2SD1834T100 [ROHM]
Medium Power Transistor (60V, 1A); 中等功率晶体管（ 60V ， 1A ）
| 型号： | 2SD1834T100 |
| 厂家： | 
ROHM |
| 描述： | Medium Power Transistor (60V, 1A) |
| 文件： | 总3页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Medium Power Transistor (60V, 1A)
2SD1834
Features
Dimensions (Unit : mm)
1) Darlington connection for high DC current gain
(typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A)
2) High input impedance.
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
Inner circuit
0.4
0.5
3.0
C
0.4
0.4
1.5
1.5
(1)Base
(2)Collector
(3)Emitter
B
E
B : Base
C : Collector
E : Emitter
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
60
60
7
Unit
V
CBO
V
V
∗2
∗1
V
CES
EBO
V
V
1
A(DC)
A(Pulse)
Collector current
IC
2
0.5
2
Collector power dissipation
PC
W
∗3
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
∗1
∗2
∗3
Single pulse Pw=100ms
BE=0Ω
Mounted on a 40 40× t0.7mm ceramic substrate
R
×
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
60
60
7
−
−
−
−
−
−
−
−
V
V
I
I
I
C
=50μA
=100μA , RBE=0Ω
C
V
E
=50μA
CB=60V
EB=6V
I
CBO
EBO
FE
CE(sat)
−
−
1
μA
μA
−
V
V
V
Emitter cutoff current
I
1
DC current transfer ratio
h
2000
−
−
1.5
CE
/
I
C=3V/500mA
∗
Collector-emitter saturation voltage
Transition frequency
V
−
−
−
0.9
150
7
V
I
C/I
B=500mA/500μA
f
T
−
−
MHz
pF
V
CE=5V , I
CE=10V , I
E= −10mA , f=100MHz
Output capacitance
Cob
V
E=0A , f=1MHz
Measured using pulse current.
∗
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2010.02 - Rev.B
1/2
c
○ 2010 ROHM Co., Ltd. All rights reserved.
2SD1834
Data Sheet
Packaging specifications and hFE
Type
2SD1834
Package
MPT3
2k~
hFE
Marking
Code
DE∗
T100
1000
Basic ordering unit (pieces)
∗
Denotes hFE
Electrical characteristics curves
1
0.5
500k
Ta=25°C
Ta=25°C
CE=3V
Ta=25°C
V
10μA
9μA
8μA
0.5
200k
100k
PC=0.5W
0.4
0.3
0.2
7μA
0.2
0.1
50k
6μA
5μA
20k
10k
4μA
3μA
0.05
VCE=5V
5k
3V
2μA
1μA
0.1
0
0.02
0.01
2k
1k
IB=0μA
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation
characteristics
Fig.3 DC current gain vs. collector current
50
10
Ic Max Pulse
2
Ta=25°C
f=1MHz
Ta=25°C
5
I
E
=0A
Ic Max
1
20
10
0.5
0.2
2
I
C/
I
B
=1000
5
1
500
0.5
0.1
2
1
Ta=25°C
∗Single
0.2
0.1
0.05
nonrepetitive
pulse
0.5
0.5
1
2
5
10
20
50
100
0.5
1
2
5
10
20
50
100
0.01 0.02
0.05 0.1
0.2
0.5 1.0
2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
COLLECTOR CURRENT : IC (A)
Fig.6 Safe operating area
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 Collector output capacitance
vs. collector-base voltage
www.rohm.com
2010.02 - Rev.B
2/2
c
○ 2010 ROHM Co., Ltd. All rights reserved.
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R1010
A
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