BD8641EFV [ROHM]

Synchronous rectification with built-in FET type DC/DC converter IC; 同步整流用内置FET型的DC / DC转换器集成电路
BD8641EFV
型号: BD8641EFV
厂家: ROHM    ROHM
描述:

Synchronous rectification with built-in FET type DC/DC converter IC
同步整流用内置FET型的DC / DC转换器集成电路

转换器
文件: 总5页 (文件大小:254K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1/4  
STRUCTURE :  
Silicon Monolithic Integrated Circuit  
PRODUCT NAME :  
Synchronous rectification with built-in FET type DC/DC converter IC  
MODEL NAME:  
B D 8 6 4 1 E F V  
FEATURES :  
Synchronous rectification with built-in FET type DC/DC converter  
Reference voltage accuracy FB 0.8V±1%  
Switching frequency 250kHz2.3MHzSynchronizable with external clock.)  
Over current protection circuit  
Thermal shutdown  
Output voltage watch VDETfunction  
Input low voltage detection UVLOfunction  
Soft start / Start delay circuit  
ABSOLUTE MAXIMUM RATING (Ta=25℃)  
Parameter  
Symbol  
Limits  
7
VIN  
Unit  
V
V
V
A
Input supply voltage  
Input terminal voltage  
Output terminal voltage  
Output current  
PVIN, SVIN  
*1  
VINP  
VOUT  
*2  
VIN  
4
IOUT  
Pd  
3.2*3  
Power dissipation  
-40 85  
-55 150  
Operating temperature  
Storage temperature  
Topr  
Tstg  
1 VINP Application terminalSYNCLK, EN, SS/DELAY, FB  
2 VOUT Application terminalSW, VDET, FC, RT  
3 (70mm×70mm, thickness 1.6mm, and four layer glass epoxy substrates)When mounting substrate and the package  
back exposure part are connected with solder.  
Operating at higher than Ta=25, 25.6mW shall be reduced per 1  
Operation condition  
Parameter  
Input supply voltage  
Output current  
Symbol  
VIN  
IOUT  
MIN  
3.0  
-
TYP  
MAX  
5.5  
3
Unit  
-
-
A
This product is not designed for protection against radioactive rays.  
Status of this document  
The Japanese version of this document is the formal specification.  
A customer may use this translation version only for a reference to help reading the formal version.  
If there are any differences in translation version of this document, formal version takes priority.  
Be careful to handle because the content of the description of this material might correspond to the labor  
(technology in the design, manufacturing, and use) in foreign country exchange and Foreign Trade Control Law.  
REV. C  
2/4  
Electrical characteristic  
(Unless otherwise noted Ta=25, PVIN, SVIN=3.3V, GND=0V)  
Specification value  
Parameter  
Symbol  
UNIT  
Condition  
MIN  
-
TYP  
380  
0
0.8  
60  
-60  
-
2.3  
75  
55  
2.50  
0
MAX  
570  
10  
VIN supply current (operating)  
VIN supply current (standby)  
Reference voltage (VREF)  
Output rise detection voltage  
Output decrease detection voltage  
Terminal VDET output current  
Oscillation frequency  
Pch FET ON resistance  
Nch FET ON resistance  
UVLO voltage  
IQ_active  
IQ_stby  
VREF  
VOVP  
VLVP  
IVDET  
fOSC  
RPFET  
RNFET  
VUVLO  
ILSW  
VENH  
VENL  
IFCSI  
IFCSO  
ISSSO  
μA  
μA  
V
mV  
mV  
mA  
MHz  
mΩ  
mΩ  
V
μA  
V
V
μA  
μA  
μA  
VFB = 0.83V, VFC = 1V  
VEN = 0V  
-
0.792  
30  
-90  
0.4  
2.0  
-
0.808  
90  
Monitoring FB terminal  
Monitoring FB terminal  
VVDET < 0.3V  
RRT = 43kΩ  
ISW = 1A  
-30  
-
2.6  
110  
90  
2.65  
10  
-
-
ISW = -1A  
2.35  
-
1.1  
-
5
-
SW leak current  
VEN= 0V, VIN = 5.5V  
EN terminal H threshold voltage  
EN terminal L threshold voltage  
FC sink current  
FC source current  
SS/DELAY terminal source current  
-
-
0.4  
-
-5  
10  
-10  
4
2
6
VFB :FB terminal voltageVEN :EN terminal voltageVFC :FC terminal voltageVVDET: VDET terminal voltage  
Current capability should not exceed Pd.  
REV. C  
3/4  
BLOCK DIAGRAM  
PIN ASSIGNMENT  
No. Symbol  
Description  
No.  
11  
Symbol  
Description  
Power supply input terminal  
Power supply input terminal  
1
2
SGND Signal GND terminal  
RT  
VDET Output abnormality detection terminal  
PVIN  
PVIN  
PVIN  
SVIN  
Frequency adjustment resistance connection terminal 12  
3
13  
14  
15  
16  
17  
Power supply input terminal  
4
SW  
SW  
Switching output terminal  
Switching output terminal  
Signal system power supply input terminal  
5
SYNCLK Input terminal for external clock synchronization  
6
PGND Power GND terminal  
PGND Power GND terminal  
PGND Power GND terminal  
EN  
NC  
Enable input terminal  
-
7
8
18 SS/DELAY Soft start adjustment capacity connection terminal  
9
SW  
SW  
Switching output terminal  
Switching output terminal  
19  
20  
FC  
FB  
Phase amends terminal  
Feedback terminal  
10  
PACKAGE OUTLINE  
Product number  
BD8641  
1PIN MARK  
Lot No.  
HTSSOP-B20 (UNIT:mm)  
REV. C  
4/4  
NOTE ON USE  
1About the absolute maximum rating  
Attention is brushed off enough to the quality control, it is likely to destroy when the absolute maximum rating such as impressed voltages  
(VCC_IN,DCIN) and ranges (Topr) of the operating temperature as it is exceeded, the mode of breakings of the short or the opening, etc. cannot  
be specified, and examine it in this IC to give physical measures for safety such as fuses when a special mode that exceeds the absolute  
maximum rating is assumed.  
2About the reverse-connection of the power supply connector  
IC might destroy it by reversely connecting the power supply connector. Give measures such as putting the diode between power supply  
terminals of power supply and IC outside for the reverse-touching destruction protection.  
3Power supply line  
Please do measures such as putting the bypass capacitor in power supply-GND nearest pin of this IC as the route of the resurrection current to  
cause the return of the current in which it resurrected it by the counter electromotive force of the coil.  
Please confirm the characteristic of the electrolytic capacitor enough as the capacity omission etc. at the low temperature never happen, and  
decide it.  
4About grand potential  
Any state of operation must become the lowest potential about the potential of the terminal GND. Moreover, confirm whether there is terminal that  
is actually the voltage of GND or less including transients.  
5About the heat design  
Think about permissible loss (Pd) in an actual state of use, and do the heat design with the margin enough.  
6About the short and the miss-installation between terminals  
Note the direction and the miss-registration of IC enough when you install it in the set substrate. IC might destroy it as well as reversely connecting  
the power supply connector when installing it by mistake. Moreover, there is fear of destruction when the foreign body enters between terminals,  
the terminal, the power supply, and grandeur and it is short-circuited.  
7About operation in strong electromagnetic field  
In use in strong electromagnetic field, note that there is a possibility of malfunctioning.  
8About the capacitor during output-GND  
The current charged the capacitor with when VCC is 0V or is GND and is short-circuited when a big capacitor is connected between GND output  
by some factors flows into the output and it is likely to destroy it. Give the capacitor between GND output to 0.1μF or less.  
9About the inspection by the set substrate  
It is likely to suffer stress to IC and discharge electricity every one process when you connect the capacitor with the pin with low impedance when  
inspecting it in the set substrate. Moreover, detach it after connecting after the power supply is turned off without fail when detaching it to G in the  
inspection process, inspecting, and turning off the power supply. n addition, be give the earth to the assembly process as a static electricity  
measures, and careful enough when it transports and you preserve it.  
10About each input terminal  
This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other.  
This P layer and an N layer in each element form a PN junction to construct various parasitic elements.  
For instance, the potential difference operates in resistance as shown in the figure below when resistance and the transistor connect it with the  
terminal and the playground (GND) >(terminal B) joint of PN operates as a parasitic diode in playground (GND) >(terminal A) transistor (NPN). In  
addition, the NPN transistor of parasitism works with N layer of the element of the above-mentioned parasitic diode and the neighborhood and  
others in transistor (NPN). A parasitic element in IC composition is inevitably formed because of the potential relation.  
A parasitic element can operate, the interference with the circuit operation be caused, it malfunction, and, consequently, it cause destruction.  
Therefore, do not do the usage that a parasitic element operates as a voltage that is lower than the playground (GND;P substrate) is impressed to  
the input terminal enough. Moreover, do not impress the voltage to the input terminal when you do not impress the power-supply voltage to IC.  
Give each input terminal to me the voltage below the power-supply voltage or in the guarantee value of an electric characteristic when you  
similarly impress the power-supply voltage.  
Example of IC of simple structure  
11Earth wiring pattern  
If small signal GND and large current GND exist, disperse their pattern. In addition, for voltage change by pattern wiring impedance and large  
current not to change voltage of small signal GND, each ground terminal of IC must be connected at the one point on the set circuit board. As for  
GND of external parts, it is similar to the above-mentioned.  
12Thermal Shut-Down  
When a thermal shutdown operates, the DC/DC converter controller of all Ch is turned off. When a thermal shutdown is released, the DC/DC  
converter controller of all Ch becomes an operation beginning from turning off.  
REV. C  
Appendix  
Notes  
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM  
CO.,LTD.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you  
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM  
upon request.  
Examples of application circuits, circuit constants and any other information contained herein illustrate the  
standard usage and operations of the Products. The peripheral conditions must be taken into account  
when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document. However, should  
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-  
sponsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and examples  
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to  
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-  
sponsibility whatsoever for any dispute arising from the use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic equipment  
or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-  
tronic appliances and amusement devices).  
The Products are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or  
malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard against the  
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as  
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your  
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ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.  
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Copyright © 2009 ROHM CO.,LTD.  
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Appendix-Rev4.0  

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