2SD2097TV2/Q [ROHM]
5000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, ATV, 3 PIN;
| 型号： | 2SD2097TV2/Q |
| 厂家： | 
ROHM |
| 描述： | 5000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, ATV, 3 PIN 开关 晶体管 电视 |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2098 / 2SD2118 / 2SD2097
Transistors
Low VCE(sat) transistor (strobe flash)
2SD2098 / 2SD2118 / 2SD2097
zExternal dimensions (Unit : mm)
zFeatures
1) Low VCE(sat).
2SD2098
+0.2
4.5
VCE(sat) = 0.25V (Typ.)
−0.1
+0.2
−0.1
1.5
1.6 0.1
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326.
(1) (2) (3)
+0.1
0.4
−0.05
0.5 0.1
3.0 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
zStructure
Abbreviated symbol : DJ∗
ROHM : MPT3
Epitaxial planar type
NPN silicon transistor
(1) Base
(2) Collector
(3) Emitter
EIAJ : SC-62
2SD2118
+
0.2
2.3
6.5 0.2
−
0.1
C0.5
+0.2
5.1
0.5 0.1
−0.1
0.65 0.1
0.75
0.9
0.55 0.1
1.0 0.2
2.3 0.2 2.3 0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD2097
2.5 0.2
6.8 0.2
0.65Max.
0.5 0.1
(1) (2)
2.54
(3)
2.54
1.05
0.45 0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
Rev.A
1/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
50
V
20
V
6
V
I
C
5
A(DC)
A(Pulse) ∗1
Collector current
I
CP
10
0.5
2SD2098
∗2
W
2
Collector power
dissipation
PC
1
2SD2118
2SD2097
10
W(Tc=25°C)
∗3
1
W
Junction temperature
Storage temperature
∗1 Single pulse Pw=10ms
Tj
150
°C
°C
Tstg
−55 to +150
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm2 or larger.
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
50
20
6
I
I
I
C
=50µA
=1mA
−
−
V
C
−
−
V
E
=50µA
CB=40V
EB=5V
I
CBO
EBO
CE(sat)
FE
−
−
0.5
0.5
1.0
390
−
µA
µA
V
V
V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
DC current transfer ratio
V
−
0.3
−
I
C/I
B
=4A/0.1A
∗
∗
h
120
−
−
V
V
V
CE=2V, I
C
=0.5A
=−50mA, f=100MHz
=0A, f=1MHz
Transition frequency
f
T
150
35
MHz
pF
CE=6V, I
E
Output capacitance
Cob
−
−
CE=20V, I
E
∗ Measured using pulse current.
zPackaging specifications and hFE
Package
Code
Taping
T100
TL
2500
−
TV2
2500
−
Type
hFE
Basic ordering unit (pieces)
1000
2SD2098
2SD2118
2SD2097
QR
QR
QR
−
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
Rev.A
2/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
zElectrical characteristic curves
5
4
3
2
5000
10
50mA
45mA
Ta=25°C
Ta=25°C
V
CE=2V
30mA
25mA
20mA
5
2000
1000
500
2
1
Ta=100°C
25°C
15mA
10mA
−25°C
V
CE=5V
0.5
40mA
0.2
0.1
35mA
200
100
50
2V
1V
0.05
5mA
0.02
0.01
5m
20
1
0
10
5
2m
1m
0
I
B
=0mA
1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1
2
5 10
0.2 0.4 0.6 0.8 1.0
1.2 1.4
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 DC current gain vs.
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
collector current ( Ι )
5000
5000
2
V
CE=1V
VCE=2V
Ta=25°C
2000
1000
500
2000
1000
1
Ta=100°C
25°C
Ta=100°C
25°C
0.5
−25°C
−25°C
500
0.2
0.1
200
100
50
200
100
50
0.05
I
C/I
B
=50
20
20
40
0.02
0.01
30
10
10
5
10
5
1m 2m 5m0.010.020.050.10.2 0.5 1
2
5
10
1m 2m 5m0.010.02 0.05 0.10.2 0.5
1
2
5 10
2m 5m 0.01 0.02 0.05 0.1 0.2 0.5
1
2
5 10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig.6 Collector-emitter
collector current ( ΙΙ )
collector current ( ΙΙΙ )
saturation voltage vs.
collector current ( Ι )
2
1
2
1
2
1
lC/lB
=30
lC/lB
=40
lC/lB
=10
0.5
0.5
0.5
Ta=100°C
25°C
Ta=100°C
25°C
Ta=100°C
25°C
0.2
0.1
0.2
0.1
−25°C
0.2
0.1
−25°C
−25°C
0.05
0.05
0.05
0.02
0.01
0.02
0.01
0.02
0.01
2m 5m 0.010.02 0.05 0.1 0.2 0.5
1
2
5 10
2m 5m0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
2m 5m 0.010.02 0.05 0.1 0.2 0.5
1
2
5
10
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I (A)
C
Fig.8 Collector-emitter
Fig.9 Collector-emitter
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( ΙΙΙ )
saturation voltage vs.
collector current (IV)
saturation voltage vs.
collector current ( ΙΙ )
Rev.A
3/4
2SD2098 / 2SD2118 / 2SD2097
Transistors
2
1000
500
1000
Ta=25°C
CE=6V
lC/lB
=50
Ta=25°C
V
f=1MHz
1
500
I
I
C
=0A
E=0A
200
100
50
0.5
Ta=100°C
25°C
200
100
50
Cib
0.2
0.1
−25°C
20
10
5
0.05
Cob
20
10
0.02
0.01
2
1
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
2m 5m 0.010.02 0.05 0.1 0.2 0.5
1
2
5
10
0.1 0.2 0.5
1
2
5
10 20
50
COLLECTOR CURRENT : I (A)
C
EMITTER CURRENT : I (A)
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.11 Gain bandwidth product vs.
emitter current
Fig.10 Collector-emitter
Fig.12 Collector output capacitance vs.
collector-base voltage
saturation voltage vs.
collector current (V)
Emitter input capacitance vs.
emitter-base voltage
Ta=25(°C)
Ta=25 (°C)
Single pulse
50
Single pulse
50
Recommended land
pattern
20
10
5
20
10
5
Ic max (Pulse)
Ic max (Pulse)
Ic max (Pulse)
Pw
Pw
=
=
1ms
10ms
2
1
2
1
DC
500m
500m
200m
100m
50m
200m
100m
50m
20m
10m
20m
10m
0.2 0.5
1
2
5 10 20 50100200 500
0.2 0.5
1
2
5
10 20 50100200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.13 Safe operating area
(2SD2098)
Fig.14 Safe operating area
(2SD2118)
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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