BSM250D17P2E004 [ROHM]

BSM250D17P2E004是由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成的“全SiC”半桥模块。在高温高湿偏压试验（HV-H3TRB）中实现了超过1,000小时也不发生绝缘击穿的高可靠性。由此，在高温高湿环境下也可放心耐受1700V高压。适合以室外发电系统和充放电试验机等评估装置为代表的工业设备用电源的变频器、转换器。;


型号：	BSM250D17P2E004
厂家：	ROHM
描述：	BSM250D17P2E004是由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成的“全SiC”半桥模块。在高温高湿偏压试验（HV-H3TRB）中实现了超过1,000小时也不发生绝缘击穿的高可靠性。由此，在高温高湿环境下也可放心耐受1700V高压。适合以室外发电系统和充放电试验机等评估装置为代表的工业设备用电源的变频器、转换器。高压装置转换器
文件：	总11页 (文件大小：903K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SiC Power Module

Datasheet

BSM250D17P2E004

òApplication

òCircuit diagram

ñ Motor drive

ñ Inverter, Converter

ñ Photovoltaics, wind power generation.

ñ Induction heating equipment.

3,4

òFeatures

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

NTC

òConstruction

This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

òDimensions & Pin layout (Unit : mm)

www.rohm.com

19.Oct.2018 - Rev.001

1/10

BSM250D17P2E004

Datasheet

òAbsolute maximum ratings (T_j= 25°C)

Symbol

V_DSS

V_GSS

V_GSSsurge

I_D

Parameter

Conditions

G-S short

Ratings

Unit

1700

Drain - Source Voltage

Gate - Source Voltage (+)

Gate - Source Voltage (-)

G - S Voltage (t_surge<300nsec)

D-S short

-6

D-S short

-10 to 26

250

DC(Tc=60°C) VGS=18V

Pulse (Tc = 60°C） 1ms VGS=18V

DC(Tc=60°C) VGS=18V

DC(Tc=60°C) VGS=0V

Pulse (Tc = 60°C） 1ms VGS=18V

Tc = 25°C

Drain Current _{Note 1)}

I_DRM

I_S

500

Note 2)

250

I_S

Source Current _{Note 1)}

200

I_SRM

500

Note 2)

Total Power Dissipation _{Note 3)}

Max Junction Temperature

Junction Temperature

Storage Temperature

Isolation Voltage

Ptot

Tjmax

Tjop

1800

175

-40 to 150

-40 to 125

3400

4.5

°C

Tstg

Visol

Terminals to baseplate f = 60Hz AC 1 min.

Main Terminals : M6 screw

Vrms

N ・m

Mounting Torque

Mounting to heat sink M5 screw

3.5

Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips.

Note 2) Repetition rate should be kept within the range where temperature rise if die should not

exceed Tjmax.

Note 3) Tj is less than 175°C.

Example of acceptable VGS waveform

+26V

+22V

-6V

-10V

www.rohm.com

19.Oct.2018 - Rev.001

2/10

BSM250D17P2E004

Datasheet

òElectrical characteristics (T_j=25°C)

Ratings

Min. Typ. Max.

Parameter

Symbol

VDS(on)

IDSS

Conditions

Unit

Tj=25°C

－

2.0

3.2

3.7

2.8

On-state static

Drain-Source

Voltage

ID=250A,VGS=18V

Tj=125°C

Tj=150°C

－

5.1

VDS=1200V,VGS=0V

－

1.0

Drain Cutoff Current

Tj=25°C

－

2.3

3.2

3.5

1.5

2.0

2.2

2.7

－

VGS=0V,IS=250A

Tj=125°C

Tj=150°C

Tj=25°C

4.8

－

Souce-Drain

Voltage

VSD

VGS=18V,IS=250A

Tj=125°C

Tj=150°C

－

Gate-Source

Threshold Voltage

Gate-Source

VDS=10V,ID=66mA

VGS(th)

IGSS

1.6

－

VGS=22V,VDS=0V

VGS=-6V,VDS=0V

－

-0.5

－

0.5

－

115

µA

Leak Current

td(on)

VGS(on)=18V、VGS(off)=0V

VDS=1000V

ID=250A

RG(on)=1.0 ohm, RG(off)=0.2 ohm

Inductive load

Switching

Characteristics

trr

td (off)

195

VDS=10V,VGS=0V,200kHz

Tj=25°C

Ciss

RGint

R25

Ω

Input Capacitance

Gate Registance

NTC Rated Resistance

NTC B Value

1.4

5.0

3370

13.3

14.5

15.0

12.0

9.0

－

kΩ

B50/25

Stray Inductance

Terminal to heat sink

Terminal to terminal

Creepage Distance

Clearance Distance

Terminal to heat sink

Terminal to terminal

DMOSFET（1/2 module） Note 4)

SBD（1/2 module） Note 4)

Junction-to -Case

Thermal Resistance

Case-to -heat sink

Thermal Resistance

Rth(j-c)

Rth(c-f)

－

°C/kW

Case to heat sink, per 1 module. Thermal grease

－

applied. Note 5）

Note 4) Measurement of Tc is to be done at the

point just under the chip.

＜Wavelength for Switching Test＞

Eon=Id×Vds

Eoff=Id×Vds

trr

Note 5) Typical value is measured by using

Vsurge

thermally conductive grease of λ=0.9W/(m・K).

VDS

90%

If the Product is used beyond absolute maximum

ratings defined in the Specifications, as its

internal structure may be dameged, please

replace such Product with a new one.

Note 6)

10%

90%

10%

VGS

td(off)

td(on)

www.rohm.com

19.Oct.2018 - Rev.001

3/10

BSM250D17P2E004

Datasheet

òElectrical characteristic curves (Typical)

Fig.2 Drain source voltage characteristic

(TYP)

Fig.1 Output characteristic 25°Cꢀ(TYP)

500

VGS=16V

Tj=150℃

VGS=18V

400

VGS=14V

VGS=18V

VGS=20V

300

VGS=12V

Tj=125℃

200

Tj=25℃

VGS=10V

100

200

300

400

500

Drain source voltage VDS (V)

Drain current ID (A)

Fig.3 Drain source voltage characteristic

Fig.4 Ron vs Tj characteristic (TYP)

25°C (TYP)

VGS=12V

VGS=14V

VGS=16V

VGS=18V

Tj=25℃

VGS=20V

ID=250A

ID=200A

ID=250A

ID=150A

ID=100A

100

150

200

250

Gate source voltage VGS (V)

Junction temperature Tj (°C)

www.rohm.com

19.Oct.2018 - Rev.001

4/10

BSM250D17P2E004

Datasheet

òElectrical characteristic curves (Typical)

Fig.5 Forward characteristic of Diode

(TYP)

Fig.6 Forward characteristic of Diode

(TYP)

1000

500

400

300

200

100

VGS=18V

Tj=25℃

100

VGS=18V

Tj=150℃

Tj=125℃

VGS=0V

Tj=150℃

Tj=125℃

Tj=25℃

VGS=0V

Source drain voltage VSD (V)

Fig.7 Drain Current vs Gate Voltage (TYP)

500

Fig.8 Drain Current vs Gate Voltage (TYP)

1.0E+03

Tj=150℃

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

400

Tj=150℃

Tj=125℃

VDS=20V

300

Tj=25℃

Tj=125℃

200

VDS=20V

Tj=25℃

100

Gate Source Voltage VGS (V)

www.rohm.com

19.Oct.2018 - Rev.001

5/10

BSM250D17P2E004

Datasheet

òElectrical characteristic curves (Typical)

Fig.9 Switching time vs drain current at

Fig.10 Switching time vs drain current at

125°C (TYP)

25°C (TYP)

1000

100

1000

td(off)

td(on)

100

td(on)

VDS=1000V

VGS(on)=18V

VGS(off)=0V

RG(on)=1.0Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

VDS=1000V

VGS(on)=18V

VGS(off)=0V

RG(on)=1.0Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

200

400

600

200

400

600

Drain current ID (A)

Fig.11 Switching time vs drain current at

Fig.12 Switching loss vs drain current at

150°C (TYP)

1000

25°C (TYP)

VDS=1000V

VGS(on)=18V

VGS(off)=0V

RG(on)=1.0Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

Eon

Eoff

td(off)

100

td(on)

VDS=1000V

VGS(on)=18V

VGS(off)=0V

RG(on)=1.0Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

Err

200

400

600

200

400 600

Drain current ID (A)

www.rohm.com

19.Oct.2018 - Rev.001

6/10

BSM250D17P2E004

Datasheet

òElectrical characteristic curves (Typical)

Fig.13 Switching loss vs drain current at

Fig.14 Switching loss vs drain current at

150°C (TYP)

125°C (TYP)

VDS=1000V

VGS(on)=18V

VGS(off)=0V

RG(on)=1.0Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

VDS=1000V

Eon

VGS(on)=18V

VGS(off)=0V

RG(on)=1.0Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

Eon

Eoff

Err

200

400

600

200

400

600

Drain current ID (A)

Fig.15 Recovery characteristic vs drain

current at 25°C (TYP)

Fig.16 Recovery characteristic vs drain

current at 125°C (TYP)

1000

100

1000

100

1000

V_DS=1000V

V_GS(on)=18V

V_GS(off)=0V

R_G=1.0Ω

V_GS(on)=18V

V_GS(off)=0V

R_G=1.0Ω

INDUCTIVE LOAD

Irr

100

trr

Irr

trr

200

400

600

200

400

600

Drain current ID (A)

www.rohm.com

19.Oct.2018 - Rev.001

7/10

BSM250D17P2E004

Datasheet

òElectrical characteristic curves (Typical)

Fig.17 Recovery characteristic vs drain

current at 150°C (TYP)

Fig.18 Switching time vs gate resistance

at 25°C (TYP)

10000

1000

100

1000

100

1000

V_DS=1000V

I_D=250A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=1000V

td(off)

V_GS(on)=18V

V_GS(off)=0V

R_G=1.0Ω

Irr

trr

INDUCTIVE LOAD

100

td(on)

0.1

100

200

400

600

Drain current ID (A)

Gate resistance RG (Ω)

Fig.19 Switching time vs gate resistance

at 125°C (TYP)

Fig.20 Switching time vs gate resistance

at 150°C (TYP)

10000

V_DS=1000V

I_D=250A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=1000V

I_D=250A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

td(off)

1000

100

1000

100

td(on)

0.1

100

0.1

100

Gate resistance RG (Ω)

www.rohm.com

19.Oct.2018 - Rev.001

8/10

BSM250D17P2E004

Datasheet

òElectrical characteristic curves (Typical)

Fig.21 Switching loss vs gate resistance

at 25°C (TYP)

100

Fig.22 Switching loss vs gate resistance

at 125°C (TYP)

100

V_DS=1000V

I_D=250A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=1000V

I_D=250A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

Eon

Eoff

Eon

Eoff

Err

100

Err

0.1

100

Gate resistance RG (Ω)

Fig.23 Switching loss vs gate resistance

at 150°C (TYP)

100

Eoff

V_DS=1000V

I_D=250A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

Eon

Err

0.1

100

Gate resistance RG (Ω)

www.rohm.com

19.Oct.2018 - Rev.001

9/10

BSM250D17P2E004

Datasheet

òElectrical characteristic curves (Typical)

Fig.24 Capacitance vs Drain source

Fig.25 Gate charge characteristic (TYP)

voltage (TYP)

1.E-07

Ciss

ID=250A

V_DS=1000V

Tj=25℃

1.E-08

Tj=25℃

VGS=0V

200kHz

Coss

Crss

1.E-09

1.E-10

0.01

0.1

100

1000

500

1000

1500

2000

Drain source voltage VDS (V)

Gate charge QG (nC)

Fig.26 Transient thermal impedance (TYP)

Single Pulse

Tc=25℃

0.1

Per unit base

DMOS part : 83℃/kW

SBD part :115℃/kW

0.01

0.0001 0.001 0.01

0.1

Time (s)

www.rohm.com

19.Oct.2018 - Rev.001

10/10

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1107

BSM250D17P2E004 [ROHM]

相关型号：

BSM252F

BSM254F

BSM25GAL100D

BSM25GAL120D

BSM25GAL120DN2

BSM25GB100D

BSM25GB120D

BSM25GB120DN2

BSM25GB120DN2

BSM25GD100D

BSM25GD120D

BSM25GD120D2