2SD2211Q [ROHM]
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SOT-89 ; 晶体管| BJT | NPN | 160V V（ BR ） CEO | 1.5AI （ C） | SOT- 89\n
| 型号： | 2SD2211Q |
| 厂家： | 
ROHM |
| 描述： | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SOT-89
|
| 文件： | 总1页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features
!External dimensions (Units : mm)
CEO =
1) High breakdown voltage.(BV 160V)
2) Low collector output capacitance.
2SD2211
4.0
2.5
1.0
0.5
(Typ. 20pF at V
CB =
10V)
(
)
1
T =
Z
3) High transition frequency.(f 80MH )
(
)
2
3
4) Complements the 2SB1275 / 2SB1236A.
(
)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : MPT3
EIAJ : SC-62
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
160
160
5
Unit
2SD1918
VCBO
VCEO
VEBO
V
V
5.5
0.9
1.5
V
1.5
3
A(DC)
A(Pulse)
W
Collector current
2SD1857A
Collector
I
C
∗1
∗2
1
C0.5
2SD2211
2
P
C
power
dissipation
W
∗3
1
0.8Min.
2SD1918
1.5
10
W(Tc=25°C)
2.5
Junction temperature
Storage temperature
150
°C
°C
Tj
9.5
Tstg
−55 ∼+150
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : CPT3
EIAJ : SC-63
∗
∗
∗
1
2
3
Single pulse Pw=100ms
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger
When mounted on a 40 x 40 x 0.7mm ceramic board.
.
2SD1857A
6.8
2.5
!Packaging specifications and hFE
0.65Max.
Type
2SD2211 2SD1918 2SD1857A
0.5
Package
MPT3
QR
DQ*
CPT3
Q
ATV
PQ
( )
(
1
) ( )
3
hFE
2
Marking
Code
Basic ordering unit (pieces)
−
TL
−
2.54 2.54
1.05
0.45
T100
1000
TV2
2500
Taping specifications
2500
(1) Emitter
(2) Collector
(3) Base
Denotes hFE
*
ROHM : ATV
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
Min.
160
160
5
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
I
I
I
C
C
E
=
=
50µA
−
−
V
1mA
−
−
V
=
50µA
I
CBO
−
−
1
µA
µA
V
V
CB
=
=
120V
I
EBO
−
−
1
V
EB
4V
Emitter cutoff current
V
CE(sat)
BE(sat)
−
−
2
I
I
C
/I
B
=
1A/0.1A
1A/0.1A
∗
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
−
−
1.5
390
270
−
V
C
/I
B
=
∗
2SD2211,2SD1918
2SD1857A
120
82
−
−
−
DC current
transfer ratio
h
FE
V
CE/IC = 5V/0.1A
−
−
f
T
80
20
MHz
pF
V
V
CE
CB
=
5V , I
E
= −0.1A , f 30MHz
=
Transition frequency
Output capacitance
Cob
−
−
=
10V , I
E
=
0A , f = 1MHz
∗
Measured using pulse current.
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