
100
100
10
1
td(on)
td(on)
tr
10
tr
VCC = 600V, IC = 25A,
VGE = 15V, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
1
0
10
20
30
40
50
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
7/11
Datasheet
RGS50TSX2D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
vs. Collector Current
100
100
10
1
10
Eon
Eon
Eoff
Eoff
1
VCC = 600V, VGE = 15V,
IC = 25A, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.1
0.1
0
10
20
30
40
50
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
10000
1000
100
10
VCC = 300V
Cies
10
5
VCC = 500V
Coes
f = 1MHz
VGE = 0V
Tj = 25ºC
IC = 25A
Tj = 25ºC
Cres
1
0
0.01
0.1
1
10
100
0
15
30
45
60
75
Collector To Emitter Voltage : VCE [V]
Gate Charge : QG [nQ]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
8/11
Datasheet
RGS50TSX2D
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
Fig.18 Typical Diode Reverce Recovery Time
vs. Forward Voltage
75
vs. Forward Current
400
300
50
25
Tj = 175ºC
200
Tj = 25ºC
100
VCC = 600V
diF/dt = 500A/μs
Inductive load
Tj = 175ºC
Tj = 25ºC
0
0
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
Forward Voltage : VF [V]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
25
Fig.20 Typical Diode Reverse Recovery
Energy Losses vs. Forward Current
2
VCC = 600V
Tj = 175℃
Inductive load
20
RG = 10Ω
1.5
Tj = 175ºC
15
1
RG = 30Ω
10
5
Tj = 25ºC
0.5
RG = 50Ω
VCC = 600V
diF/dt = 500A/μs
Inductive load
0
0
0
10
20
30
40
50
0
10
20
30
40
50
Forward Current : IF [A]
Forward Current : IF [A]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
9/11
Datasheet
RGS50TSX2D
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
Single Pulse
t1
0.01
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
0.05
C1
C2
C3
R1
1.184m 2.063m 11.68m 63.87m 70.00m 246.1m
R2
R3
0.001
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
Fig.22 Diode Transient Thermal Impedance
1
D = 0.5
0.1
0.2
0.1
0.01
Single Pulse
0.01
PDM
0.02
t1
0.05
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
C1
C2
C3
R1
165.5u 1.790m 12.54m 82.30m 387.5m 330.2m
R2
R3
0.001
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
10/11
Datasheet
RGS50TSX2D
●Inductive Load Switching Circuit and Waveform
D.U.T.
D.U.T.
Gate Drive Time
90%
VGE
VG
10%
Fig.23 Inductive Load Circuit
90%
10%
IC
tf
td(off)
td(on)
tr
trr , Qrr
IF
ton
toff
VCE
diF/dt
10%
VCE(sat)
Irr
Eon
Eoff
Fig.24 Diode Reverce Recovery Waveform
Fig.25 Inductive Load Waveform
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.09 - Rev.C
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2015 ROHM Co., Ltd. All rights reserved.
R1107
A
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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