BD9E201FP4-Z [ROHM]
BD9E201FP4-Z是一款内置低导通电阻功率MOSFET的单通道同步整流降压型DC-DC转换器。该产品还采用内置相位补偿单元的电流模式控制方式，并采用小型封装，实现了高功率密度，并可缩小PCB上的Footprint尺寸。;
| 型号： | BD9E201FP4-Z |
| 厂家： | 
ROHM |
| 描述： | BD9E201FP4-Z是一款内置低导通电阻功率MOSFET的单通道同步整流降压型DC-DC转换器。该产品还采用内置相位补偿单元的电流模式控制方式，并采用小型封装，实现了高功率密度，并可缩小PCB上的Footprint尺寸。 PC DC-DC转换器 |
| 文件： | 总40页 (文件大小：2271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
4.5 V to 28 V Input, 2.0 A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9E201FP4-Z
General Description
Key Specifications
◼ Input Voltage Range:
◼ Output Voltage Range:
◼ Output Current:
BD9E201FP4-Z is a single synchronous buck DC/DC
converter with built-in low on-resistance power MOSFETs.
BD9E201FP4-Z is a current mode control. It includes
internal phase compensation. It achieves the high power
density and offers a small footprint on the PCB by employing
small package.
4.5 V to 28.0 V
VINx0.1 or 0.7 V to VINx0.8 V
2 A (Max)
◼ Switching Frequency:
350 kHz (Typ)
◼ High Side FET ON Resistance:
◼ Low Side FET ON Resistance:
◼ Shutdown Current:
185 mΩ (Typ)
98 mΩ (Typ)
8.5 μA (Typ)
510 μA (Typ)
◼ Operating Quiescent Current:
Features
◼ Single Synchronous Buck DC/DC Converter
◼ Internal Phase Compensation
◼ Over Voltage Protection (OVP)
◼ Over Current Protection (OCP)
◼ Short Circuit Protection (SCP)
◼ Thermal Shutdown Protection (TSD)
◼ Under Voltage Lockout Protection (UVLO)
◼ Reduced External Diode
Package
TSOT23-6L
W (Typ) x D (Typ) x H (Max)
2.8 mm x 2.9 mm x 0.95 mm
◼ TSOT23-6L Package
Applications
◼ Home Appliance Products (i.e., Air Conditioner,
Refrigerator)
TSOT23-6L
◼ Secondary Power Supply and Adapter Equipment
◼ Telecommunication Devices
Typical Application Circuit
BD9E201FP4
VEN
VIN
EN
VIN
BOOT
SW
0.1 μF
L
CIN
VOUT
RFB2
CFB
COUT
FB
RFB1
GND
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
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Pin Configuration
(TOP VIEW)
BOOT
EN
GND
SW
1
2
3
6
5
4
FB
VIN
Pin Description
Pin No. Pin Name
Function
1
2
GND
Ground pins for the control circuit and output stage of the switching regulator.
Switch pin. This pin is connected to the source of the High Side FET and the drain of the Low
Side FET. Connect a bootstrap capacitor of 0.1 µF between this pin and the BOOT pin. In
addition, connect an inductor considering the direct current superimposition characteristic.
SW
Power supply pin. Connecting 0.1 µF (Typ) and 10 µF (Typ) ceramic capacitors is
recommended. The detail of a selection is described in Selection of Components Externally
Connected 1. Input Capacitor.
3
VIN
Output voltage feedback pin. See Selection of Components Externally Connected 3. Output
Voltage Setting, FB Capacitor for the output voltage setting.
4
5
6
FB
EN
Enable pin. This pin is internally pull-up to internal regulator voltage by 1 MΩ (Typ) resistor. It
allows to operate the IC if this pin is not connected to any supply. To use external supply, the
device starts up with setting VEN to 1.21 V (Typ) or more. The device enters the shutdown
mode with setting VEN to 1.10 V (Typ) or less.
Pin for bootstrap. Connect a bootstrap capacitor of 0.1 µF (Typ) between this pin and the SW
pin. The voltage of this pin is the gate drive voltage of the High Side FET.
BOOT
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Block Diagram
VIN
VIN
BOOT
EN
6
BOOTREG
5
REG
SCP
OVP
VIN
OSC
UVLO
TSD
VIN
3
2
1
HOCP
SOFT
START
On-time
Circuit
VOUT
SW
DRIVER
LOGIC
SW
+
+
_
FB
4
Current Sense
Compensation
+
_
ERRAMP
Current Sense
Comparator
GND
RCP
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Description of Blocks
1. REG
This block generates the internal regulator voltage.
2. SOFT START
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the
prevention of output voltage overshoot and inrush current. The internal soft start time is 5 ms (Typ).
3. ERRAMP
This is the error amplifier. This block compares the FB voltage (VFB) and the internal reference voltage. The output voltage
is set by the FB external resistors.
4. Current Sense Comparator
This is a comparator that compares the ERRAMP signal with the current sense signal compensated by ramp signal.
5. On-time Circuit
This block generates the High Side FET on-time signal. Generates an on-time signal determined by the Current Sense
Comparator output and OSC signal.
6. UVLO
The UVLO block is for under voltage lockout protection. The device is shutdown when input voltage (VIN) falls to 3.9 V
(Typ) or less. The threshold voltage has the 350 mV (Typ) hysteresis.
7. TSD
The TSD block is for thermal protection. The device is shutdown when the junction temperature Tj reaches to 175 °C
(Typ) or more. The device is automatically restored to normal operation with a hysteresis of 25 °C (Typ) when the Tj goes
down.
8. OVP
The OVP block is for over voltage protection. When the FB voltage (VFB) exceeds 120 % (Typ) or more of FB threshold
voltage VFBTH, the output MOSFETs are turned off. After VFB falls 115 % (Typ) or less of VFBTH, the device is returned to
normal operation condition.
9. HOCP
This block is for over current protection of the High Side FET. When the current that flows through the High Side FET
reaches the value of over current limit, it turns off the High Side FET and turns on the Low Side FET.
10. RCP
This circuit is a comparator that monitors the inductor current. When inductor current falls below 2.8 A (Typ) while the
Low Side FET is on, it turns off the Low Side FET.
11. SCP
This block is for short circuit protection. After soft start is completed and in condition where VFB is 70 % (Typ) of 0.596 V
or less and remained there for 0.73 ms (Typ), the device is shutdown for 47 ms (Typ) and subsequently initiates a restart.
12. DRIVER LOGIC
This block controls the switching operation and protection function operation.
13. OSC
This block generates the internal oscillation frequency.
14. BOOTREG
Block creating gate drive voltage.
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Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Symbol
Rating
Unit
Input Voltage
VIN
VSW
-0.3 to +30
-0.3 to VIN+0.3
-3
V
V
SW Voltage
SW Voltage (10 ns pulse width)
Voltage from GND to BOOT
Voltage from SW to BOOT
FB Voltage
VSWAC
VBOOT
ΔVBOOT
VFB
V
-0.3 to +35
-0.3 to +7
-0.3 to +3
-0.3 to +3
2
V
V
V
EN Voltage
VEN
V
Output Current
IOUT
A
Maximum Junction Temperature
Tjmax
150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance(Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
TSOT23-6L
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
223.9
46.0
111.9
40.0
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A (Still-Air), using a BD9E201FP4 Chip.
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
70 μm
Footprints and Traces
Layer Number of
Measurement Board
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
4 Layers
Top
Copper Pattern
Bottom
Copper Pattern
74.2 mm x 74.2 mm
Thickness
70 μm
Copper Pattern
Thickness
35 μm
Thickness
70 μm
Footprints and Traces
74.2 mm x 74.2 mm
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Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Input Voltage
VIN
Topr
IOUT
4.5
-40
0
-
-
-
-
28.0
+85
V
°C
A
Operating Temperature(Note 1)
Output Current(Note 1)
Output Voltage Setting(Note 2)
2
VOUT
0.7
VINx0.8
V
(Note 1) Tj must be 150 °C or less under the actual operating environment. Life time is derated at junction temperature greater than 125 °C.
(Note 2) Please use within the range of VOUT ≥ VIN × 0.1 [V].
Electrical Characteristics (Unless otherwise specified Ta = 25 °C, VIN = 12 V, VEN = 3 V)
Parameter
Input Supply
Symbol
Min
Typ
Max
Unit
Conditions
Shutdown Current
ISTBY
IQ
-
-
8.5
20.0
800
µA
µA
VEN = 0 V
IOUT = 0 A,
No switching
Operating Quiescent Current
510
UVLO Threshold Voltage
UVLO Hysteresis Voltage
Enable
VUVLO
3.7
3.9
4.1
V
VIN falling
VUVLOHYS
250
350
450
mV
EN Threshold Voltage High
EN Threshold Voltage Low
EN Input Current
VENH
VENL
IEN
1.10
1.00
-7.0
1.21
1.10
-2.0
1.30
1.20
-0.5
V
V
VEN rising
VEN falling
VEN = 3 V
µA
Reference Voltage, Error Amplifier, Soft Start
FB Threshold Voltage
FB Input Current
VFBTH
IFB
0.587
-
0.596
-
0.605
100
V
nA
ms
VFB = 1 V
Soft Start Time
tSS
3.5
5.0
6.5
SW (MOSFET)
Switching Frequency
Maximum Duty Ratio
fSW
250
80
350
-
450
-
kHz
%
DMAX
High Side FET ON
Resistance
RONH
RONL
-
-
185
98
290
165
mΩ
mΩ
VBOOT - VSW = 5 V
Low Side FET ON Resistance
Protection
High Side Over Current Limit
IHOCP
IRCP
2.5
1.8
3.2
2.8
4.1
3.8
A
A
No switching
No switching
(Note 3)
Low Side Reverse Current
Limit(Note 3)
(Note 3) No tested on outgoing inspection.
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Typical Performance Curves
Figure 1. Shutdown Current vs Temperature
Figure 2. Operating Quiescent Current vs Temperature
Figure 3. UVLO Threshold Voltage vs Temperature
Figure 4. EN Threshold Voltage vs Temperature
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Typical Performance Curves – continued
Figure 5. EN Input Current vs EN Voltage
Figure 6. EN Input Current vs Temperature
Figure 7. FB Threshold Voltage vs Temperature
Figure 8. FB Input Current vs Temperature
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Typical Performance Curves – continued
Figure 10. Switching Frequency vs Temperature
Figure 9. Soft Start Time vs Temperature
Figure 11. Maximum Duty Ratio vs Temperature
Figure 12. High Side FET ON Resistance vs Temperature
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Typical Performance Curves – continued
Figure 13. Low Side FET ON Resistance vs Temperature
Figure 14. High Side Over Current Limit vs Temperature
Figure 15. Low Side Reverse Current Limit vs Temperature
Figure 16. Output Voltage vs Output Current
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Typical Performance Curves – continued
Figure 17. Efficiency vs Output Current
(VOUT = 5 V)
Figure 18. Output Current vs Input Voltage
Operating Range: Tj < 150 °C
(VOUT ≤ 1.8 V)
Figure 19. Output Current vs Input Voltage
Operating Range: Tj < 150 °C
(VOUT = 3.3 V)
Figure 20. Output Current vs Input Voltage
Operating Range: Tj < 150 °C
(VOUT = 3.3 V)
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Typical Performance Curves – continued
Time: 500 ms/div
Time: 2 ms/div
VIN: 10 V/div
VIN: 10 V/div
VEN: 2 V/div
VEN: 2 V/div
VOUT: 2 V/div
VOUT: 2 V/div
Figure 21. Start-up at No Load: VEN = 0 V to 2 V
(VIN = 12 V, VOUT = 5 V)
Figure 22. Shutdown at No Load VEN = 2 V to 0 V
(VIN = 12 V, VOUT = 5 V)
Time: 2 ms/div
VIN: 10 V/div
Time: 1 ms/div
VIN: 10 V/div
VEN: 2 V/div
VOUT: 2 V/div
VEN: 2 V/div
VOUT: 2 V/div
Figure 23. Start-up at RLOAD = 2.5 Ω: VEN = 0 V to 2 V
(VIN = 12 V, VOUT = 5 V)
Figure 24. Shutdown at RLOAD = 2.5 Ω: VEN = 2 V to 0 V
(VIN = 12 V, VOUT = 5 V)
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Typical Performance Curves – continued
Figure 25. Output Current vs Temperature(Note 1)
Operating Range: Tj < 150 °C
Figure 26. Output Current vs Temperature(Note 1)
Operating Range: Tj < 150 °C
(VIN = 5 V, 7 V, VOUT = 0.7 V)
(VIN = 5 V, 12 V, VOUT = 1.2 V)
Figure 27. Output Current vs Temperature(Note 1)
Operating Range: Tj < 150 °C
Figure 28. Output Current vs Temperature(Note 1)
Operating Range: Tj < 150 °C
(VIN = 12 V, 24 V, VOUT = 3.3 V)
(VIN = 12 V, 24 V, VOUT = 5 V)
(Note 1) Measured on FR-4 board 67.5 mm x 67.5 mm, Copper Thickness: Top and Bottom 70 μm, 2 Internal Layers 35 μm.
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Typical Performance Curves – continued
Figure 29. Output Current vs Temperature(Note 1)
Operating Range: Tj < 150 °C
(VIN = 24 V, VOUT = 12 V)
(Note 1) Measured on FR-4 board 67.5 mm x 67.5 mm, Copper Thickness: Top and Bottom 70 μm, 2 Internal Layers 35 μm.
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Function Explanation
1. Basic Operation
(1) DC/DC Converter Operation
BD9E201FP4-Z is a synchronous rectifying step-down switching regulator that achieves faster transient response by
employing current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode.
Fixed PWM Mode Control
Output Current [A]
Figure 30. Efficiency Image PWM Mode Control
(2) Enable Control
The startup and shutdown can be controlled by the EN voltage (VEN). When VEN becomes 1.21 V (Typ) or more, the
internal circuit is activated and the device starts up. When VEN becomes 1.10 V (Typ) or less, the device is shutdown.
To enable shutdown control with the EN pin, the shutdown interval must be set to 100 µs or longer.
VIN
0 V
VEN
VENH
VENL
0 V
VOUT
0 V
Startup
Shutdown
Figure 31. Startup and Shutdown with Enable Control Timing Chart
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1. Basic Operation – continued
(3) Soft Start
When VEN goes high, soft start function operates and output voltage gradually rises. This soft start function can prevent
overshoot of the output voltage and excessive inrush current. The soft start time tSS is 5 ms (Typ).
0.596 V
(Typ)
Figure 32. Soft Start Timing Chart
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Function Explanation - continued
2. Protection
The protection circuits are intended for prevention of damage caused by unexpected accidents. Do not use the
continuous protection.
(1) Over Current Protection (OCP) / Short Circuit Protection (SCP)
Over Current Protection (OCP) restricts the flowing current through the High Side FET for every switching period. SW
switching is masked by 3clock cycles when OCP is detected.
Short Circuit Protection (SCP) function is a Hiccup mode. When VFB remains VFBTH x 70 % or less for 0.73 ms (Typ),
the device stops the switching operation for 47 ms. After that, the device restarts. SCP does not operate during the soft
start even if the device is in the SCP conditions. Do not exceed the maximum junction temperature (Tjmax = 150 °C)
during OCP and SCP operation.
Table 1. The Operating Condition of OCP and SCP
VEN
VFB
Start-up
OCP
SCP
≤ VFBTH x 70 % (Typ)
> VFBTH x 70 % (Typ)
≤ VFBTH x 70 % (Typ)
-
During Soft Start
Enable
Enable
Enable
Disable
Disable
Disable
Enable
Disable
≥ 1.21 V (Typ)
≤ 1.10 V (Typ)
Complete Soft Start
Shutdown
V
OUT
V
x 70 % (Typ)
FBTH
V
FB
CLK
V
SW
High Side FET
Internal Gate Signal
Low Side FET
Internal Gate Signal
= 3.2 A (Typ)
I
HOCP
Inductor Current
Less than
0.73 ms (Typ)
SCP
Internal Signal
0.73 ms (Typ)
47 ms (Typ)
Figure 33. OCP and SCP Timing Chart
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2. Protection – continued
(2) Under Voltage Lockout Protection (UVLO)
When input voltage VIN falls to 3.90 V (Typ) or less, the device is shutdown. When VIN becomes 4.25 V (Typ) or more,
the device starts up. The hysteresis is 350 mV (Typ).
Figure 34. UVLO Timing Chart
The under voltage lock-out protection (UVLO) threshold voltages can be set higher than the internal UVLO threshold
voltage by the resistor divider network connected between the VIN and EN pins.
Resistor divider network can be computed as follows:
푉
−푉
퐸푋_푈ꢀ퐿푂푂퐹퐹
퐸푁퐻
푅3 =
[Ω]
ꢀ
퐸푁퐻
−퐼
ꢁ
ꢁ
4
5.1푘 ≤ 푅ꢂ ≤ 51푘 [Ω]
푉퐼ꢊ
ꢃꢄꢅ_ꢆ푉ꢇꢈꢈꢉꢉ
≤
[V]
ꢋ.2
Resistor divider hysteresis voltage can be computed
as follows:
ꢏ +ꢏ
ꢐ
4ꢑ [V]
(
)
ꢃꢆ푉ꢇꢈꢌ푌푆2 = ꢃꢄꢊꢌ ꢍ ꢃꢄꢊꢇ × ꢎ
ꢏ
4
Figure 35. External UVLO Setting
where:
IR = 3.8 µA (Typ)
VENH = 1.21 V (Typ)
VENL = 1.1 V (Typ)
VEX_UVLOOFF: Resistor divider UVLO release setting
VUVLOHYSꢒ: Resistor divider UVLO hysteresis setting
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2. Protection – continued
(3) Thermal Shutdown Protection (TSD)
Thermal shutdown circuit prevents heat damage to the IC. The device should always operate within the IC’s maximum
junction temperature rating (Tjmax = 150 °C). However, if it continues exceeding the rating and the junction temperature
Tj rises to 175 °C (Typ), the TSD circuit is activated and it turns the output MOSFETs off. When the Tj falls below the
TSD threshold, the circuits are automatically restored to normal operation. The TSD threshold has a hysteresis of 25 °C
(Typ). Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings. Therefore, under
no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
(4) Over Voltage Protection (OVP)
When the FB voltage VFB exceeds VFBTH x 120 % (Typ) or more, the output MOSFETs are turned off to prevent the
increase in the output voltage. After the VFB falls VFBTH x 115 % (Typ) or less, the output MOSFETs are returned to
normal operation condition. Switching operation restarts after VFB falls below VFBTH (Typ).
(5) Reverse Current Protection (RCP)
This circuit is a comparator that monitors the inductor current. When inductor current falls below 2.8 A (Typ) while the
Low Side FET is on, it turns off the Low Side FET.
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Application Examples
1. VIN = 7 V to 24 V, VOUT = 3.3 V
Table 2. Specification of Application
Parameter
Input Voltage
Symbol
Specification Value
7 V to 24 V (Typ)
3.3 V (Typ)
2 A
VIN
VOUT
IOUTMAX
Ta
Output Voltage
Maximum Output Current
Temperature
25 °C
BD9E201FP4
BOOT
CBOOT
VIN
VIN
VOUT
CIN2
CIN1
SW
L
R0
GND
R3
R1A
R1B
R2
COUT1
COUT2
CFB
EN
EN
FB
R4
Figure 36. Application Circuit
Table 3. Recommended Component Values
Size Code
Part No.
Value
10 μH
Part Name
Manufacturer
(mm)
L
1217AS-H-100M
8080
Murata
(Note 1)
CIN1
0.1 μF (50 V, X5R, ±10 %)
GRM155R61H104KE14
1005
Murata
(Note 2)
CIN2
10 μF (100 V, X7S, ±10 %)
GRM32EC72A106KE05
3225
Murata
(Note 3)
CBOOT
0.1 μF (50 V, X5R, ±10 %)
GRM155R61H104KE14
1005
Murata
(Note 4)
COUT1
22 μF (25 V, X7R, ±10 %)
GRM32ER71E226KE15
3225
Murata
(Note 4)
COUT2
22 μF (25 V, X7R, ±10 %)
GRM32ER71E226KE15
3225
Murata
CFB
-
-
-
-
(Note 5)
R0
Short
-
-
-
R1A
R1B
R2
Short
-
-
-
100 kΩ (1 %, 1/16 W)
MCR01MZPF1003
1005
ROHM
22.1 kΩ (1 %, 1/16 W)
MCR01MZPF2212
1005
ROHM
R3
-
-
-
-
-
-
-
-
R4
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor CIN1 as close as possible to the VIN pin and the GND
pin.
(Note 2) For the input capacitor CIN2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no
less than 3.0 μF.
(Note 3) For the bootstrap capacitor CBOOT, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance
of no less than 0.022 μF.
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor COUT1 and
COUT2, the loop response characteristics may change. Confirm the actual application.
(Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.
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1. VIN = 7 V to 24 V, VOUT = 3.3 V – continued
VOUT: 20 mV/div
Time: 5 µs/div
VSW: 5 V/div
Figure 37. Efficiency vs Output Current
Figure 38. Output Ripple Voltage (VIN = 12 V, IOUT = 2 A)
VOUT: 200 mV/div
Time: 200 µs/div
IOUT: 500 mA/div
Figure 39. Frequency Characteristics (VIN = 12 V, IOUT = 2 A)
Figure 40. Load Transient Response
(VIN = 12 V, IOUT = 0.5 A to 1.5 A)
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Application Examples - continued
2. VIN = 7 V to 24 V, VOUT = 5 V
Table 4. Specification of Application
Parameter
Input Voltage
Symbol
Specification Value
7 V to 24 V (Typ)
5 V (Typ)
VIN
VOUT
IOUTMAX
Ta
Output Voltage
Maximum Output Current
Temperature
2 A
25 °C
BD9E201FP4
BOOT
CBOOT
VIN
VIN
VOUT
CIN2
CIN1
SW
L
R0
GND
R3
R1A
R1B
R2
COUT1
COUT2
CFB
EN
EN
FB
R4
Figure 41. Application Circuit
Table 5. Recommended Component Values
Size Code
Part No.
Value
Part Name
Manufacturer
(mm)
L
15 μH
0.1 μF (50 V, X5R, ±10 %)
10 μF (100 V, X7S, ±10 %)
0.1 μF (50 V, X5R, ±10 %)
22 μF (25 V, X7R, ±10 %)
22 μF (25 V, X7R, ±10 %)
-
1217AS-H-150M
GRM155R61H104KE14
GRM32EC72A106KE05
GRM155R61H104KE14
GRM32ER71E226KE15
GRM32ER71E226KE15
-
8080
Murata
Murata
Murata
Murata
Murata
Murata
-
(Note 1)
CIN1
CIN2
1005
3225
1005
3225
3225
-
(Note 2)
(Note 3)
(Note 4)
(Note 4)
CBOOT
COUT1
COUT2
CFB
(Note 5)
R0
Short
-
-
-
R1A
R1B
R2
0.82 kΩ (1 %, 1/16 W)
110 kΩ (1 %, 1/16 W)
15 kΩ (1 %, 1/16 W)
-
MCR01MZPF8200
MCR01MZPF1103
MCR01MZPF1502
-
1005
1005
1005
-
ROHM
ROHM
ROHM
-
R3
R4
-
-
-
-
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor CIN1 as close as possible to the VIN pin and the GND
pin.
(Note 2) For the input capacitor CIN2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no
less than 3.0 μF.
(Note 3) For the bootstrap capacitor CBOOT, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance
of no less than 0.022 μF.
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor COUT1 and
COUT2, the loop response characteristics may change. Confirm the actual application.
(Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.
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2. VIN = 7 V to 24 V, VOUT = 5 V – continued
VOUT: 20 mV/div
Time: 2 µs/div
VSW: 5 V/div
Figure 42. Efficiency vs Output Current
Figure 43. Output Ripple Voltage (VIN = 12 V, IOUT = 2 A)
VOUT: 200 mV/div
Time: 200 µs/div
IOUT: 500 mA/div
Figure 44. Frequency Characteristics (VIN = 12 V, IOUT = 2 A)
Figure 45. Load Transient Response
(VIN = 12 V, IOUT = 0.5 A to 1.5 A)
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Application Examples - continued
3. VIN = 24 V, VOUT = 12 V
Table 6. Specification of Application
Parameter
Input Voltage
Symbol
Specification Value
24 V (Typ)
12 V (Typ)
2 A
VIN
VOUT
IOUTMAX
Ta
Output Voltage
Maximum Output Current
Temperature
25 °C
BD9E201FP4
BOOT
CBOOT
VIN
VIN
VOUT
CIN2
CIN1
SW
L
R0
GND
R3
R1A
R1B
R2
COUT1
COUT2
CFB
EN
EN
FB
R4
Figure 46. Application Circuit
Table 7. Recommended Component Values
Size Code
Part No.
Value
Part Name
Manufacturer
(mm)
L
22 μH
1217AS-H-220M
8080
Murata
(Note 1)
CIN1
CIN2
0.1 μF (50 V, X5R, ±10 %)
GRM155R61H104KE14
1005
Murata
(Note 2)
(Note 3)
10 μF (100 V, X7S, ±10 %)
GRM32EC72A106KE05
3225
Murata
CBOOT
COUT1
COUT2
0.1 μF (50 V, X5R, ±10 %)
GRM155R61H104KE14
1005
Murata
(Note 4)
(Note 4)
22 μF (25 V, X7R, ±10 %)
GRM32ER71E226KE15
3225
Murata
22 μF (25 V, X7R, ±10 %)
GRM32ER71E226KE15
3225
Murata
CFB
-
-
-
-
(Note 5)
R0
Short
-
-
-
R1A
R1B
R2
Short
-
-
-
100 kΩ (1 %, 1/16 W)
MCR01MZPF1003
1005
ROHM
5.23 kΩ (1 %, 1/16 W)
MCR01MZPF5231
1005
ROHM
R3
-
-
-
-
-
-
-
-
R4
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor CIN1 as close as possible to the VIN pin and the GND
pin.
(Note 2) For the input capacitor CIN2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no
less than 3.0 μF.
(Note 3) For the bootstrap capacitor CBOOT, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance
of no less than 0.022 μF.
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor COUT1 and
COUT2, the loop response characteristics may change. Confirm the actual application.
(Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.
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3. VIN = 24 V, VOUT = 12 V – continued
VOUT: 20 mV/div
Time: 5 µs/div
VSW: 10 V/div
Figure 47. Efficiency vs Output Current
Figure 48. Output Ripple Voltage (VIN = 24 V, IOUT = 2 A)
VOUT: 500 mV/div
Time: 200 µs/div
IOUT: 500 mA/div
Figure 49. Frequency Characteristics (VIN = 24 V, IOUT = 2 A)
Figure 50. Load Transient Response
(VIN = 24 V, IOUT = 0.5 A to 1.5 A)
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Selection of Components Externally Connected
Contact us if not use the recommended component values in Application Examples.
1. Input Capacitor
Use ceramic type capacitor for the input capacitor. The input capacitor is used to reduce the input ripple noise and it is
effective by being placed as close as possible to the VIN pin. Set the capacitor value so that it does not fall to 3 μF
considering the capacitor value variances, temperature characteristics, DC bias characteristics, aging characteristics, and
etc. The PCB layout and the position of the capacitor may lead to IC malfunction. Refer to the notes on the PCB layout on
PCB Layout Design when designing PCB layout. In addition, the capacitor with value 0.1 μF can be connected as close as
possible to the VIN pin and the GND pin in order to reduce the high frequency noise.
2. Output LC Filter
In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output
voltage. For recommended inductance, use the values listed in Table 8.
VIN
IL
Inductor saturation current > IOUTMAX + ∆IL/2
L
VOUT
Driver
∆IL
Maximum Output Current IOUTMAX
COUT
t
Figure 51. Waveform of Inductor Current
Figure 52. Output LC Filter Circuit
For example, given that VIN = 12 V, VOUT = 5 V, L = 15 μH, and the switching frequency fSW = 350 kHz, Inductor current
ΔIL can be represented by the following equation.
ꢋ
(
)
×
∆ꢓꢇ = ꢃꢈꢆ푇 × ꢃ ꢍ ꢃꢈꢆ푇
= 0.555 [A]
퐼ꢊ
푉
ꢔ푁
×푓 ×ꢇ
ꢕ푊
The rated current of the inductor (Inductor saturation current) must be larger than the sum of the maximum output current
IOUTMAX and 1/2 of the inductor ripple current ΔIL.
Use ceramic type capacitor for the output capacitor COUT. For recommended actual capacitance, use the values listed in
Table 8. COUT affects the output ripple voltage. Select COUT so that it must satisfy the required ripple voltage
characteristics.
The output ripple voltage can be estimated by the following equation.
ꢋ
∆ꢃꢏ푃ꢇ = ∆ꢓꢇ × ꢎ푅ꢄ푆ꢏ ꢖ 8×퐶
ꢑ [V]
ꢕ푊
×푓
푂푈ꢗ
where:
푅ꢄ푆ꢏ is the Equivalent Series Resistance (ESR) of the output capacitor.
For example, given that COUT = 44 μF and RESR = 5 mΩ, ΔVRPL can be calculated as below.
ꢋ
∆ꢃꢏ푃ꢇ = 0.555 퐴 × ꢎ5 푚훺 ꢖ 8×ꢂꢂ 휇ꢉ×3ꢘꢙ ꢚꢌ푧ꢑ = 7.ꢒꢛ [mV]
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2. Output LC Filter – continued
In addition, the total capacitance connected to VOUT needs to satisfy the value obtained by the following equation.
푡
ꢜꢈꢆ푇푀ꢝꢅ
<
ꢕꢕꢞꢔ푁 × (ꢓꢈꢆ푇푆푆 ꢍ ꢓꢈꢆ푇푀ꢝꢅ ꢍ ∆퐼퐿) [F]
푉
2
푂푈ꢗ
where:
ꢟ푆푆푀퐼ꢊ is the minimum soft start time.
ꢃꢈꢆ푇 is the output voltage.
ꢓꢈꢆ푇푀ꢝꢅ is the maximum output current.
∆IL is the inductor ripple current.
IOUTSS is the maximum output current during soft start.
For example, given that VIN = 12 V, VOUT = 5.0 V, L = 15 µH, fSW = 350 kHz (Typ), tSSMIN = 3.5 ms, IOUTMAX = 2 A, and
IOUTSS = 2.5 A, COUTMAX can be calculated as below.
ꢜꢈꢆ푇푀ꢝꢅ
<
3.ꢘ ꢠ푠 × (ꢒ.5 퐴 ꢍ ꢒ 퐴 ꢍ ꢙ.ꢘꢘꢘ ꢝ) = 155 [µF]
ꢘ.ꢙ 푉 2
If the total capacitance connected to VOUT is larger than COUTMAX, over current protection may be activated by the inrush
current at startup and prevented to turn on the output. Confirm this on the actual application.
Table 8. Recommended external parts value
(Note 1)
Inductor L
[μH]
COUT_EFF
[μF]
R1A + R1B
[kΩ]
VIN [V]
VOUT [V]
R2 [kΩ]
CFB [pF]
100
110.82
100
22.1
15
5.23
-
-
-
7 to 24
7 to 24
24
3.3
5
12
10
15
22
44
44
30
(Note 1) COUT_EFF is the sum of actual output capacitance.
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Selection of Components Externally Connected – continued
3. Output Voltage Setting, FB Capacitor
The output voltage can be set by the feedback resistance ratio connected to the FB pin. For recommended R1B and R2,
use the values listed in Table 8.
VOUT
The output voltage VOUT can be calculated as below.
CFB
R1B
ꢏ
+ꢏ
ꢡ퐵
ꢢ × 0.596 [V]
Error Amplifier
ꢃꢈꢆ푇
=
ꢏ
ꢢ
FB
R2
0.596 V
(Typ)
0.7 ≤ ꢃꢈꢆ푇 ≤ (ꢃ × 0.ꢛ) [V]
퐼ꢊ
Figure 53. Feedback Resistor Circuit
4. Bootstrap Capacitor
The bootstrap capacitor 0.1 μF is recommended. Connect the capacitor between the SW pin and the BOOT pin. For the
capacitance, take temperature characteristics, DC bias characteristics, and etc. into consideration to set to the actual
capacitance of no less than 0.022 μF.
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PCB Layout Design
PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning power
supply. Figure 54-a. to Figure 54-c show the current path in a buck DC/DC converter. The Loop 1 in Figure 54-a is a current
path when H-side switch is ON and L-side switch is OFF, the Loop 2 in Figure 54-b is when H-side switch is OFF and L-side
switch is ON. The thick line in Figure 54-c shows the difference between Loop1 and Loop2. The current in thick line change
sharply each time the switching element H-side and L-side switch change from OFF to ON, and vice versa. These sharp
changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted by input
capacitor and IC should be as small as possible to minimize noise. For more details, refer to application note of switching
regulator series “PCB Layout Techniques of Buck Converter”.
Loop1
VIN
VOUT
L
High Side Switch
CIN
COUT
Low Side Switch
GND
GND
Figure 54-a. Current Path when High Side Switch = ON, Low Side Switch = OFF
VIN
VOUT
L
High Side Switch
CIN
COUT
Loop2
Low Side Switch
GND
GND
Figure 54-b. Current Path when High Side Switch = OFF, Low Side Switch = ON
VIN
VOUT
L
CIN
COUT
High Side FET
Low Side FET
GND
GND
Figure 54-c. Difference of Current and Critical Area in Layout
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PCB Layout Design – continued
When designing the PCB layout, pay attention to the following points:
•
•
Connect the input capacitor C1 and C2 as close as possible to the VIN pin and the GND pin on the same plane as the
IC.
Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern
L as thick and as short as possible.
•
•
•
The feedback line connected to the FB pin should be as far away from the SW nodes as possible.
Place the output capacitor C5, C6 and C7 away from input capacitor C1 and C2 to avoid harmonics noise from the input.
R1 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R1, it
is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R1 is short-circuited
for normal use.
Figure 55. Application Circuit
Figure 56. Example of PCB Layout (Silkscreen Overlay)
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PCB Layout Design – continued
Top Layer
Inner 1 Layer
Inner 2 Layer
Bottom Layer
Figure 57. Example of PCB Layout
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I/O Equivalence Circuits
5. EN
4. FB
2. SW 6. BOOT
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Operational Notes
1.
2.
3.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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Operational Notes – continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 58. Example of Monolithic IC Structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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TSZ02201-0T7T0AJ01650-1-2
22.Mar.2023 Rev.002
34/37
BD9E201FP4-Z
Ordering Information
B D 9 E 2
0
1
F
P
4
-
Z T L
Package
TSOT23-6L
Packaging and forming specification
TL: Embossed tape and reel
Marking Diagram
Part Number Marking
LOT Number
TSOT23-6L (TOP VIEW)
A
B
Pin 1 Mark
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© 2021 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
TSZ02201-0T7T0AJ01650-1-2
22.Mar.2023 Rev.002
35/37
BD9E201FP4-Z
Physical Dimension and Packing Information
Package Name
TSOT23-6L
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© 2021 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
TSZ02201-0T7T0AJ01650-1-2
22.Mar.2023 Rev.002
36/37
BD9E201FP4-Z
Revision History
Date
Revision
001
Changes
25.Mar.2022
New Release
Page 11: Update data
Figure 17: Updated X-Axis format
Page 25: Update data
Figure 48: Output Ripple Voltage
Page 27: Update data
22.Mar.2023
002
Table 8: Change COUT_EFF value from 44 µF to 30 µF
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© 2021 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
TSZ02201-0T7T0AJ01650-1-2
22.Mar.2023 Rev.002
37/37
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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