BD71L3SHFV [ROHM]
罗姆的过电压检测IC采用CMOS工艺,实现了高精度、超低消耗电流。输出形式为Nch漏极开路输出。检测电压为3.83V,滞后宽度为30mV。适合于锂离子电池的充电监视等。;![BD71L3SHFV](http://pdffile.icpdf.com/pdf2/p00367/img/icpdf/BD71L3SHFV_2242118_icpdf.jpg)
型号: | BD71L3SHFV |
厂家: | ![]() |
描述: | 罗姆的过电压检测IC采用CMOS工艺,实现了高精度、超低消耗电流。输出形式为Nch漏极开路输出。检测电压为3.83V,滞后宽度为30mV。适合于锂离子电池的充电监视等。 电池 |
文件: | 总19页 (文件大小:1633K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Datasheet
Voltage Detector (Reset) IC Series
Over Voltage Detector IC
BD71L3SHFV
General Description
Key Specifications
Detection Voltage:
Ultra-Low Current Consumption:
ROHM's Over Voltage Detector ICs are highly accurate,
with ultra-low current consumption feature that uses
CMOS process. The lineup includes N-channel open
drain output with detection voltage of 3.83 V and
hysteresis voltage of 30mV. It is most suitable for
monitoring the charge of a lithium-ion battery.
3.83 V (Typ)
0.7 µA (Typ)
Operation Temperature Range: -40 °C to +125 °C
Package
W(Typ) x D(Typ) x H(Max)
1.60 mm x 1.60 mm x 0.60 mm
HVSOF5:
Features
High Accuracy Detection Voltage
Ultra-low Current Consumption
Nch Open Drain Output
Application
Wide Operating Temperature Range
Very Small, Lightweight and Thin Package
All electronics devices that requires over voltage
detection
Typical Application Circuit
VDD1
VDD2
RL
Microcontroller
RST
BD71L3SHFV
CVDD
(Noise-reduction
Capacitor)
CL
GND
Pin Configuration
HVSOF5
TOP VIEW
GND
5
VDD
4
1
2
3
VOUT SUB VDD
Pin Description
HVSOF5
PIN No.
PIN NAME
Function
1
2
3
4
5
VOUT
SUB
VDD
VDD
GND
Output pin
Substrate
Power supply voltage
Power supply voltage
GND
The SUB pin connect to VDD pin.
○Product structure:Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
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BD71L3SHFV
Block Diagram
VDD
VOUT
Vref
(Note)
(Note)
GND
(Note) Parasitic Diode
Figure 1. BD71L3SHFV Block Diagram
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Absolute Maximum Ratings (Ta=25 °C)
Parameter
Symbol
VDD - GND
VOUT
IO
Tjmax
Limit
-0.3 to +7
GND-0.3 to +7
70
Unit
V
V
mA
°C
°C
Power Supply Voltage
Output Voltage
Nch Open Drain Output
Output Current
Maximum Junction Temperature
+150
Storage Temperature Range
Tstg
-55 to +150
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance(Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
HVSOF5
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
358.2
39
85.3
21
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A(Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70 μm
Layer Number of
Measurement Board
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
4 Layers
Top
Copper Pattern
Bottom
Copper Pattern
74.2 mm x 74.2 mm
Thickness
Copper Pattern
Thickness
Thickness
Footprints and Traces
70 μm
74.2 mm x 74.2 mm
35 μm
70 μm
Recommended Operating Condition
Parameter
Symbol
Topr
Min
-40
Typ
+25
Max
Unit
°C
Operating Temperature
+125
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Electrical Characteristics (Unless otherwise specified Ta=-40 °C to +125 °C, VDD=1.2 V to 6.0 V)
Limit
Typ
3.83
-
Parameter
Symbol
Condition
Ta=25 °C
Ta=-40 to +125 °C
Unit
V
Min
3.792
3.715
-
Max
3.868
3.945
40
RL=470 kΩ
VDD=L→H
Detection Voltage
VDET
Hysteresis Voltage
ΔVDET VDD=L→H→L, RL=470 kΩ
30
mV
µA
µA
V
V
µA
Circuit Current when ON
Circuit Current when OFF
Minimum Operating Voltage
“Low” Output Voltage(Nch)
Output Leak Current
IDD1
IDD2
VDD=VDET+0.2 V
VDD=VDET-0.2 V
-
-
0.60
0.70
-
-
-
2.40
2.80
-
0.3
1.0
VOPL VOL≥0.8 V, RL=470 kΩ (Note 1)
VOL VDD= VDET +0.2 V, ISINK=4.0 mA
1.20
-
-
ILEAK VDD=3.5 V, VDS=6 V
VOUT=VDD→50 %
Delay Time(H→L)
tPHL
-
-
-
-
100
100
µs
µs
RL=100 kΩ, CL=100 pF (Note 1) (Note 2)
VOUT=GND→50 %
RL=100 kΩ, CL=100 pF (Note 1) (Note 2)
Delay Time(L→H)
tPLH
(Note 1) RL: Pull-up resistor connected between VOUT and power supply, CL: Capacitor connected between VOUT and GND.
(Note 2) tPLH: VDD=(VDET-0.5 V) → (VDET+0.5 V)
tPHL: VDD=(VDET+0.5 V) → (VDET-0.5 V)
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Typical Performance Curves
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
BD71L3SHFV
VDD=VDET-0.2 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
BD71L3SHFV
Ta=+125 °C
Ta=+25 °C
VDD=VDET+0.2V
Ta=-40 °C
-40 -25 -10
5
20 35 50 65 80 95 110 125
0
1
2
3
4
5
6
Temperature : Ta[°C]
Supply Voltage : VDD[V]
Figure 3. Circuit Current vs Temperature
Figure 2. Circuit Current vs Supply Voltage
6.0
5.0
4.0
3.0
2.0
1.0
0.0
3.95
3.90
3.85
3.80
3.75
BD71L3SHFV
BD71L3SHFV
VDD=VDET
VDD=VDET-ΔVDET
3.5
3.6
3.7
3.8
3.9
4.0
-40 -25 -10
5
20 35 50 65 80 95 110 125
Supply Voltage : VDD[V]
Temperature : Ta[°C]
Figure 4. Output Voltage vs Supply Voltage
Figure 5. Detection Voltage vs Temperature
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Typical Performance Curves - continued
6.0
5.0
4.0
3.0
2.0
1.0
0.0
6.0
BD71L3SHFV
BD71L3SHFV
5.0
Ta=+125 °C
4.0
3.0
2.0
1.0
0.0
Ta=-40 °C
Ta=+25 °C
Ta=+125 °C
Ta=+25 °C
Ta=-40 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Supply Voltage : VDD[V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Supply Voltage : VDD[V]
Figure 6. I/O Characteristics
Figure 7. I/O Characteristics
(VOUT Pull-up to 5 V, RL=470 kΩ)
(VOUT Pull-up to VDD, RL=470 kΩ)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
BD71L3SHFV
BD71L3SHFV
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature : Ta[°C]
Temperature : Ta[°C]
Figure 9. Minimum Operating Voltage vs Temperature
Figure 8. Minimum Operating Voltage vs Temperature
(VOUT Pull-up to VDD, RL=470 kΩ)
(VOUT Pull-up to 5 V, RL=470 kΩ)
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Typical Performance Curves - continued
40
40
30
20
10
0
BD71L3SHFV
BD71L3SHFV
30
20
10
0
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature : Ta[°C]
Temperature : Ta [°C]
Figure 10. Delay Time (L→H) vs Temperature
Figure 11. Delay Time (H→L) vs Temperature
120
100
80
60
40
20
0
BD71L3SHFV
Ta=+125 °C
Ta=+25 °C
Ta=-40 °C
0.0
5.0
10.0
15.0
20.0
"Low" Output Current : ISINK[mA]
Figure 12. “Low” Output Voltage vs “Low” Output Current
(VDD=4.0 V)
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BD71L3SHFV
Application Information
Operation Description
Consider the detection and release voltage are used as the threshold voltages. When the voltage applied to VDD reaches
the respective threshold voltage, VOUT level will change from "H" to "L" and from “L" to "H". Since the output pattern in
BD71L3SHFV is an open-drain system, a pull-up resistor has to be connected to VDD or other power supply.
(The output (VOUT) “H” voltage in this case becomes VDD or other power supply voltage.)
Timing Waveform
The following shows the relationship between the input voltage VDD and the output voltage VOUT when the power supply
voltage VDD is swept up and swept down.
VDD
RL
VDD
VOUT
Vref
CVDD
CL
GND
Figure 13. BD71L3SHFV Set-up Diagram
VDD
VDET
VDET-ΔVDET
VOPL: <1.2 V
t
1
2
3
4
5
6
3
4
5
6
3
1
VOUT
t
undefined
tPHL
tPLH
tPLH
tPHL
undefined
tPLH
Figure 14. Timing Diagram
Operating Conditions Explanation
1. When the power supply turns on, the Output Voltage (VOUT) becomes unstable until VDD exceeds the Minimum
Operating Voltage (VOPL).
2. When VDD exceeds VOPL, delay time (tPLH) happens, then VOUT changes to “H”. However, this change depends on the
VOUT rise time when the power supply starts up, so thorough confirmation is required.
3. VOUT keeps “H”.
4. When VDD exceeds the Detection Voltage (VDET), delay time (tPHL) happens, then VOUT switches from “H” to “L”.
5. VOUT keeps “L”.
6. When VDD drops below Release Voltage (VDET-ΔVDET), delay time (tPLH) happens, then VOUT switches from “L” to “H”.
Since this IC have hysteresis width is 30 mV(Typ), when VDD fluctuates near VDET, VOUT switches repeatedly with
“H”→“L”→“H”→ “L”. As a counter measure, it is recommended to use capacitor (CVDD). Perform sufficient evaluation before
deciding the capacitor value since the capacitance needs to be adjusted according to the amount of power supply voltage
fluctuation.
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Application Information – continued
Bypass Capacitor for Noise Rejection
For the stable operation of the IC, put capacitor between the VDD and GND pin and connect it closer to the pin as possible.
When using extremely big capacitors, the transient response speed becomes slow so please thoroughly check.
External Parameters
The recommended value of pull-up resistance value is 50 kΩ to 1 MΩ. Since the changes are brought by many factors
(circuit configuration, board layout, etc.) when using, ensure that confirmation of the real function was carried out.
In addition, this IC has high impedance design. So depending on the condition of use, this may be affected by small leak
current due to the uncleanness of PCB surface. For example, if a 10 MΩ leakage is assumed between the VOUT and GND
pin, it is recommended to set the value of pull up resistor less than or equal to 1/10 of the impedance of assumed leakage
route.
Behavior at less than the Operating Voltage Limit
When VDD falls less than the minimum operating voltage, output will be undefined. When output is connected to pull-up
voltage, output will be equivalent to pull-up voltage.
Precautions when Steep Power Supply Rise
In case of a steep power supply rise, the output may toggle to “Low” once like as shown in Figure 15. This is due to the
undefined output when the supply is less than the minimum operating voltage of the IC. When this waveform affects the
application, make the rise time slower by attaching capacitor to VDD (CVDD). As a reference value, the recommended VDD
Rise Time is 200 μs or more.
VDD
VDET
VOPL: <1.2 V
t
VOUT
t
Figure 15. Steep Power Supply Rise Response
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BD71L3SHFV
Application Examples
(1) Examples of common application circuits
CASE1: If the power supply of the microcontroller (VDD2
)
VDD1
VDD2
differs from the power supply of the detection (VDD1),
use the load resistance RL connected to VDD2 in the
output as shown in Figure 16.
RL
Microcontroller
RST
BD71L3SHFV
CVDD
CASE2: If the power supply of the microcontroller is the
same as the power supply of the detection (VDD1), use
the RL connected to VDD1
.
CL
When connecting a capacitor CL for noise elimination
and for setting the output delay time to the VOUT pin
(reset signal input pin of microcontroller), the waveform
is dull during rising and falling of the output so use after
confirmation that there is no problem.
GND
Figure 16. Examples of common application circuits
(2) The following is an example of an OR connection between two types of detection voltage resets the microcontroller.
VDD1
VDD2
VDD3
RL
Microcontroller
RST
BD71Lxx
No.1
BD71Lxx
No.2
CVDD
CVDD
CL
GND
Figure 17. OR Circuit Connection Application
There are multiple power supply in the system, and in case monitoring for each independent power supply VDD1 and VDD2
and reset of micro-controller is required, an application where output “H” voltage is aligned to the microcontroller power
supply VDD3 is possible by connecting OR application and pull-up at random voltage (VDD3) such as shown in Figure 17.
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Application Examples – continued
(3) Examples of the power supply with resistor dividers
In some applications, the power supply voltage of an IC comes from a resistor divider circuit. An inrush current will flow into
the circuit when the output level switches from “Low” to “High” or vice versa. Inrush current is a sudden surge of current that
flows from the power supply (VDD) to ground (GND) as the output logic changes its state. This current flow may cause
malfunction in the systems operation such as output oscillations, etc.
V1
IDD
RA
IDD
VDD
Inrush Current
RL
RB
BD71L3SHFV
GND
VOUT
CVDD
CL
VDD
0
VDET
Figure 18. Resistor Divider Connection Application
Figure 19. Current Consumption vs VDD Voltage
A voltage drop [Inrush current (IDD)] x [input resistor (RA)] is caused by the inrush current when the output switches from
"H"→"L", and causes the input voltage to drop. When the input voltage drops and falls below the release voltage, the output
will switch from "L"→"H". At this time, the inrush current stops flowing through at output “H”, and the voltage drop
disappears. As a result, the output switches from "H"→"L", which again causes the inrush current to flow and the voltage to
drop. This operation repeats and leads to oscillation.
In case resistor divider is not use and only use RA, same response will happen.
(Attention)
Since there is small hysteresis width, it is not advisable to use it in circuit that connects the resistance to the input side.
When using it, set the circuit configuration and constants in the actual application after a thorough evaluation is carried out.
250
BD71L3SHFV
225
200
175
150
125
100
75
50
25
0
4.0
4.5
5.0
5.5
6.0
Supply Voltage High : VDDH[V]
Figure 20. Open Drain Output Inrush Current
(VOUT Pull-up to VDD, RL=100 kΩ, VDD=1 V→VDDH, Ta=25 °C)
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BD71L3SHFV
Considerations on Input and Output Capacitor
It is suggested to use input and output capacitors which is positioned as near as possible to the pins. The capacitor between
the input pin and GND is effective when the power supply impedance increases or when the wiring is long. A large capacitor
at the output improves stability and output load characteristics. Before implementation, check the state of mounting. In
addition, the ceramic capacitor deviates in general and has temperature characteristics and AC bias characteristics.
Furthermore, depending on the usage, the capacitance value decreases over time. It is recommended that ceramic
capacitor to use is decided after gathering detailed data information by consulting brand manufacturers.
10 V withstand voltage
B1characteristics
GRM188B11A105KA61D
10
0
10 V withstand voltage
B characteristics
-10
6.3 V withstand voltage
B characteristics
-20
-30
10 V withstand voltage
-40
F characteristics
-50
-60
4 V withstand voltage
X6S characteristics
-70
-80
-90
-100
0
1
2
3
4
DC Bias Voltage [V]
Figure 21. Ceramic Capacitance Change - DC Bias Properties
(Characteristic example)
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Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
6. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
8. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
9. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
10. Regarding the Input Pin of the IC
In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The operation
of these parasitic elements can result in mutual interference among circuits, operational faults, or physical damage.
Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin lower
than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when no power
supply voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins have
voltages within the values specified in the electrical characteristics of this IC.
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
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BD71L3SHFV
Ordering Information
B
D
7
1
L
3
S
H
F
V
-
T R
Package
HFV: HVSOF5
Packing and Forming Specification
TR: Embossed tape and reel
Marking Diagram
HVSOF5(TOP VIEW)
Part Number Marking
LOT Number
A T
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Physical Dimension and Packing Information
Package Name
HVSOF5
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BD71L3SHFV
Revision History
Date
Revision
001
Changes
22.Aug.2018
New Release
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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BD7220FV-C
BD7220FV-C是适用于大电流检测应用的库仑计IC。不仅内置16位ΔΣADC,还内置了高精度运算放大器和电流累加逻辑电路,因此可以高精度地计算电流累加值。电流检测输入支持分流电阻器和电流输出型电流传感器,并且采用SPI作为通信I/F。高精度测量所需的校准可以仅使用SPI命令执行,因此只使用本IC即可获取预测剩余电量所需的电流累加信息。
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