DTA143EHT2L [ROHM]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN;
DTA143EHT2L
型号: DTA143EHT2L
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN

开关 光电二极管 晶体管
文件: 总3页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTA143EM / DTA143EH / DTA143EE / DTA143EUA  
DTA143EKA / DTA143ESA  
Transistors  
Digital transistors (built-in resistors)  
DTA143EM / DTA143EH / DTA143EE /  
DTA143EUA / DTA143EKA / DTA143ESA  
!Equivalent circuit  
!Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
OUT  
R1  
IN  
R2  
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
GND(+)  
OUT  
IN  
3) Only the on/off conditions need to be set for operation,  
making device design easy.  
GND(+)  
!Structure  
PNP digital transistor  
(with built-in resistors)  
!External dimensions (Units : mm)  
DTA143EM  
DTA143EH  
1.6  
1.2  
0.85  
0.2 0.8 0.2  
(
)
2
( )  
2
(
)
1
(
)
3
(3)  
( )  
1
0.15Max.  
Each lead has same dimensions  
(1) IN  
(2) GND  
(3) OUT  
(1) IN  
(2) GND  
(3) OUT  
ROHM  
: VMT3  
ROHM  
EIAJ  
: EMT3 Flat lead  
SC-89  
Abbreviated symbol : 13  
Abbreviated symbol : 13  
:
2.0 0.2  
1.6 0.2  
1.0 0.1  
DTA143EE  
DTA143EUA  
0.9 0.1  
0.7 0.1  
1.3 0.1  
0.65 0.65  
0.2  
0.7 0.1  
0.55 0.1  
0.50.5  
+0.1  
+0.1  
0.2  
0.05  
(1)  
(2)  
0.2  
0.05  
(1) (2)  
0~0.1  
0~0.1  
(3)  
(3)  
(1) GND  
(2) IN  
(3) OUT  
+0.1  
0  
0.3  
0.15 0.05  
+0.1  
0.3  
(1) GND  
(2) IN  
ROHM  
: EMT3  
0.05  
0.15 0.05  
All terminals have same dimensions  
ROHM  
EIAJ  
:
UMT3  
:
SC-70  
(3) OUT  
Abbreviated symbol : 13  
Abbreviated symbol : 13  
4
0.2  
2 0.2  
2.9 0.2  
DTA143EKA  
DTA143ESA  
+0.2  
1.1  
0.1  
1.9 0.2  
0.8 0.1  
0.95 0.95  
(2)  
(1)  
0~0.1  
+
0.15  
0.45  
0.05  
(3)  
+0.1  
+
0.15  
+
0.4  
0.15  
0.45  
2.5  
(1) GND  
(2) IN  
(3) OUT  
+0.1  
0.5  
0.05  
0.06  
0.1  
0.4  
0.05  
5
ROHM  
EIAJ  
:
SMT3  
(1) GND  
(2) OUT  
(3) IN  
All terminals have same dimensions  
Abbreviated symbol : 13  
:
SC-59  
ROHM  
EIAJ  
:
SPT  
(1) (2) (3)  
:
SC-72  
DTA143EM / DTA143EH / DTA143EE / DTA143EUA  
DTA143EKA / DTA143ESA  
Transistors  
!Absolute maximum ratings (Ta=25°C)  
Limits(DTA143E  
UA  
)
Parameter  
Symbol  
Unit  
M
H
E
KA  
SA  
Supply voltage  
Input voltage  
V
CC  
50  
V
V
V
IN  
30~+10  
100  
I
O
Output current  
mA  
I
C(Max.)  
Pd  
100  
Power dissipation  
150  
200  
300  
mW  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55~+150  
°C  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
0.5  
Unit  
Conditions  
=−100µA  
=−20mA  
=−10mA/0.5mA  
=−5V  
CC=−50V, V  
V
I(off)  
I(on)  
3  
V
CC=−5V, I  
O
Input voltage  
V
V
V
O
=−0.3V, I  
O
Output voltage  
Input current  
V
O(on)  
0.1  
0.3  
1.8  
0.5  
V
mA  
µA  
I
O
/I  
I
I
I
V
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O(off)  
I
=0V  
G
I
20  
3.29  
0.8  
O
=−5V, I  
O
=−10mA  
R1  
4.7  
1
6.11  
1.2  
kΩ  
R
2/R  
1
Transition frequency  
f
T
250  
MHz  
VCE=−10V, I  
E=5mA, f=100MHz  
Transition frequency of the device  
!Packaging specifications  
Package  
VMT3  
Taping  
T2L  
EMT3 Flat lead  
Taping  
EMT3  
Taping  
TL  
UMT3  
Taping  
T106  
SMT3  
SPT  
Taping  
TP  
Packaging type  
Code  
Taping  
T146  
T2L  
Basic ordering  
unit (pieces)  
8000  
8000  
3000  
3000  
3000  
5000  
Type  
DTA143EM  
DTA143EH  
DTA143EE  
DTA143EUA  
DTA143EKA  
DTA143ESA  
DTA143EM / DTA143EH / DTA143EE / DTA143EUA  
DTA143EKA / DTA143ESA  
Transistors  
!Electrical characteristic curves  
100  
1k  
10m  
5m  
VO=−0.3V  
VO=−5V  
V
CC=−5V  
50  
500  
Ta=100°C  
25°C  
40°C  
2m  
1m  
20  
10  
200  
100  
500µ  
Ta=100°C  
25°C  
40°C  
Ta=−40°C  
25°C  
100°C  
200µ  
5  
50  
100µ  
50µ  
2  
20  
10  
5
1  
20µ  
500m  
10µ  
5µ  
200m  
100m  
2
1
2µ  
1µ  
100µ −200µ −500µ −1m 2m  
5m 10m 20m 50m100m  
0
0.5 1.0 1.5 2.0 2.5 3.0  
100µ −200µ −500µ −1m 2m  
5m 10m 20m 50m100m  
OUTPUT CURRENT : I  
O
(A)  
INPUT VOLTAGE : VI(off) (V)  
OUTPUT CURRENT : IO (A)  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
Fig.3 DC current gain vs. output  
current  
1  
lO/lI=20  
500m  
Ta=100°C  
25°C  
200m  
40°C  
100m  
50m  
20m  
10m  
5m  
2m  
1m  
100µ −200µ −500µ −1m 2m  
5m 10m 20m 50m100m  
OUTPUT CURRENT : IO (A)  
Fig.4 Output voltage vs. output  
current  

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