BSM180D12P3C007 [ROHM]
使用罗姆公司生产SiC-UMOSFET的半桥构成SiC MOSFET模块。;![BSM180D12P3C007](http://pdffile.icpdf.com/pdf2/p00368/img/icpdf/BSM180D12P3C_2246021_icpdf.jpg)
型号: | BSM180D12P3C007 |
厂家: | ![]() |
描述: | 使用罗姆公司生产SiC-UMOSFET的半桥构成SiC MOSFET模块。 |
文件: | 总12页 (文件大小:1467K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SiC Power Module
Datasheet
BSM180D12P3C007
Application
Circuit diagram
Motor drive
1
Inverter, Converter
10
Photovoltaics, wind power generation.
Induction heating equipment.
9
8(N.C)
3,4
5
6
7(N.C)
Features
2
*Do not connnect to NC pin.
1) Low surge, low switching loss.
2) High-speed switching possible.
3) Reduced temperature dependence.
Construction
This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
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© 2015 ROHM Co., Ltd. All rights reserved.
20.Aug.2019 - Rev.002
1/10
Datasheet
BSM180D12P3C007
Absolute maximum ratings (Tj = 25°C)
Parameter
Conditions
Limit
1200
22
Symbol
VDSS
Unit
V
Drain-source voltage
G-S short
D-S short
Gate-source voltage()
Gate-source voltage()
G - S Voltage (tsurge<300ns)
VGSS
4
-4 to 26
180
VGSSsurge
ID
IDRM
IS
DC (Tc=60°C)
Pulse (Tc=60°C) 1msꢀ*2
DC (Tc=60°C) VGS=18V
Drain current *1
360
180
A
Pulse (Tc=60°C) 1ms VGS=18Vꢀ*2
Pulse (Tc=60°C) 10s VGS=0Vꢀ*2
Tc=25°C
Source current *1
360
ISRM
360
Total power disspation *3
Max Junction Temperature
Junction temperature
880
Ptot
Tjmax
Tjop
W
175
°C
40 to150
40 to125
Storage temperature
Tstg
Terminals to baseplate,
f=60Hz AC 1min.
Isolation voltage *4
Visol
2500
Vrms
N · m
4.5
3.5
Main Terminals : M6 screw
Mounting torque
Mounting to heat shink : M5 screw
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax.
(*3) Tj is less than 175°C
Example of acceptable VGS waveform
+26V
t
surge
+22V
-4V
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© 2015 ROHM Co., Ltd. All rights reserved.
20.Aug.2019 - Rev.002
2/10
Datasheet
BSM180D12P3C007
Electrical characteristics (Tj=25°C)
Parameter
Conditions
Symbol
Min. Typ. Max.
Unit
V
Tj=25°C
Tj=125°C
Tj=150°C
1.8
2.7
3.1
-
2.6
-
4
-
-
-
-
-
Static drain-source on-state
voltage
VDS(on) IC=180A, VGS=18V
VDS=1200V, VGS=0V
VGS=0V, IS=180A
Drain cutoff current
IDSS
2
mA
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
2.1
2.6
2.8
1.4
1.9
2
2.6
-
4.3
-
-
-
VSD
Source-drain voltage
V
VGS=18V, IS=180A
Tj=125°C
Tj=150°C
-
2.7
-
0.5
-
-
-
-
-
-
5.6
0.5
-
-
-
-
-
-
-
-
VDS=10V, ID=50mA
VGS=22V, VDS=0V
VGS= 6V, VDS=0V
VGS(on)=18V, VGS(off)= 2V *4
Gate-source threshold voltage VGS(th)
-
V
-
-
IGSS
Gate-source leakage current
A
td(on)
tr
50
70
VDS=600V
ID=180A
Switching characteristics
trr
ns
35
td(off)
tf
R
G(on)=8.2, RG(off)=4.7
inductive load
165
50
Input capacitance
Gate Registance
Stray Inductance
VDS=10V, VGS=0V,200kHz
Ciss
9
nF
nH
-
-
RGint Tj=25°C
Ls
1.4
25.0
11.5
19.0
9.5
13.0
-
-
Terminal to heat sink
-
mm
mm
mm
mm
Creepage Distance
Clearance Distance
-
Terminal to terminal
Terminal to heat sink
Terminal to terminal
UMOSFET (1/2 module) *5
SBD (1/2 module) *5
-
-
-
-
0.17
0.21
-
-
Junction-to-case thermal
resistance
Rth(j-c)
Rth(c-f)
°C/W
°C/W
-
Case to heat sink, per 1 module,
Thermal grease applied *6
Case-to-heat sink
Thermal resistance
-
0.035
-
(*4) In order to prevent self turn-on, it is recommended to apply negative gate bias.
(*5) Measurement of Tc is to be done at the point just under the chip.
(*6) Typical value is measured by using thermally
conductive grease of λ=0.9W/(m・K).
(*7) SiC devices have lower short cuicuit
withstand capability due to high current density.
Please be advised to pay careful attention
to short cuicuit accident and try to
<Wavelength for Switching Test>
Eon=Id×Vds
Eoff=Id×Vds
trr
Vsurge
V
DS
90%
90%
adjust protection time to shutdown them
as short as possible.
10%
10%
10%
2%
2%
2%
2%
ID
(*8) If the Product is used beyond absolute maximum
ratings defined in the Specifications, as its internal
structure may be dameged, please replace
such Product with a new one.
90%
10%
V
GS
td(off)
tr
tf
td(on)
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© 2015 ROHM Co., Ltd. All rights reserved.
20.Aug.2019 - Rev.002
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Datasheet
BSM180D12P3C007
Electrical characteristic curves (Typical)
Fig.2 Drain-Source Voltage vs. Drain Current
Fig.1 Typical Output Characteristics [ Tj=25ºC ]
[ Tj=25ºC ]
8
360
VGS=18V
VGS=18V
7
300
VGS=16V
VGS=20V
6
5
VGS=14V
240
Tj=150ºC
VGS=12V
4
180
Tj=125ºC
3
120
Tj=25ºC
ꢀ2
VGS=10V
60
1
0
0
0
60
120
180
240
300
360
0
2
4
6
8
Drain-Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.4 Static Drain - Source On-State Resistance
Fig.3 Drain-Source Voltage vs.
vs. Junction Temperature
30
Gate-Source Voltage [ Tj=25ºC ]
5
Tj=25ºC
ID=180A
25
20
15
10
5
VGS=12V
VGS=14V
4
3
VGS=16V
VGS=18V
VGS=20V
2
ID=180A
ID=120A
1
ID=90A
ID=60A
22
Gate-Source Voltage : VGS [V]
0
0
0
50
100
150
200
250
12
14
16
18
20
24
Junction Temperature : Tj [ºC]
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Datasheet
BSM180D12P3C007
Electrical characteristic curves (Typical)
Fig.6 Forward characteristic of Diode
Fig.5 Forward characteristic of Diode
360
300
240
180
120
1000
Tj=150ºC
Tj=125ºC
Tj=25ºC
Tj=150ºC
Tj=125ºC
Tj=25ºC
Tj=150ºC
Tj=125ºC
Tj=25ºC
100
10
1
Tj=150ºC
Tj=125ºC
Tj=25ºC
ꢀ
60
VGS=0V
VGS=18V
VGS=0V
VGS=18V
0
0
1
2
3
4
0
1
2
3
4
Source-Drain Voltage : VSD [V]
Source-Drain Voltage : VSD [V]
Fig.8 Drain Current vs. Gate-Source Voltage
Fig.7 Drain Current vs. Gate-Source Voltage
1.0E+03
360
VDS=20V
VDS=20V
1.0E+02
Tj=150ºC
300
Tj=150ºC
1.0E+01
Tj=125ºC
240
1.0E+00
Tj=25ºC
180
Tj=125ºC
1.0E-01
120
60
0
1.0E-02
1.0E-03
1.0E-04
Tj=25ºC
0
5
10
15
0
5
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
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Datasheet
BSM180D12P3C007
Electrical characteristic curves (Typical)
Fig.10 Switching Characteristics [ Tj=125ºC ]
Fig.9 Switching Characteristics [ Tj=25ºC ]
1000
100
10
1000
td(off)
tr
td(off)
tr
100
10
1
tf
tf
td(on)
td(on)
RG(on)=8.2
RG(off)=4.7
VDS=600V
GS(on)=18V
VGS(off)= 2V
RG(on)=8.2
RG(off)=4.7
INDUCTIVE
LOAD
VDS=600V
GS(on)=18V
VGS(off)= 2V
V
V
INDUCTIVE
LOAD
1
0
100
200
300
400
0
100
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
Fig.11 Switching Characteristics [ Tj=150ºC ]
Fig.12 Switching Loss vs. Drain Current
[ Tj=25ºC ]
25
1000
VDS=600V
V
GS(on)=18V
VGS(off)= 2V
G(on)=8.2
td(off)
20
15
10
5
Eon
R
RG(off)=4.7
INDUCTIVE
LOAD
tr
100
10
1
tf
Eoff
td(on)
RG(on)=8.2
RG(off)=4.7
INDUCTIVE
LOAD
VDS=600V
GS(on)=18V
VGS(off)= 2V
V
Err
0
0
100
200
300
400
0
100
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
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Datasheet
BSM180D12P3C007
Electrical characteristic curves (Typical)
Fig.13 Switching Loss vs. Drain Current
Fig.14 Switching Loss vs. Drain Current
[ Tj=125ºC ]
[ Tj=150ºC ]
25
25
VDS=600V
VDS=600V
V
GS(on)=18V
VGS(off)= 2V
G(on)=8.2
V
GS(on)=18V
VGS(off)= 2V
G(on)=8.2
Eon
Eon
20
15
10
5
20
15
10
5
R
R
RG(off)=4.7
INDUCTIVE
LOAD
RG(off)=4.7
INDUCTIVE
LOAD
Eoff
Eoff
Err
Err
0
0
0
100
200
300
400
0
100
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
Fig.15 Recovery Characteristics vs.
Fig.16 Recovery Characteristics vs.
Drain Current [ Tj=125ºC ]
100
Drain Current [ Tj=25ºC ]
100
10
1
100
100
10
1
trr
trr
Irr
Irr
10
10
VDS=600V
VDS=600V
V
GS(on)=18V
V
GS(on)=18V
VGS(off)= 2V
RG=8.2
INDUCTIVE
LOAD
VGS(off)= 2V
RG=8.2
INDUCTIVE
LOAD
1
1
0
100
200
300
400
0
100
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
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Datasheet
BSM180D12P3C007
Electrical characteristic curves (Typical)
Fig.18 Switching Characteristics vs. Gate
Fig.17 Recovery Characteristics vs.
Drain Current [ Tj=150ºC ]
100
Resistance [ Tj=25ºC ]
100
10
1
10000
1000
100
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= 2V
INDUCTIVE
LOAD
trr
td(off)
Irr
tr
10
td(on)
tf
VDS=600V
V
GS(on)=18V
VGS(off)= 2V
RG=8.2
INDUCTIVE
LOAD
1
10
0
100
200
300
400
1
10
Gate Resistance : RG []
100
Drain Current : ID [A]
Fig.19 Switching Characteristics vs. Gate
Resistance [ Tj=125ºC ]
Fig.20 Switching Characteristics vs. Gate
Resistance [ Tj=150ºC ]
10000
10000
VDS=600V
ID=180A
VDS=600V
ID=180A
VGS(on)=18V
VGS(on)=18V
VGS(off)= 2V
VGS(off)= 2V
INDUCTIVE
LOAD
INDUCTIVE
td(off)
td(off)
1000
1000
100
10
LOAD
tr
tr
tf
tf
td(on)
100
td(on)
10
1
10
100
1
10
Gate Resistance : RG []
100
Gate Resistance : RG []
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Datasheet
BSM180D12P3C007
Electrical characteristic curves (Typical)
Fig.21 Switching Loss vs. Gate Resistance
Fig.22 Switching Loss vs. Gate Resistance
[ Tj=125ºC ]
[ Tj=25ºC ]
30
30
Eon
VDS=600V
ID=180A
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= 2V
INDUCTIVE
LOAD
25
20
15
10
5
25
20
15
10
5
VGS(on)=18V
Eon
VGS(off)= 2V
INDUCTIVE
LOAD
Eoff
Eoff
Err
Err
0
0
1
10
Gate Resistance : RG []
100
1
10
Gate Resistance : RG []
100
Fig.23 Switching Loss vs. Gate Resistance
Fig.24 Typical Capacitance vs. Drain-Source
Voltage
1.E-07
[ Tj=150ºC ]
30
Tj=25ºC
GS=0V
200kHz
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= 2V
INDUCTIVE
LOAD
V
25
20
15
10
5
Eon
Ciss
1.E-08
1.E-09
1.E-10
Eoff
Coss
Crss
100
Drain-Source Voltage : VDS [V]
Err
0
1
10
Gate Resistance : RG []
100
0.01
0.1
1
10
1000
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Datasheet
BSM180D12P3C007
Electrical characteristic curves (Typical)
Fig.26 Normalized Transient Thermal
Fig.25 Gate Charge Characteristics
Impedance
[ Tj=25ºC ]
1
25
20
15
10
5
0.1
Single Pulse
TC=25ºC
0
Per unit base
UMOS part : 0.17K/W
SBD part : 0.21K/W
VD=180A
DS=600V
Tj=25ºC
-5
-10
V
0.01
0.001
0.01
0.1
1
10
0
200
400
600
800
Time [s]
Total Gate charge : Qg [C]
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2012 ROHM Co., Ltd. All rights reserved.
R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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