DTC115EETL [ROHM]
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors); NPN 100毫安50V数字晶体管（偏置电阻内置晶体管）
| 型号： | DTC115EETL |
| 厂家： | 
ROHM |
| 描述： | NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) |
| 文件： | 总10页 (文件大小：1392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC115E series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
llOutline
Parameter
Value
50V
VMT3
EMT3F
V
CC
I
100mA
C(MAX.)
ꢀ
ꢀ
R
100kΩ
100kΩ
1
DTC115EM
(SC-105AA)
DTC115EEB
R
2
(SC-89)
EMT3
UMT3
llFeatures
1) Built-In Biasing Resistors, R = R = 100kΩ
1
2
ꢀ
ꢀ
2) Built-in bias resistors enable the configuration of
ꢀan inverter circuit without connecting external
ꢀinput resistors (see inner circuit) .
DTC115EE
SOT-416(SC-75A)
DTC115EUA
SOT-323(SC-70)
SMT3
ꢀ
3) The bias resistors consist of thin-film resistors
ꢀwith complete isolation to allow negative biasing
ꢀof the input. They also have the advantage of
ꢀcompletely eliminating parasitic effects.
4) Only the on/off conditions need to be set
ꢀfor operation, making the circuit design easy.
5) Complementary PNP Types: DTA115E series
6) Lead Free/RoHS Compliant.
ꢀ
ꢀ
ꢀ
DTC115EKA
SOT-346(SC-59)
ꢀ
ꢀ
llInner circuit
llApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
llPackaging specifications
Basic
Package
size
Taping
Reel size Tape width
Part No.
DTC115EM
Package
ordering
Marking
code
(mm)
(mm)
unit.(pcs)
VMT3
EMT3F
EMT3
UMT3
SMT3
1212
1616
1616
2021
2928
T2L
TL
180
180
180
180
180
8
8
8
8
8
8000
3000
3000
3000
3000
29
29
29
29
29
DTC115EEB
DTC115EE
TL
DTC115EUA
DTC115EKA
T106
T146
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
1/9
20121023 - Rev.001
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
DTC115E series
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCC
VIN
Values
50
Unit
V
Supply voltage
Input voltage
-10 to 40
20
V
IO
Output current
mA
mA
*1
IC(MAX)
Collector current
DTC115EM
100
150
DTC115EEB
150
*2
PD
Power dissipation
DTC115EE
DTC115EUA
DTC115EKA
150
mW
200
200
Tj
Junction temperature
150
℃
℃
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
= 5V, I = 100μA
Unit
V
Min.
-
Typ.
Max.
0.5
-
VI(off)
VI(on)
VO(on)
II
V
-
CC
O
Input voltage
V = 0.3V, I = 1mA
3
-
0.1
-
O
O
I / I = 5mA / 0.25mA
Output voltage
Input current
-
0.3
0.15
0.5
-
V
mA
μA
-
O
I
V = 5V
-
I
IO(off)
GI
V
CC
= 50V, V = 0V
I
Output current
DC current gain
Input resistance
Resistance ratio
-
-
V = 5V, I = 5mA
82
70
0.8
-
O
O
R1
-
-
100
1
130
1.2
kΩ
-
R2/R1
V
= 10V, I = -5mA,
E
CE
*1
fT
Transition frequency
-
250
-
MHz
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2012 ROHMCo., Ltd. All rights reserved.
2/9
20121023 - Rev.001
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DTC115E series
Datasheet
llElectrical characteristic curves (T =25°C)
a
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
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© 2012 ROHMCo., Ltd. All rights reserved.
3/9
20121023 - Rev.001
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DTC115E series
Datasheet
llElectrical characteristic curves (T =25°C)
a
Fig.5 Output voltage vs. output current
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
4/9
20121023 - Rev.001
DTC115E series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
5/9
20121023 - Rev.001
DTC115E series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
6/9
20121023 - Rev.001
DTC115E series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
7/9
20121023 - Rev.001
DTC115E series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
8/9
20121023 - Rev.001
DTC115E series
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Datasheet
llDimensions
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© 2012 ROHMCo., Ltd. All rights reserved.
9/9
20121023 - Rev.001
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