DTA124TSA [ROHM]

Digital transistors (built in resistor); 数字晶体管(内置电阻)
DTA124TSA
型号: DTA124TSA
厂家: ROHM    ROHM
描述:

Digital transistors (built in resistor)
数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:83K)
中文:  中文翻译
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DTA124TH / DTA124TE / DTA124TUA /  
Transistors  
DTA124TKA / DTA124TSA  
Digital transistors (built in resistor)  
DTA124TH / DTA124TE / DT124TUA /  
DTA124TKA / DTA124TSA  
!External dimensions (Units : mm)  
!Features  
1) Built-in circuit enables the configuration of an  
inverter circuit without connecting external input  
resistors.  
DTA124TH  
1.6  
0.85  
(
)
1
(
)
2
( )  
3
(see equivalent circuit).  
2) The bias resistors consist of thin-film resistors  
with complete isolation to allow positive biasing  
of the input. They also have the advantage of  
almost completely eliminating parasitic effects.  
3) Only the on / off conditions need to be set for  
operation, making device design easy.  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM  
: EMT3H  
Addreviated symbol : 95  
DTA124TE  
( )  
1
( )  
2
(
)
3
0.8  
1.6  
!Equivalent circuit  
0.1Min.  
(1) Emitter  
(2) Base  
ROHM  
: EMT3  
(3) Collector  
Addreviated symbol : 95  
DTA124TUA  
C
B
R1  
All terminals have same dimensions  
E
1.25  
2.1  
B : Base  
C : Collector  
E : Emitter  
0.1to0.4  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM  
EIAJ  
:
UMT3  
:
SC-70  
Addreviated symbol : 95  
DTA124TKA  
All terminals have same dimensions  
1.6  
2.8  
(1) Emitter  
(2) Base  
(3) Collector  
0.3to0.6  
ROHM  
EIAJ  
:
SMT3  
:
SC-59  
Addreviated symbol : 95  
DTA124TSA  
4
2
0.45  
0.45  
2.5 0.5  
5
2
(1) Emitter  
(2) Collector  
(3) Base  
ROHM  
EIAJ  
:
SPT  
( )  
1
(
)
( )  
3
:
SC-72  
DTA124TH / DTA124TE / DTA124TUA /  
Transistors  
DTA124TKA / DTA124TSA  
!Absolute maximum ratings (Ta=25°C)  
Limits(DTA124T  
)
Parameter  
Symbol  
Unit  
H
E
UA  
50  
KA  
SA  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
V
V
50  
5  
V
I
C
100  
mA  
mW  
˚C  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
150  
200  
300  
Tj  
150  
Tstg  
55~+150  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
50  
50  
5  
-
-
-
V
V
I
I
I
C
=50µA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
-
-
C
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
CBO  
-
-
-
V
E
=50µA  
CB=50V  
EB=4V  
I
0.5  
0.5  
0.3  
600  
28.6  
-
µA  
µA  
V
V
V
Emitter cutoff current  
I
EBO  
CE(sat)  
FE  
-
-
Collector-emitter saturation voltage  
DC current transfer ratio  
Input resistance  
V
-
-
I
C/I  
B
=5mA/0.5mA  
h
100  
15.4  
-
250  
22  
250  
-
V
CE=5V, I  
C
=1mA  
R1  
kΩ  
MHz  
-
Transition frequency  
f
T
V
CE=10V, IE=5mA, f=100MHz  
Transition frequency of the device  
!Packaging specifications  
Package  
Package type  
Code  
EMT3H  
Taping  
T2L  
EMT3  
Taping  
TL  
UMT3  
Taping  
T106  
SMT3  
SPT  
Taping  
TP  
Taping  
T146  
Basic ordering  
unit (pieces)  
8000  
3000  
-
3000  
3000  
5000  
Part No.  
DTA124TH  
DTA124TE  
DTA124TUA  
DTA124TKA  
DTA124TSA  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
!Electrical characteristic curves  
1k  
-1  
V
CE=5V  
IC/IB=10  
-
500m  
500  
-
200m  
100m  
200  
100  
50  
-
Ta=100˚C  
25˚C  
40˚C  
-
50m  
Ta=100˚C  
25˚C  
40˚C  
-
20m  
10m  
20  
10  
-
5
-5m  
-2m  
-1m  
2
1
-100µ -200µ -500µ -1m -2m  
-5m -10m -20m  
-50m -100m  
-10µ  
-
20µ  
-
50µ -100  
µ
-200  
µ
-500  
µ
-1m -2m -5m -10m  
(A)  
COLLECTOR URRENT : I  
C
(A)  
COLLECTOR CURRENT : IC  
Fig.1 DC current gain vs. collector current  
Fig.2 Collector-emitter saturation  
voltage vs. collector current  

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