RB751VM-40 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB751VM-40 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：1037K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB751VM-40
lApplications
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
High speed switching
1.25±0.1
0.1±0.1
ꢀꢀꢀ 0.05
0.9MIN.
lFeatures
1)Ultra small mold type. (UMD2)
2)Low IR
3)High reliability
UMD2
lConstruction
0.7±0.2
ꢀꢀꢀ 0.1
Silicon epitaxial
lStructure
0.3±0.05
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-901A
dot (year week factory)
lTaping specifications (Unit : mm)
φ 1.55±0.05
0.3±0.1
2.0±0.05
4.0±0.1
4.0±0.1
φ 1.05
1.40±0.1
1.0±0.1
lAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
40
30
V
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
30
Io
IFSM
Tj
mA
mA
°C
°C
200
150
Storage temperature
Tstg
-40 to +150
lElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.37
0.5
-
Unit
V
Conditions
VF
IR
IF=1mA
-
-
-
-
-
Reverse current
VR=30V
μA
pF
VR=1V , f=1MHz
Capacitance between terminals
Ct
2
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.06 - Rev.A
1/3
Data Sheet
RB751VM-40
ꢀ
10
1000
100
10
100
f=1MHz
Ta=125℃
Ta=125℃
10
Ta=75℃
Ta=25℃
Ta=75℃
1
1
1
0.1
Ta=-25℃
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
0.01
0.1
0
10
20
30
0
100 200 300 400 500 600 700 800 900 1000
0
10
20
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
320
310
300
290
280
270
260
250
1000
900
800
700
600
500
400
300
200
100
0
Ta=25℃
VR=30V
n=30pcs
Ta=25℃
f=1MHz
VR=1V
Ta=25℃
IF=1mA
n=30pcs
n=10pcs
AVE:245.0nA
AVE:282.4mV
AVE:2.1pF
IR DISPERSION MAP
VF DISPERSION MAP
Ct DISPERSION MAP
30
25
20
15
10
5
20
15
10
5
10
IF=0.1A
IR=0.1A
Ifsm
1cyc
Ifsm
Irrr=0.1*IR
8.3ms 8.3ms
1cyc
8.3ms
5
AVE:7.7ns
AVE:3.24A
0
0
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
20
15
10
5
0.05
0.04
0.03
0.02
0.01
0.00
1000
100
10
Mounted on epoxy board
Rth(j-a)
Rth(j-c)
Ifsm
t
D=1/2
Sin(θ＝180)
DC
1
0
0.00
0.01
0.02
0.03
0.04
0.05
0.001
0.1
10
1000
0.1
1
10
100
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
Data Sheet
RB751VM-40
ꢀ
0.01
0.008
0.006
0.004
0.1
0.08
0.06
0.04
0.02
0
0.10
0.08
0.06
0.04
0.02
0.00
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
D=t/T
VR=15V
Tj=150℃
VR=15V
Tj=150℃
DC
DC
T
T
D=1/2
DC
Sin(θ＝180)
D=1/2
D=1/2
0.002
0
Sin(θ＝180)
Sin(θ＝180)
0
25
50
75
100
125
150
0
10
20
30
0
25
50
75
100
125
150
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
CASE TEMPARATURE:Tc(℃)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(℃)
DERATING CURVE (Io-Ta)
5
4.5
4
3.5
3
AVE:3.34kV
2.5
2
AVE:0.418kV
1.5
1
0.5
0
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
Notice
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