DTA143EHT2L [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN;![DTA143EHT2L](http://pdffile.icpdf.com/pdf2/p00233/img/icpdf/DTA143EHT2L_1369371_icpdf.jpg)
型号: | DTA143EHT2L |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总3页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DTA143EM / DTA143EH / DTA143EE / DTA143EUA
DTA143EKA / DTA143ESA
Transistors
Digital transistors (built-in resistors)
DTA143EM / DTA143EH / DTA143EE /
DTA143EUA / DTA143EKA / DTA143ESA
!Equivalent circuit
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
OUT
R1
IN
R2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
GND(+)
OUT
IN
3) Only the on/off conditions need to be set for operation,
making device design easy.
GND(+)
!Structure
PNP digital transistor
(with built-in resistors)
!External dimensions (Units : mm)
DTA143EM
DTA143EH
1.6
1.2
0.85
0.2 0.8 0.2
(
)
2
( )
2
(
)
1
(
)
3
(3)
( )
1
0.15Max.
Each lead has same dimensions
(1) IN
(2) GND
(3) OUT
(1) IN
(2) GND
(3) OUT
ROHM
: VMT3
ROHM
EIAJ
: EMT3 Flat lead
SC-89
Abbreviated symbol : 13
Abbreviated symbol : 13
:
2.0 0.2
1.6 0.2
1.0 0.1
DTA143EE
DTA143EUA
0.9 0.1
0.7 0.1
1.3 0.1
0.65 0.65
0.2
0.7 0.1
0.55 0.1
0.50.5
+0.1
+0.1
0.2
−0.05
(1)
(2)
0.2
−0.05
(1) (2)
0~0.1
0~0.1
(3)
(3)
(1) GND
(2) IN
(3) OUT
+0.1
−0
0.3
0.15 0.05
+0.1
0.3
(1) GND
(2) IN
ROHM
: EMT3
−0.05
0.15 0.05
All terminals have same dimensions
ROHM
EIAJ
:
UMT3
:
SC-70
(3) OUT
Abbreviated symbol : 13
Abbreviated symbol : 13
4
0.2
2 0.2
2.9 0.2
DTA143EKA
DTA143ESA
+0.2
1.1
−0.1
1.9 0.2
0.8 0.1
0.95 0.95
(2)
(1)
0~0.1
+
0.15
0.45
−
0.05
(3)
+0.1
+
−
0.15
+
0.4
0.15
0.45
2.5
(1) GND
(2) IN
(3) OUT
+0.1
0.5
0.05
−0.06
−
0.1
0.4
−0.05
5
ROHM
EIAJ
:
SMT3
(1) GND
(2) OUT
(3) IN
All terminals have same dimensions
Abbreviated symbol : 13
:
SC-59
ROHM
EIAJ
:
SPT
(1) (2) (3)
:
SC-72
DTA143EM / DTA143EH / DTA143EE / DTA143EUA
DTA143EKA / DTA143ESA
Transistors
!Absolute maximum ratings (Ta=25°C)
Limits(DTA143E
UA
)
Parameter
Symbol
Unit
M
H
E
KA
SA
Supply voltage
Input voltage
V
CC
−50
V
V
V
IN
−30~+10
−100
I
O
Output current
mA
I
C(Max.)
Pd
−100
Power dissipation
150
200
300
mW
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55~+150
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−0.5
−
Unit
Conditions
=−100µA
=−20mA
=−10mA/−0.5mA
=−5V
CC=−50V, V
V
I(off)
I(on)
−
−3
−
−
−
V
CC=−5V, I
O
Input voltage
V
V
V
O
=−0.3V, I
O
Output voltage
Input current
V
O(on)
−0.1
−
−0.3
−1.8
−0.5
−
V
mA
µA
−
I
O
/I
I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
I
=0V
G
I
20
3.29
0.8
−
−
O
=−5V, I
O
=−10mA
R1
4.7
1
6.11
1.2
−
kΩ
−
−
−
R
2/R
1
Transition frequency
f
T
250
MHz
VCE=−10V, I
E=5mA, f=100MHz
∗
∗ Transition frequency of the device
!Packaging specifications
Package
VMT3
Taping
T2L
EMT3 Flat lead
Taping
EMT3
Taping
TL
UMT3
Taping
T106
SMT3
SPT
Taping
TP
Packaging type
Code
Taping
T146
T2L
Basic ordering
unit (pieces)
8000
8000
3000
3000
3000
5000
Type
DTA143EM
DTA143EH
DTA143EE
DTA143EUA
DTA143EKA
DTA143ESA
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
DTA143EM / DTA143EH / DTA143EE / DTA143EUA
DTA143EKA / DTA143ESA
Transistors
!Electrical characteristic curves
−100
1k
−10m
−5m
VO=−0.3V
VO=−5V
V
CC=−5V
−50
500
Ta=100°C
25°C
−40°C
−2m
−1m
−
20
10
200
100
−
−500µ
Ta=100°C
25°C
−40°C
Ta=−40°C
25°C
100°C
−200µ
−5
50
−100µ
−50µ
−2
20
10
5
−1
−20µ
−500m
−10µ
−5µ
−200m
−100m
2
1
−2µ
−1µ
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
0
−0.5 −1.0 −1.5 −2.0 −2.5 −3.0
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
−1
lO/lI=20
−500m
Ta=100°C
25°C
−200m
−40°C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
相关型号:
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DTA143EKAT147
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHM
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