DTA124TSA [ROHM]
Digital transistors (built in resistor); 数字晶体管(内置电阻)型号: | DTA124TSA |
厂家: | ROHM |
描述: | Digital transistors (built in resistor) |
文件: | 总2页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DTA124TH / DTA124TE / DTA124TUA /
Transistors
DTA124TKA / DTA124TSA
Digital transistors (built in resistor)
DTA124TH / DTA124TE / DT124TUA /
DTA124TKA / DTA124TSA
!External dimensions (Units : mm)
!Features
1) Built-in circuit enables the configuration of an
inverter circuit without connecting external input
resistors.
DTA124TH
1.6
0.85
(
)
1
(
)
2
( )
3
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making device design easy.
(1) Emitter
(2) Base
(3) Collector
ROHM
: EMT3H
Addreviated symbol : 95
DTA124TE
( )
1
( )
2
(
)
3
0.8
1.6
!Equivalent circuit
0.1Min.
(1) Emitter
(2) Base
ROHM
: EMT3
(3) Collector
Addreviated symbol : 95
DTA124TUA
C
B
R1
All terminals have same dimensions
E
1.25
2.1
B : Base
C : Collector
E : Emitter
0.1to0.4
(1) Emitter
(2) Base
(3) Collector
ROHM
EIAJ
:
UMT3
:
SC-70
Addreviated symbol : 95
DTA124TKA
All terminals have same dimensions
1.6
2.8
(1) Emitter
(2) Base
(3) Collector
0.3to0.6
ROHM
EIAJ
:
SMT3
:
SC-59
Addreviated symbol : 95
DTA124TSA
4
2
0.45
0.45
2.5 0.5
5
2
(1) Emitter
(2) Collector
(3) Base
ROHM
EIAJ
:
SPT
( )
1
(
)
( )
3
:
SC-72
DTA124TH / DTA124TE / DTA124TUA /
Transistors
DTA124TKA / DTA124TSA
!Absolute maximum ratings (Ta=25°C)
Limits(DTA124T
)
Parameter
Symbol
Unit
H
E
UA
−50
KA
SA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
V
V
−50
−5
V
I
C
−100
mA
mW
˚C
˚C
Collector power dissipation
Junction temperature
Storage temperature
P
C
150
200
300
Tj
150
Tstg
−55~+150
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
BVCBO
−50
−50
−5
-
-
-
V
V
I
I
I
C
=−50µA
=−1mA
Collector-emitter breakdown voltage BVCEO
-
-
C
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
CBO
-
-
-
V
E
=−50µA
CB=−50V
EB=−4V
I
−0.5
−0.5
−0.3
600
28.6
-
µA
µA
V
V
V
Emitter cutoff current
I
EBO
CE(sat)
FE
-
-
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
V
-
-
I
C/I
B
=−5mA/−0.5mA
h
100
15.4
-
250
22
250
-
V
CE=−5V, I
C
=−1mA
R1
kΩ
MHz
-
Transition frequency
f
T
V
CE=−10V, IE=5mA, f=100MHz ∗
∗ Transition frequency of the device
!Packaging specifications
Package
Package type
Code
EMT3H
Taping
T2L
EMT3
Taping
TL
UMT3
Taping
T106
SMT3
SPT
Taping
TP
Taping
T146
Basic ordering
unit (pieces)
8000
3000
-
3000
3000
5000
Part No.
DTA124TH
DTA124TE
DTA124TUA
DTA124TKA
DTA124TSA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
!Electrical characteristic curves
1k
-1
V
CE=−5V
IC/IB=10
-
500m
500
-
200m
100m
200
100
50
-
Ta=100˚C
25˚C
−40˚C
-
50m
Ta=100˚C
25˚C
−40˚C
-
20m
10m
20
10
-
5
-5m
-2m
-1m
2
1
-100µ -200µ -500µ -1m -2m
-5m -10m -20m
-50m -100m
-10µ
-
20µ
-
50µ -100
µ
-200
µ
-500
µ
-1m -2m -5m -10m
(A)
COLLECTOR URRENT : I
C
(A)
COLLECTOR CURRENT : IC
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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