RGS00TS65HR [ROHM]
RGS00TS65HR是一款具有低导通损耗特性的车载IGBT。 适用于注重导通损耗的电动压缩机的逆变电路和PTC加热器的开关电路。是符合AEC-Q101标准的高可靠性产品。;型号: | RGS00TS65HR |
厂家: | ROHM |
描述: | RGS00TS65HR是一款具有低导通损耗特性的车载IGBT。 适用于注重导通损耗的电动压缩机的逆变电路和PTC加热器的开关电路。是符合AEC-Q101标准的高可靠性产品。 开关 双极性晶体管 |
文件: | 总10页 (文件大小:293K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGS00TS65HR
650V 50A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.65V
326W
(1)(2)(3)
lInner Circuit
(2)
(3)
lFeatures
(1) Gate
(2) Collector
(3) Emitter
1) Low Collector - Emitter Saturation Voltage
2) Short Circuit Withstand Time 8μs
3) Qualified to AEC-Q101
(1)
4) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Tube
lApplication
Reel Size (mm)
-
Heater for Automotive
Tape Width (mm)
Type
-
450
Basic Ordering Unit (pcs)
Packing Code
Marking
C11
RGS00TS65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
650
±30
88
Unit
V
Gate - Emitter Voltage
V
TC = 25°C
A
Collector Current
TC = 100°C
IC
50
A
*1
Pulsed Collector Current
Power Dissipation
150
326
163
A
ICP
TC = 25°C
PD
PD
Tj
W
W
TC = 100°C
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
°C
°C
Tstg
*1 Pulse width limited by Tjmax.
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Datasheet
RGS00TS65HR
lThermal Resistance
Values
Typ.
-
Parameter
Thermal Resistance IGBT Junction - Case
Symbol
Rθ(j-c)
Unit
Min.
-
Max.
0.46
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
VCE = 650V, VGE = 0V,
ICES Tj = 25℃
Collector Cut - off Current
-
-
-
-
10
5
μA
Tj = 175℃*2
mA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
-
-
±200
7.0
nA
V
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 2.5mA
5.0
6.0
IC = 50A, VGE = 15V,
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.65
2.15
2.10
-
V
V
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Datasheet
RGS00TS65HR
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
1568
134
23
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V,
Coes VGE = 0V,
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
VCE = 300V,
58
Qge IC = 50A,
Qgc VGE = 15V
td(on)
15
nC
24
36
IC = 50A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
21
ns
mJ
ns
Turn - off Delay Time
Fall Time
115
91
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
1.46
1.29
37
IC = 50A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
33
td(off)
tf
Turn - off Delay Time
Fall Time
145
147
1.97
1.85
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
mJ
-
IC = 150A, VCC = 520V,
VP = 650V, VGE = 15V,
RG = 50Ω, Tj = 175°C
Reverse Bias
Safe Operating Area
RBSOA
tsc
FULL SQUARE
V
CC ≤ 360V,
VGE = 15V, Tj = 25°C
Short Circuit Withstand Time
Short Circuit Withstand Time
8
6
-
-
-
-
μs
μs
V
CC ≤ 360V,
VGE = 15V, Tj = 150°C
*2
tsc
*2 Design assurance without measurement
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Datasheet
RGS00TS65HR
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
350
Fig.2 Collector Current
vs. Case Temperature
100
80
60
40
20
0
300
250
200
150
100
50
Tj ≤ 175ºC
VGE ≥ 15V
0
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
160
140
120
100
80
1000
10μs
100
100μs
10
1
60
40
0.1
Tj ≤ 175ºC
VGE = 15V
20
TC = 25ºC
Single Pulse
0
0.01
0
200
400
600
800
1
10
100
1000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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Datasheet
RGS00TS65HR
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
150
150
Tj = 25ºC
Tj = 175ºC
VGE = 20V
VGE = 12V
VGE = 20V
120
120
90
60
30
0
VGE = 15V
VGE = 15V
90
VGE = 12V
VGE = 10V
60
VGE = 10V
30
VGE = 8V
VGE = 8V
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector To Emitter Saturation
Fig.7 Typical Transfer Characteristics
80
Voltage vs. Junction Temperature
4
IC = 100A
VGE = 15V
VCE = 10V
70
3
2
1
0
60
50
40
30
20
IC = 50A
IC = 25A
Tj = 175ºC
Tj = 25ºC
10
0
0
2
4
6
8
10 12 14
25 50 75 100 125 150 175
Junction Temperature : Tj [°C ]
Gate To Emitter Voltage : VGE [V]
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Datasheet
RGS00TS65HR
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
20
20
Tj = 175ºC
Tj = 25ºC
15
15
10
5
IC = 100A
IC = 100A
IC = 50A
IC = 25A
IC = 50A
10
IC = 25A
5
0
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
tf
tf
100
100
10
1
td(off)
td(on)
td(on)
tr
10
tr
VCC = 400V, IC = 50A,
VGE = 15V, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
1
0 10 20 30 40 50 60 70 80
Collecter Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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Datasheet
RGS00TS65HR
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
Eon
Eoff
Eoff
1
1
Eon
0.1
0.1
0.01
VCC = 400V, IC = 50A,
VGE = 15V, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.01
0 10 20 30 40 50 60 70 80
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
Fig.16 Typical Gate Charge
15
VCE = 200V
Cies
VCE = 300V
1000
10
Coes
VCE = 400V
100
5
0
10
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
IC = 50A
Tj = 25ºC
1
0.01
0.1
1
10
100
0
10 20 30 40 50 60
Gate Charge : Qg [nQ]
Collector To Emitter Voltage : VCE [V]
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Datasheet
RGS00TS65HR
lElectrical Characteristic Curves
Fig.17 IGBT Transient Thermal Impedance
10
1
D = 0.5
0.2
0.1
PDM
0.1
t1
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
Single Pulse
0.01
C1
C2
C3
R1
4.727m 49.61m 75.08m 254.6m 191.9m 13.50m
R2
R3
0.02
0.05
0.01
0.0001
0.001
0.01
0.1
1
Pulse Width : t1 [s]
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Datasheet
RGS00TS65HR
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
10%
VGE
Fi
VG
90%
10%
Fig.18 Inductive Load Circuit
tf
IC
td(off)
td(on)
tr
ton
toff
VCE
10%
VCE(sat)
Eon
Eoff
Fig.19 Inductive Load Waveform
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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