2SD1863TV2/P [ROHM]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | 2SD1863TV2/P |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon 开关 晶体管 |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
!External dimensions (Unit : mm)
!Features
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
2SD1898
+0.2
4.5
−0.1
+0.2
−0.1
1.5
1.6±0.1
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
(1) (2) (3)
+0.1
0.4
−0.05
0.5±0.1
0.4±0.1
0.4±0.1
1.5±0.1
1.5±0.1
3.0±0.2
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
!Structure
Epitaxial planer type
NPN silicon transistor
Abbreviated symbol : DF
2SD1768S
4±0.2
2SD1733
2±0.2
+
0.2
2.3
6.5
±
0.2
−
0.1
C0.5
+
0.2
5.1
−
0.1
0.5±
0.1
+0.15
−0.05
0.45
0.65±0.1
0.75
0.9
0.2 2.3±
+0.15
+0.4
0.55
±0.1
0.45
2.5
0.5
−0.05
−0.1
2.3±
0.2
5
1.0±0.2
(1) (2) (3)
(1) (2) (3)
Taping specifications
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1863
2.5±0.2
6.8±0.2
0.65Max.
0.5±0.1
(1) (2)
(3)
2.54
2.54
1.05
0.45±0.1
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
1/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!Absolute maximum ratings (Ta=25°C)
Limits
Parameter
Symbol
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
120
V
80
V
5
V
1
A (DC)
A (Pulse)∗1
W
Collector current
I
C
2
0.5
2SD1898
2
W
W
∗3
1
Collector power
dissipation
2SD1733
P
C
10
W (Tc=25°C)
2SD1768S
2SD1863
0.3
W
1
W
°C
°C
∗2
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
∗3 When mounted on a 40×40×0.7mm ceramic board.
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
Conditions
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
120
80
5
V
V
I
I
I
C
=
=
50µA
1mA
−
−
C
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
2SD1863
BVEBO
ICBO
−
−
V
E
=
50µA
−
−
1
µA
µA
−
V
V
CB
EB
=
100V
I
EBO
−
−
1
=
4V
120
82
120
−
−
390
390
390
0.4
−
DC current
2SD1733, 2SD1898
h
FE
−
−
V
CE
=
3V, I
C
=
0.5A
∗
transfer ratio
2SD1768S
Collector-emitter saturation voltage
Transition frequency
−
−
V
CE(sat)
0.15
100
20
V
I
C/I
B
=
500mA/20mA
f
T
−
MHz
pF
V
V
CE
CB
=
10V, I
10V, I
E
E
=−50mA, f
=100MHz
Output capacitance
Cob
−
−
=
=
0A, f 1MHz
=
∗ Measured using pulse current
2/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!Packaging specifications and hFE
Package
Taping
Code
T100
TL
TP
TV2
hFE
Basic ordering unit (pieces)
1000 2500 5000 2500
Type
2SD1898
2SD1733
2SD1768S
PQR
PQR
QR
R
−
−
−
−
−
−
−
−
−
−
−
2SD1863
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82~180
120~270
180~390
!Electrical characteristic curves
1000
Ta=25°C
Ta=25°C
Ta=25°C
V
CE=5V
6mA
5mA
4mA
1.0
0.8
0.6
0.4
0.2
100
10
1000
VCE=3V
3mA
2mA
1V
100
0
1
1mA
I
B
=0mA
0
0
0.1
0
2
4
6
8
10
0
10
100
1000
(mA)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : I
C
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
Fig.1 Grounded emitter propagation
characteristics
1000
Ta=25°C
Ta=25°C
f=1MHz
Ta=25°C
V
CE=5V
500
IE=0A
Ic=0A
200
100
50
2.0
100
10
1
1.0
0.5
20
10
5
0.2
I
C
/I
B
=20/1
0.1
10/1
0.05
2
0.02
0.01
0.1 0.2 0.5
1
2
5
10 20 50 100
1
2
5
10 20 50 100 200 500 1000
0
10
100
1000
(mA)
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
V)
EMITTER CURRENT : −I (mA)
E
COLLECTOR CURRENT : I
C
(V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Fig.5 Gain bandwidth product vs.
emitter current
Fig.4 Collector-emitter saturation
voltage vs. collector current
Emitter input capacitance vs.
emitter-base voltage
3/4
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
10
5
10
Ta=25°C
Single
non-repetitive
pulse
Ta=25°C
5
Single
Ic Max (Pulse)
Ic Max (Pulse)
non-repetitive
pulse
DC
2
2
Pw=10m
DC
1
Pw=100mS
1
500m
500m
S
200m
100m
50m
200m
100m
50m
20m
10m
5m
20m
10m
5m
2m
1m
0.1 0.2 0.5
2m
1m
0.1 0.2 0.5
1
2
5 10 20 50100200 5001000
1
2
5 10 20 501002005001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
(2SD1898)
Fig.7 Safe operating area
(2SD1863)
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
相关型号：
2SD1863TV2/Q
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 PIN
ROHM
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