RF301B2STL [ROHM]
Fast Recovery Diode; 快恢复二极管
| 型号： | RF301B2STL |
| 厂家： | 
ROHM |
| 描述： | Fast Recovery Diode |
| 文件： | 总4页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Fast Recovery Diode
RF301B2S
Land size figure(Unit : mm)
Applications
Dimentions(Unit : mm)
6.0
General rectification
ꢀꢀꢀ
ꢀꢀꢀ
Features
1.6
1.6
1)Power mold type(CPD)
2)Ultra Low VF
3)Very fast recovery
4)Low switching loss
CPD
2.3 2.3
Construction
Structure
Silicon epitaxial planar
(2)
ROHM : CPD
JEITA : SC-63
Manufacture Date
(3)
(1)
Taping specifications(Unit : mm)
Absolute maximum ratings(Ta=25C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
200
200
V
Average rectified forward current(*1)
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
3
40
Io
A
IFSM
Tj
A
150
°C
°C
Storage temperature
55 to 150
Tstg
(*1)Bussiness frequencies, Rating of R-load, Tc=128C MAX.
Electrical characteristics(Ta=25C)
Parameter
Conditions
Symbol
VF
Min.
Typ.
0.87
10nA
14
Max.
0.93
10
Unit
V
Forward voltage
Reverse current
-
-
-
-
IF=3A
VR=200V
IR
μA
trr
25
ns
Reverse recovery time
Thermal impedance
IF=0.5A,IR=1A,Irr=0.25*IR
JUNCTION TO CASE
-
6
jc
C/W
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2011.05 - Rev.D
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1/3
Data Sheet
RF301B2S
Electrical characteristics curves
10
10000
1000
100
10
100
10
1
Ta=150C
Ta=125C
f=1MHz
Ta=150C
1
Ta=125C
Ta=75C
Ta=75C
0.1
Ta=25C
Ta=25C
Ta=-25C
Ta=-25C
1
0.01
0.1
0
50
100
150
200
0.001
0
10
20
30
0
100 200 300 400 500 600 700 800 900 1000
：
REVERSE VOLTAGE VR(V)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
VR-IR CHARACTERISTICS
890
100
90
80
70
60
50
40
30
20
10
0
150
140
130
120
110
100
90
Ta=25C
VR=200V
Ta=25C
IF=3A
Ta=25C
f=1MHz
VR=0V
880
870
860
850
840
n=30pcs
n=30pcs
n=10pcs
AVE:99.4pF
80
AVE:859.4mV
AVE:4.60nA
70
60
50
VF DISPERSION MAP
Ct DISPERSION MAP
I
R DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25C
IF=0.5A
Ifsm
1cyc
Ifsm
IR=1A
8.3ms 8.3ms
1cyc
8.3ms
Irr=0.25*IR
n=10pcs
AVE:13.7ns
AVE:126.0A
0
1
0
1
10
100
trr DISPERSION MAP
NUMBER OF CYCLES
FSM-CYCLE CHARACTERISTICS
I
FSM DISPERSION MAP
I
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.D
2/3
Data Sheet
RF301B2S
1000
100
10
1
5
4
3
2
1
0
Mounted on epoxy board
Ifsm
Rth(j-a)
Rth(j-c)
D=1/2
t
Sin(=180)
DC
100
IM=100mA
1ms
IF=1.5A
tim
300us
10
1
0.1
0
1
2
3
4
5
10
100
0.001
0.1
10
1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
30
10
No break at 30kV
No break at 30kV
Io
9
8
7
6
5
4
3
2
1
0
0A
Io
0A
0V
25
20
15
10
5
0V
t
VR
VR
t
D=t/T
D=t/T
VR=100V
Tj=150C
VR=100V
Tj=150C
T
T
DC
DC
D=1/2
D=1/2
Sin(=180)
Sin(=180)
0
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
0
25
50
75
100
125
150
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc(C)
AMBIENT TEMPERATURE : Ta(C)
ESD DISPERSION MAP
Derating Curve"(Io-Tc)
Derating Curve"(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.D
3/3
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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