BM2P101EK-LB [ROHM]
本产品是面向工业设备市场的产品，保证可长期稳定供货。本系列作为AC/DC用PWM方式DC/DC转换器为所有产品提供优良的系统。绝缘、非绝缘均可对应，可轻松设计低功耗转换器。内置800V耐压启动电路，有助于实现低功耗。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为100kHz。轻负载时降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置800V耐压超级结MOSFET。;
| 型号： | BM2P101EK-LB |
| 厂家： | 
ROHM |
| 描述： | 本产品是面向工业设备市场的产品，保证可长期稳定供货。本系列作为AC/DC用PWM方式DC/DC转换器为所有产品提供优良的系统。绝缘、非绝缘均可对应，可轻松设计低功耗转换器。内置800V耐压启动电路，有助于实现低功耗。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为100kHz。轻负载时降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置800V耐压超级结MOSFET。 开关 转换器 |
| 文件： | 总22页 (文件大小：1314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
AC/DC Converter IC
PWM Type DC/DC Converter IC
Integrated Switching MOSFET
BM2P061EK-LB BM2P101EK-LB
General Description
Key Specification
Power Supply Voltage Operation Range:
This is the product guarantees long time support in
Industrial market. It is suitable when it is used for in
long time support.
This series IC is a PWM type DC/DC converter for
AC/DC which provides an optimum system for various
electrical products that require an electrical outlet. It
supports both Isolated and non-isolated devices,
enabling simpler design of various types of low power
consumption electrical converters.
This series also has a built-in HV starter circuit that can
withstand up to 800V, which contributes to low power
consumption. Since current mode control is utilized,
current is restricted in each cycle and excellent
performance is demonstrated in bandwidth and
transient response. Switching frequency is fixed at
65kHz or 100kHz. At light load, the switching frequency
is reduced and high efficiency is achieved. A frequency
hopping function is also built-in, which contributes to
low EMI. In addition, this product has a built-in super
junction MOSFET which has a withstand voltage of
800V.
VCC :
10.90V to 30.0V
DRAIN :
800V(Max)
Normal Operating Current:
Burst Operating Current:
PWM Frequency(1a, 1b):
Operating Temperature Range:
MOSFET ON Resistance:
1.00mA (Typ)
0.30mA (Typ)
65kHz,100kHz (Typ)
- 40°C to +105°C
1.6Ω (Typ)
Package
W(Typ) x D(Typ) x H(Max)
DIP7AK: 9.27mm×6.35mm×5.33mm pitch 2.54mm
Feature
Long Time Support Products for Industrial
Applications.
PWM Frequency: 65kHz/100kHz
PWM Current Mode Control
Frequency Hopping Function
Burst Operation at Light Load
Application
Industrial Equipment, Household Electrical Appliances,
Adapters, etc.
Frequency Reduction Function
Built-in 800V Starter Circuit
Built-in 800V Switching MOSFET
VCC Pin Under Voltage Protection
VCC Pin Over Voltage Protection
Over Current Limiter Function Per Cycle
Over Current Limiter AC Voltage Correction
Function
Soft Start Function
Brown IN/OUT Function
ZT Pin OVP Function
Typical Application Circuit
FUSE
OUT
Diode
Filter
Bridge
GND
○Product structure : Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
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Pin Configuration
TOP VIEW
Pin Description
ESD Diode
VCC GND
Pin No. Pin Name
I/O
Function
1
2
3
4
5
6
7
SOURCE
BR
I/O
MOSFET SOURCE pin
AC voltage detect pin
GND pin
Feedback signal input pin
Auxiliary winding input pin
Power supply input pin
MOSFET DRAIN pin
-
-
✔
✔
-
I
GND
FB
I/O
✔
-
I
✔
✔
✔
✔
ZT
I
I
-
VCC
DRAIN
-
I/O
-
Block Diagram
Diode
Bridge
Filter
VCC
DRAIN
BR
7
6
2
Starter
BR Comp
VCC UVLO
+
-
+
-
100µs
Filter
Internal
Regulator
100µs
Filter
+
-
128ms
Filter
Gate
Clamper
VCC OVP
ZT
5
Internal Block
ZT
OVP
100µs Filter
+
3 count Timer
-
Thermal
Protection
ZT
Comp.
+
Short
-
Protection
ZT
Blanking
Time
Super
Junction
MOSFET
NOUT
OLP
PWM
Control
NOUT
64ms
/512ms
Timer
+
-
S
Q
R
DRIVER
NOUT
Burst
Comparator
-
+
Dynamic Current
Logic
&
Timer
Limitter
+
PWM
Comparator
-
-
+
Reference
Voltage
Internal
Regulator
4.0V
SOURCE
LEB
Time
1
OCP
Compensation
OCP
+
-
+
-
FB
Reference
Voltage
Ref
Timer
4
1/4
MAX
DUTY
Soft Start
Frequency
Hopping
OSC
3
GND
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Description of Blocks
1. Starter Circuit (DRAIN: 7pin)
This IC enables low standby electric power and high-speed startup because it has a built-in start circuit (800V tolerance).
The current consumption after startup is only OFF current ISTART3 (Typ=10µA).
VH
Start Up Current[A]
DRAIN
I
START2
Starter
VCC
Cvcc
+
I
START1
START3
-
VCCUVLO
I
V
CC[V]
V
UVLO1
Vsc
Figure 1. Start circuit block diagram
Figure 2. Start up current vs. VCC voltage
2. Start Sequence (start-up operation, light load operation, over load protection function)
Start sequence is shown in Figure 3. See the sections below for detailed descriptions.
VH
(Input Voltage)
VBR1
BR
VUVLO1
Under
tFOLP1
VCC
FB
tFOLP2
tFOLP1
VFOLP1
Output
Voltage
Over
Load
Normal
Load
Light
Load
Output
Current
Burst mode
Switching
Soft
Start
A
B C
D
E
F
G
H
I
Figure 3. Start sequences timing chart
A: Input voltage VH is applied to the IC. As VH voltage is applied, the BR pin voltage becomes higher than
VBR1(Typ=0.7V).
B: When the VCC pin voltage exceeds VUVLO1 (Typ=15.5V), the IC starts to operate. When the IC judges the other
protection functions as normal condition, switching operation starts. Until the secondary output voltage becomes
constant from start-up, the VCC pin voltage drops by the VCC pin consumption current. When the VCC pin voltage
becomes less than VCHG1 (Typ=10.7V), VCC charge operation starts.
C: Switching operation starts with the soft start function, over current limit value is restricted to prevent any excessive
rise in voltage or current. Output voltage will be set to rated voltage within the tFOLP1(Typ=64ms).
D: Once the output voltage is stable, VCC voltage also is stable.
E: When the FB pin voltage becomes lower than VBST1 (Typ=0.40V) at light load, the IC starts burst operation to reduce
the power consumption.
F: When FB pin voltage becomes higher than VFOLP1 (Typ=3.4V), overload protection function operates.
G When FB pin voltage stays at VFOLP1 (Typ=3.4V) for tFOLP1 (Typ=64ms) or more, switching stops. When FB pin
voltage becomes less than VFOLP2 (Typ=3.2V), the IC’s FB OLP timer is reset.
H: Continued for tFOLP2 (Typ=512ms), IC starts switching again.
I: Same as D.
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Description of Blocks – continued
3. VCC Pin Protection Function
This IC has the internal protection functions at the VCC pin.
1) Under voltage protection function UVLO (Under Voltage Lockout)
2) Over voltage protection function VCC OVP (Over Voltage Protection)
3) VCC charge function
VCC charge function charges VCC pin from the high voltage line through a built-in starter circuit.
(1) VCC UVLO / VCC OVP Function
VCC UVLO function and VCC OVP function are auto recovery type comparators with voltage hysteresis. Switching is
stopped by the VCC OVP function when VCC pin voltage > VOVP1 (Typ=32.0V), and restarts when VCC pin voltage <
VOVP2 (Typ=24.0V)
VH
(Input Voltage)
VOVP1
VOVP2
VUVLO1
VCHG2
VCC
VCHG1
VUVLO2
Time
ON
ON
OFF
VCC UVLO
VCC OVP
ON
OFF
OFF
ON
ON
ON
VCC Charge
Function
OFF
OFF
ON
ON
OFF
OFF
Switching
OFF
Time
A
B C
D
F
I
J
A
E
G
H
Figure 4. VCC UVLO / VCC OVP / VCC Charge Function timing chart
A: VCC pin voltage rises.
B: When VCC pin voltage is more than VUVLO1(Typ=15.5V), the VCC UVLO function is released and DC/DC
operation starts.
C: When VCC pin voltage is less than VCHG1(Typ=10.7V), VCC charge function operates and VCC voltage
rises.
D: When VCC pin voltage is more than VCHG2(Typ=15.0V), VCC charge function stops.
E: When VCC pin voltage is more than VOVP1(Typ=32.0V) switching continues for tCOMP1 (Typ=100μs), After that,
switching is stopped by the VCCOVP function.
F: When VCC pin voltage becomes less than VOVP2(Typ=24.0V), switching operation restarts.
G: VCC voltage drops.
H: The same as C.
I: The same as D.
J: When input voltage “VH” drops and VCC pin voltage becomes less than VUVLO2(Typ=10.2V), switching
operation is stopped by the VCC UVLO function.
(2) VCC Charge Function
The IC starts to operate when the VCC pin voltage becomes more than VUVLO1(Typ=15.5V). After that, VCC charge
function operates when the VCC pin voltage becomes less than VCHG1(Typ=10.7V). During this time, the VCC pin is
charged from the DRAIN pin through starter circuit. By this operation, failure at start up is prevented. Once the VCC
charge function resumes, it continues charge operation until VCC voltage > VCHG2(Typ=15.0V), after which the charge
function stops.
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Description of Blocks – continued
4. DC/DC Driver(PWM Comparator, Frequency Hopping, Slope Compensate, OSC, Burst)
This IC uses current mode PWM control. The internal oscillator sets the switching frequency at a fixed value when FB
voltage > VDLT1(Typ=1.25V).It also has a built-in switching frequency hopping function. Max duty cycle is fixed at 75%
(Typ) and Minimum pulse width is fixed at 500 ns (Typ).With current mode control, when the duty cycle exceeds 50%,
sub harmonic oscillation may occur. As a countermeasure, IC has built-in slope compensation function. IC it also has a
built-in burst mode circuit and frequency reduction circuit to achieve lower power consumption in light load. FB pin is
pulled up by RFB (Typ=30kΩ) to an internal regulator. The FB pin voltage varies with secondary output voltage
(secondary power).Burst mode operation and frequency reduction operate by monitoring FB pin voltage.
(1) Frequency Reduction Circuit
Figure 5 shows the relationships of switching frequency to FB voltage, and DC/DC operation modes.
mode1: Burst voltage has hysteresis. Switching stops when FB voltage < VBST1(Typ=0.4V), and resumes when FB
voltage > VBST2(Typ=0.45V).
mode2: When FB voltage<VDLT2(Typ=0.65V), switching frequency is at fSW2(Typ=25kHz or 27kHz).At VDLT2 < FB
voltage < VDLT1, switching frequency changes within the range of fSW1 to fSW2
.
mode3: Fixed frequency(Typ=65kHz or 100kHz) operation
mode4: IC detects OLP within a period of tFOLP1(Typ=64ms), and stops switching operation for tFOLP2(Typ=512ms).
mode2
mode2
mode1
mode3
mode4
mode1
mode3
mode4
100kHz
65kHz
27kHz
25kHz
Pulse OFF
Pulse OFF
FB
voltage[V]
0.40V 0.65V
1.25V
3.40V
0.40V
0.65V
1.25V
3.40V
FB
voltage[V]
Figure 5a. Switching frequency(BM2P061EK-LB)
Figure 5b. Switching frequency(BM2P101EK-LB)
(2) Frequency Hopping Function
Frequency hopping function achieves low EMI by changing the frequency at random. The pulse width changes by
+-6% for fundamental frequency.
(3) Over Current Limiter
This IC has built-in over current limiter per cycle. When SOURCE pin voltage exceeds OCP voltage VCSa(Typ=0.4V)
or VCSb(Typ=0.3V) for 1 pulse, switching is turned off after passing internal delay time. The delay time varies in
relation to the time by which SOURCE voltage reaches VCSa(Typ=0.4V). During this time, AC voltage correction
function operates. The relation of the time by which SOURCE voltage reaches VCSa(Typ=0.4V) and the additional
delay time are below.
Figure 6a. Over current limiter delay time (BM2P061EK-LB) Figure 6b. Over current limiter delay time (BM2P101EK-LB)
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Over Current Limiter – continued
Ip is calculated by the following expression:
퐼푝 = 푉푖푛 × 푡표ꢁ + 푡푑 + 푡푑푒푙푎푦
(
)
퐿ꢀ
Vin is AC input voltage
Lp is Primary inductance
ton is Vcs=time from 0V to VCSa or VCSb
td is Additional delay time introduced by IC (Refer to Figure 6)
tdelay is IC inherent delay time (Typ=0.2μs)
(4) Dynamic over current limiter
This IC has a built-in dynamic over current limiter circuit. When SOURCE voltage exceeds VDCS(Typ=1.0V) for two
consecutive times, it stops switching operation for tDCS (Typ=128μs)
Dynamic
2 Count
Current Limitter
V
DCS
2
1
SOURCE
Voltage
t
DCS
DC/DC ON
DC/DC
DC/DC OFF
Figure 7. State transition of switching frequency
(5) Soft start Function
This function controls the over current limiter value in order to prevent any excessive rise in voltage or current upon
start up. Figure 8 shows the details of soft start function. The IC implements soft start function by changing the over
current limiter value with time.
SOURCE Voltage[V]
VCS
VDCS
VDCS
VDCS x 0.75
VDCS x 0.50
VCS
VDCS x 0.25
VCS x 0.75
VCS x 0.50
VCS x 0.25
8.0
4.0
2.0
Time [ms]
Figure 8. Soft start operation
(6) L.E.B. time.
When MOSFET is turned ON, surge current occurs capacitive elements and MOSFET drive. During this time, there is
a probability of detection error in the over current limiter circuit due to a rise in SOURCE voltage. To prevent false
reduction, there is a built-in L.E.B function (Leading Edge Blanking function) to mask the SOURCE voltage for tLEB
(Typ=250ns) after turn ON.
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Description of Blocks – continued
5. SOURCE pin short protection.
When the SOURCE pin is shorted to ground, IC may overheat and get destroyed. To prevent destruction, IC has a
built-in short protection function. SOURCE pin short protection operates when SOURCE voltage <VCSSHT(Typ=0.06V)
within a period of tCSSHT(Typ=2.0µs).
6. Output over load protection function (FB OLP Comparator)
Output over load protection function monitors the load condition and stops switching operation when overload condition
is detected. IC detects FB OLP at FB voltage>VFOLP1 (Typ=3.4V) and releases FB OLP at FB voltage <VFOLP2(Typ=3.2V).
As output voltage decreases during over load condition, and if power dissipation is more than the limits of the IC for
tFOLP1 (Typ=64ms), over loaded condition is detected and switching operation stops. FB OLP detection will be released
after the auto-recovery period tFOLP2 (Typ=512ms).
7. Temperature protection circuit
Temperature protection circuit will stop the switching operation of DC/DC when operating temperature reaches TSD1
(Typ=175°C).If the IC is operated above the Maximum Junction Temperature, temperature protection circuit is not
guaranteed to protect the IC from destruction. Always design not to operate exceeding Maximum Junction Temperature.
8. Input voltage protection function(Brown IN/OUT)
This IC has a built-in UVLO function monitor input voltage through the BR pin. This prevents the IC from heating by
over-current when input voltage is low. When this UVLO function is released, IC operates by soft start.BR pin capacitor
must be connected to prevent malfunction.
Example) If BR UVLO is released when input voltage is 130Vac.
130푉× 2×푅
√
퐵ꢂꢃ
= ꢆꢇ푅1
푅
ꢅ푅
퐵ꢂꢃ
퐵ꢂꢄ
When RBR1 is set to 1.23MΩ, RBR2 is calculated to 4.7kΩ. Then, BR UVLO voltage is calculated as:
(푅 ꢅ푅 )×푉
퐵ꢂꢄ
퐵ꢂꢃ
퐵ꢂꢃ
= 7ꢈ [Vac]
푅
× 2
√
퐵ꢂꢃ
Therefore, the hysteresis is 59Vac.
FUSE
OUT
Diode
Bridge
Filter
R
BR1
BR2
R
GND
Figure 9. Brown IN/OUT circuit example.
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Description of Blocks – continued
9. ZT Pin Over Voltage Protection.
ZT OVP has 2 protection functions(Pulse detection and DC detection), both operating by latch protection.
Pulse detection) After ZT pin voltage>VZTOVP(Typ=3.5V) for 3 consecutive switching times and continues for
tZTOVP(Typ=100µs), IC detects ZT OVP.
ON
Inner Gate
OFF
1 count
2 count
3 count
VZTOVP
ZT
tZTOVP
LATCH
Function
A
B
C
D
E
Figure 10. ZT pin over voltage protection (Pulse detection)
A: ZT pin voltage< VZTOVP(Typ=3.5V) normal operation
B: ZT pin voltage>VZTOVP(Typ=3.5V) 1pulse OVP detection
C: ZT pin voltage>VZTOVP(Typ=3.5V) 2pulses OVP detection
D: ZT pin voltage>VZTOVP(Typ=3.5V) 3pulses OVP detection. Then internal timer starts to operate.
E: The status of D continues for TZTOVP(Typ=100µs) from D, IC stops by latch.
DC detection) When ZT voltage >VZTOVP(Typ=3.5V) status continues for tZTOVP (Typ=100µs), IC detects ZT OVP.
Less than
tZTOVP
tZTOVP
VZTOVP
PULSE
ON
PULSE
ZT
Switching
A B
C
D
Figure 11. ZT pin over voltage protect (DC detection)
A: ZT pin voltage > VZTOVP(Typ=3.5V)
B: ZT pin voltage > VZTOVP (Typ=3.5V) status is less than tZTOVP(Typ=100µs)period, DC/DC returns to normal
operations.
C: ZT pin voltage > VZTOVP(Typ=3.5V)
D: ZT pin voltage > VZTOVP(Typ=3.5V) status continues for tZTOVP(Typ=100µs), latching occurs and DC/DC is turned
OFF.
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Description of Blocks – continued
10. ZT Trigger Mask Function
When switching is set ON / OFF, the superposition of noise may occur at ZT pin. During this time, the ZTOVP
comparator is masked for the duration of tZTMASK (Typ=0.60µs) to prevent false detection of the ZT comparator.
ON
DC/DC
OFF
DRAIN
ZT
ZT mask
Function
tZTMASK
tZTMASK
A
B C
D
E
F
G
Figure 12. ZT Trigger Mask Function
A: DC/DC OFF → ON
B: DC/DC ON → OFF
C: Noise occurs at the ZT pin, and ZT comparator is masked for tZTMASK (Typ=0.60µs).
D: Same as A.
E: Same as B
F: Same as C
G: Same as A
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Absolute Maximum Ratings (Ta=25°C)
Parameter
Maximum Applied Voltage 1
Maximum Applied Voltage 2
Maximum Applied Voltage 3
DRAIN Current (DC)
Symbol
VMAX1
VMAX2
VMAX3
IDD1
Rating
-0.3 to +800
-0.3 to +35.0
-0.3 to +6.5
5.0
Unit
V
V
V
A
Conditions
DRAIN
VCC
BR, FB, SOURCE, ZT
DRAIN Current(Pulse)
IDD2
20.0
A
PW=10μs, Duty cycle=1%
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Pd
Tjmax
Tstg
1.00
+150
-55 to +150
W
°C
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB boards with power dissipation taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
(Note 1) Reduce by 8mW/°C when operating Ta = 25°C or more when mounted on 70 mm × 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate.
Thermal Loss
The thermal design should set operation for the following conditions.
1. The ambient temperature Ta must be 105 °C or less.
2. The IC’s loss must be within the power dissipation Pd.
The thermal reduction characteristics are as follows.
(PCB: 70mm×70mm×1.6mm mounted on glass epoxy substrate)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
Figure 13. Thermal Reduction Characteristics
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Recommended Operating Condition
Min
Typ
Max
Parameter
Symbol
VDRAIN
VCC
Unit
V
V
Conditions
Power Supply Voltage Range 1
Power Supply Voltage Range 2
Operating Temperature
DRAIN
-
-
800
30.0
+105
10.90
-40
15.0
+25
VCC (Note 2)
Surrounding Temperature
Topr
°C
(Note 2) VCC recharge function operates in the VCC voltage range of less than 10.7V (Refer to P-7 [3-2] VCC charge function)
Recommended External Component Condition
Parameter
BR Pin Capacitor
Symbol
CBR
Recommended
0.01μF or more
Unit
μF
Conditions
Electrical Characteristics in MOSFET Part (Unless otherwise noted, Ta=25°C VCC=15V)
Specifications
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
DRAIN to SOURCE Voltage
DRAIN Leak Current
ON Resistance
VDDS
IDSS
RDS(ON)
800
-
-
-
0
1.60
-
V
μA
Ω
ID=1mA , VGS=0V
VDS=800V , VGS=0V
ID=0.25A , VGS=10V
100
2.15
Electrical Characteristics in Starter Circuit Part (Unless otherwise noted, Ta=25°C VCC=15V)
Specifications
Parameter
Symbol
Unit
Conditions
Min
0.100
3.00
-
Typ
0.300
5.50
10
Max
0.600
8.50
20
Start Current 1
Start Current 2
OFF Current
Start Current Switching Voltage
ISTART1
ISTART2
ISTART3
VSC
mA
mA
μA
V
VCC= 0V
VCC=10V
0.400
0.800
1.200
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Electrical Characteristics in Control IC Part (Unless otherwise noted, Ta=25°C VCC=15V)
Specifications
Parameter
[Circuit Current]
Symbol
Unit
Conditions
Min
Typ
Max
Pulse Operation(VFB=2.0V)
Drain = OPEN
Circuit Current (ON)1
Circuit Current (ON)2
ION1
ION2
-
1000
300
1800
450
μA
μA
150
Burst Operation (VFB =0.3V)
[VCC Pin Protection Function]
VCC UVLO Voltage1
VCC UVLO Voltage2
VCC UVLO Hysteresis
VCC OVP Voltage1
VUVLO1
VUVLO2
VUVLO3
VOVP1
V
V
V
V
V
V
VCC rise
14.50
9.50
-
30.0
-
-
50
-
15.50
10.20
5.30
32.0
24.0
8.0
100
VUVLO2-0.5
10.70
15.00
16.50
10.90
-
34.0
-
VCC fall
VUVLO3 = VUVLO1 - VUVLO2
VCC rise
VCC OVP Voltage2
VOVP2
VCC fall
VCC OVP Hysteresis
VCC OVP Timer
Latch Release VCC Voltage
VCC charge Start Voltage
VCC charge Stop Voltage
VOVP3
tCOMP1
VLATCH
VCHG1
VCHG2
-
150
-
11.70
16.00
μs
V
V
9.70
14.00
V
Over Temperature Protection 1
TSD1
TSD2
150
175
100
75
200
C
C
C
μs
Control block’s Tj rise
Control block’s Tj fall
(Note 3)
Over Temperature Protection 2
(Note 3)
-
-
-
-
Over Temperature Protection
Hysteresis
Over Temperature Protection
Timer
TSD3
tCOMP2
50
100
150
[PWM Type DC/DC Driver Block]
PWM Frequency1a
PWM Frequency2a
Frequency Hopping width1a
PWM Frequency1b
PWM Frequency2b
Frequency Hopping Width1b
Minimum Pulse Width
Soft Start Time1
Soft Start Time 2
Soft Start Time3
Maximum Duty
FB Pin Pull-up Resistor
FB / CS Gain
fSW1a
fSW2a
fDEL1a
fSW1b
fSW2b
fDEL1b
tMIN
tSS1
tSS2
tSS3
DMAX
RFB
61.5
20
-
95.0
20
-
65.0
25
4.0
100.0
27
6.0
500
2.00
4.00
8.00
75.0
30
4.00
0.400
0.450
68.5
30
-
105.0
34
-
kHz
kHz
kHz
kHz
kHz
kHz
ns
ms
ms
ms
%
VFB=2.0V(BM2P061EK-LB)
VFB=0.5V(BM2P061EK-LB)
VFB=2.0V(BM2P061EK-LB)
VFB=2.0V(BM2P101EK-LB)
VFB=0.5V(BM2P101EK-LB)
VFB=2.0V(BM2P101EK-LB)
(Note 4)
-
-
1.20
2.40
4.80
68.0
23
2.80
5.60
11.20
82.0
37
kΩ
V/V
V
Gain
VBST1
VBST2
-
-
FB Burst Voltage1
FB Burst Voltage2
0.300
0.350
0.500
0.550
VFB fall
VFB rise
V
Frequency Reduction Start
FB Voltage
Frequency Reduction Stop
FB Voltage
VDLT1
VDLT2
1.10
0.50
1.25
0.65
1.40
0.80
V
V
FB OLPvoltage1
FB OLPvoltage2
FB OLP ON Timer
FB OLP OFF Timer
Over Current Detection Voltage a
Over Current Detection Voltage b
Dynamic Over Current Detection
Voltage
VFOLP1
VFOLP2
tFOLP1
tFOLP2
VCSa
3.20
3.00
40
358
0.380
0.280
3.40
3.20
64
512
0.400
0.300
3.60
3.40
88
666
0.420
0.320
V
V
ms
ms
V
OLP detect VFB rise
OLP release VFB fall
BM2P061EK-LB
BM2P101EK-LB
VCSb
V
VDCS
0.950
1.050
1.150
V
Dynamic Over Current Detection
timer
Leading Edge Blanking Time
SOURCE Pin Short Protection
Voltage
tDCS
tLEB
64
-
128
250
196
-
μs
ns
V
(Note 4)
VCSSHT
0.030
0.060
0.090
SOURCE Pin Short Protection
Time
tCSSHT
1.0
2.0
3.0
μs
(Note 3) Over temperature protection operates over Maximum Junction Temperature. Since, IC cannot guarantee for the operation over Maximum Junction
Temperature, always operate at Maximum Junction Temperature or less.
(Note 4) Not 100% tested.
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Electrical Characteristics in Control IC Part (Unless otherwise noted, Ta=25°C VCC=15V)
Specifications
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
[ BR pin function ]
BR Pin UVLO Detection Voltage1
BR Pin UVLO Detection Voltage 2
BR Pin UVLO Hysteresis Voltage
BR Pin UVLO Detection Delay
Time1
VBR1
VBR2
VBR3
0.64
0.32
-
0.70
0.38
0.32
0.76
0.44
-
V
V
V
VBR rise
VBR fall
VBR3 = VBR1 - VBR2
tBR1
tBR2
50
64
100
128
150
196
μs
VBR rise
BR Pin UVLO Detection Delay
Time2
ms
VBR fall
[ ZT pin function ]
ZT OVP Voltage
ZT OVP Timer
ZT Trigger Mask Time
(Note 4) Not 100% tested.
VZTOVP
tZTOVP
tZTMASK
3.250
50
-
3.500
100
0.60
3.750
150
-
V
μs
µs
(Note 4)
Protection Circuit Operation Modes
The operation modes of the various protection functions of the IC are shown in Table 1.
Table 1 Protection Circuit Operation Modes
SOURCE
Short
Protection
VCC
UVLO
VCC
OVP
FB
OLP
BR
UVLO
ZT
OVP
Function
Detection
Release
TSD
VCC<VUVLO2 VCC>VOVP1
(VCC fall) (VCC rise)
Tj>TSD1
(Tj rise)
VFB>VFOLP1 SOURCE<VCSSHT
VBR<VBR2
(VBR fall)
VZT<VZTOVP
(VFB rise)
(tCSSHT=2µs)
(pulse)
VCC>VUVLO1 VCC<VOVP2
Tj<TSD2
(Tj fall)
VFB<VFOLP2
(VFB fall)
Reset
Pulse by Pulse
VBR>VBR1
(VBR rise)
VZT<VZTOVP
(VCC rise)
(VCC fall)
(pulse)
Detection
Timer
3count
+100µs
-
100µs
100µs
64ms
-
-
128ms
100µs
Release
Timer
-
-
-
512ms
-
Auto
Recovery
Auto
Recovery
Auto
Recovery
Auto
Recovery
Auto
Recovery
Auto
Recovery
Mode
Latch
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BM2P061EK-LB BM2P101EK-LB
I/O Equivalence Circuit
-
-
7
DRAIN
DRAIN
6
VCC
VCC
5
ZT
ZT
Internal
MOSFET
-
SOURCE
1
SOURCE
2
BR
3
GND
GND
4
FB
Internal Ref.
SOURCE
BR
FB
Figure 14. I/O Equivalence Circuits
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Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
7.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
10. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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Operational Notes – continued
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 15. Example of monolithic IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BM2P061EK-LB BM2P101EK-LB
Ordering Information
B M 2 P x x x E K - L
B
BM2: Integrated
Switching
MOSFET
P: PWM Type
PWM Frequency
06: 65kHz
10: 100kHz
MOS FET RDS(ON)
1: 1.6Ω
E: Lineup No.
MOS FET Break Down Voltage
K: 800V
Product class
LB: For Industrial Applications
Lineup
PWM
Frequency
(kHz)
MOS FET
Break Down
Voltage
MOS FET
RDS(ON) (Ω)
Orderable Part
Number
Package
65
100
BM2P061EK-LB
BM2P101EK-LB
1.6
800V
DIP7AK
Making Diagram
DIP7AK(TOP VIEW)
7 6 5
Part Number Marking
Part Number Marking
BM2P101EK
LOT Number
BM2P061EK
Pin 1 Mark
1
2
3
4
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Physical Dimension and Packing Information
DIP7AK
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Revision History
Date
Rev. No
Revision point
17.Aug.2017
21.Feb.2018
001
002
New Release
Modify explanation and Vcsb of BM2P101EK-LB
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号：
BM2P101FK-LBZ
本产品面向工业设备市场，确保长期供应。作为AC/DC用PWM方式DC/DC转换器，该系列为所有产品提供适合的系统。支持隔离和非隔离方式，容易设计低功耗转换器。内置800V耐压启动电路，有助于降低功耗。由于采用电流模式控制，可逐周期电流限制，实现卓越的带宽和瞬态响应性能。开关频率为100kHz固定频率。轻负载时，执行低频工作，以实现高效率。内置跳频功能，有助于降低EMI。本产品内置800V耐压超级结MOSFET。
ROHM
BM2P101H-Z
本系列作为AC/DC用PWM方式DC/DC转换器，为各种产品提供适合的系统。绝缘、非绝缘均可对应，可轻松设计低功耗转换器。内置650V耐压启动电路，有助于实现低功耗。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为65kHz、100kHz、130kHz。轻负载时降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置650V耐压超级结MOSFET。
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BM2P101HK-LBZ
本产品面向工业设备市场、可保证长期稳定供货。是适合这些用途的产品。本系列作为AC/DC用PWM方式DC/DC转换器，为各种产品提供适合的系统。绝缘、非绝缘均可对应，可轻松设计低功耗转换器。内置800V耐压启动电路，有助于实现低功耗。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为65kHz、100kHz、130kHz。轻负载时降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置800V耐压超级结MOSFET。
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BM2P101W-Z
本IC作为AC/DC用PWM方式DC/DC转换器为各种存在插座的产品提供优良的系统。可轻松设计非绝缘的高效率转换器。内置650V耐压启动电路，有助于实现低功耗。内置电流检测电阻，可实现小型电源设计。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为65kHz。此外，内置跳频功能，有助于实现低EMI。还内置650V耐压超级结MOSFET，设计更容易。
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BM2P101X-Z
此IC是用于AC/DC的PWM方式DC/DC转换器，为所有带插座的产品提供合适的电源系统。可以轻松设计专用于非绝缘的高效率转换器。内置650V耐压启动电路，有助于降低功耗。内置电流检测电阻，实现紧凑的电源设计。由于使用了电流模式控制，因此可对每个回路进行电流限制，并且带宽和瞬态响应性能非常出色。开关频率是65kHz固定方式。内置跳频功能，有助于降低EMI。此外内置650V耐压超级结MOSFET，易于设计。
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BM2P103EK-LBZ
BM2P103EK-LB是一款为工业设备市场保证长期供应的产品。本系列产品是AC/DC用PWM方式DC/DC转换器，为各种设备提供适合的电源系统。支持绝缘和非绝缘型，容易设计低功率转换器。内置800V耐压启动电路，有助于降低功耗。由于使用电流模式控制方式，并对每个回路进行电流限制，实现卓越的带宽和瞬态响应性能。采用固定频率方式，开关频率为65kHz、100kHz和130kHz。轻负载时，降低频率，实现高效率。内置跳频功能，有助于降低EMI。该产品内置800V耐压超级结MOSFET。
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BM2P103HK-LBZ
本产品面向工业设备市场、可保证长期稳定供货。针对这些目标应用，是适合使用的产品。本系列作为AC/DC用PWM方式DC/DC转换器，为各种产品提供适合的系统。绝缘、非绝缘均可对应，可轻松设计低功耗转换器。内置800V耐压启动电路，有助于实现低功耗。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为65kHz、100kHz、130kHz。轻负载时降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置800V耐压超级结MOSFET。
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BM2P104E-Z
BM2P104E-Z作为AC/DC用PWM方式DC/DC转换器为所有产品提供很好的系统。绝缘、非绝缘均可对应，可轻松设计低功耗转换器。内置650V耐压启动电路，有助于实现低功耗。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为100kHz。轻负载时降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置650V耐压超级结MOSFET。
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BM2P104EF
本系列是AC-DC用 PWM方式 DC-DC转换器，可为各种产品提供理想的系统。同时支持隔离和非隔离两种类型，可轻松设计低功耗转换器。内置730V耐压启动电路，有助于降低功耗。采用电流模式控制，实现逐周期电流限制，带宽和瞬态响应性能优异。开关频率采用固定方式（100kHz）。轻负载时能够降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置730V耐压超级结MOSFET。提供支持各种功率段和拓扑的评估板。a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
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BM2P104H-Z
本系列作为AC/DC用PWM方式DC/DC转换器，为各种产品提供适合的系统。绝缘、非绝缘均可对应，可轻松设计低功耗转换器。内置650V耐压启动电路，有助于实现低功耗。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。开关频率固定为65kHz、100kHz、130kHz。轻负载时降低频率，实现高效率。内置跳频功能，有助于实现低EMI。本产品内置650V耐压超级结MOSFET。
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