BSM600D12P3G001 [ROHM]
BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成的全SiC半桥模块。适合电机驱动、逆变器、转换器、太阳能发电、风力发电及感应加热装置等用途。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC?电子基础;型号: | BSM600D12P3G001 |
厂家: | ROHM |
描述: | BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成的全SiC半桥模块。适合电机驱动、逆变器、转换器、太阳能发电、风力发电及感应加热装置等用途。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC?电子基础 电子 电机 驱动 装置 转换器 |
文件: | 总11页 (文件大小:943K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SiC Power Module
Datasheet
BSM600D12P3G001
òApplication
òCircuit diagram
ñ Motor drive
1
7
ñ Inverter, Converter
ñ Photovoltaics, wind power generation.
ñ Induction heating equipment.
9
8
3,4
òFeatures
6
5
1) Low surge, low switching loss.
2) High-speed switching possible.
3) Reduced temperature dependence.
2
10
NTC
11
òConstruction
This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM.
òDimensions & Pin layout (Unit : mm)
D1
SS1 G1
TH1 TH2
8
9
7
10 11
4
3
1
2
6
5
G2 SS2
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
1/10
BSM600D12P3G001
Datasheet
òAbsolute maximum ratings (Tj = 25°C)
Symbol
VDSS
VGSS
VGSS
VGSSsurge
ID
Parameter
Conditions
G-S short
Ratings
Unit
V
1200
22
Drain - Source Voltage
Gate - Source Voltage (+)
Gate - Source Voltage (-)
G - S Voltage (tsurge<300nsec)
D-S short
D-S short
-4
D-S short
-4 to 26
576
DC(Tc=60°C) VGS=18V
DC(Tc=50℃) VGS=18V
Pulse (Tc = 60°C) 1ms VGS=18V
DC(Tc=60°C) VGS=18V
DC(Tc=50℃) VGS=18V
DC(Tc=60°C) VGS=0V
Pulse (Tc = 60°C) 1ms VGS=18V
Pulse (Tc = 60°C) 10us VGS=0V
Tc = 25°C
ID
Drain Current Note 1)
600
IDRM
IS
1200
576
Note 2)
A
IS
600
IS
Source Current Note 1)
418
ISRM
ISRM
1200
1200
2450
175
Note 2)
Note 2)
Total Power Dissipation Note 3)
Max Junction Temperature
Junction Temperature
Storage Temperature
Isolation Voltage
Ptot
Tjmax
Tjop
W
-40 to 150
-40 to 125
2500
4.5
°C
Tstg
Visol
Terminals to baseplate f = 60Hz AC 1 min.
Main Terminals : M6 screw
Vrms
-
N ・m
Mounting Torque
Mounting to heat sink M5 screw
3.5
Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
Note 2) Repetition rate should be kept within the range where temperature rise if die should not
exceed Tjmax.
Note 3) Tj is less than 175°C.
Example of acceptable VGS waveform
<Wavelength for Switching Test>
Eon=Id×Vds
Eoff=Id×Vds
+26V
+22V
trr
t
surge
Vsurge
VDS
90%
90%
10%
10%
10%
2%
2%
2%
2%
ID
90%
10%
VGS
td(off)
td(on)
tr
tf
-4V
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
2/10
BSM600D12P3G001
Datasheet
òElectrical characteristics (Tj=25°C)
Ratings
Min. Typ. Max.
Parameter
Symbol
VDS(on)
IDSS
Conditions
ID=600A,VGS=18V
VDS=1200V,VGS=0V
VGS=0V,IS=600A
Unit
Tj=25°C
-
-
-
1.8
2.6
2.9
2.4
On-state static
Drain-Source
Voltage
Tj=125°C
Tj=150°C
-
V
4.1
-
-
4
mA
Drain Cutoff Current
Tj=25°C
-
-
-
-
-
-
2.0
2.6
2.7
1.4
1.7
1.9
2.9
-
Tj=125°C
Tj=150°C
Tj=25°C
4.6
-
Souce-Drain
Voltage
VSD
V
VGS=18V,IS=600A
VDS=10V,ID=182mA
Tj=125°C
Tj=150°C
-
-
Gate-Source
Threshold Voltage
Gate-Source
VGS(th)
IGSS
2.7
-
5.6
V
VGS=22V,VDS=0V
VGS=-6V,VDS=0V
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
61
80
µA
Leak Current
td(on)
tr
60
VGS(on)=18V、VGS(off)=-2V Note 4)
VDS=600V
70
Switching
Characteristics
trr
45
ns
ID=600A
RG(on)=1.8 ohm, RG(off)=1.8 ohm
Inductive load
td (off)
tf
320
65
VDS=10V,VGS=0V,200kHz
Tj=25°C
Ciss
RGint
R25
31
nF
Ω
Input Capacitance
Gate Registance
NTC Rated Resistance
NTC B Value
1.4
5.0
3370
10.0
16.7
16.7
12.0
11.0
-
kΩ
K
B50/25
Ls
nH
mm
mm
mm
mm
Stray Inductance
Terminal to heat sink
Terminal to terminal
-
Creepage Distance
Clearance Distance
Terminal to heat sink
-
Terminal to terminal
UMOSFET(1/2 module) Note 5)
SBD(1/2 module) Note 5)
Junction-to -Case
Thermal Resistance
Case-to -heat sink
Thermal Resistance
Rth(j-c)
Rth(c-f)
-
°C/kW
Case to heat sink, per 1 module. Thermal grease
applied. Note 6)
-
15
-
Note 4) In order to prevent self turn-on, it is recommended to apply negative gate bias.
Measurement of Tc is to be done at the point just under the chip.
Note 5)
Note 6) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K).
Note 7) SiC devices have lower short cuicuit withstand capability due to high current density.
Please be advised to pay careful attention to short cuicuit accident and try to adjust
protection time to shutdown them as short as possible.
If the Product is used beyond absolute maximum ratings defined in the Specifications,
as its internal structure may be dameged, please replace such Product with a new one.
Note 8)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
3/10
BSM600D12P3G001
Datasheet
òElectrical characteristic curves (Typical)
Fig.2 Drain source voltage characteristic
(TYP)
Fig.1 Output characteristic 25°Cꢀ(TYP)
6
5
4
3
2
1
0
1200
VGS=16V
Tj=150℃
VGS=18V
1000
VGS=14V
VGS=18V
VGS=20V
800
Tj=125℃
600
VGS=12V
Tj=25℃
400
200
VGS=10V
0
0
2
4
6
8
0
200 400 600 800 1000 1200
Drain current ID (A)
Drain source voltage VDS (V)
Fig.3 Drain source voltage characteristic
Fig.4 Ron vs Tj characteristic (TYP)
25°C (TYP)
5
8
7
VGS=12V
4
6
5
4
3
2
1
0
VGS=14V
VGS=16V
VGS=18V
3
2
1
0
Tj=25℃
VGS=20V
ID=600A
ID=500A
ID=400A
ID=300A
ID=600A
0
50
100
150
200
250
12
14
16
18
20
22
24
Gate Source Voltage VGS (V)
Junction temperature Tj (°C)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
4/10
BSM600D12P3G001
Datasheet
òElectrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
(TYP)
Fig.6 Forward characteristic of Diode
(TYP)
1000
1200
1000
800
600
400
200
0
VGS=18V
Tj=25℃
Tj=150℃
Tj=125℃
VGS=18V
100
Tj=150℃
VGS=0V
Tj=25℃
Tj=125℃
VGS=0V
2
10
0
1
2
3
4
5
0
1
3
4
5
Source drain voltage VSD (V)
Source drain voltage VSD (V)
Fig.7 Drain Current vs Gate Voltage (TYP)
1200
Fig.8 Drain Current vs Gate Voltage (TYP)
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
Tj=150℃
1000
Tj=150℃
Tj=125℃
800
VDS=20V
Tj=125℃
Tj=25℃
600
VDS=20V
400
Tj=25℃
200
0
0
5
10
15
0
5
10
15
Gate Source Voltage VGS (V)
Gate Source Voltage VGS (V)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
5/10
BSM600D12P3G001
Datasheet
òElectrical characteristic curves (Typical)
Fig.9 Switching time vs drain current at
Fig.10 Switching time vs drain current at
125°C (TYP)
25°C (TYP)
1000
100
10
1000
td(off)
tr
td(off)
tf
tf
tr
100
td(on)
td(on)
10
RG(on)=1.8Ω
VGS(on)=18V RG(off)=1.8Ω
VGS(off)=-2V
VDS=600V
RG(on)=1.8Ω
VDS=600V
VGS(on)=18V RG(off)=1.8Ω
INDUCTIVE LOAD
INDUCTIVE LOAD
VGS(off)=-2V
1
1
0
200 400 600 800 1000 1200 1400
Drain current ID (A)
0
200 400 600 800 1000 1200 1400
Drain current ID (A)
Fig.11 Switching time vs drain current at
Fig.12 Switching loss vs drain current at
150°C (TYP)
1000
25°C (TYP)
90
td(off)
VDS=600V
80
Eoff
Eon
VGS(on)=18V
VGS(off)=-2V
70
60
50
40
30
20
10
0
RG(on)=1.8Ω
RG(off)=1.8Ω
INDUCTIVE LOAD
tf
tr
100
10
1
td(on)
RG(on)=1.8Ω
VDS=600V
VGS(on)=18V RG(off)=1.8Ω
INDUCTIVE LOAD
VGS(off)=-2V
Err
0
200 400 600 800 1000 1200 1400
Drain current ID (A)
0
200 400 600 800 1000 1200 1400
Drain current ID (A)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
6/10
BSM600D12P3G001
Datasheet
òElectrical characteristic curves (Typical)
Fig.13 Switching loss vs drain current at
Fig.14 Switching loss vs drain current at
150°C (TYP)
125°C (TYP)
90
80
70
60
50
40
30
20
10
0
90
VDS=600V
Eoff
Eon
Err
VDS=600V
VGS(on)=18V
VGS(off)=-2V
RG(on)=1.8Ω
RG(off)=1.8Ω
INDUCTIVE LOAD
Eoff
80
70
60
50
40
30
20
10
0
VGS(on)=18V
VGS(off)=-2V
RG(on)=1.8Ω
RG(off)=1.8Ω
INDUCTIVE LOAD
Eon
Err
0
200 400 600 800 1000 1200 1400
Drain current ID (A)
0
200 400 600 800 1000 1200 1400
Drain current ID (A)
Fig.15 Recovery characteristic vs drain
current at 25°C (TYP)
Fig.16 Recovery characteristic vs drain
current at 125°C (TYP)
100
1000
100
1000
100
10
trr
trr
Irr
Irr
10
100
10
VDS=600V
VDS=600V
VGS(on)=18V
VGS(off)=-2V
RG=1.8Ω
VGS(on)=18V
VGS(off)=-2V
RG=1.8Ω
INDUCTIVE LOAD
INDUCTIVE LOAD
1
10
1
0
200 400 600 800 100012001400
Drain current ID (A)
0
200 400 600 800 100012001400
Drain current ID (A)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
7/10
BSM600D12P3G001
Datasheet
òElectrical characteristic curves (Typical)
Fig.17 Recovery characteristic vs drain
current at 150°C (TYP)
Fig.18 Switching time vs gate resistance
at 25°C (TYP)
10000
1000
100
100
10
1
1000
VDS=600V
ID=600A
VGS(on)=18V
VGS(off)=-2V
INDUCTIVE LOAD
trr
Irr
td(off)
100
VDS=600V
VGS(on)=18V
VGS(off)=-2V
RG=1.8Ω
tf
tr
INDUCTIVE LOAD
td(on)
10
10
0.1
1
10
0
200 400 600 800 100012001400
Drain current ID (A)
Gate resistance RG (Ω)
Fig.19 Switching time vs gate resistance
at 125°C (TYP)
Fig.20 Switching time vs gate resistance
at 150°C (TYP)
10000
10000
VDS=600V
ID=600A
VGS(on)=18V
VGS(off)=-2V
INDUCTIVE LOAD
VDS=600V
ID=600A
VGS(on)=18V
VGS(off)=-2V
INDUCTIVE LOAD
1000
100
10
1000
100
10
td(off)
td(off)
tf
tf
tr
td(on)
tr
td(on)
0.1
1
10
0.1
1
10
Gate resistance RG (Ω)
Gate resistance RG (Ω)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
8/10
BSM600D12P3G001
Datasheet
òElectrical characteristic curves (Typical)
Fig.21 Switching loss vs gate resistance
at 25°C (TYP)
100
Fig.22 Switching loss vs gate resistance
at 125°C (TYP)
100
80
60
40
20
0
VDS=600V
ID=600A
VGS(on)=18V
VGS(off)=-2V
INDUCTIVE LOAD
VDS=600V
ID=600A
VGS(on)=18V
VGS(off)=-2V
80
INDUCTIVE LOAD
Eon
60
40
20
0
Eoff
Eoff
Eon
Err
Err
0.1
1
10
0.1
1
10
Gate resistance RG (Ω)
Gate resistance RG (Ω)
Fig.23 Switching loss vs gate resistance
at 150°C (TYP)
100
VDS=600V
ID=600A
VGS(on)=18V
VGS(off)=-2V
INDUCTIVE LOAD
80
60
40
20
0
Eoff
Eon
Err
0.1
1
10
Gate resistance RG (Ω)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
9/10
BSM600D12P3G001
Datasheet
òElectrical characteristic curves (Typical)
Fig.24 Capacitance vs Drain source
Fig.25 Gate charge characteristic (TYP)
voltage (TYP)
1.E-07
25
20
15
10
5
Ciss
1.E-08
ID=600A
VDS=600V
Tj=25℃
Tj=25℃
VGS=0V
200kHz
Coss
Crss
1.E-09
1.E-10
0
-5
0.01
0.1
1
10
100
1000
0
500
1000
1500
2000
Drain source voltage VDS (V)
Gate charge QG (nC)
Fig.26 Transient thermal impedance (TYP)
1
Single Pulse
Tc=25℃
0.1
Per unit base
UMOS part : 61℃/kW
SBD part :80℃/kW
0.01
0.0001 0.001 0.01
0.1
1
10
Time (s)
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© 2019 ROHM Co., Ltd. All rights reserved.
3.Apr.2019 - Rev.001
10/10
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2012 ROHM Co., Ltd. All rights reserved.
R1107
S
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