RDD022N50TL [ROHM]
Power Field-Effect Transistor, 2A I(D), 500V, 5.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CPT3, SC-63, 3/2 PIN;
| 型号： | RDD022N50TL |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, 2A I(D), 500V, 5.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CPT3, SC-63, 3/2 PIN 开关 脉冲 晶体管 |
| 文件： | 总15页 (文件大小：791K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RDD022N50
Datasheet
Nch 500V 2A Power MOSFET
Outline
VDSS
500V
5.4
2A
CPT3
(SC-63)
(SOT-428)
RDS(on) (Max.)
ID
(1)
(2)
(3)
PD
51W
Features
Inner circuit
1) Low on-resistance.
(1) Gate
(2) Drain
2) Fast switching speed.
∗1
(3) Source
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
1 BODY DIODE
(1)
(2)
(3)
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Taping
330
Reel size (mm)
Tape width (mm)
Type
16
Application
Basic ordering unit (pcs)
2,500
TL
Switching Power Supply
Taping code
Marking
022N50
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
VDSS
Value
Unit
V
Drain - Source voltage
500
*1
Tc = 25°C
Continuous drain current
Tc = 100°C
A
ID
2
*1
A
ID
1
*2
Pulsed drain current
A
ID,pulse
6
VGSS
Gate - Source voltage
V
30
*3
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
21
mJ
mJ
A
EAS
*4
1.5
EAR
*3
2.0
51
IAR
Power dissipation (Tc = 25°C)
Junction temperature
PD
Tj
W
150
°C
°C
V/ns
Tstg
Range of storage temperature
Reverse diode dv/dt
55 to 150
15
dv/dt *5
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
1/13
Data Sheet
RDD022N50
Absolute maximum ratings
Parameter
Symbol
dv/dt
Conditions
VDS = 400V, ID =2A
Tj = 125°C
Values
Unit
Drain - Source voltage slope
50
V/ns
Thermal resistance
Values
Parameter
Symbol
RthJC
Unit
Min.
Typ.
Max.
2.41
100
Thermal resistance, junction - case
-
-
-
-
-
-
°C/W
°C/W
°C
RthJA
Tsold
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
265
Electrical characteristics(Ta = 25°C)
Values
Typ.
Parameter
Symbol
V(BR)DSS
Conditions
Unit
V
Min.
500
Max.
-
Drain - Source breakdown
voltage
V
GS = 0V, ID = 1mA
-
Drain - Source avalanche
breakdown voltage
V(BR)DS VGS = 0V, ID = 2A
DS = 500V, VGS = 0V
-
580
-
V
V
Zero gate voltage
drain current
IDSS
Tj = 25°C
Tj = 125°C
-
-
0.1
100
1000
100
4.7
A
-
-
-
IGSS
VGS = 30V, VDS = 0V
Gate - Source leakage current
Gate threshold voltage
-
nA
V
VGS (th) VDS = 10V, ID = 1mA
2.5
VGS = 10V, ID = 1A
Static drain - source
on - state resistance
*6
Tj = 25°C
RDS(on)
2.0
4.1
8.8
9.5
5.4
Tj = 125°C
-
-
-
-
RG
Gate input resistance
f = 1MHz, open drain
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
2/13
Data Sheet
RDD022N50
Electrical characteristics(Ta = 25°C)
Values
Typ.
1.3
Parameter
Symbol
Conditions
Unit
Min.
Max.
*6
VDS = 10V, ID = 1A
VGS = 0V
Transconductance
0.6
-
-
-
-
S
gfs
Ciss
Coss
Crss
Input capacitance
-
-
-
168
27
VDS = 25V
Output capacitance
pF
Reverse transfer capacitance
f = 1MHz
3
Effective output capacitance,
energy related
Co(er)
-
-
9.55
14.4
-
-
VGS = 0V
VDS = 0V to 400V
pF
ns
Effective output capacitance,
time related
Co(tr)
*6
V
DD ⋍ 250V, VGS = 10V
Turn - on delay time
Rise time
-
-
-
-
12
17
24
48
-
td(on)
*6
ID = 1A
-
tr
*6
RL = 250
RG = 10
Turn - off delay time
Fall time
48
96
td(off)
*6
tf
Gate Charge characteristics(Ta = 25°C)
Values
Typ.
6.7
Parameter
Symbol
Conditions
Unit
Min.
Max.
*6
V
DD ⋍ 250V
Total gate charge
-
-
-
-
-
-
-
-
Qg
*6
ID = 2A
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
2.0
nC
V
Qgs
*6
V
GS = 10V
2.5
Qgd
V(plateau)
V
DD ⋍250V, ID = 2A
6.2
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C
*4 L ⋍ 500H, VDD = 50V, RG = 25, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
3/13
Data Sheet
RDD022N50
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
-
Max.
Inverse diode continuous,
forward current
*1
-
-
2
6
A
A
IS
Tc = 25°C
Inverse diode direct current,
pulsed
*2
-
ISM
*6
VGS = 0V, IS = 2A
Forward voltage
-
-
-
-
-
1.5
V
ns
C
A
VSD
*6
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
437
1.21
5.5
-
-
-
trr
IS = 2A
*6
Qrr
di/dt = 100A/s
*6
Irrm
Peak rate of fall of reverse
recovery current
dirr/dt
Tj = 25°C
-
70
-
A/s
Typical Transient Thermal Characteristics
Symbol
Rth1
Value
1.16
2.25
21.5
46
Unit
Symbol
Cth1
Value
Unit
0.00194
0.0115
0.14
Rth2
Cth2
K/W
Ws/K
Rth3
Cth3
Rth4
Cth4
1.24
* Mounted on 25mm x 25mm x 0.8mm
ꢀglass epoxy board with both side copper.
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
4/13
Data Sheet
RDD022N50
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
120
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 100s
100
80
60
40
20
0
10
1
PW = 1ms
0.1
PW = 10ms
0.01
0.001
Ta=25ºC
Single Pulse
0.1
1
10
100
1000
0
50
100
150
200
Junction Temperature : Tj [°C]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
Ta = 25ºC
Single Pulse
th(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 100ºC/W
100
10
R
1
0.1
top D = 1
D = 0.5
0.01
0.001
0.0001
D = 0.1
D = 0.05
D = 0.01
D = Single
0.0001 0.001 0.01 0.1
1
10 100 1000
Pulse Width : PW [s]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
5/13
Data Sheet
RDD022N50
Electrical characteristic curves
Fig.5 Avalanche Power Losses
Fig.4 Avalanche Current vs Inductive Load
5
4000
Ta=25ºC
3500
Ta = 25ºC
VDD = 50V, RG = 25
VGF = 10V, VGR = 0V
4
3000
2500
2000
1500
1000
500
3
2
1
0
0
0.01
0.1
1
10
100
1.0E+04
1.0E+05
1.0E+06
Coil Inductance : L [mH]
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0
25
50
75 100 125 150 175
Junction Temperature : Tj [ºC]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
6/13
Data Sheet
RDD022N50
Electrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Fig.8 Typical Output Characteristics(II)
2.0
1.5
Ta=25ºC
Pulsed
Ta=25ºC
Pulsed
VGS= 10.0V
1.5
VGS= 10.0V
VGS= 6.5V
VGS= 6.5V
VGS= 6.0V
1.0
0.5
0.0
1.0
VGS= 6.0V
VGS= 5.5V
VGS= 5.5V
0.5
VGS= 5.0V
VGS= 5.0V
4
0.0
0
10
20
30
40
50
0
1
2
3
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Fig.10 Tj = 150°C Typical Output
Characteristics(I)
Characteristics(II)
0.6
2.2
Ta=150ºC
Pulsed
Ta=150ºC
Pulsed
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS= 10.0V
VGS= 6.5V
VGS= 6.5V
0.5
0.4
0.3
0.2
0.1
0.0
VGS= 10.0V
VGS= 5.5V
VGS= 4.5V
VGS= 5.5V
VGS= 4.5V
40 50
0
10
20
30
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
7/13
Data Sheet
RDD022N50
Electrical characteristic curves
Fig.11 Breakdown Voltage
vs. Junction Temperature
700
Fig.12 Typical Transfer Characteristics
10
VDS= 10V
Plused
680
660
640
620
600
580
560
540
520
500
1
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.01
0.001
0.0
2.0
4.0
6.0
8.0
10.0
-50 -25
0
25 50 75 100 125 150
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [°C]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Fig.14 Transconductance vs. Drain Current
6
10
VDS= 10V
Plused
5
4
3
2
1
0
1
Ta= 25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
VDS= 10V
ID= 1mA
Plused
0.01
0.01
0.1
1
10
-50 -25
0
25 50 75 100 125 150
Junction Temperature : Tj [°C]
Drain Current : ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
8/13
Data Sheet
RDD022N50
Electrical characteristic curves
Fig.15 Static Drain - Source On - State
Fig.16 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Resistance vs. Junction Temperature
16
12
11
10
9
VGS= 10V
Plused
Ta=25ºC
Pulsed
14
12
10
8
ID = 2.0A
7
ID = 1.0A
8
6
5
ID = 2.0A
6
4
2
0
ID = 1.0A
4
3
2
1
0
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25 50 75 100 125 150
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
100
VGS= 10V
Plused
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
10
1
0.01
0.1
1
10
Drain Current : ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
9/13
Data Sheet
RDD022N50
Electrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
1000
Fig.19 Coss Stored Energy
1.6
Ta=25ºC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Ciss
100
10
Coss
Ta=25ºC
f = 1MHz
VGS = 0V
Crss
1
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
Fig.20 Switching Characteristics
10000
10
VDD ≒ 250V
VGS = 10V
RG= 10
Ta = 25ºC
Pulsed
tf
8
6
td(off)
1000
100
10
td(on)
4
Ta = 25ºC
VDD= 250V
ID= 2A
2
0
tr
Pulsed
1
0.01
0.1
1
10
0
2
4
6
8
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
10/13
Data Sheet
RDD022N50
Electrical characteristic curves
Fig.22 Inverse Diode Forward Current
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
vs. Source - Drain Voltage
10
10000
1000
100
VGS=0V
Pulsed
1
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
Ta=25ºC
VGS = 0V
di / dt = 100A / s
Pulsed
0.01
10
0.1
1
10
0.0
0.5
1.0
1.5
Source - Drain Voltage : VSD [V]
Inverse Diode Forward Current : IS [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
11/13
Data Sheet
RDD022N50
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Pulse width
V
GS
ID
VDS
90%
50%
R
L
50%
10%
10%
90%
V
GS
DS
D.U.T.
V
10%
90%
V
DD
RG
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
V
G
V
GS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Qgs
Qgd
VDD
Charge
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
V
GS
I
AS
VDS
L
V(BR)DSS
D.U.T.
I
AS
RG
VDD
V
DD
V
(BR)DSS
1
2
E
AS
=
L IAS2
V
(BR)DSS
-
V
DD
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
V
GS
IAS
VDS
L
D.U.T.
V(BR)DSS
RG
I
AS
VDD
V
DD
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
I
F
L
t
rr
D.U.T.
I
F
0
VDD
I
rr 10%
DRIVER
MOSFET
I
rr
R
G
drr / d
t
I
rr 90%
I
rr 100%
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
12/13
Data Sheet
RDD022N50
Dimensions (Unit : mm)
A2
B
D
A
b1
c1
CPT3
A1
b2
b3
c
e
b
x
B A
l3
A3
l1
l2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MILIMETERS
MIN
0.00
2.20
INCHES
0.010
DIM
MAX
0.15
2.50
MIN
0.000
0.087
MAX
0.006
0.098
A1
A2
A3
b
b1
b2
b3
c
0.25
0.55
5.00
0.75
5.30
0.022
0.197
0.030
0.209
5.00
0.75
0.197
0.030
0.40
0.40
6.30
5.40
0.60
0.60
6.70
5.80
0.016
0.016
0.248
0.213
0.024
0.024
0.264
0.228
c1
D
E
e
2.30
0.091
H
E
9.00
2.20
0.80
1.20
10.00
2.80
1.40
1.80
0.354
0.087
0.031
0.047
0.394
0.110
0.055
0.071
L
L1
L2
L3
L4
Lp
x
5.30
0.90
0.209
0.035
1.00
-
1.60
0.25
0.039
-
0.063
0.010
MILIMETERS
MIN
INCHES
DIM
MAX
1.00
5.20
2.50
5.50
10.00
MIN
-
-
-
-
MAX
0.04
0.205
0.098
0.217
0.394
b5
b6
ｌ1
ｌ2
ｌ3
-
-
-
-
-
-
Dimension in mm / inches
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.02 - Rev.B
13/13
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
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