BM92T10MWV [ROHM]
Type-C USB Power Delivery Controller;
| 型号： | BM92T10MWV |
| 厂家： | 
ROHM |
| 描述： | Type-C USB Power Delivery Controller |
| 文件： | 总31页 (文件大小：1198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Type-C USB Power Delivery Controller
BM92T10MWV
General Description
Applications
BM92T10 is a full function Type-C USB-PD controller
that supports USB Power Delivery using base-band
communication. It is compatible with USB Type-C
specification rev1.1 and USB Power Delivery
specification rev2.0.
Consumer Applications
Laptop PCs, Tablet PCs, Desktop PCs
Key Specifications
BM92T10 includes support for the PD policy engine and
communicates with an Embedded Controller or the SoC
via host interface. It supports SOP, SOP’, SOP’’ and
SOP’’’ signaling, allowing it to communicate with cable
marker ICs, support alternate modes and protocol
adapters.
VBUS Voltage Range:
Power Sink Voltage Range:
Power Source Voltage Range:
Power Consumption at Low Power: 0.4m W (Typ)
Operating Temperature Range: -30°C to +105°C
4.75V to 20V
4.75V to 20V
4.75V to 20V
Package
Features
USB Type-C Spec 1.1 compatible
W (Typ) x D (Typ) x H (Max)
UQFN40V5050A 5.00mm x 5.00mmx 1.00mm
USB PD Spec 2.0 compatible (BMC-PHY)
Two channel power path control using N-channel
MOSFET drivers with back flow prevention
Type C cable orientation detection
Built-in VCONN Switch and VCONN controller
Direct VBUS powered operation
Supports Deep-Sleep-Mode (PC Application)
Supports DFP/UFP/DRP mode.
Supports Dead Battery operation.
Supports analog audio headphone detection
SMBus Interface for Host Communication
EC-less Operation (Auto mode)
Typical Application Circuit(s)
Charger Power
VBUS
Power Supply
For Prov (5V)
HSSW
SGND
SGND
SGND
SGND
SGND
SGND
VSVR 5V
(3.3V～5.0V)
SGND
SGND
SGND
VDDIO
(1.7V～3.6V)
VDDIO
VCONN
VCONN_IN
SMDATA
SMCLK
GPIO0（VIN_EN)
GPIO1（ALERT#)
CC1
CC2
CC1
CC2
EC-I/F
GPO2/VDIV(BST_EN)
GPO3/FB(HSSWEN)
USB Type-C
Receptacle
XCLPOFF1
XCLPOFF2
BM92T10MWV
UQFN40V5050A
GPIO7(UPSCLK）
GPIO6(UPSDO）
GPIO5(UPSDIN）
GPIO4(UPSCS）
SCK
SI
SPI-IF
SO
CSB
VCCIN
DBGMODDT
DBGRSTCK
IDSEL/ATST1
VSTR/ATST2
XRST
D+
D-
To direct USB-PHY
VCCIN
RX1+/RX1-
RX2+/RX2-
SGND
To direct USB-3.x PHY
TX1+/TX1-
TX2+/TX2-
VCCIN
GND
SGND
GND
SGND
Figure A. Typical Application Circuit
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BM92T10MWV
Contents
Contents........................................................................................................................................................................................2
Notation.........................................................................................................................................................................................3
Reference ......................................................................................................................................................................................3
1
2
3
4
Introduction............................................................................................................................................................................4
Pin Description ......................................................................................................................................................................5
Pin Configuration...................................................................................................................................................................7
Package Dimensions.............................................................................................................................................................8
Electrical Characteristics......................................................................................................................................................9
Absolute Maximum Ratings .................................................................................................................................................9
Recommended Operating Conditions................................................................................................................................10
Circuit Current Characteristics ...........................................................................................................................................10
Digital Pin DC Characteristics............................................................................................................................................11
Power supply management................................................................................................................................................12
5
5.1
5.2
5.3
5.4
5.5
5.5.1
5.5.2
5.6
5.6.1
5.6.2
Outline............................................................................................................................................................................12
Electrical Characteristics ................................................................................................................................................13
CC_PHY ............................................................................................................................................................................14
Outline............................................................................................................................................................................14
Electrical Characteristics ................................................................................................................................................16
Table 5-6. CC_PHY Characteristics..............................................................................................................................................16
5.7
5.7.1
5.7.2
Voltage detection ...............................................................................................................................................................17
Outline............................................................................................................................................................................17
Electrical Characteristics ................................................................................................................................................17
Table 5-7. Voltage Detection characteristics.................................................................................................................................17
5.8
5.8.1
5.8.2
VBUS Discharge................................................................................................................................................................18
Outline............................................................................................................................................................................18
Electrical Characteristics ................................................................................................................................................18
Table 5-8. VBUS Discharge Characteristics..................................................................................................................................18
5.9
5.9.1
5.9.2
Power FET Gate Driver (SINK & SOURCE) ......................................................................................................................19
Outline............................................................................................................................................................................19
Electrical Characteristics ................................................................................................................................................19
Table 5-9. Power FET Gate Driver Characteristics .......................................................................................................................19
5.10
5.11
5.12
6
6.1
7
Power On Sequence ......................................................................................................................................................20
Power Off Sequence ......................................................................................................................................................21
I/O Equivalence Circuit...................................................................................................................................................22
Application Example ...........................................................................................................................................................25
Selection of Components Externally connected.................................................................................................................25
Function Description...........................................................................................................................................................25
Application Circuits for Different Firmware Types ...........................................................................................................25
Operational Notes................................................................................................................................................................26
8
9
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BM92T10MWV
Notation
Category
Notation
Description
Unit
V
Volt (Unit of voltage)
A
Ampere (Unit of current)
Ohm (Unit of resistance)
Farad (Unit of capacitance)
degree Celsius (Unit of Temperature)
Hertz (Unit of frequency)
second (Unit of time)
minute (Unit of time)
Ω, Ohm
F
deg., degree
Hz
s (lower case)
min
b, bit
bit (Unit of digital data)
1 byte = 8 bits
B, byte
Unit prefix
M, mega-, mebi-
M, mega-, million-
K, kilo-, kibi-
k, kilo-
220 = 1,048,576 (used with “bit” or “byte”)
106 = 1,000,000 (used with “Ω” or “Hz”)
210 = 1,024 (used with “bit” or “byte”)
103 = 1,000 (used with “Ω” or “Hz”)
10-3
m, milli-
μ, micro-
n, nano-
p, pico-
xxh, xxH
10-6
10-9
10-12
Numeric value
Hexadecimal number.
“x”: any alphanumeric of 0 to 9 or A to F.
xxb
Binary number; “b” may be omitted.
“x”: a number, 0 or 1
“_” is used as a nibble (4-bit) delimiter.
(eg. “0011_0101b” = “35h”)
Address
Data
#xxh
Address in a hexadecimal number.
“x”: any alphanumeric of 0 to 9 or A to F.
bit[n]
n-th single bit in the multi-bit data.
bit[n:m]
“H”, High
“L”, Low
“Z”, “Hi-Z”
Bit range from bit[n] to bit[m].
Signal level
High level (over VIH or VOH) of logic signal.
Low level (under VIL or VOL) of logic signal.
High impedance state of 3-state signal.
Reference
Name
Reference Document
Release Date
Publisher
USB Type-C
USB PD
“USB Type-C Specification Release 1.1”
Apr. 3, 2015
Aug. 11, 2014
USB.org
USB.org
“Power Delivery Specification Revision2.0 Version1.0”
System Management
Implementers Forum
SMBus
“System Management Bus (SMBus) Specification Version 2.0”
Aug. 3, 2000
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BM92T10MWV
1
Introduction
BM92T10 is a full function Type-C USB-PD controller that supports USB Power Delivery using base-band communication. It
is compatible with USB Type-C specification rev1.1 and USB Power Delivery specification rev2.0
BM92T10 includes the following functional blocks: Type-C Physical Layer (base-band PHY), BMC encoder / decoder,
USB-PD Protocol engine, two N-ch MOSFET switch drivers to control two MOSFETS each, OVP FET and SMBus interface
for communicating with the host controller. It requires an external embedded controller that includes Device Policy Manager
and GPIOs for Type-C USB-PD operation. BM92T10 is able to operate independently in an AC adapter or in a dead battery
condition where the embedded controller is not operational. BM92T10 includes an EEPROM, enabling code updates via the
SPI interface during prototyping phase.
BM92T10 controller comes in four variations depending on Technical Note for their circuit design. Please refer for additional
details
Figure 1-1 shows the block diagram.
CSENSEN
CSENSEP
XCLPOFF1
XCLPOFF2
CC1
SMCLK
NchFET Switch
Driver
SMDATA
VDDIO
SMbus
GPIO1
Type-C
Device Policy
Manager
Physical Layer
GPIO0
VCONN_IN
CC2
DBGMODDT
DBGRSTCK
BB PD
Physical Layer
Protocol
SPI
I/F
GPIO7
(UPSCLK)
LDO15DCAP
LDO28CAP
LDO15ACAP
EEPROM
GPIO6
(UPSDO)
Type-C USBPD
GPIO5
(UPSDIN)
Figure 1-1. Block Diagram
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BM92T10MWV
Pin Description
2
Table 2-1. Pin Description
Power
PKG
PIN
#
Pin Name
BLOCK
GND
I/O
Type
Description
Note
System
1
2
GND
I
GND
Ground
VSTR/ATST2
TEST/Debug IO
Analog
Analog TEST/ Debug Pin2
SMBus ID (device address)
selection “H”:1Ah, “L”:18h
/Debug Pin1
3
4
5
IDSEL/ATST1
XRST
TEST/Debug
Interface
I
Analog
Digital
Analog
I
VCCIN
Digital block Reset
Internal Power supply
VCCIN
USB-PD
O
(For internal use, need to
connect capacitor to GND
5V SVR INPUT and
6
VSVR
POWER
I
Power
SPDSRC_FET_SRC voltage
7
8
9
DSCHG
GND
VB
Interface
GND
IO
Analog
GND
Discharge NMOS Drain
Ground
I
I
POWER
Power
Power Source from VBUS
Refer to
Technical
Note
Refer to
Technical
Note
Refer to
Technical
Note
Refer to
Technical
Note
GPIO4
(Ext mode: UPSCS)
I/O
(O)
General purpose I/O port 4
/(Ext mode: SPI Chip Select)
10
11
12
13
Interface
Interface
Interface
Interface
Digital
Digital
Digital
Digital
VCCIN
VCCIN
VCCIN
VCCIN
GPIO5
(Ext mode: UPSDIN)
I/O
(I)
General purpose I/O port 5
/(Ext mode: SPI DATA IN)
GPIO6
(Ext mode: UPSDO)
I/O
(O)
General purpose I/O port 6
/(Ext mode: SPI DATA OUT)
GPIO7
(Ext mode: UPSCLK)
I/O
(IO)
General purpose I/O port 7
/(Ext mode: SPI CLK INPUT)
14
15
DBGRSTCK
DBGMODDT
TEST
TEST
IO
IO
Digital
Digital
VDDIO
VDDIO
Test for logic
Test for logic
Refer to
Technical
Note
Refer to
Technical
Note
General purpose I/O port 0
VIN_EN
16
17
GPIO0
GPIO1
Interface
Interface
IO
IO
Digital
Digital
VDDIO
VDDIO
General purpose I/O port 1
ALERT#
18
19
20
VDDIO
POWER
Interface
Interface
I
Power
Digital
Digital
Interface Voltage (3.3V)
SMBus Data
SMDATA
SMCLK
IO
I
VDDIO
VDDIO
SMBus Clock
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BM92T10MWV
PKG
PIN
#
Power
System
Pin Name
BLOCK
I/O
O
I
Type
Description
Note
Refer to
Technical
Note
Power Path FET Gate Control
SPDSNK_G1
FET Gate
Control
21
22
23
24
25
26
S2_DRV_G1
S2_DRV_SRC
S2_DRV_G2
S1_DRV_G1
S1_DRV_SRC
S1_DRV_G2
Analog
Analog
Analog
Analog
Analog
Analog
Power Path FET BG/SRC
Voltage
SPDSNK_SRC
Refer to
Technical
Note
FET Gate
Control
Refer to
Technical
Note
Power Path FET Gate Control
SPDSNK_G2
FET Gate
Control
O
O
I
Refer to
Technical
Note
Power Path FET Gate Control
SPDSRC_G1
FET Gate
Control
Power Path FET BG/SRC
Voltage
SPDSRC_SRC
Refer to
Technical
Note
FET Gate
Control
Refer to
Technical
Note
Power Path FET Gate Control
SPDSRC_G2
FET Gate
Control
O
27
28
GND
VEX
GND
I
I
GND
Ground
POWER
Power
Extension Power Input
O
/IO
O
/IO
Digital
/Analog
Digital
/Analog
General purpose Output port 2
BST_EN function
General purpose Output port 3
HSSWEN function
29
30
GPO2/VDIV
GPO3/FB
Interface
Interface
VCCIN
VCCIN
Current Sense Voltage Input
Negative
/ Pin 29,30 Configuration
31
32
CSENSEN
CSENSEP
CDET
CDET
I
I
Analog
Analog
VCCIN
VCCIN
*(Pin31,Pin32)=(H,H):GPO
mode, other case: Current
Sense mode.
Current Sense Voltage Input
Positive
/ Pin 29,30 Configuration
*(Pin31,Pin32)=(H,H):GPO
mode, other case: Current
Sense mode.
Disable Clamper of CC1
33
34
XCLPOFF1
XCLPOFF2
CCPHY
CCPHY
I
I
Analog
Analog
VCCIN
VCCIN
L:Dead-battery not support
Open: Dead-battery support
Disable Clamper of CC2
L:Dead-battery not support
Open: Dead-battery support
Configuration channel 1 for
Type-C
35
36
37
CC1
CCPHY
CCPHY
CCPHY
IO
I
Analog
Analog
Analog
VCONN_IN
CC2
Input power for VCONN
Configuration channel 2 for
Type-C
IO
Internal LDO 1.5V for Digital
Need Capacitor
Internal LDO 2.8V for Analog
Need Capacitor
Internal LDO 1.5V for Analog
Need Capacitor
38
39
40
LDO15DCAP
LDO28CAP
LDO15ACAP
POWER
POWER
POWER
O
O
O
Analog
Analog
Analog
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BM92T10MWV
Pin Configuration
3
30 29 28 27 26 25 24 23 22 21
CSENSEN 31
20
SMCLK
32
33
34
CSENSEP
XCLPOFF1
XCLPOFF2
CC1
19 SMDATA
18
VDDIO
17
GPIO1
16 GPIO0
BM92T10MWV
UQFN40PIN
TOP VIEW
35
36
VCONN_IN
CC2
15
14
13
12
DBGMODDT
DBGRSTCK
37
38
39
40
LDO15DCAP
LDO28CAP
LDO15ACAP
GPIO7(UPSCLK)
GPIO6(UPSDO)
11 GPIO5(UPSDIN)
1
2
3
4
5
6
7
8
9
10
Figure 3-1. Pin configuration
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BM92T10MWV
4
Package Dimensions
Ordering Information
B M 9 2 T 1 0 M W V
-
E 2
Part Number
Package
MWV:UQFN40V5050A
Packaging and forming specification
E2: Embossed tape and reel
Lot No.
M92T10
Figure 4-1. UQFN40V5050A Package Dimensions
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BM92T10MWV
5
Electrical Characteristics
5.1 Absolute Maximum Ratings
Table 5-1. Absolute Maximum Ratings
（Ta=25℃）
Parameter
Symbol
Rating
Unit
Conditions
Maximum Supply Voltage1
(VB, VEX, DSCHG, S2_DRV_G1,
S2_DRV_G2,S2_DRV_SRC,
S1_DRV_G1,S1_DRV_SRC, S1_DRV_G2 )
Maximum Supply Voltage2
(VDDIO)
Maximum Supply Voltage3
(VSVR, DBGRSTCK, DBGMODDT, GPIO0,
GPIO1, SMDATA, SMCLK, VCONN_IN)
Maximum Supply Voltage4
*1
*2
VIN1
-0.3 to +28
V
VIN2
VIN3
-0.3 to +6.0
-1.0 to+6.0
V
V
(VSTR/ATST2, IDSEL/ATST1, XRST,
VCCIN, GPIO4, GPIO5,GPIO6,GPIO7,
GPO2/VDIV, GPO3/FB, CSENSEN,
CSENSEP, XCLPOFF1, XCLPOFF2, CC1,
CC2, LDO15DCAP, LDO28CAP,
LDO15ACAP,)
VIN4
Vdiff
-0.3 to +6.0
-0.3 to +6.0
V
Maximum different Voltage
(S2_DRV_G1-S2_DRV_SRC,
S2_DRV_G2-S2_DRV_SRC,
S1_DRV_G1-S1_DRV_SRC,
S1_DRV_G2-S1_DRV_SRC)
V
Power Dissipation
Pd
2.61
W
*3
Operating Temperature Range
Topr
-30 to +105
degree *4
degree
Storage Temperature Range
Tstg
-55 to +125
*1 When the DSCHG pin is applied voltage should by way of resistance more than 120Ω (4W).
*2 The different voltage between S*DRV_G* and S*DRV_SRC is defined “Symbol Vdiff”. S*_DRV_G*=S*_DRV_SRC+5.8V (typ.)
*3 This value is the permissible loss using a ROHM specification board (74.2 x 74.2 x 1.6tmm, 4 layered board mounting).
At the time of PCB mounting the permissible loss varies with the size and material of board.
When using more than at Ta=25℃, it is reduced 26.1 mW per 1℃.（Caution）Use in excess of this value may result in damage to the device. Moreover,
normal operation is not protected.
*4 Target spec.
3
PDMAX=2.61W
2.5
θja = 38.3 ℃/W
2
1.5
1
0.5
0
0
25
50
75
100
125
150
AmbientTemperature [°C]
Figure 5-1. Power Dissipation
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BM92T10MWV
5.2 Recommended Operating Conditions
Table 5-2. Recommended Operating Conditions
(Ta=25°C)
Conditions
Item
Symbol
Range
Unit
VB, VEX Voltage
VB, VEX
4.75 ～ 20
V
*2
*2
VSVR Voltage
VDDIO Voltage
VSVR
VDDIO
VCONN
3.1 ～ 5.5
1.7 ～ 5.5
4.75 ～ 5.5
V
V
V
VCONN_IN Input Voltage
*2 target design
5.3 Circuit Current Characteristics
Table 5-3. Common Characteristics
Electrical Characteristics (Ta=25°C, VSVR=3.3V, VB=open, VEX=open, VDDIO=3.3V)
Limit
Item
Symbol
Unit
Conditions
Min
Typ
Max
[Circuit Current]
Unattached current
Idd_unatt
Idd_att
0.4
3.5
mW
mW
@VSVR=3.3V
Attached current
@VSVR=3.3V
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BM92T10MWV
5.4 Digital Pin DC Characteristics
Table5-4. Digital Pin DC Characteristics
Electrical Characteristics (Ta=25°C, VSVR=3.3V, VB=open, VEX=open, VDDIO=3.3V, VCCIN=VSVR)
Limit
Item
Symbol
Unit
Comment
Min
Typ
Max
[Digital characteristics Power: VDDIO]
(Input Digital Pins: SMCLK, DBGRSTCK) (Input/ Output Pins: GPIO0, GPIO1, SMDATA, DBGMODDT )
0.8×
VDDIO
VDDIO+0
.3
Input "H" level (SMCLK, SMDATA)
VIH1
-
V
0.2×
VDDIO
Input "L" level (SMCLK, SMDATA)
VIL1
IIC1
-0.3
-5
-
V
Input leak current (SMCLK, SMDATA)
0
5
μA
Power: VDDIO
0.8×
VDDIO
VDDIO+0
.3
Input "H" level (other Digital input)
Input "L" level (other Digital input)
VIH2
VIL2
IIC2
-
-
V
V
0.2×
VDDIO
-0.3
-1
-
Input leak current
(other Digital input)
0
-
1
μA
V
Power: VDDIO
IOL=350uA Max
Source=1mA
VIN=VDDIO
VOL
SMDATA
SMDATA pin "L" level voltage
0.4
0.3
3
Output Voltage when “L”
(other Digital output)
VOL1
-
-
V
OFF Leakage Current
(other Digital output)
IIOFF1
-3
-
μA
[Digital characteristics Power: VCCIN]
(Input Digital Pins: XRST) (Input/ Output Pins:GPIO4, GPIO5, GPIO6, GPIO7) (Output Pins: GPO2/VDIV, GPO3/FB)
0.8×
VCCIN
VCCIN+0.
3
Input "H" level (XRST,GPIOs)
Input "H" level(XRST,GPIOs)
Input "L" level (XRST,GPIOs)
Input leak current (XRST,GPIOs)
Input "H" level (other Digital input)
Input "L" level (other Digital input)
VIH3
VIH3
VIL3
IIC3
-
-
V
V
0.8×
VCCIN
VCCIN+0.
3
0.2×
VDDIO
-0.3
-5
-
V
0
-
5
μA
V
Power: VCCIN
Power: VCCIN
Source=1mA
0.8×
VDDIO
VDDIO+0
.3
VIH4
VIL4
IIC4
0.2×
VDDIO
-0.3
-1
-
V
Input leak current
(other Digital input)
0
-
1
μA
V
Output Voltage when “L”
(other Digital output)
VOL2
-
0.3
VIN=VCCIN
CSENSEP=CSENS
EN=VCCIN
OFF Leakage Current
(other Digital output)
IIOFF2
-3
-
3
μA
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BM92T10MWV
5.5 Power supply management
5.5.1 Outline
This LSI has a power selector. It select the lowest power supply voltage from VSVR, VEX, or VB for low power
consumption. Internal Power Supply (VCCIN) gives priority in order of VSVR, VEX, and VB. VCCIN supplied from the
power selector is used to LSI main power source. LDOs (for internal only) are supplied from VCCIN, and output each
internal supply voltage.
Each power supply input have UVLO (2.8Vtyp) and OVLO (VSVR: 6.4Vtyp, VEX/VB: 6.4/15.0/28.0Vtyp).And POR
(power on reset) signal is generated from detection of LDO28OK, LDO15DOK, LDO15AOK, and VCCIN.
UVLO
/OVLO
signal
UVLO/OVLO
Detection
5V
0～20V 0～20V
VSVR
VEX
VB
4.7μF
1μF
1μF
1μF
Internal
Power
Supply
VCCIN
LDO
(2.8V)
LDO28OK
LDO28CAP
LDO15DCAP
LDO15ACAP
POR
signal
POR
(2.6V)
LDO
(1.5V)
LDO15DOK
LDO15AOK
LDO
(1.5V)
Internal
Power
Supply
3.3V
VDDIO
detection
signal
VDDIO
DET
Figure 5-2. Power Supply Management Block Diagram and Timing Chart
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5.5.2 Electrical Characteristics
Table 5-5. Power Supply Management Characteristics
Limit
Typ
Item
Symbol
Unit
Comment
Min
Max
[Analog characteristics]
Unless otherwise specified
Ta=25°C, GND=0V, Bypass Capacitor(VCCIN)=4.7μF, Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF
Input Analog Pins: VSVR, VEX, VB
UVLO release voltage
UVLO detect voltage
UVLO1H
UVLO1L
OVLO5
-
-
-
-
-
2.8
2.7
6.4
15
-
-
-
-
-
V
V
V
V
V
VSVR, VEX, VB=up
VSVR, VEX, VB=down
VSVR, VEX, VB=up
VEX, VB=up
OVLO detect voltage (5V mode)
OVLO detect voltage (12V mode)
OVLO detect voltage (20V mode)
OVLO12
OVLO20
28
VEX, VB=up
OVLO hysteresis voltage (5V mode)
OVLO hysteresis voltage (12V mode)
OVLO hysteresis voltage (20V mode)
OVLO5hys
OVLO12hys
OVLO20hys
-
-
240
580
-
-
mV OVLO5-release voltage
mV OVLO12-release voltage
mV OVLO20-release voltage
-
-
-
-
-
580
2.6
2.8
1.5
1.5
-
-
-
-
-
Power ON reset threshold voltage
LDO28CAP output voltage
LDO15DCAP output voltage
LDO15ACAP output voltage
POR
V28
V15D
V15D
V
V
V
V
VCCIN=up
No Load, VSVR=5V
No Load, VSVR=5V
No Load, VSVR=5V
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5.6 CC_PHY
5.6.1 Outline
CC_PHY has below functions of USB Type-C. (Refer to USB Type-C Spec)
- Defining Port Mode
> DFP Mode Condition
> UFP Mode Condition
> DRP Mode Condition
- DFP-to-UFP Attach / Detach Detection
- Plug Orientation / Cable Twist Detection
- USB Type-C VBUS Current Detection and Usage
- VCONN (Supply for SOP’) Control
- Base-Band Power Delivery Communication (BBPD communication)
- Discovery and Configuration of Functional Extensions
VBUS
5V
[VCONNSW]
Power Switch
with OCP
VCONN_IN
VBUS_MONI
CC1
CC2
BB_PHY
(BBPD
Communication
TX/RX)
Receptacle
XCALMP1OFF
XCALMP2OFF
CC DET
(CC Terminal
Condition Monitor)
UFP-CLAMP
Rd
Rd
GND
GND
PORT_CONT
Figure 5-3. CC_PHY Block Diagram
[PORT_CONT]
This block chose the port mode according to the setting from MCU.
(DFP)
Variable current source is connected to CC terminal. These currents of each mode are 80μA±20%: Default Current,
180μA±8%: Medium Current and 330μA±8%: High Current.
(UFP)
Pull-down resistor (Rd=5.1kΩ±10%) is connected to CC terminal.
(DRP)
Changing DFP and UFP is repeated frequently.
[CC_DET]
CC_DET has functions of “Attach / Detach Detection”, “Plug Orientation / Cable Twist Detection”, “Discovery and detect
extension mode” and “USB Type-C VBUS Current Detection”.
Attach / Detach is detected with monitoring voltage of CC terminal. When the voltage of CC terminal become under a
threshold voltage at DFP, attach is detected. Oppositely, when the voltage of CC terminal become over a threshold voltage,
detach is detected. When the voltage of CC terminal become over a threshold voltage at UFP, attach is detected.
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Plug orientation and cable twist is detected from the relationship of two CC terminals. Because only one wire is connected
to Rd, the difference between two CC terminals is generated.
UFP can detect the maximum current of the power source by monitoring the voltage of CC terminal.
It is possible to detect extension mode because DFP can detect Ra at Attach / Detach detection.
[UFP_CLAMP]
1.1V Clamp is used for UFP emulation at dead-battery condition.
[VBUS_MONI]
UFP detect Attach / Detach by existence of VBUS voltage. VBUSDET detects Attach when VBUS voltage over the
threshold voltage. And it detects Detach when VBUS under the threshold voltage.
[VCONNSW]
VCONNSW is the power switch for VCONN source. It has OCP (1.3Atyp) function.
[BB_PHY]
If Type-C controller supports BBPD, CC terminal can output BBPD communication signal. (Refer to BB_PHY)
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5.6.2 Electrical Characteristics
Table 5-6. CC_PHY Characteristics
Limit
Item
Symbol
Unit
Comment
Min
Typ
Max
[PORT_CONT characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF
Input Analog Pins: CC1, CC2, VCONN_IN
Pull up current 1
Pull up current 2
Pull up current 3
Pull down resistor
CCPUP1
CCPUP2
CCPUP3
CCPDN
64
80
96
μA
μA
μA
kΩ
Ta=-30～105°C
Ta=-30～105°C
Ta=-30～105°C
Ta=-30～105°C
166
304
4.6
180
330
5.1
194
356
5.6
[UFP_CLAMP characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF Input Analog Pins: CC1, CC2, VCONN_IN
CCx terminal input impedance
CCx clamp voltage
CCZin
CCCLP
126
0.7
-
-
-
kΩ
V
1.3
Iin=80 to 330μA
[VBUS MONI]
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF Input Analog Pins: CC1, CC2, VCONN_IN
VBUS presence detection level
[VCONNSW]
CCVBDET
-
3.42
-
V
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF Input Analog Pins: CC1, CC2, VCONN_IN
VCONN_IN to CCx resistance
Overcurrent protection level
[BB_PHY]
CCVCR
CCVCOCP
-
-
-
500
-
mΩ
A
1.1
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF Input Analog Pins: CC1, CC2, VCONN_IN
TX BCM frequency
fBBTX
BBVOH
BBVOL
BBVIH
BBVIL
300
-
-
0.6
0.5
kHz
V
mV
V
TX voltage output H level
TX voltage output L level
RX voltage input H level
RX voltage input L level
1.05
0
-
1.2
75
0.65
-
0.45
V
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5.7 Voltage detection
5.7.1 Outline
VDET Block detects the voltage level of VBUS or VEX. It can detect follow conditions; (1) the voltage over the protection
level, (2) the voltage over the setting range and (3) the voltage under the setting range.
-VBUS or VEX voltage Detection for PDO of USB-PD spec.
-OVP (over voltage protection) Detection: Vnom +20%typ
-OVR (over voltage range) Detection: Vnom +5%typ
-UVR (under voltage range) Detection: Vnom -5%typ
VEX
VBUS
Voltage Selector
+
-
+
-
+
-
OVP Detection
OVR Detection
UVR Detection
Variable Reference
Voltage
Figure 5-4. Voltage Detection Block Diagram
5.7.2 Electrical Characteristics
Table 5-7. Voltage Detection characteristics
Limit
Item
Symbol
Unit
Comment
Min
Typ
Max
[VDET characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=VCCIN, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF, Vnom=5V
Input Analog Pins: VEX, VB
Over voltage protection detection rate
Over voltage range detection rate
Under voltage range detection rate
OVP
OVR
UVR
17
3
-7
20
5
-5
23
7
-3
%
%
%
Standard voltage=Vnom
Standard voltage=Vnom
Standard voltage=Vnom
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5.8 VBUS Discharge
5.8.1 Outline
NMOS switch is prepared for VBUS discharging.
VBUS Line
DSCHG
GND
discharge
control
Figure 5-5. VBUS Discharge Block Diagram
5.8.2 Electrical Characteristics
Table 5-8. VBUS Discharge Characteristics
Limit
Item
Symbol
Unit
Comment
Min
Typ
Max
[Discharge characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=VCCIN, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF
Input Analog Pins: DSCHG
Discharge Resistor
RDSCHG
-
25
-
Ω
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5.9 Power FET Gate Driver (SINK & SOURCE)
5.9.1 Outline
FET Gate Driver is the NMOS switch driver for power line switch.
- External Nch-FET gate control: S1, S2
- One of two DC input selection
OUT
OUT
OUT
OUT
IN IN
IN IN
Figure 5-6. Power FET Gate Driver Block Diagram
5.9.2 Electrical Characteristics
Table 5-9. Power FET Gate Driver Characteristics
Limit
Item
Symbol
Unit
Comment
Min
Typ
Max
[Discharge characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VEX=VB=5V, VCONN_IN=VCCIN, VDDIO=3.3V, GND=0V, Bypass Capacitor(VCCIN)=4.7μF,
Bypass Capacitors(LDO28CAP, LDO15DCAP, LDO15ACAP) =1μF
Input Analog Pins: S1_DRV_SRC, S2_DRV_SRC
Output Analog Pins: S1_DRV_G1, S1_DRV_G2, S2_DRV_G1, S2_DRV_G2
S1_DRV_G1 – S1_DRV_SRC
FET control voltage between gate
and source
S1_DRV_G2 – S1_DRV_SRC
S2_DRV_G1 – S2_DRV_SRC
S2_DRV_G2 – S2_DRV_SRC
VGS
-
6.0
-
V
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5.10 Power On Sequence
5.0V
5.0V
2.8V
VSVR
(VEX/VB)
0V
0V
2.8V
VCCIN
vccinuvlo
LDO28CAP
vref28ok
ｕｖｌｏ
2.8V
2.0V
1.5V
LDO15A/DCAP
ldo15ok
0V
H
POR
L
(HW wake up complete)
osc
RAM
Start
End
EEPROMꢀLoad
U8_EN
Figure 5-8. Power On Sequence
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5.11 Power Off Sequence
5.0V
5.0V
2.8V
VSVR
(VEX/VB)
0V
0V
2.8V
VCCIN
vccinuvlo
LDO28CAP
vref28ok
ｕｖｌｏ
2.8V
1.5V
LDO15A/DCAP
ldo15ok
0V
H
POR
L
osc
RAM
Reset
U8_EN
Figure 5-9. Power Off Sequence
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5.12 I/O Equivalence Circuit
PIN
No.
PIN Name
Equivalent circuit diagram
6
9
VSVR
VB
28
VEX
Pin
Pin
7
5
DSCHG
VCCIN
Internal
Circuit
Pin
16
17
15
14
GPIO0(VIN_EN)
GPIO1(ALERT#)
DBGMODDT
VDDIO
VCCIN
VCCIN
VDDIO
DBGRSTCK
10
11
12
13
GPIO4(UPSCS)
GPIO5(UPSDIN)
GPIO6(UPSDO)
GPIO7(UPSCLK)
VDDIO
VCCIN
Pin
Pin
GPIO4
GPIO5
GPIO6
GPIO7
29
GPO2_VDIV
Pin
30
18
GPO3_FB
Pin
VDDIO
I/O Interface
Circuit
Pin
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32
31
CSENSEP
CSENSEN
CSENSEP
Pin
CSENSEN
Pin
19
21
SMDATA
SMCLK
VDDIO
Pin
32
22
23
24
25
26
S2_DRV_G1
S2_DRV_SRC
S2_DRV_G2
S1_DRV_G1
S1_DRV_SRC
S1_DRV_G2
Pin
Sx_DRV_G1
Sx_DRV_G2
Sx_DRV_SRC
Pin
33
34
XCLPOFF1
XCLPOFF2
Pin
35
37
CC1
CC2
Pin
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36
VCONN_IN
Pin
4
XRST
VCCIN
VCCIN
Pin
38
40
LDO15DCAP
LDO15ACAP
Pin
Internal
Circuit
39
LDO28CAP
Pin
Internal
Circuit
2
3
VSTR/ATST2
IDSEL/ATST1
Pin
Pin
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Application Example
6
Q1
Q2
Charger Power
VBUS
10μF
Q3
Q4
Power Supply
For Prov (5V)
Hi-side
Switch
SGND
SGND
1μF
1μF
SGND
SGND
1μF
VSVR
(3.3V～5.0V)
1kΩ
0.01
μF
1μF
SGND
1μF
SGND
SGND
VDDIO
VDDIO
(1.7V～3.6V)
VCONN
Voltage
D1
100
kΩ
10 10 100 100
kΩ kΩ kΩ kΩ
VCONN_IN
SMDATA
SMCLK
1μF
GPIO0（VIN_EN)
GPIO1（ALERT#)
CC1
CC1
CC2
CC2
GPO2/VDIV(BST_EN)
GPO3/FB(HSSWEN)
USB Type-C
Receptacle
XCLPOFF1
XCLPOFF2
BM92T10MWV
UQFN40V5050A
GPIO7(UPSCLK）
GPIO6(UPSDO）
GPIO5(UPSDIN）
GPIO4(UPSCS）
SCK
SI
SPI-IF
SO
CSB
VCCIN
DBGMODDT
DBGRSTCK
IDSEL/ATST1
VSTR/ATST2
XRST
100 100
kΩ kΩ
0.01μF
VCCIN
100
100
SGND
kΩ
kΩ
100100100100100100100100 100
kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ
VCCIN
1μF
1μF
1μF
CVCCIN
GND
SGND
GND
SGND
6.1 Selection of Components Externally connected
Item
Symbol
Min
Typ
Max
Unit
Comment
VCCIN Capacitance(*)
Q1,Q2,Q3,Q4
Gate-Source Capacitance
CVCCIN
CQx_gs
2.2
4.7
-
10
μF
220p
0.5μ
F
(*)Please set the capacity of the condenser not to be less than the minimum in consideration of temperature properties, DC bias properties.
7
Function Description
Please refer to the Technical Note
8
Application Circuits for Different Firmware Types
Please refer to the Technical Note
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9
Operational Notes
(1) Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting
the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins.
(2) Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the digital and
analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog block. Furthermore,
connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value
when using electrolytic capacitors.
(3) Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
(4) Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected
to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large
currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground
lines must be as short and thick as possible to reduce line impedance.
(5) Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in deterioration of
the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent
exceeding the Pd rating.
(6) Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The
electrical characteristics are guaranteed under the conditions of each parameter.
(7) Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of
connections.
(8) Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
(9) Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to
stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off
completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static
discharge, ground the IC during assembly and use similar precautions during transport and storage.
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Operational Notes – continued
(10) Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging
the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be
due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge
deposited in between pins during assembly to name a few.
(11) Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely
low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way
is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So
unless otherwise specified, unused input pins should be connected to the power supply or ground line.
(12) Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N
junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor.
For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference
among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as
applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.
Figure xx. Example of monolithic IC structure
(13) Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and
the decrease in nominal capacitance due to DC bias and others.
(14) Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe Operation
(ASO).
(15) Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit
is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications
characterized by continuous operation or transitioning of the protection circuit.
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Daattaasshheeeett
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
Datasheet
Buy
BM92T10MWV - Web Page
Distribution Inventory
Part Number
Package
Unit Quantity
BM92T10MWV
UQFN40V5050A
2500
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
2500
Taping
inquiry
Yes
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