IMX8T108 [ROHM]
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 2-Element, NPN, Silicon, SMT6, SC-74, 6 PIN;
| 型号： | IMX8T108 |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 2-Element, NPN, Silicon, SMT6, SC-74, 6 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMX8
Transistors
General purpose (dual transistors)
IMX8
!Features
!External dimensions (Units : mm)
1) Two 2SC3906K chips in an SMT package.
2) High breakdown voltage.
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
1.6
2.8
V
V
V
CBO
CEO
EBO
120
120
V
5
50
V
I
C
mA
mW
°C
°C
Power dissipation
Pc
Tj
300(TOTAL)
150
∗
Junction temperature
Storage temperature
0.3Min.
Tstg
−55~+150
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
200mW per element must not be exceeded.
∗
!Package, marking, and packaging specifications
Part No.
IMX8
SMT6
X4
Package
Marking
T108
3000
Code
Basic ordering unit (pieces)
!Equivalent circuit
(4) (5) (6)
(3) (2) (1)
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
120
120
5
−
−
−
−
−
−
140
−
−
−
−
0.5
0.5
820
−
V
V
I
I
I
C
=
1mA
50µA
C=
V
E
=
50µA
100V
4V
6V, I
CE=−12V, I
/I 10mA/1mA
I
CBO
EBO
FE
−
−
180
−
−
µA
µA
−
MHz
V
V
V
V
V
CB
EB
CE
=
=
=
Emitter cutoff current
I
DC current transfer ratio
h
C
=
E
2mA
Transition frequency
f
T
=2mA, f=100MHz
∗
Collector-emitter saturation voltage
VCE(sat)
0.5
IC B=
Transition frequency of the device
∗
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