FMA11AT149 [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,;![FMA11AT149](http://pdffile.icpdf.com/pdf2/p00234/img/icpdf/FMJ1AT149_1373704_icpdf.jpg)
型号: | FMA11AT149 |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, |
文件: | 总2页 (文件大小:82K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00295/img/page/FMA16N50E_1788345_files/FMA16N50E_1788345_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00295/img/page/FMA16N50E_1788345_files/FMA16N50E_1788345_2.jpg)
FMA16N50E
Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FUJI
![](http://pdffile.icpdf.com/pdf2/p00221/img/page/FMA16N60E_1287349_files/FMA16N60E_1287349_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00221/img/page/FMA16N60E_1287349_files/FMA16N60E_1287349_2.jpg)
FMA16N60E
Power Field-Effect Transistor, 16A I(D), 600V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FUJI
![](http://pdffile.icpdf.com/pdf2/p00314/img/page/FMA19N60E_1887235_files/FMA19N60E_1887235_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00314/img/page/FMA19N60E_1887235_files/FMA19N60E_1887235_2.jpg)
FMA19N60E
Power Field-Effect Transistor, 19A I(D), 600V, 0.365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FUJI
![](http://pdffile.icpdf.com/pdf2/p00258/img/page/FMA1AT110_1560608_files/FMA1AT110_1560608_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00258/img/page/FMA1AT110_1560608_files/FMA1AT110_1560608_2.jpg)
FMA1AT110
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SMT5, SC-74A, 5 PIN
ROHM
![](http://pdffile.icpdf.com/pdf2/p00253/img/page/FMA23N50E_1530017_files/FMA23N50E_1530017_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00253/img/page/FMA23N50E_1530017_files/FMA23N50E_1530017_2.jpg)
FMA23N50E
Power Field-Effect Transistor, 23A I(D), 500V, 0.245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FUJI
©2020 ICPDF网 联系我们和版权申明