DTC124GUA_09 [ROHM]
100mA / 50V Digital transistors (with built-in resistors); 百毫安/ 50V数字晶体管（带内置式电阻器）
| 型号： | DTC124GUA_09 |
| 厂家： | 
ROHM |
| 描述： | 100mA / 50V Digital transistors (with built-in resistors) |
| 文件： | 总3页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
100mA / 50V Digital transistors
(with built-in resistors)
DTC124GUA / DTC124GKA
Applications
Dimensions (Unit : mm)
Inverter, Interface, Driver
DTC124GUA
2.0
0.9
0.7
0.2
0.3
Features
(
)
1)The built-in bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic effects
are almost completely eliminated.
2)Only the on / off conditions need to be set for operation, making the
device design easy.
3
(
2
)
( )
1
(1) GND
(2) IN
(3) OUT
0.650.65
1.3
0.15
3)Higher mounting densities can be achieved.
ROHM : UMT3
EIAJ : SC-70
Abbreviated symbol : K25
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
DTC124GKA
1.1
0.8
2.9
0.4
( )
3
Packaging specifications
( )
( )
1
UMT3
Taping
T106
SMT3
Taping
T146
3000
−
2
Package
Packaging type
Code
(1) GND
(2) IN
(3) OUT
0.95 0.95
1.9
0.15
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : K25
3000
Part No. Basic ordering unit (pieces)
DTC124GUA
DTC124GKA
−
Absolute maximum ratings (Ta=25C)
Inner circuit
Parameter
Symbol
Limits
Unit
Collector-base voltage
V
V
V
CBO
CEO
EBO
50
50
V
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
5
C
E
B
I
C
100
200
mA
R
Collector power dissipation
P
C
mW
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
E : Emitter
C : Collector
B : Base
R=22kΩ
www.rohm.com
2009.06 - Rev.C
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
DTC124GUA / DTC124GKA
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
50
50
5
I
I
I
C
=50μA
=1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
C
V
−
−
V
E
=330μA
CB=50V
EB=4V
I
CBO
EBO
CE(sat)
FE
−
−
0.5
260
0.3
−
μA
μA
V
V
V
Emitter cutoff current
I
140
−
−
Collector-emitter saturation voltage
DC current transfer ratio
V
−
IC
=10mA, I
B=0.5mA
h
56
15.4
−
−
−
IC
=5mA, VCE=5V
Emitter-base resistance
R
22
250
28.6
−
kΩ
MHz
−
Transition frequency
fT
∗
V
CE=10V, I = −5mA, f=100MHz
E
∗ Characteristics of built-in transistor
Electrical characteristic curves
1k
1
V
CE=5V
IC/IB=20/1
500
500m
Ta=100°C
Ta=100°C
Ta= 40°C
Ta=25°C
200
100
50
200m
100m
50m
Ta=25°C
Ta= 40°C
20
20m
10
5
10m
5m
2
1
2m
1m
100∝ 200∝ 500∝ 1m 2m
5m 10m 20m
50m 100m
100∝ 200∝ 500∝ 1m 2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
www.rohm.com
2009.06 - Rev.C
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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© 2009 ROHM Co., Ltd. All rights reserved.
R0039
A
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