2SD2114KT146VW [ROHM]

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,;
2SD2114KT146VW
型号: 2SD2114KT146VW
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,

晶体 小信号双极晶体管 光电二极管 放大器
文件: 总4页 (文件大小:112K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
High-current Gain Medium Power Transistor (20V, 0.5A)  
2SD2114K  
Features  
Dimensions (Unit : mm)  
1) High DC current gain.  
hFE = 1200 (Typ.)  
2) High emitter-base voltage.  
VEBO =12V (Min.)  
2SD2114K  
2.9 0.2  
+0.2  
0.1  
1.1  
1.9 0.2  
0.8 0.1  
0.95 0.95  
(2)  
(1)  
00.1  
3) Low VCE (sat).  
VCE (sat) = 0.18V (Typ.)  
(IC / IB = 500mA / 20mA)  
(3)  
+0.1  
0.15  
+0.1  
0.06  
0.4  
0.05  
All terminals have same dimensions  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
Abbreviated symbol: BB  
Structure  
Epitaxial planar type  
NPN silicon transistor  
Denotes hFE  
Absolute maximum ratings (Ta=25C)  
Symbol  
Limits  
25  
Unit  
Parameter  
VCBO  
VCEO  
VEBO  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
20  
12  
V
0.5  
1
A(DC)  
A(Pulse)  
I
C
Collector current  
Collector power dissipation  
Junction temperature  
P
C
0.2  
150  
W
°C  
°C  
Tj  
Tstg  
55 to +150  
Storage temperature  
Single pulse Pw=100ms  
Electrical characteristics (Ta=25C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
BVCBO  
25  
20  
12  
I
I
I
C
=10μA  
=1mA  
BVCEO  
BVEBO  
V
C
V
E
=10μA  
CB=20V  
EB=10V  
I
CBO  
0.5  
0.5  
0.4  
2700  
μA  
μA  
V
V
V
Emitter cutoff current  
I
EBO  
Collector-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
VCE(sat)  
0.18  
IC  
/I  
CE=3V, I  
CE=10V, I  
CB=10V, I  
=1mA, Vi=100mV(rms), f=1kHz  
B
=500mA/20mA  
=10mA  
= −50mA, f=100MHz  
=0A, f=1MHz  
h
FE  
820  
V
V
V
C
350  
8.0  
0.8  
MHz  
pF  
Ω
E
f
T
Output capacitance  
Cob  
E
Output On-resistance  
Ron  
IB  
Measured using pulse current  
www.rohm.com  
2012.01 - Rev.C  
1/3  
c
2012 ROHM Co., Ltd. All rights reserved.  
2SD2114K  
Data Sheet  
Packaging specifications and hFE  
Package  
Code  
Taping  
T146  
Basic ordering  
3000  
Type  
hFE  
unit (pieces)  
2SD2114K  
VW  
hFE values are classified as follows :  
Item  
V
W
hFE  
820 to 1800 1200 to 2700  
Electrical characteristic curves  
1000  
800  
600  
400  
2.0  
1000  
500  
1.8mA 2.0mA  
1.6mA  
1.4mA  
Ta=25°C  
V
CE=3V  
1.6μA  
Measured using  
pulse current.  
2.0μA  
1.2mA  
1.6  
1.4μA  
Ta=100°C  
25°C  
200  
100  
50  
1.8μA  
1.0mA  
0.8mA  
1.2μA  
25°C  
1.2  
1.0μA  
0.6mA  
0.4mA  
0.8μA  
20  
10  
5
0.8  
0.6μA  
0.2mA  
0.4μA  
200  
0
0.4  
Ta=25°C  
0.2μA  
2
1
Measured using  
pulse current.  
IB=0mA  
IB=0  
0
0
0
2
4
6
8
10  
0.1  
0.2  
0.3  
0.4  
0.5  
0
0.2 0.4 0.6  
0.8 1.0 1.2  
1.4  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
BASE TO EMITTER VOLTAGE : VBE (V)  
Fig.2 Grounded emitter output  
Fig.1 Grounded emitter output  
Fig.3 Grounded emitter propagation  
characteristics  
characteristics (  
)
characteristics (  
)
10000  
5000  
10000  
5000  
2000  
1000  
500  
V
CE=3V  
Ta  
=
25°C  
Ta=25°C  
Measured using  
pulse current.  
Measured using  
pulse current.  
Measured using  
pulse current.  
VCE=5V  
2000  
1000  
500  
2000  
1000  
500  
200  
Ta=100°C  
25°C  
100  
50  
3V  
25°C  
1V  
200  
100  
200  
100  
50  
I
C
/I  
B
=100  
50  
25  
10  
20  
50  
10  
5
20  
10  
20  
10  
2
1
2
5
10 20 50 100 200 5001000  
1
2
5
10 20  
50 100 200 5001000  
(mA)  
1
2
5
10 20  
50 100 200 5001000  
COLLECTOR CURRENT : I (mA)  
C
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : IC (mA)  
Fig.5 DC current gain vs.  
collector current (  
Fig.4 DC current gain vs. collector  
current ( )  
Fig.6 Collector-emitter saturation  
voltage vs. collector current (  
)
)
2000  
1000  
500  
10000  
5000  
10000  
5000  
IC/IB=25  
Ta  
Pulsed  
=
25°C  
lC/lB=10  
Measured using  
pulse current.  
Measured using  
pulse current.  
I
C
/I  
B
=10  
Ta=−25°C  
25°C  
25  
2000  
1000  
500  
2000  
1000  
500  
50  
100°C  
100  
200  
100  
50  
Ta=100°C  
25°C  
200  
100  
200  
100  
50  
25°C  
20  
10  
5
50  
20  
10  
20  
10  
2
1
2
5
10 20  
50 100 200 5001000  
1
2
5
10 20 50 100 200 500 1000  
(mA)  
1
2
5
10 20 50 100 200 5001000  
COLLECTOR CURRENT : I (mA)  
C
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I (mA)  
C
Fig.7 Collector-emitter saturation  
voltage vs. collector current (  
Fig.8 Base-emitter saturation  
voltage vs. collector current (  
Fig.9 Base-emitter saturation voltage  
vs. collector current (  
)
)
)
www.rohm.com  
2012.01 - Rev.C  
2/3  
c
2012 ROHM Co., Ltd. All rights reserved.  
2SD2114K  
Data Sheet  
100  
50  
1000  
500  
10000  
5000  
Ta=25°C  
Ta  
=
25°C  
10V  
Ta  
1MHz  
0A  
=25°C  
f=1kHz  
VCE  
=
f=  
E
Vi=100mV(rms)  
Measured using  
pulse current.  
I =  
RL=1kΩ  
200  
100  
50  
2000  
1000  
500  
20  
10  
5
200  
100  
50  
2
1
20  
10  
5
0.5  
2
1
20  
10  
0.2  
0.1  
1 2  
5 10 20 50 100 200 500 1000  
EMITTER CURRENT : I  
0.1 0.2 0.5  
1
2
5
10 20  
50 100  
0.01 0.02 0.05 0.1 0.2 0.5  
1
2
5
10  
E
(mA)  
COLLECTOR TO BASE VOLTAGE : VCB (V)  
BASE CURRENT : I  
B
(mA)  
Fig.10 Gain bandwidth product vs.  
emitter current  
Fig.11 Collector output capacitance  
vs. collector-base voltage  
Fig.12 Output-on resistance vs.  
base current  
Ron measurement circuit  
RL=1kΩ  
Input  
vi  
I
B
Output  
v
V
1kHz  
100mV(rms)  
0
v
viv0  
0
Ron=  
×RL  
www.rohm.com  
2012.01 - Rev.C  
3/3  
c
2012 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-  
controller or other safety device). ROHM shall bear no responsibility in any way for use of any  
of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
R1120A  

相关型号:

2SD2114KT146W

High-current Gain Medium Power Transistor (20V, 0.5A)
ROHM

2SD2114KT147/UV

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KT147/V

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KT147/VW

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KT147/W

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KT246UV

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KT246V

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KT246VW

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KT246W

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM

2SD2114KU

High-current Gain MediumPower Transistor (20V, 0.5A)
ROHM

2SD2114KV

High-current Gain MediumPower Transistor (20V, 0.5A)
ROHM

2SD2114KW

High-current Gain MediumPower Transistor (20V, 0.5A)
ROHM