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2SD1782KT146/QR [ROHM]

500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR;
2SD1782KT146/QR
型号： 2SD1782KT146/QR
厂家： ROHM    ROHM
描述：

500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR

晶体 晶体管
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2SD1782K  
Transistors  
Power Transistor (80V, 0.5A)  
2SD1782K  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low VCE(sat).  
2.9 0.2  
1.9 0.2  
0.95 0.95  
+
0.2  
VCE(sat) =0.2V(Typ.)  
(IC / IB=0.5 A / 50mA)  
2) High VCEO, VCEO=80V  
3) Complements the 2SB1198K.  
1.1  
−0.1  
0.8 0.1  
(2)  
(1)  
0~0.1  
(3)  
+
0.1  
0.15  
+
0.1  
−0.06  
0.4  
−0.05  
zStructure  
Epitaxial planar type  
NPN silicon transistor  
All terminals have  
same dimensions  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
Abbreviated symbol : AJ  
∗
Denotes hFE  
∗
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
80  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
VCBO  
VCEO  
VEBO  
80  
V
Emitter-base voltage  
Collector current  
5
V
I
C
0.5  
0.2  
150  
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
W
°C  
°C  
Tj  
Tstg  
−55 to +150  
Rev.A  
1/3  
2SD1782K  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
−
Max.  
−
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
80  
80  
5
I
I
I
C
=50  
=2mA  
=50  
µ
A
−
−
V
C
−
−
V
E
µ
A
I
CBO  
EBO  
CE(sat)  
FE  
−
−
0.5  
0.5  
0.5  
390  
−
µ
µ
A
A
V
V
CB=50V  
EB=4V  
Emitter cutoff current  
−
−
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
−
0.2  
−
/I  
CE=3V, I  
CE=10V, I  
CB=10V, I  
B
=500mA/50mA  
=100mA  
= −50mA, f=100MHz  
=0A, f=1MHz  
V
IC  
h
120  
−
−
V
V
V
C
Transition frequency  
f
T
120  
7.5  
E
MHz  
pF  
Output capacitance  
Cob  
−
−
E
zPackaging specifications and hFE  
hFE values are classified as follows :  
Item  
Q
R
Package  
Code  
Taping  
T146  
hFE  
120 to 270 180 to 390  
Basic ordering  
unit (pieces)  
3000  
hFE  
QR  
Type  
2SD1782K  
zElectrical characteristic curves  
500  
0.5  
0.4  
1000  
500  
4.5mA  
5.0mA  
VCE=3V  
Ta=25°C  
VCE=3V  
4.0mA  
3.5mA  
3.0mA  
2.5mA  
2.0mA  
200  
100  
50  
Ta=100°C  
25°C  
−25°C  
Ta=100°C  
25°C  
−25°C  
200  
0.3  
0.2  
1.5mA  
100  
50  
20  
10  
5
1.0mA  
0.5mA  
0.1  
0
20  
10  
2
1
I
B
=0mA  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
BASE TO EMITTER VOLTAGE : VBE (V)  
0
0.4  
0.8  
1.2  
1.6 2.0  
1
2
5
10 20  
50 100 200 5001000  
(mA)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR CURRENT : I  
C
Fig.3 DC current gain vs. collector  
current  
Fig.1 Grounded emitter propagation  
characteristics  
Fig.2 Grounded emitter output  
characteristics  
Rev.A  
2/3  
2SD1782K  
Transistors  
1000  
500  
1000  
500  
1000  
500  
Ta=25°C  
lC/lB  
=10  
lC/lB=20  
200  
100  
200  
100  
50  
200  
100  
50  
Ta=100°C  
25°C  
−25°C  
Ta=100°C  
25°C  
−25°C  
I
C/I  
B
=50  
50  
20  
10  
20  
10  
20  
10  
20  
10  
1
2
5
10 20  
50 100 200 5001000  
1
2
5
10 20  
50 100 200 5001000  
(mA)  
1
2
5
10 20  
50 100 200 500 1000  
COLLECTOR CURRENT : I  
C
(mA)  
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : IC (mA)  
Fig.4 Collector-emitter saturation voltage  
Fig.5 Collector-emitter saturation voltage  
vs. collector current (  
Fig.6 Collector-emitter saturation voltage  
vs. collector current (  
)
)
vs. collector current (  
)
1000  
500  
1000  
500  
1000  
500  
Ta  
VCE=10V  
=
25°C  
lC/lB=50  
Ta  
1MHz  
0A  
0A  
=
25°C  
f
=
I
I
E
=
=
C
200  
Cib  
100  
50  
200  
100  
50  
200  
Ta=100°C  
25°C  
−25°C  
100  
50  
20  
10  
5
Cob  
20  
10  
20  
10  
2
1
−1 −2  
−5 −10 −20 −50 −100−200 −500−1000  
EMITTER CURRENT : I  
1
2
5
10 20  
50 100 200 5001000  
(mA)  
0.1 0.2 0.5  
1
2
5
10 20 50 100  
E
(mA)  
COLLECTOR CURRENT : I  
C
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.8 Gain bandwidth product vs.  
emitter current  
Fig.9 Collector output capacitance vs.  
collector-base voltage  
Fig.7 Collector-emitter saturation voltage  
vs. collector current (  
)
Emitter input capacitance vs.  
emitter-base voltage  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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