BSM180D12P3C007 [ROHM]

使用罗姆公司生产SiC-UMOSFET的半桥构成SiC MOSFET模块。;
BSM180D12P3C007
型号: BSM180D12P3C007
厂家: ROHM    ROHM
描述:

使用罗姆公司生产SiC-UMOSFET的半桥构成SiC MOSFET模块。

文件: 总12页 (文件大小:1467K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SiC Power Module  
Datasheet  
BSM180D12P3C007  
Application  
Circuit diagram  
Motor drive  
1
Inverter, Converter  
10  
Photovoltaics, wind power generation.  
Induction heating equipment.  
9
8(N.C)  
3,4  
5
6
7(N.C)  
Features  
2
*Do not connnect to NC pin.  
1) Low surge, low switching loss.  
2) High-speed switching possible.  
3) Reduced temperature dependence.  
Construction  
This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM.  
Dimensions & Pin layout (Unit : mm)  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
1/10  
Datasheet  
BSM180D12P3C007  
Absolute maximum ratings (Tj = 25°C)  
Parameter  
Conditions  
Limit  
1200  
22  
Symbol  
VDSS  
Unit  
V
Drain-source voltage  
G-S short  
D-S short  
Gate-source voltage()  
Gate-source voltage()  
G - S Voltage (tsurge<300ns)  
VGSS  
4  
-4 to 26  
180  
VGSSsurge  
ID  
IDRM  
IS  
DC (Tc=60°C)  
Pulse (Tc=60°C) 1ms*2  
DC (Tc=60°C) VGS=18V  
Drain current *1  
360  
180  
A
Pulse (Tc=60°C) 1ms VGS=18V*2  
Pulse (Tc=60°C) 10s VGS=0V*2  
Tc=25°C  
Source current *1  
360  
ISRM  
360  
Total power disspation *3  
Max Junction Temperature  
Junction temperature  
880  
Ptot  
Tjmax  
Tjop  
W
175  
°C  
40 to150  
40 to125  
Storage temperature  
Tstg  
Terminals to baseplate,  
f=60Hz AC 1min.  
Isolation voltage *4  
Visol  
2500  
Vrms  
N · m  
4.5  
3.5  
Main Terminals : M6 screw  
Mounting torque  
Mounting to heat shink : M5 screw  
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.  
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax.  
(*3) Tj is less than 175°C  
Example of acceptable VGS waveform  
+26V  
t
surge  
+22V  
-4V  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
2/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristics (Tj=25°C)  
Parameter  
Conditions  
Symbol  
Min. Typ. Max.  
Unit  
V
Tj=25°C  
Tj=125°C  
Tj=150°C  
1.8  
2.7  
3.1  
-
2.6  
4
Static drain-source on-state  
voltage  
VDS(on) IC=180A, VGS=18V  
VDS=1200V, VGS=0V  
VGS=0V, IS=180A  
Drain cutoff current  
IDSS  
2
mA  
Tj=25°C  
Tj=125°C  
Tj=150°C  
Tj=25°C  
2.1  
2.6  
2.8  
1.4  
1.9  
2
2.6  
-
4.3  
VSD  
Source-drain voltage  
V
VGS=18V, IS=180A  
Tj=125°C  
Tj=150°C  
2.7  
0.5  
5.6  
0.5  
-
VDS=10V, ID=50mA  
VGS=22V, VDS=0V  
VGS= 6V, VDS=0V  
VGS(on)=18V, VGS(off)= 2V *4  
Gate-source threshold voltage VGS(th)  
-
V
IGSS  
Gate-source leakage current  
A  
td(on)  
tr  
50  
70  
VDS=600V  
ID=180A  
Switching characteristics  
trr  
ns  
35  
td(off)  
tf  
R
G(on)=8.2, RG(off)=4.7  
inductive load  
165  
50  
Input capacitance  
Gate Registance  
Stray Inductance  
VDS=10V, VGS=0V,200kHz  
Ciss  
9
nF  
nH  
-
RGint Tj=25°C  
Ls  
1.4  
25.0  
11.5  
19.0  
9.5  
13.0  
-
Terminal to heat sink  
-
mm  
mm  
mm  
mm  
Creepage Distance  
Clearance Distance  
-
Terminal to terminal  
Terminal to heat sink  
Terminal to terminal  
UMOSFET (1/2 module) *5  
SBD (1/2 module) *5  
-
-
-
-
0.17  
0.21  
Junction-to-case thermal  
resistance  
Rth(j-c)  
Rth(c-f)  
°C/W  
°C/W  
Case to heat sink, per 1 module,  
Thermal grease applied *6  
Case-to-heat sink  
Thermal resistance  
-
0.035  
-
(*4) In order to prevent self turn-on, it is recommended to apply negative gate bias.  
(*5) Measurement of Tc is to be done at the point just under the chip.  
(*6) Typical value is measured by using thermally  
conductive grease of λ=0.9W/(mK).  
(*7) SiC devices have lower short cuicuit  
withstand capability due to high current density.  
Please be advised to pay careful attention  
to short cuicuit accident and try to  
Wavelength for Switching Test>  
Eon=Id×Vds  
Eoff=Id×Vds  
trr  
Vsurge  
V
DS  
90%  
90%  
adjust protection time to shutdown them  
as short as possible.  
10%  
10%  
10%  
2%  
2%  
2%  
2%  
ID  
(*8) If the Product is used beyond absolute maximum  
ratings defined in the Specifications, as its internal  
structure may be dameged, please replace  
such Product with a new one.  
90%  
10%  
V
GS  
td(off)  
tr  
tf  
td(on)  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
3/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristic curves (Typical)  
Fig.2 Drain-Source Voltage vs. Drain Current  
Fig.1 Typical Output Characteristics [ Tj=25ºC ]  
[ Tj=25ºC ]  
8
360  
VGS=18V  
VGS=18V  
7
300  
VGS=16V  
VGS=20V  
6
5
VGS=14V  
240  
Tj=150ºC  
VGS=12V  
4
180  
Tj=125ºC  
3
120  
Tj=25ºC  
2  
VGS=10V  
60  
1
0
0
0
60  
120  
180  
240  
300  
360  
0
2
4
6
8
Drain-Source Voltage : VDS [V]  
Drain Current : ID [A]  
Fig.4 Static Drain - Source On-State Resistance  
Fig.3 Drain-Source Voltage vs.  
vs. Junction Temperature  
30  
Gate-Source Voltage [ Tj=25ºC ]  
5
Tj=25ºC  
ID=180A  
25  
20  
15  
10  
5
VGS=12V  
VGS=14V  
4
3
VGS=16V  
VGS=18V  
VGS=20V  
2
ID=180A  
ID=120A  
1
ID=90A  
ID=60A  
22  
Gate-Source Voltage : VGS [V]  
0
0
0
50  
100  
150  
200  
250  
12  
14  
16  
18  
20  
24  
Junction Temperature : Tj [ºC]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
4/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristic curves (Typical)  
Fig.6 Forward characteristic of Diode  
Fig.5 Forward characteristic of Diode  
360  
300  
240  
180  
120  
1000  
Tj=150ºC  
Tj=125ºC  
Tj=25ºC  
Tj=150ºC  
Tj=125ºC  
Tj=25ºC  
Tj=150ºC  
Tj=125ºC  
Tj=25ºC  
100  
10  
1
Tj=150ºC  
Tj=125ºC  
Tj=25ºC  
60  
VGS=0V  
VGS=18V  
VGS=0V  
VGS=18V  
0
0
1
2
3
4
0
1
2
3
4
Source-Drain Voltage : VSD [V]  
Source-Drain Voltage : VSD [V]  
Fig.8 Drain Current vs. Gate-Source Voltage  
Fig.7 Drain Current vs. Gate-Source Voltage  
1.0E+03  
360  
VDS=20V  
VDS=20V  
1.0E+02  
Tj=150ºC  
300  
Tj=150ºC  
1.0E+01  
Tj=125ºC  
240  
1.0E+00  
Tj=25ºC  
180  
Tj=125ºC  
1.0E-01  
120  
60  
0
1.0E-02  
1.0E-03  
1.0E-04  
Tj=25ºC  
0
5
10  
15  
0
5
10  
15  
Gate-Source Voltage : VGS [V]  
Gate-Source Voltage : VGS [V]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
5/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristic curves (Typical)  
Fig.10 Switching Characteristics [ Tj=125ºC ]  
Fig.9 Switching Characteristics [ Tj=25ºC ]  
1000  
100  
10  
1000  
td(off)  
tr  
td(off)  
tr  
100  
10  
1
tf  
tf  
td(on)  
td(on)  
RG(on)=8.2  
RG(off)=4.7  
VDS=600V  
GS(on)=18V  
VGS(off)= 2V  
RG(on)=8.2  
RG(off)=4.7  
INDUCTIVE  
LOAD  
VDS=600V  
GS(on)=18V  
VGS(off)= 2V  
V
V
INDUCTIVE  
LOAD  
1
0
100  
200  
300  
400  
0
100  
200  
300  
400  
Drain Current : ID [A]  
Drain Current : ID [A]  
Fig.11 Switching Characteristics [ Tj=150ºC ]  
Fig.12 Switching Loss vs. Drain Current  
[ Tj=25ºC ]  
25  
1000  
VDS=600V  
V
GS(on)=18V  
VGS(off)= 2V  
G(on)=8.2  
td(off)  
20  
15  
10  
5
Eon  
R
RG(off)=4.7  
INDUCTIVE  
LOAD  
tr  
100  
10  
1
tf  
Eoff  
td(on)  
RG(on)=8.2  
RG(off)=4.7  
INDUCTIVE  
LOAD  
VDS=600V  
GS(on)=18V  
VGS(off)= 2V  
V
Err  
0
0
100  
200  
300  
400  
0
100  
200  
300  
400  
Drain Current : ID [A]  
Drain Current : ID [A]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
6/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristic curves (Typical)  
Fig.13 Switching Loss vs. Drain Current  
Fig.14 Switching Loss vs. Drain Current  
[ Tj=125ºC ]  
[ Tj=150ºC ]  
25  
25  
VDS=600V  
VDS=600V  
V
GS(on)=18V  
VGS(off)= 2V  
G(on)=8.2  
V
GS(on)=18V  
VGS(off)= 2V  
G(on)=8.2  
Eon  
Eon  
20  
15  
10  
5
20  
15  
10  
5
R
R
RG(off)=4.7  
INDUCTIVE  
LOAD  
RG(off)=4.7  
INDUCTIVE  
LOAD  
Eoff  
Eoff  
Err  
Err  
0
0
0
100  
200  
300  
400  
0
100  
200  
300  
400  
Drain Current : ID [A]  
Drain Current : ID [A]  
Fig.15 Recovery Characteristics vs.  
Fig.16 Recovery Characteristics vs.  
Drain Current [ Tj=125ºC ]  
100  
Drain Current [ Tj=25ºC ]  
100  
10  
1
100  
100  
10  
1
trr  
trr  
Irr  
Irr  
10  
10  
VDS=600V  
VDS=600V  
V
GS(on)=18V  
V
GS(on)=18V  
VGS(off)= 2V  
RG=8.2  
INDUCTIVE  
LOAD  
VGS(off)= 2V  
RG=8.2  
INDUCTIVE  
LOAD  
1
1
0
100  
200  
300  
400  
0
100  
200  
300  
400  
Drain Current : ID [A]  
Drain Current : ID [A]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
7/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristic curves (Typical)  
Fig.18 Switching Characteristics vs. Gate  
Fig.17 Recovery Characteristics vs.  
Drain Current [ Tj=150ºC ]  
100  
Resistance [ Tj=25ºC ]  
100  
10  
1
10000  
1000  
100  
VDS=600V  
ID=180A  
VGS(on)=18V  
VGS(off)= 2V  
INDUCTIVE  
LOAD  
trr  
td(off)  
Irr  
tr  
10  
td(on)  
tf  
VDS=600V  
V
GS(on)=18V  
VGS(off)= 2V  
RG=8.2  
INDUCTIVE  
LOAD  
1
10  
0
100  
200  
300  
400  
1
10  
Gate Resistance : RG []  
100  
Drain Current : ID [A]  
Fig.19 Switching Characteristics vs. Gate  
Resistance [ Tj=125ºC ]  
Fig.20 Switching Characteristics vs. Gate  
Resistance [ Tj=150ºC ]  
10000  
10000  
VDS=600V  
ID=180A  
VDS=600V  
ID=180A  
VGS(on)=18V  
VGS(on)=18V  
VGS(off)= 2V  
VGS(off)= 2V  
INDUCTIVE  
LOAD  
INDUCTIVE  
td(off)  
td(off)  
1000  
1000  
100  
10  
LOAD  
tr  
tr  
tf  
tf  
td(on)  
100  
td(on)  
10  
1
10  
100  
1
10  
Gate Resistance : RG []  
100  
Gate Resistance : RG []  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
8/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristic curves (Typical)  
Fig.21 Switching Loss vs. Gate Resistance  
Fig.22 Switching Loss vs. Gate Resistance  
[ Tj=125ºC ]  
[ Tj=25ºC ]  
30  
30  
Eon  
VDS=600V  
ID=180A  
VDS=600V  
ID=180A  
VGS(on)=18V  
VGS(off)= 2V  
INDUCTIVE  
LOAD  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
VGS(on)=18V  
Eon  
VGS(off)= 2V  
INDUCTIVE  
LOAD  
Eoff  
Eoff  
Err  
Err  
0
0
1
10  
Gate Resistance : RG []  
100  
1
10  
Gate Resistance : RG []  
100  
Fig.23 Switching Loss vs. Gate Resistance  
Fig.24 Typical Capacitance vs. Drain-Source  
Voltage  
1.E-07  
[ Tj=150ºC ]  
30  
Tj=25ºC  
GS=0V  
200kHz  
VDS=600V  
ID=180A  
VGS(on)=18V  
VGS(off)= 2V  
INDUCTIVE  
LOAD  
V
25  
20  
15  
10  
5
Eon  
Ciss  
1.E-08  
1.E-09  
1.E-10  
Eoff  
Coss  
Crss  
100  
Drain-Source Voltage : VDS [V]  
Err  
0
1
10  
Gate Resistance : RG []  
100  
0.01  
0.1  
1
10  
1000  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
9/10  
Datasheet  
BSM180D12P3C007  
Electrical characteristic curves (Typical)  
Fig.26 Normalized Transient Thermal  
Fig.25 Gate Charge Characteristics  
Impedance  
[ Tj=25ºC ]  
1
25  
20  
15  
10  
5
0.1  
Single Pulse  
TC=25ºC  
0
Per unit base  
UMOS part : 0.17K/W  
SBD part : 0.21K/W  
VD=180A  
DS=600V  
Tj=25ºC  
-5  
-10  
V
0.01  
0.001  
0.01  
0.1  
1
10  
0
200  
400  
600  
800  
Time [s]  
Total Gate charge : Qg [C]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
20.Aug.2019 - Rev.002  
10/10  
Notice  
N o t e s  
1) The information contained herein is subject to change without notice.  
2) Before you use our Products, please contact our sales representative and verify the latest specifica-  
tions.  
3) Although ROHM is continuously working to improve product reliability and quality, semicon-  
ductors can break down and malfunction due to various factors.  
Therefore, in order to prevent personal injury or fire arising from failure, please take safety  
measures such as complying with the derating characteristics, implementing redundant and  
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no  
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by  
ROHM.  
4) Examples of application circuits, circuit constants and any other information contained herein are  
provided only to illustrate the standard usage and operations of the Products. The peripheral  
conditions must be taken into account when designing circuits for mass production.  
5) The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,  
any license to use or exercise intellectual property or other rights held by ROHM or any other  
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of  
such technical information.  
6) The Products specified in this document are not designed to be radiation tolerant.  
7) For use of our Products in applications requiring a high degree of reliability (as exemplified  
below), please contact and consult with a ROHM representative : transportation equipment (i.e.  
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety  
equipment, medical systems, and power transmission systems.  
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace  
equipment, nuclear power control systems, and submarine repeaters.  
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with  
the recommended usage conditions and specifications contained herein.  
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this  
document. However, ROHM does not warrants that such information is error-free, and ROHM  
shall have no responsibility for any damages arising from any inaccuracy or misprint of such  
information.  
11) Please use the Products in accordance with any applicable environmental laws and regulations,  
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a  
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting  
non-compliance with any applicable laws or regulations.  
12) When providing our Products and technologies contained in this document to other countries,  
you must abide by the procedures and provisions stipulated in all applicable export laws and  
regulations, including without limitation the US Export Administration Regulations and the Foreign  
Exchange and Foreign Trade Act.  
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of  
ROHM.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
R1107  
S
Daattaasshheeeett  
General Precaution  
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.  
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s  
representative.  
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

相关型号:

BSM181

SIMOPAC Module (Power module Single switch N channel Enhancement mode)
INFINEON

BSM181(C)

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 36A I(D)
ETC

BSM181/R

Power Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
INFINEON

BSM181F

SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)
INFINEON

BSM181F(C)

Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4
INFINEON

BSM181FR

Power Field-Effect Transistor, 34A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4
INFINEON

BSM181R

SIMOPAC Module (Power module Single switch N channel Enhancement mode)
INFINEON

BSM191

SIMOPAC Module (Power module Single switch N channel Enhancement mode)
INFINEON

BSM191(C)

Power Field-Effect Transistor, 28A I(D), 1000V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SIMOPAC-4
INFINEON

BSM191/F

Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
INFINEON

BSM191F

SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)
INFINEON

BSM191F(C)

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 28A I(D)
ETC