EMG2T2R [ROHM]
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 PIN;
| 型号： | EMG2T2R |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 PIN 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：1404K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMG2 / UMG2N / FMG2A
Datasheet
Emitter common (dual digital transistors)
llOutline
Parameter
DTr1 and DTr2
50V
SOT-55
SOT-35
V
CC
I
100mA
47kΩ
C(MAX.)
ꢀ
ꢀ
R
1
EMG2
UMG2N
(UMT5)
R
2
(EMT5)
47kΩ
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SOT-25
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llFeatures
1)Two DTC144E chips in a EMT or UMT or
ꢀ SMT package.
ꢀ
ꢀ
ꢀ
ꢀ
FMG2A
(SMT5)
ꢀ
ꢀ
2)Mounting cost and area can be cut in half.
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llInner circuit
EMG2 / UMG2N
FMG2A
llApplication
INVERTER, INTERFACE, DRIVER
ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ
llPackaging specifications
Basic
ordering
Package
Taping Reel size Tape width
Part No.
Package
Marking
size
1616
2021
2928
code
T2R
TR
(mm)
180
180
180
(mm)
unit.(pcs)
SOT-553
(EMT5)
EMG2
UMG2N
FMG2A
8
8
8
8000
G2
G2
G2
SOT-353
(UMT5)
3000
3000
SOT-25
(SMT5)
T148
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
1/7
20151001 - Rev.002
EMG2 / UMG2N / FMG2A
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
VCC
VIN
Values
50
Unit
V
Supply voltage
Input voltage
Output current
Collector current
EMG2
-10 to 40
30
V
IO
mA
mA
*1
IC(MAX)
100
*2*3
PD
150
*2*3
PD
Power dissipation
mW
UMG2N
FMG2A
150
*2*4
PD
300
Tj
Junction temperature
150
℃
℃
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Values
Parameter
Symbol
Conditions
= 5V, I = 100μA
Unit
V
Min.
-
Typ.
Max.
0.5
-
VI(off)
VI(on)
VO(on)
II
V
-
-
CC
O
Input voltage
V = 0.3V, I = 2mA
3.0
-
O
O
I = 10mA, I = 0.5mA
Output voltage
Input current
100
-
300
180
500
-
mV
μA
nA
-
O
I
V = 5V
-
I
IO(off)
GI
V
CC
= 50V, V = 0V
I
Output current
DC current gain
Input resistance
Resistance ratio
-
-
V = 5V, I = 5mA
68
32.9
0.8
-
O
O
R1
-
-
47
1.0
61.1
1.2
kΩ
-
R2/R1
V
= 10V, I = -5mA,
E
CE
*1
fT
Transition frequency
-
250
-
MHz
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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ꢀ
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/7
20151001 - Rev.002
ꢀ ꢀ ꢀ
EMG2 / UMG2N / FMG2A
Datasheet
llElectrical characteristic curves (T = 25°C)
a
<For DTr1 and DTr2 in common>
Fig.1 Input Voltage vs. Output Current
Fig.2 Output Current vs. Input Voltage
ꢀꢀꢀꢀ(ON Characteristics)
ꢀꢀꢀꢀ(OFF Characteristics)
Fig.3 Output Current vs. Output Voltage
Fig.4 DC Current Gain vs. Output Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/7
20151001 - Rev.002
ꢀ ꢀ ꢀ
EMG2 / UMG2N / FMG2A
Datasheet
llElectrical characteristic curves (T = 25°C)
a
<For DTr1 and DTr2 in common>
Fig.5 Output Voltage vs. Output Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/7
20151001 - Rev.002
EMG2 / UMG2N / FMG2A
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/7
20151001 - Rev.002
EMG2 / UMG2N / FMG2A
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/7
20151001 - Rev.002
EMG2 / UMG2N / FMG2A
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/7
20151001 - Rev.002
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