R5011ANX [ROHM]
10V Drive Nch MOSFET; 10V驱动N沟道MOSFET
| 型号： | R5011ANX |
| 厂家： | 
ROHM |
| 描述： | 10V Drive Nch MOSFET |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R5011ANX
Transistors
10V Drive Nch MOSFET
R5011ANX
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
TO-220FM
10.0
φ
3.2
4.5
2.8
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS)
guaranteed to be r30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
1.2
1.3
0.8
(1)Base
2.54
2.54
0.75
2.6
(2)Collector
(3)Emitter
( ) ( ) ( )
1 2 3
zApplications
Switching
zPackaging specifications
Package
zInner circuit
Bulk
−
Type Code
Basic ordering unit (pieces)
R5011ANX
500
∗1
zAbsolute maximum ratings (Ta=25qC)
(1)
(2)
(3)
Parameter
Drain-source voltage
Gate-source voltage
Limits
Symbol
Unit
(1) Gate
(2) Drain
(3) Source
500
VDSS
GSS
V
V
∗1 Body Diode
30
V
∗3
∗1
∗3
∗1
Continuous
Pulsed
11
I
D
A
Drain current
44
I
DP
A
Continuous
Pulsed
11
I
S
A
Source current
(Body Diode)
44
5.5
I
I
SP
AS
AS
A
∗2
∗2
Avalanche Current
Avalanche Energy
A
8.1
E
mJ
W
°C
°C
Total power dissipation (Tc=25°C)
50
P
D
Channel temperature
150
Tch
Range of storage temperature
−55 to +150
Tstg
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, R =25Ω, Starting, Tch=25°C
G
∗3 Limited only by maximum tempterature allowed
1/5
R5011ANX
Transistors
zThermal resistance
Parameter
Symbol
Limits
2.5
Unit
Channel to case
Rth(ch-c)
°C/W
zzElectrical characteristics (Ta=25qC)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Symbol Min.
Max.
Unit
nA
V
Conditions
GS= 30V, VDS=0V
=1mA, VGS=0V
DS=500V, VGS=0V
DS=10V, I =1mA
Typ.
−
I
GSS
(BR)DSS
DSS
−
500
−
100
−
V
V
I
D
−
I
100
4.5
0.5
−
μA
V
V
V
−
V
GS(th)
DS(on)
2.5
−
D
−
∗
∗
R
Ω
I
I
D
=5.5A, VGS=10V
=5.5A, VDS=10V
DS=25V
0.38
−
| Yfs
|
3.5
−
S
D
C
iss
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
1000
400
35
26
28
75
30
30
7
Coss
−
−
GS=0V
Output capacitance
Crss
−
−
f=1MHz
Reverse transfer capacitance
Turn-on delay time
∗
∗
∗
∗
∗
∗
∗
t
d(on)
−
−
I
D=5.5A, VDD 250V
t
r
−
−
VGS=10V
Rise time
t
d(off)
−
−
R
L
=45.5Ω
=10Ω
DD 250V
Turn-off delay time
t
f
−
−
RG
Fall time
Qg
−
−
V
I
Total gate charge
D
=11A
Q
gs
gd
−
−
Gate-source charge
VGS=10V
RL
=22.7Ω / R =10Ω
G
Q
−
−
Gate-drain charge
12
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
IS= 11A, VGS=0V
Unit
V
∗
V
SD
−
−
1.5
∗ Pulsed
2/5
R5011ANX
Transistors
zElectrical characteristic curves
100
20
15
10
5
10
8
10V
Ta= 25°C
Pulsed
Ta= 25°C
Pulsed
Operation in this
PW=100us
10V
area is limited
8.0V
by RDS(ON)
PW=1ms
PW=100ms
10
1
8.0V
7.0V
6.0V
5.5V
5.5V
7.0V
6.5V
6
6.5V
DC operation
4
6.0V
5.0V
0.1
0.01
5.0V
2
Ta = 25°C
VGS= 4.5V
VGS= 4.5V
Single Pulse
0
0
0.1
1
10
100
1000
0
10
20
30
40
50
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE: VDS (V)
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3: Typical Output Characteristics(
)
㸈
Fig.2: Typical Output Characteristics(
)
㸇
100
10
6
5
4
3
2
1
0
10
1
VDS= 10V
Pulsed
Ta= 125°C
VGS= 10V
VDS= 10V
ID= 1mA
Ta= 75°C
Pulsed
Ta= 25°C
Ta= -25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
0.1
0.1
0.01
0.001
0.01
-50
0
50
100
150
0.0
1.5
3.0
4.5
6.0
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
CHANNEL TEMPERATURE: Tch (°C)
DRAIN CURRENT : ID (A)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
1
1
100
10
Ta=25°C
Pulsed
VGS= 10V
Pulsed
VDS= 10V
Pulsed
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
ID= 11.0A
1
ID= 11.0A
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
ID= 5.5A
ID= 5.5A
0.1
0.01
-50
0
50
100
150
0
5
10
15
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE: Tch (°C)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
Fig.9 Forward Transfer Admittance
vs. Drain Current
3/5
R5011ANX
Transistors
10000
1000
100
10
15
10
5
100
Ta= 25°C
DD= 250V
ID= 11A
G= 10ȍ
Pulsed
VGS= 0V
Ciss
V
Pulsed
10
R
Crss
Coss
1
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta= 25°C
f= 1MHz
VGS= 0V
1
0.01
0
0.1
1
10
100
1000
0
0.5
1
1.5
0
10
20
30
40
50
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
TOTAL GATE CHARGE : Qg (nC)
Fig.12 Dynamic Input Characteristics
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10000
1000
100
10
1000
100
10
Ta= 25°C
V
DD= 250V
GS= 10V
G= 10ȍ
Pulsed
tf
V
R
td(off)
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
td(on)
tr
Pulsed
1
0.01
0.1
1
10
100
0.1
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
DRAIN CURRENT : ID (A)
Fig.14 Switching Characteristics
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
䇭
1
Ta = 25°C
Single Pulse : 1Unit
Rth ch-a t ×Rth ch-a
t
=
䋨
䋩䋨 䋩 䌲䋨 䋩 䋨 䋩
0.1
Rth ch-a = 45.8°C/W
䋨
䋩
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
4/5
R5011ANX
Transistors
zSwitching characteristics measurement circuit
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
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ꢀ
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Fig.1-1 Switching Time Measurement Circuit!
Fig.1-2 Switching Waveforms ꢀ
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ꢀ
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IG(Const.)
ꢀꢀ
ꢀ
ꢀ
ꢀ
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Fig.2-1 Gate Charge Measurement Circuit!
Fig.2-2 Gate Charge Waveform ꢀ
ꢀ
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ꢀ
ꢀ
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ꢀ
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Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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