DTC124TE [ROHM]
Digital transistors (built-in resistor); 数字晶体管（内置电阻）
| 型号： | DTC124TE |
| 厂家： | 
ROHM |
| 描述： | Digital transistors (built-in resistor) |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
Digital transistors (built-in resistor)
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
!Features
!External dimensions (Units : mm)
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
DTC124TH
1.6
0.85
(
)
1
(
)
2
( )
3
2) The bias resistors consist of thinfilm resistors with
complete of the input. They also have the advantage
of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making device design easy.
(1) Emitter
(2) Base
(3) Collector
ROHM
EIAJ
:
EMT3 Flat lead
:
SC-89
Abbreviated symbol
: 05
DTC124TE
( )
1
( )
2
( )
3
0.8
1.6
!Equivalent circuit
0.1Min.
(1)Emitter
(2)Base
(3)Collector
ROHM
EIAJ
:
EMT3
:
SC-75A
Abbreviated symbol
: 05
C
B
R1
DTC124TUA
E
1.25
2.1
B : Base
C : Collector
E : Emitter
Each lead has same dimensions
0.1~0.4
(1)Emitter
(2)Base
(3)Collector
ROHM
EIAJ
:
UMT3
Abbreviated symbol
: 05
:
SC-70
DTC124TKA
1.6
2.8
Each lead has same dimensions
0.3~0.6
(1)Emitter
(2)Base
(3)Collector
ROHM
EIAJ
:
SMT3
Abbreviated symbol
:
05
:
SC-59
DTC124TSA
4
2
0.45
Taping specifications
0.45
2.5 0.5
5
)( )(
(
(
(
1)
2)
3)
Emitter
Collector
Base
(
1
)
3
2
ROHM
EIAJ
:
SPT
:
SC-72
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
!Absolute maximum ratings (Ta = 25°C)
Limits(DTC124T )
Parameter
Symbol
Unit
V
H
E
UA
50
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
50
5
V
V
I
C
100
mA
150
Collector power dissipation
Junction temperature
Storage temperature
200
150
−55 ~ +150
300
Pc
Tj
mW
°C
Tstg
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
−
−
−
−
−
−
−
Collector-base breakdown voltage
BVCBO
50
50
5
V
V
I
I
I
C
=50µA
=1mA
−
Collector-emitter breakdown voltage BVCEO
C
−
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
V
E
=50µA
CB=50V
EB=4V
−
I
CBO
EBO
CE(sat)
FE
0.5
0.5
0.3
µA
µA
V
V
V
−
−
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
V
I
C/I
B
=5mA/0.5mA
=1mA
−
h
100 250 600
V
CE=5V,I
C
−
R1
15.4
22
28.6 kΩ
−
−
∗
Transition frequency
f
T
250
MHZ
VCE=10V,I
E
=−5mA,f=100MH
Z
∗Transition frequency of the device
!Packaging specifications
Package
EMT3H
Taping
T2L
EMT3
Taping
TL
UMT3
SMT3
Taping
T146
SST3
Packaging type
Code
Taping
Taping
TP
T106
3000
5000
Basic ordering unit (pieces)
8000
3000
Part No.
3000
−
−
−
−
−
−
−
−
−
−
DTC124TH
−
−
−
−
DTC124TE
−
−
−
DTC124TUA
DTC124TKA
DTC124TSA
−
−
−
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Transistors
!Electrical characteristic curves
1k
1
V
CE=5V
lC/lB=10
500
500m
200m
100m
50m
200
100
Ta=100˚C
Ta=100˚C
25˚C
25˚C
-40˚C
50
-40˚C
20
10
5
20m
10m
5m
2m
1m
2
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C(A)
COLLECTOR CURRENT : IC(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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