MMSTA56 [ROHM]
PNP General Purpose Transistor; PNP通用晶体管
| 型号： | MMSTA56 |
| 厂家： | 
ROHM |
| 描述： | PNP General Purpose Transistor |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSTA56 / MMSTA56 / MPSA56
Transistors
PNP General Purpose Transistor
SSTA56 / MMSTA56 / MPSA56
!Features
!External dimensions (Units : mm)
1) BV 40V (I = 1mA)
CEO < −
C
−
SSTA56
2) Complements the SSTA06 / MMSTA06 / MPSA06.
2.9±0.2
1.9±0.2
0.95 0.95
+0.2
0.95
−0.1
0.45±0.1
(2)
(1)
0~0.1
0.2Min.
!Package, marking and packaging specifications
(3)
Part No.
Packaging type
Marking
SSTA56
SST3
R2G
MMSTA56
SMT3
R2G
MPSA56
TO-92
-
+0.1
(1) Emitter
(2) Base
(3) Collector
0.15
+0.1
−0.05
−0.06
0.4
All terminals have same dimensions
ROHM : SST3
MMSTA56
T116
T146
T93
Code
Basic ordering unit (pieces)
3000
3000
3000
2.9±0.2
1.9±0.2
0.95 0.95
+0.2
1.1
−0.1
0.8±0.1
(2)
(1)
!Absolute maximum ratings (Ta = 25°C)
0~0.1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−80
−80
−4
−0.5
0.2
Unit
V
(3)
VCBO
VCEO
VEBO
V
+0.1
0.15
−0.06
+0.1
−0.05
(1) Emitter
(2) Base
(3) Collector
0.4
V
All terminals have same dimensions
ROHM : SMT3
EIAJ : SC-59
I
C
A
SSTA56, MMSTA56
Collector power
dissipation
P
C
W
0.625
150
MPSA56
Junction temperature
Storage temperature
Tj
°C
°C
4.8±
0.2
3.7±0.2
Tstg
−55~+150
MPSA56
0.5±0.1
(1) (2) (3)
5
+
0.3
(1) Emitter
(2) Base
(3) Collector
2.5
−
0.1
ROHM : TO-92
EIAJ : SC-43
2.3
0.45
±0.1
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
−4
−80
-
-
-
-
-
-
-
-
-
-
-
V
V
I
C
C
= −100µA
= −1mA
-
−0.1
−1
−0.25
−1.2
-
I
I
I
CBO
V
CB = −80V
CE = −60V
Collector cutoff current
µA
CEO
-
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(on)
FE
-
V
V
I
C/I
B
= −100mA/−10mA
= −1V/−100mA
-
V
V
V
CE/I
B
V
100
100
50
CE = −1V , I
CE = −1V , I
CE = −1V , I
C
C
E
= −10mA
= −100mA
DC current transfer ratio
Transition frequency
h
-
-
f
T
-
MHz
V
= 100mA , f = 100MHz
SSTA56 / MMSTA56 / MPSA56
Transistors
!Electrical characteristic curves
500
1000
1000
Ta=25°C
VCE=3V
Ta=25°C
4.5mA
4.0mA
3.5mA
3.0mA
400
300
200
Ta=125°C
25°C
VCC=5V
−40°C
3V
100
100
1.0mA
0.5mA
1V
100
0
I
B
=0mA
10
10
1
10
100
1000
1
10
100
1000
0
V
0.4
0.8
1.2
1.6
2.0
I
C
-COLLECTOR CURRENT (mA)
CE-COLLECTOR-EMITTER VOLTAGE (V)
IC-COLLECTOR CURRENT (mA)
Fig.2 DC current gain vs. collector
Fig.1 Grounded emitter output
characteristics
Fig.3 DC current gain vs. collector
current ( Ι )
current ( ΙΙ )
1.8
1.6
1.4
1.2
1.0
1.8
Ta=25°C
=10
VCE=3V
IC / IB=10
IC / IB
1.6
1.4
1.2
1.0
0.3
0.2
Ta=125°C
25°C
Ta=−40°C
0.8
0.6
0.4
0.8
0.6
0.4
25°C
−40°C
125°C
0.1
0
0.2
0
0.2
0
1
10
100
1000
1
10
100
1000
1
10
100
1000
I
C
-COLLECTOR CURRENT (mA)
I
C
-COLLECTOR CURRENT (mA)
IC-COLLECTOR CURRENT (mA)
Fig.6 Grounded emitter propagation
characteristics
Fig.4 Collector emitter saturation
voltage vs. collector current
Fig.5 Base-emitter saturation
voltage vs. collector current
1000
500
Ta=25°C
Ta=25°C
V
CE=10V
f=1MHz
100
Cib
100
Cob
10
5
10
1
10
100
1000
0.5
1
10
50
I
C
-COLLECTOR CURRENT (mA)
REVERSE BIAS VOLTAGE (V)
Fig.8 Gain bandwidth product
vs. collector current
Fig.7 Input/output capecitance
vs. voltage
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