HS8MA2 [ROHM]
HS8MA2在紧凑而且对称的DFN封装中内置共漏极的30V Pch+Nch MOSFET。适合开关、电机驱动电路用途。;
| 型号： | HS8MA2 |
| 厂家： | 
ROHM |
| 描述： | HS8MA2在紧凑而且对称的DFN封装中内置共漏极的30V Pch+Nch MOSFET。适合开关、电机驱动电路用途。 开关 电机 驱动 |
| 文件： | 总20页 (文件大小：4065K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS8MA2
ꢀꢀ30V Pch+Nch Power MOSFET
Datasheet
ꢀꢀ
lOutline
ꢀ
DFN3333-9DC
Tr1:Pch Tr2:Nch
-30V 30V
Symbol
VDSS
HSML3333L9
RDS(on)(Max.)
80mΩ 35mΩ
±5.5A ±7.0A
4.0W
ꢀ
ID
PD
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llFeatures
1) Low on - resistance
llInner circuit
2) Small Surface Mount Package
3) Pb-free plating ; RoHS compliant
4) Halogen Free
llPackaging specifications
Embossed
Tape
Packing
llApplication
Switching
Reel size (mm)
180
12
Tape width (mm)
Quantity (pcs)
Taping code
Marking
Type
Motor Drive
1000
TCR1
HS8MA2
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)
a
Value
Tr1:Pch Tr2:Nch
Parameter
Drain - Source voltage
Symbol
Unit
VDSS
-30
±5.5
±30
±20
30
V
A
A
V
*1
ID
Continuous drain current
Pulsed drain current
±7.0
±30
±20
*2
IDP
VGSS
Gate - Source voltage
*1
PD
4.0
2.0
Power dissipation
total
W
*3
PD
Tj
Junction temperature
150
℃
℃
Tstg
Operating junction and storage temperature range
-55 to +150
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© 2019 ROHMCo., Ltd. All rights reserved.
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1/19
20191011 - Rev.001
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HS8MA2
Datasheet
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llThermal resistance
Values
Parameter
Symbol
Unit
Min. Typ. Max.
*3
RthJA
Thermal resistance, junction - ambient
-
-
83.3 ℃/W
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol Type
Conditions
Unit
Min. Typ. Max.
V
= 0V, I = -1mA
D
Tr1
-30
-
-
-
GS
Drain - Source breakdown
voltage
V(BR)DSS
V
mV/℃
μA
Tr2 V = 0V, I = 1mA
30
-
GS
D
ΔV
I = -1mA, referenced to 25℃
D
ꢀ
ꢀ Tr1
-
-22
21
-
-
(BR)DSS
Breakdown voltage
temperature coefficient
ΔT
I = 1mA, referenced to 25℃
D
ꢀ
ꢀ
ꢀ
j ꢀ Tr2
-
-
-1
Tr1 V = -30V, V = 0V
-
DS
GS
Zero gate voltage
drain current
IDSS
Tr2 V = 30V, V = 0V
-
-
1
DS
GS
Tr1 V = ±20V, VDS = 0V
-
-
±100
±100
-2.5
2.5
-
GS
Gate - Source
leakage current
IGSS
nA
Tr2 V = ±20V, VDS = 0V
-
-
GS
Tr1 V = -10V, I = -1mA
-1.0
-
DS
D
Gate threshold
voltage
VGS(th)
ΔV
V
Tr2 V = 10V, I = 1mA
1.0
-
DS
D
I = -1mA, referenced to 25℃
D
ꢀ
ꢀ Tr1
-
2.9
-3
55
80
25
40
10
3
GS(th)
Gate threshold voltage
temperature coefficient
mV/℃
ΔT
I = 1mA, referenced to 25℃
D
ꢀ
ꢀ
ꢀ
ꢀ
Tr2
-
-
j
V
GS
V
GS
V
GS
V
GS
= -10V, I = -5.5A
-
80
115
35
56
-
D
Tr1
Tr2
= -4.5V, I = -5.5A
-
-
D
Static drain - source
on - state resistance
*4
RDS(on)
mΩ
= 10V, I = 7.0A
D
= 4.5V, I = 7.0A
-
D
Tr1
Tr2
-
RG
Gate resistance
f=1MHz, open drain
Ω
S
-
-
Tr1 V = -5V, I = -3A
1.9
1.4
-
-
DS
D
Forward Transfer
Admittance
|Y |*4
fs
V
DS
= 5V, I = 4.5A
Tr2
-
-
D
*1 Pw ≤ 1s, Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Pulsed
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© 2019 ROHMCo., Ltd. All rights reserved.
2/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
= 0V
Unit
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
320
68
-
-
-
-
-
-
-
GS
= -10V
pF
ns
DS
f = 1MHz
54
*4
V
DD
⋍ -15V, V = -10V
GS
td(on)
7.9
tr*4
I = -1.5A
16.8
27.6
8.5
D
*4
td(off)
R = 10Ω
Turn - off delay time
Fall time
L
tf*4
R = 10Ω
G
<Tr2>
Values
Parameter
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
365
62
-
-
-
-
-
-
-
GS
= 10V
DS
f = 1MHz
50
*4
V
DD
⋍ 15V, V = 10V
GS
td(on)
7.2
8.0
12.0
5.7
tr*4
I = 2.2A
D
ns
*4
td(off)
R = 6.8Ω
Turn - off delay time
Fall time
L
tf*4
R = 10Ω
G
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© 2019 ROHMCo., Ltd. All rights reserved.
3/19
20191011 - Rev.001
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HS8MA2
Datasheet
llGate charge characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ. Max.
V
= -10V
= -4.5V
-
-
-
-
7.8
4.3
1.6
1.5
-
-
-
-
GS
*4
Qg
Total gate charge
V
⋍ -15V
DD
nC
*4
I = -3A
D
V
Qgs
Gate - Source charge
Gate - Drain charge
<Tr2>
GS
*4
Qgd
Values
Parameter
Symbol
Conditions
Unit
nC
Min.
Typ. Max.
V
= 10V
= 4.5V
-
-
-
-
8.4
4.7
1.7
1.6
-
-
-
-
GS
*4
Qg
Total gate charge
V
⋍ 15V
DD
*4
I = 4.5A
V
Qgs
D
Gate - Source charge
Gate - Drain charge
GS
*4
Qgd
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
IS
Conditions
Unit
Min.
Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
-
-
-
-
-
-
-1.0
-30
T = 25℃
A
V
a
*2
ISP
*4
VSD
V
GS
= 0V, I = -1.0A
-1.2
S
<Tr2>
Values
Parameter
Symbol
IS
Conditions
Unit
Min.
Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
-
-
-
-
-
-
1.0
30
T = 25℃
A
V
a
*2
ISP
*4
VSD
V
GS
= 0V, I = 1.0A
S
1.2
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© 2019 ROHMCo., Ltd. All rights reserved.
4/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Fig.4 Single Pulse Maximum Power
ꢀꢀꢀꢀResistance vs. Pulse Width
ꢀꢀꢀꢀDissipation
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© 2019 ROHMCo., Ltd. All rights reserved.
5/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr1>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperature
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© 2019 ROHMCo., Ltd. All rights reserved.
6/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr1>
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperature
Fig.10 Forward Transfer Admittance vs.
ꢀꢀꢀꢀꢀDrain Current
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© 2019 ROHMCo., Ltd. All rights reserved.
7/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr1>
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Junction Temperature
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© 2019 ROHMCo., Ltd. All rights reserved.
8/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr1>
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (I)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (III)
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© 2019 ROHMCo., Ltd. All rights reserved.
9/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr1>
Fig.17 Typical Capacitances vs.
Fig.18 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.19 Typical Gate Charge
Fig.20 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
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© 2019 ROHMCo., Ltd. All rights reserved.
10/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Fig.4 Single Pulse Maximum Power
ꢀꢀꢀꢀResistance vs. Pulse Width
ꢀꢀꢀꢀDissipation
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© 2019 ROHMCo., Ltd. All rights reserved.
11/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr2>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperature
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© 2019 ROHMCo., Ltd. All rights reserved.
12/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr2>
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperature
Fig.10 Forward Transfer Admittance vs.
ꢀꢀꢀꢀꢀDrain Current
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© 2019 ROHMCo., Ltd. All rights reserved.
13/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr2>
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Junction Temperature
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14/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr2>
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (I)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (III)
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© 2019 ROHMCo., Ltd. All rights reserved.
15/19
20191011 - Rev.001
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HS8MA2
Datasheet
llElectrical characteristic curves <Tr2>
Fig.17 Typical Capacitances vs.
Fig.18 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.19 Typical Gate Charge
Fig.20 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
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16/19
20191011 - Rev.001
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HS8MA2
Datasheet
llMeasurement circuits <Tr1>
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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17/19
20191011 - Rev.001
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HS8MA2
Datasheet
llMeasurement circuits <Tr2>
Fig.3-1 Switching Time Measurement Circuit
Fig.3-2 Switching Waveforms
Fig.4-1 Gate Charge Measurement Circuit
Fig.4-2 Gate Charge Waveform
llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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www.rohm.com
© 2019 ROHMCo., Ltd. All rights reserved.
18/19
20191011 - Rev.001
HS8MA2
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Datasheet
llDimensions
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www.rohm.com
© 2019 ROHMCo., Ltd. All rights reserved.
19/19
20191011 - Rev.001
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