RCJ120N25 [ROHM]
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。;型号: | RCJ120N25 |
厂家: | ROHM |
描述: | 电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。 晶体管 |
文件: | 总15页 (文件大小:686K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RCJ120N25
Datasheet
Nch 250V 12A Power MOSFET
Outline
(2)
VDSS
250V
235m
12A
LPT(S)
(SC-83)
RDS(on) (Max.)
ID
(1)
PD
107W
(3)
Features
Inner circuit
1) Low on-resistance.
(1) Gate
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
(2) Drain
(3) Source
∗1
1 BODY DIODE
(1)
(2)
(3)
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Packaging specifications
Packaging
Taping
330
Reel size (mm)
Application
Tape width (mm)
Type
24
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Quantity (pcs)
1,000
TL
Taping code
Marking
RCJ120N25
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
VDSS
Value
250
Unit
V
Drain - Source voltage
*1
Tc = 25°C
A
ID
12
Continuous drain current
*1
Tc = 100°C
A
ID
6.5
*2
Pulsed drain current
A
ID,pulse
48
VGSS
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
V
30
*3
10.5
mJ
A
EAS
*3
6.0
IAR
Tc = 25°C
PD
PD
Tj
107
W
W
°C
°C
Power dissipation
Ta = 25°C *4
1.56
Junction temperature
150
Tstg
Range of storage temperature
55 to 150
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Data Sheet
RCJ120N25
Thermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
RthJC
RthJA
Tsold
-
-
-
-
-
-
1.16
80
°C/W
°C/W
°C
Thermal resistance, junction - case
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
265
Electrical characteristics(Ta = 25°C)
Values
Typ.
-
Parameter
Symbol
V(BR)DSS
IDSS
Conditions
GS = 0V, ID = 1mA
Unit
V
Min.
250
Max.
-
V
Drain - Source breakdown voltage
Zero gate voltage drain current
VDS = 250V, VGS = 0V
Tj = 25°C
-
-
10
A
IGSS
VGS = 30V, VDS = 0V
Gate - Source leakage current
Gate threshold voltage
-
3.0
-
-
-
nA
V
100
5.0
VGS (th)
V
DS = 10V, ID = 1mA
VGS = 10V, ID = 6.0A
GS = 10V, ID = 6.0A
180
235
Static drain - source
on - state resistance
*5
V
RDS(on)
m
-
340
480
-
Tj = 125°C
gfs
VDS = 10V, ID = 6.0A
Forward transfer admittance
3.25
6.50
S
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Data Sheet
RCJ120N25
Electrical characteristics(Ta = 25°C)
Values
Typ.
1800
100
60
Parameter
Symbol
Conditions
VGS = 0V
Unit
Min.
Max.
Ciss
Coss
Crss
Input capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 25V
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
*5
VDD ⋍ 125V, VGS = 10V
33
td(on)
*5
ID = 6.0A
RL = 12
RG = 10
65
tr
*5
Turn - off delay time
Fall time
45
td(off)
*5
20
tf
Gate Charge characteristics(Ta = 25°C)
Values
Typ.
35
Parameter
Symbol
Conditions
DD ⋍ 125V
Unit
Min.
Max.
*5
V
Total gate charge
-
-
-
-
-
-
-
-
Qg
*5
ID = 12A
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
15
nC
V
Qgs
*5
VGS = 10V
12
Qgd
V(plateau)
VDD ⋍ 125V, ID = 12A
7.6
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
12
48
1.5
-
*1
Continuous source current
Pulsed source current
Forward voltage
-
-
-
-
-
-
-
A
A
IS
Tc = 25°C
*2
ISM
*5
VGS = 0V, IS = 12A
-
V
VSD
*5
Reverse recovery time
Reverse recovery charge
105
410
ns
nC
trr
IS = 6.0A
*5
di/dt = 100A/s
-
Qrr
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1%
*3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm)
*5 Pulsed
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Data Sheet
RCJ120N25
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
PW = 100s
100
80
60
40
20
0
PW = 1ms
10
1
Operation in this
area is limited
by RDS(on)
PW = 10ms
0.1
0.01
Ta=25ºC
Single Pulse
0
25
50
75 100 125 150 175
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)
Rth(j-c) = 80ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.0001
0.01
1
100
Pulse Width : PW [s]
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Data Sheet
RCJ120N25
Electrical characteristic curves
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
Fig.4 Avalanche Current vs Inductive Load
120
100
80
60
40
20
0
100
VDD=50V,RG=25
VGF=10V,VGR=0V
Starting Tch=25ºC
10
1
0.1
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
Coil Inductance : L [mH]
Junction Temperature : Tj [°C]
Fig.7 Typical Output Characteristics(II)
Fig.6 Typical Output Characteristics(I)
6
12
VGS=10.0V
VGS=8.0V
Ta=25ºC
Pulsed
VGS=10.0V
VGS=8.0V
Ta=25ºC
Pulsed
10
8
4
2
0
VGS=7.0V
6
VGS=7.0V
VGS=6.5V
4
VGS=6.5V
VGS=6.0V
VGS=5.5V
2
VGS=6.0V
0.8
VGS=5.5V
0
0
0.2
0.4
0.6
1
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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Data Sheet
RCJ120N25
Electrical characteristic curves
Fig.8 Breakdown Voltage
vs. Junction Temperature
Fig.9 Typical Transfer Characteristics
100
10
340
VDS= 10V
VGS = 0V
ID = 1mA
320
300
280
260
240
220
1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
-50
0
50
100
150
Junction Temperature : Tj [°C]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
100
5.5
VDS= 10V
VDS = 10V
ID = 1mA
5.0
4.5
4.0
3.5
3.0
2.5
10
1
Ta= 25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
-50 -25
0
25 50 75 100 125 150
0.01
0.1
1
10
100
Junction Temperature : Tj [°C]
Drain Current : ID [A]
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Data Sheet
RCJ120N25
Electrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
1000
100
10
500
Ta=25ºC
Ta=25ºC
450
400
350
VGS = 10V
300
ID = 12A
250
ID = 6.0A
200
150
100
50
0
0.01
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Drain Current : ID [A]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
500
VGS = 10V
ID = 5A
400
300
200
100
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
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Data Sheet
RCJ120N25
Electrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Drain Current Derating Curve
10000
120
100
80
60
40
20
0
VGS= 10V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
1000
100
10
0.01
0.1
1
10
100
0
25
50
75 100 125 150 175
Drain Current : ID [A]
Junction Temperature : Tj [ºC]
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Data Sheet
RCJ120N25
Electrical characteristic curves
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
Fig.18 Switching Characteristics
10000
10000
1000
100
10
Ta=25ºC
Ciss
VDD= 125V
VGS= 10V
RG=10
tf
1000
100
10
td(off)
Coss
Crss
tr
td(on)
Ta = 25ºC
f = 1MHz
VGS = 0V
1
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.19 Dynamic Input Characteristics
20
Ta=25ºC
VDD= 125V
18
ID= 12A
RG=10
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
Total Gate Charge : Qg [nC]
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Data Sheet
RCJ120N25
Electrical characteristic curves
Fig21 Reverse Recovery Time
vs.Source Current
Fig.20 Source Current
vs. Source - Drain Voltage
1000
100
VGS=0V
10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
100
1
0.1
Ta=25ºC
di / dt = 100A / s
VGS = 0V
10
0.01
0.1
1
10
100
0.0
0.5
1.0
1.5
Source Current : IS [A]
Source-Drain Voltage : VSD [V]
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Data Sheet
RCJ120N25
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Pulse width
V
GS
ID
VDS
90%
50%
R
L
50%
10%
10%
90%
V
GS
DS
D.U.T.
V
10%
90%
V
DD
RG
t
d(on)
td(off)
t
r
t
f
t
on
toff
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
V
G
V
GS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Qgs
Qgd
VDD
Charge
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
VGS
IAS
VDS
L
V(BR)DSS
D.U.T.
I
AS
RG
VDD
V
DD
V
(BR)DSS
1
2
E
AS
=
L IAS2
V
(BR)DSS
-
V
DD
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Data Sheet
RCJ120N25
Dimensions (Unit : mm)
D
A2
A
B
c1
LPTS
A1
b2
b3
e
b
c
A3
x
B A
l3
l1
l2
Patterm of terminal position areas
MILIMETERS
INCHES
DIM
MIN
0.00
4.30
MAX
0.30
4.70
MIN
0
0.169
MAX
0.012
0.185
A1
A2
A3
b
b2
b3
c
c1
D
E
0.25
8.90
0.01
0.35
0.68
0.98
0.027
0.039
1.14
0.30
1.10
9.80
8.80
1.44
0.60
1.50
10.40
9.20
0.045
0.012
0.043
0.386
0.346
0.057
0.024
0.059
0.409
0.362
2.54
0.10
e
H
L
E
12.80
2.70
0.90
13.40
3.30
1.50
0.504
0.106
0.035
0.528
0.13
0.059
L1
L2
L3
L4
Lp
x
1.10
7.25
1.00
0.043
0.285
0.039
0.90
-
1.50
0.25
0.035
-
0.059
0.01
MILIMETERS
MAX
INCHES
DIM
MIN
-
-
-
-
MIN
-
-
-
-
MAX
0.049
0.409
0.083
0.297
0.528
b5
b6
l1
l2
l3
1.23
10.40
2.10
7.55
13.40
-
-
Dimension in mm/inches
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2019.05 - Rev.C
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号:
RCJ160N20
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
ROHM
RCJ200N20
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
ROHM
RCJ220N25
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
ROHM
RCJ220N25TL
Power Field-Effect Transistor, 22A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-83, 3/2 PIN
ROHM
RCJ300N20
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
ROHM
RCJ510N25
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
ROHM
RCJ700N20
电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。
ROHM
RCK04215KOHM+/-0.1%
RESISTOR, METAL FOIL, 0.1 %, 215000 ohm, THROUGH HOLE MOUNT, RADIAL LEADED
VISHAY
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