2SD2114KT146VW [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,;型号: | 2SD2114KT146VW |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 晶体 小信号双极晶体管 光电二极管 放大器 |
文件: | 总4页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K
Features
Dimensions (Unit : mm)
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
2SD2114K
2.9 0.2
+0.2
−0.1
1.1
1.9 0.2
0.8 0.1
0.95 0.95
(2)
(1)
0∼0.1
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
(3)
+0.1
0.15
+0.1
−0.06
0.4
−0.05
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol: BB
∗
Structure
Epitaxial planar type
NPN silicon transistor
Denotes hFE
∗
Absolute maximum ratings (Ta=25C)
Symbol
Limits
25
Unit
Parameter
VCBO
VCEO
VEBO
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
20
12
V
0.5
1
A(DC)
A(Pulse)
I
C
Collector current
∗
Collector power dissipation
Junction temperature
P
C
0.2
150
W
°C
°C
Tj
Tstg
−55 to +150
Storage temperature
Single pulse Pw=100ms
∗
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
25
20
12
−
I
I
I
C
=10μA
=1mA
BVCEO
BVEBO
−
−
V
C
−
−
V
E
=10μA
CB=20V
EB=10V
I
CBO
−
0.5
0.5
0.4
2700
−
μA
μA
V
V
V
Emitter cutoff current
I
EBO
−
−
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
VCE(sat)
−
0.18
−
IC
/I
CE=3V, I
CE=10V, I
CB=10V, I
=1mA, Vi=100mV(rms), f=1kHz
B
=500mA/20mA
=10mA
= −50mA, f=100MHz
=0A, f=1MHz
h
FE
820
−
−
V
V
V
C
350
8.0
0.8
MHz
pF
Ω
E
∗
f
T
Output capacitance
Cob
−
−
E
Output On-resistance
Ron
−
−
IB
Measured using pulse current
∗
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○ 2012 ROHM Co., Ltd. All rights reserved.
2SD2114K
Data Sheet
Packaging specifications and hFE
Package
Code
Taping
T146
Basic ordering
3000
Type
hFE
unit (pieces)
2SD2114K
VW
hFE values are classified as follows :
Item
V
W
hFE
820 to 1800 1200 to 2700
Electrical characteristic curves
1000
800
600
400
2.0
1000
500
1.8mA 2.0mA
1.6mA
1.4mA
Ta=25°C
V
CE=3V
1.6μA
Measured using
pulse current.
2.0μA
1.2mA
1.6
1.4μA
Ta=100°C
25°C
200
100
50
1.8μA
1.0mA
0.8mA
1.2μA
−25°C
1.2
1.0μA
0.6mA
0.4mA
0.8μA
20
10
5
0.8
0.6μA
0.2mA
0.4μA
200
0
0.4
Ta=25°C
0.2μA
2
1
Measured using
pulse current.
IB=0mA
IB=0
0
0
0
2
4
6
8
10
0.1
0.2
0.3
0.4
0.5
0
0.2 0.4 0.6
0.8 1.0 1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter output
Fig.1 Grounded emitter output
Fig.3 Grounded emitter propagation
characteristics
characteristics (
)
characteristics (
)
10000
5000
10000
5000
2000
1000
500
V
CE=3V
Ta
=
25°C
Ta=25°C
Measured using
pulse current.
Measured using
pulse current.
Measured using
pulse current.
VCE=5V
2000
1000
500
2000
1000
500
200
Ta=100°C
25°C
100
50
3V
−25°C
1V
200
100
200
100
50
I
C
/I
B
=100
50
25
10
20
50
10
5
20
10
20
10
2
1
2
5
10 20 50 100 200 5001000
1
2
5
10 20
50 100 200 5001000
(mA)
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (
Fig.4 DC current gain vs. collector
current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current (
)
)
2000
1000
500
10000
5000
10000
5000
IC/IB=25
Ta
Pulsed
=
25°C
lC/lB=10
Measured using
pulse current.
Measured using
pulse current.
I
C
/I
B
=10
Ta=−25°C
25°C
25
2000
1000
500
2000
1000
500
50
100°C
100
200
100
50
Ta=100°C
25°C
200
100
200
100
50
−25°C
20
10
5
50
20
10
20
10
2
1
2
5
10 20
50 100 200 5001000
1
2
5
10 20 50 100 200 500 1000
(mA)
1
2
5
10 20 50 100 200 5001000
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I (mA)
C
Fig.7 Collector-emitter saturation
voltage vs. collector current (
Fig.8 Base-emitter saturation
voltage vs. collector current (
Fig.9 Base-emitter saturation voltage
vs. collector current (
)
)
)
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○ 2012 ROHM Co., Ltd. All rights reserved.
2SD2114K
Data Sheet
100
50
1000
500
10000
5000
Ta=25°C
Ta
=
25°C
10V
Ta
1MHz
0A
=25°C
f=1kHz
VCE
=
f=
E
Vi=100mV(rms)
Measured using
pulse current.
I =
RL=1kΩ
200
100
50
2000
1000
500
20
10
5
200
100
50
2
1
20
10
5
0.5
2
1
20
10
0.2
0.1
−1 −2
−5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : I
0.1 0.2 0.5
1
2
5
10 20
50 100
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASE CURRENT : I
B
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
Fig.11 Collector output capacitance
vs. collector-base voltage
Fig.12 Output-on resistance vs.
base current
Ron measurement circuit
RL=1kΩ
Input
vi
I
B
Output
v
V
1kHz
100mV(rms)
0
v
vi−v0
0
Ron=
×RL
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2012.01 - Rev.C
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○ 2012 ROHM Co., Ltd. All rights reserved.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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