BD2310G [ROHM]
BD2310G是能高速驱动外接Nch-FET和IGBT的1ch低边栅极驱动器。采用SSOP5的小型封装，可提供4A的输出电流。设有从外部施加输入逻辑电源电压的VREF引脚，可用范围为2.0V~5.5V。作为保护功能，在VCC-GND之间搭载低输入误动作防止电路（UVLO）。;
| 型号： | BD2310G |
| 厂家： | 
ROHM |
| 描述： | BD2310G是能高速驱动外接Nch-FET和IGBT的1ch低边栅极驱动器。采用SSOP5的小型封装，可提供4A的输出电流。设有从外部施加输入逻辑电源电压的VREF引脚，可用范围为2.0V~5.5V。作为保护功能，在VCC-GND之间搭载低输入误动作防止电路（UVLO）。 栅极驱动 双极性晶体管 驱动器 |
| 文件： | 总18页 (文件大小：1254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
1ch 4 A High Speed Low-side Gate Driver
BD2310G
General Description
Key Specifications
BD2310G is 1ch Low-side Gate Driver, which can drive
external Nch-FET and IGBT at high speed.
BD2310G can supply output current 4 A at small package
SSOP5.
This driver has the VREF pin for external input logic
supply voltage and this range is 2.0 V to 5.5 V. As a
protection function, the driver includes an Undervoltage
Lockout (UVLO) between VCC and GND.
Output Voltage Range:
Input Logic Voltage Range:
Output Current IO+/IO-:
Turn-on / Turn-off Delay Time: 15 ns / 15 ns (Typ)
Operating Temperature Range: -40 °C to +125 °C
4.5 V to 18 V
2.0 V to 5.5 V
4 A / 4 A (Typ)
Package
SSOP5
W (Typ) x D (Typ) x H (Max)
2.9 mm x 2.8 mm x 1.25 mm
Features
Gate Drive Voltage Range 4.5 V to 18 V
Built-in Undervoltage Lockout (UVLO) between VCC
and GND
Input Logic Voltage Range 2.0 V to 5.5 V
In-phase Output with Input signal
Small Package SSOP5
Applications
MOSFET / IGBT Driver Applications
DC / DC Converters
Motor Control
Typical Application Circuit
Load
VCC
GND
IN+
OUT
VCC
Low-side
VREF
VREF
PWM
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
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BD2310G
Pin Configuration
(TOP VIEW)
5 OUT
VCC 1
GND 2
4 VREF
3
IN+
Pin Descriptions
Pin No.
Pin Name
VCC
Function
1
2
3
4
5
Supply voltage
Ground
GND
IN+
Logic input
VREF
OUT
Logic supply voltage
Gate drive output
Block Diagram
VREF
IN+
VCC
OUT
GND
LEVEL
SHIFT
DRV
VCC
UVLO
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BD2310G
Absolute Maximum Rating (Ta = 25 °C)
Parameter
Symbol
VCC
VIN
Rating
-0.3 to +20
Unit
V
Supply Voltage
Logic Input Voltage
-0.3 to VREF + 0.3
-0.3 to +6.0
-0.3 to VCC + 0.3
150
V
Logic Supply Voltage
Output Voltage
VREF
V
VOUT
Tjmax
Tstg
V
Maximum Junction Temperature
°C
Storage Temperature Range
-55 to +150
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance (Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
SSOP5
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
376.5
40
185.4
30
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A (Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
70 μm
Footprints and Traces
Layer Number of
Measurement Board
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
4 Layers
Top
Copper Pattern
Bottom
Copper Pattern
74.2 mm x 74.2 mm
Thickness
70 μm
Copper Pattern
Thickness
35 μm
Thickness
70 μm
Footprints and Traces
74.2 mm x 74.2 mm
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BD2310G
Recommended Operating Conditions
Parameter
Symbol
VCC
VIN
Min
4.5
0
Typ
12
-
Max
18
Unit
V
Supply Voltage
Logic Input Voltage
Logic Supply Voltage
Output Voltage
VREF
5.5
V
VREF
VOUT
Topr
2.0
0
3.3
-
V
VCC
+125
V
Operating Temperature
-40
+25
°C
Electrical Characteristics (Unless otherwise specified VCC = 12 V, VREF = 3.3 V, Ta = 25 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Circuit Current
VCC Static Supply Current
VREF Static Supply Current
Undervoltage Lockout (UVLO)
Detect Threshold Voltage
Reset Threshold Voltage
Hysteresis Voltage
ICC
-
-
35
70
µA
µA
VIN = 0 V
IREF
4.5
9.0
VIN = 0 V
VUV-
VUV+
2.9
3.1
-
3.6
3.8
0.2
4.3
4.5
-
V
V
V
VUV_HYS
Input
Logic “0” Threshold Voltage
Logic “1” Threshold Voltage
“0” Input Circuit Current
“1” Input Circuit Current
Output
VIN_L
VIN_H
IIN_L
0.2VREF
0.3VREF
-
0.6VREF
1
V
V
-
-
-
0.5VREF
-
µA
µA
VIN = 0 V
IIN_H
33
50
VIN = VREF
VOUT = 0 V
Pulse Width ≤ 1 µs
OUT-VCC
OUT-GND
IO+
IO-
-
-
-
-
-
-
-
4
4
-
A
Output Short Circuit
Pulsed Current
VOUT = VCC
Pulse Width ≤ 1 µs
-
A
Turn-on Propagation Delay
Turn-off Propagation Delay
Rise Time
tON
tOFF
tR
15
15
10
10
-
30
30
20
20
50
ns
ns
ns
ns
ns
CL = 1000 pF
CL = 1000 pF
Fall Time
tF
Minimum Input Pulse Width
tINMIN
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BD2310G
Typical Performance Curves
(Unless otherwise specified VCC = 12 V, VREF = 3.3 V, Ta = 25 °C)
5.0
4.5
60
50
40
30
20
10
0
VUV+
4.0
3.5
VUV-
3.0
2.5
2.0
-50 -25
0
25 50 75 100 125
0
2
4
6
8
10 12 14 16 18 20
Ambient Temperature : Ta[ºC]
Input Supply Voltage : VCC[V]
Figure 1. VCC Undervoltage Lockout vs Ambient
Temperature
Figure 2. VCC Static Supply Current vs Input
Supply Voltage
3.0
60
VREF = 3.3 V
VCC = 12 V
2.5
50
40
30
20
10
0
VIN_H
2.0
1.5
1.0
VIN_L
0.5
0.0
-50 -25
0
25 50 75 100 125
-50 -25
0
25
50
75 100 125
Ambient Temperature : Ta[ºC]
Ambient Temperature : Ta[ºC]
Figure 4. Logic ”0” / ”1” Threshold Voltage vs
Ambient Temperature
Figure 3. VCC Static Supply Current vs Ambient
Temperature (VCC = 12 V)
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BD2310G
Typical Performance Curves – continued
(Unless otherwise specified VCC = 12 V, VREF = 3.3 V, Ta = 25 °C)
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VIN = 3.3 V
0
1
2
3
4
5
6
-50 -25
0
25
50
75 100 125
Logic Input Voltage : VIN[V]
Ambient Temperature : Ta[ºC]
Figure 6. Input Circuit Current vs Ambient
Temperature (VIN = 3.3 V)
Figure 5. Input Circuit Current vs Logic Input Voltage
12
25
20
10
tR
8
tON
tF
15
tOFF
6
4
2
0
10
5
0
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125
Ambient Temperature : Ta[ºC]
Ambient Temperature : Ta[ºC]
Figure 7. Rise / Fall Time vs Ambient Temperature
Figure 8. Turn-on / Turn-off Propagation Delay vs
Ambient Temperature
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BD2310G
Timing Chart
VIN_H
VIN_L
tON
VIN_H
VIN_L
IN+
tOFF
tF
tR
90%
10%
90%
OUT
10%
Figure 9. Timing Chart
VCC
VUV_HYS
VUV+
VUV-
OUT
IN+
Figure 10. UVLO Timing Chart
Static Logic Function Table
VCC
VREF
X(Note 5)
< 2 V(Note 6)
≥ 2 V
IN+
X(Note 5)
OUT
≤ VUV+
≥ 4.5 V
≥ 4.5 V
≥ 4.5 V
L
L(Note 6)
L
X(Note 5)
L
≥ 2 V
H
H
(Note 5) X is not depend on the value.
(Note 6) VREF has the threshold between 0 V to 2 V. It does not definitely become OUT = L below 2 V.
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BD2310G
Application Components Selection Method
(1) Gate Resistor
The gate resistor RG(ON/OFF) is selected to the switching
speed of the power device. The switching time (tSW) is
defined as the time spent to reach the end of the plateau
voltage, so the turn-on gate resistor RG(ON) can be
calculated using the following formulas.
VCC
Cgd
Cgs
RPON
RG(ON)
퐼퐺 = 푄
[1]
[2]
+푄
푔푠
푔푑
OUT
푡
푆푊
RNOFF
푉
퐶퐶
−푉
ꢃ
ꢁ푆(ꢂ퐻)
푅푇푂푇퐴퐿(푂푁) = 푅푃푂푁 ꢀ 푅퐺(푂푁)
=
RG(OFF)
ꢁ
GND
BD2310G
ꢇ푄 +푄 ꢈꢇꢉ
+ꢉ
ꢈ
ꢁ(ꢋꢌ)
푄
푔푠
+푄
푔푑
푔푠
푔푑
ꢊꢋꢌ
ꢄꢅꢆ
=
=
[3]
ꢃ
ꢇ푉 −푉
퐶퐶
ꢈ
ꢁ
ꢁ푆(ꢂ퐻)
Figure 11. Gate Driver Equivalent Circuit
Where:
퐼퐺 is the gate current of the power device.
ꢍꢎꢏ is the charge between gate and source of the power device.
ꢍꢎꢐ is the charge between gate and drain of the power device.
ꢑ퐺ꢅ(푇ꢒ) is the threshold voltage of the power device.
Qgs
VDS
Qgd
The turn-on gate resistance can be changed to control
output slew rate (dVD/dt). The slew rate of the power device
is determined by the following equation.
ꢐ푉
ꢃ
ꢁ
퐷
=
[4]
dVD/dt
VGS
ꢐ푡
ꢓ
푟푠푠
where:
ID
ꢔꢕꢏꢏ is the feedback capacitance.
The gate resistance is determined as follows by
substituting equation [4] into equation [2].
푉
−푉
ꢁ푆(ꢂ퐻)
퐶퐶
푅푇푂푇퐴퐿(푂푁) = 푅푃푂푁 ꢀ 푅퐺(푂푁)
=
[5]
[6]
푑ꢖ
퐷
ꢓ
×
푑ꢗ
푟푠푠
tSW
푉
퐶퐶
−푉
Figure 12. Gate Charge Transfer Characteristics
푅퐺(푂푁)
=
ꢁ푆(ꢂ퐻) ꢘ 푅푃푂푁
푑ꢖ
퐷
ꢓ
푟푠푠
×
푑ꢗ
When other power devices are turned on, current flows in the power device which is off through Cgd. At this point, the
gate resistance (RG(off)) should be set so that the gate voltage does not exceed the threshold of the power device and
turn on the power device itself.
ꢐ푉
퐷
ꢑ퐺ꢅ(푇ꢒ) ≥ ꢇ푅푁푂퐹퐹 ꢀ 푅퐺 푂퐹퐹)ꢈ × 퐼 = ꢇ푅푁푂퐹퐹 ꢀ 푅퐺(푂퐹퐹)ꢈ × ꢔꢎꢐ
×
[7]
[8]
(
퐺
ꢐ푡
푉
(
)
ꢁ푆 ꢂ퐻
푅퐺(푂퐹퐹)
≤
퐷 ꢘ 푅푁푂퐹퐹
푑ꢖ
ꢓ
푔푑
×
푑ꢗ
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BD2310G
Application Components Selection Method – continued
(2) Input Capacitor
A low-ESR ceramic capacitor should be used near the VCC pin and the VREF pin to reduce input ripple voltage. In
considering of the DC bias characteristic, it is recommended 0.5 µF or more between VCC and GND, 8 nF or more
between VREF and GND.
PCB Layout
The voltage of VCC pin may be risen by the parasitic inductance of the PCB and the bonding wire in the IC.
The mechanism by which VCC voltage rises is Figure 13.
(1) When the signal with short pulse width is input as an input signal, it is turned off in the state that Pch-FET of the final
stage is turned on and flows current.
(2) When Pch-FET is turned off while current is flowing, VCC voltage is risen by the parasitic inductance.
When VCC voltage is risen and over absolute maximum ratings, it can damage the IC.
To reduce the rising of VCC voltage, please locate a ceramic capacitor which is low-ESR near the VCC pin and the GND pin,
and connect it so that parasitic inductance LVCC and LGND in the PCB becomes small. It is recommended 3 nH or less each
LVCC and LGND
.
(1)
(2)
Parasitic inductance of the bonding
wire in the IC and the PCB
The voltage of VCC pin is rose
by parasitic inductance
VCC
LVCC
VCC
LVCC
ON
OFF
ON
OUT
OUT
GND
OFF
LGND
LGND
GND
Input capacitor
Figure 13. Mechanism of Overshoot
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BD2310G
I/O Equivalence Circuits
Pin
No.
Pin
Name
Pin
No.
Pin
Name
Pin Equivalence Circuit
Pin Equivalence Circuit
VCC
VREF
IN+
3
4
IN+
VREF
1
5
VCC
OUT
OUT
GND
GND
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BD2310G
Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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BD2310G
Operational Notes – continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 18. Example of Monolithic IC Structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
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BD2310G
Ordering Information
B D 2
3
1
0
G
-
TR
Part Number
Package
G: SSOP5
Packaging and forming specification
TR: Embossed tape and reel
Marking Diagram
SSOP5 (TOP VIEW)
Part Number Marking
LOT Number
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BD2310G
Physical Dimension and Packing Information
Package Name
SSOP5
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BD2310G
Revision History
Date
Revision
001
Changes
26.Mar.2020
New Release
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号：
BD2320EFJ-LA
本产品面向工业设备市场、可保证长期稳定供货。是适合这些用途的产品。BD2320EFJ-LA是可驱动使用阴极负载方式的外接Nch-FET的100V耐压高边/低边栅极驱动器。内置100V耐压自举二极管，输入逻辑电源电压可使用3.3V及5.0V两种。作为保护功能，高边及低边搭载低电压误动作防止电路(UVLO)。
ROHM
BD2320UEFJ-LA
该产品是能够保证向工业设备市场长期供应的产品，而且是非常适用于这些应用领域的产品。BD2320UEFJ-LA是一款100V耐压的高低边栅极驱动器，可驱动使用自举方式的外置Nch-FET。该产品内置100V耐压的自举二极管，输入逻辑电源电压支持3.3V和5.0V。作为保护功能，高边和低边都配有欠压锁定电路（UVLO）。本IC是从系列型号BD2320EFJ-LA以提高生产效率为目的变更生产线的型号，在新项目选型时，建议选择该型号，在技术规格书中的保证特性并没有差异。此外，由于文档和设计模型等也没有差异，因此除非另有说明，ROHM将公开BD2320EFJ-LAE2的数据。
ROHM
BD2327N50100AHF
RF Transformer, 2300MHz Min, 2700MHz Max, CHIP, HALOGEN FREE AND ROHS COMPLIANT
ANAREN
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