2SD1861 [ROHM]
Power transistor (40V, 2A); 功率晶体管（ 40V ， 2A ）
| 型号： | 2SD1861 |
| 厂家： | 
ROHM |
| 描述： | Power transistor (40V, 2A) |
| 文件： | 总1页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1759 / 2SD1861
Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
!External dimensions (Units : mm)
!Features
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
2SD1759
5.5
0.9
1.5
C0.5
!Equivalent circuit
0.8Min.
1.5
C
2.5
9.5
B
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
RBE 4kΩ
C
B
E
: Collector
: Base
: Emitter
2SD1861
E
2.5
6.8
!Absolute maximum ratings (Ta=25°C)
0.65Max.
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
40
VCBO
VCER
VEBO
0.5
40
V(RBE=10kΩ)
V
5
( )
( ) ( )
1
2 3
2
A(DC)
A(Pulse)
Collector current
IC
2.54 2.54
∗1
∗2
1.05
0.45
3
2SD1861
2SD1759
1
W
Collector power
dissipation
Taping specifications
P
C
1
10
W(TC=25°C)
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55~+150
∗1 Single pulse
PW=10ms
∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
!Packaging specifications and hFE
Type
2SD1759
CPT3
1k~200k
TL
2SD1861
Package
ATV
hFE
1k~
Code
TV2
Basic ordering unit (pieces)
2500
2500
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
40
40
5
Typ.
−
−
−
−
−
−
−
−
Max.
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
−
1
I
I
I
C
=50µA
=1mA , RBE=10kΩ
BVCBO
BVCEO
BVEBO
V
C
V
E
=50µA
CB=24V
EB=4V
I
CBO
EBO
CE(sat)
−
−
−
µA
µA
V
V
V
Emitter cutoff current
I
1
1.5
20000
−
Collector-emitter saturation voltage
V
I
C/I
B
=0.6mA/1.2mA
2SD1759
2SD1861
1000
1000
−
−
−
DC current
transfer ratio
hFE
V
CE/I
C=3V/0.5A
Output capacitance
Cob
11
−
pF
V
CB=10V , I =0A , f=1MHz
E
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