DTA144TMT2L [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN;
| 型号： | DTA144TMT2L |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：1262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTA144T series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
llOutline
Parameter
Value
-50V
VMT3
EMT3
V
CEO
I
-100mA
C
ꢀ
ꢀ
R
47kΩ
1
DTA144TM
(SC-105AA)
DA144TE
ST-416(SC-75A)
ꢀ
ꢀ
UMT3
SMT3
llFeatures
1) Built-In Biasing Resistor
ꢀ
ꢀ
2) Built-in bias resistors enable the configuration of
ꢀan inverter circuit without connecting external
ꢀinput resistors (see inner circuit) .
DTA
SO-323C-70)
DTA144TKA
SOT-346(SC-59)
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3) The bias resistors consist of thin-film resistors
ꢀwith complete isolation to allow negative biasing
ꢀof the input. They also have the advantage of
ꢀcompletely eliminating parasitic effects.
4) Only the on/off conditions need to be set
ꢀfor operation, making the circuit design eay.
5) Complementary NPN Types: DTC144sies
6) Lead Free/RoHS Compliant.
llner circuit
llApplication
B: BASE
Switching circuit, Ierter circuit, Intee circuit,
Driver circuit
C: COLLECTOR
E: EMITTER
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llacg specifications
Basic
Package
size
Taping
code
Reel size Tape width
Part No.
Package
ordering
Marking
(mm)
(mm)
unit.(pcs)
DTA144TM
VMT3
EMT3
UMT3
SMT3
1212
1616
2021
2928
T2L
TL
180
180
180
180
8
8
8
8
8000
3000
3000
3000
96
96
96
96
DTA144TE
DTA144TUA
DTA144TKA
T106
T146
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
1/7
20121023 - Rev.001
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DTA144T series
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
-50
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
-50
V
-5
V
-100
15
mA
DTA144TM
DTA144TE
Power dissipation
150
*1
PD
mW
DTA144TUA
00
DTA144TKA
Junction temperature
200
Tj
150
℃
℃
T
Range of storage temperature
-55 +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
-50
Typ.
Max.
-
Collector-base breakdown
voltage
BO
BVCEO
I = -5
-
V
V
C
Collector-emitter breakdown
voltage
I = -1mA
-50
-
-
C
BVEBO
BO
= -50μA
Emitter-base breawn oltage
Collector cut-off crent
-5
-
-
-
V
μA
μA
V
E
V
CB
= -50V
-
-
-0.5
-0.5
-0.3
600
61.1
IEBO
V = -4V
EB
Emitter cuf current
-
Collectoitter saturation voltage
VCE(sat) I / I = -5mA / -0.5mA
-
-
C
B
hFE
R1
V
CE
= -5V, I = -1mA
DC urrent gain
put resistance
100
32.9
250
47
-
C
-
kΩ
V
= -10V, I = 5mA,
E
CE
*2
fT
Transition frequency
-
250
-
MHz
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
2/7
20121023 - Rev.001
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DTA144T series
Datasheet
llElectrical characteristic curves(Ta=25℃)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Crrent
Fi.4 Collector-emitter saturation voltage vs.
Collector Current
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
3/7
20121023 - Rev.001
DTA144T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
4/7
20121023 - Rev.001
DTA144T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
5/7
20121023 - Rev.001
DTA144T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
6/7
20121023 - Rev.001
DTA144T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
7/7
20121023 - Rev.001
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