2SD1758TL/Q [ROHM]
暂无描述;
| 型号： | 2SD1758TL/Q |
| 厂家： | 
ROHM |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1766 / 2SD1758 / 2SD1862
Transistors
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
zExternal dimensions (Unit : mm)
zFeatures
1) Low VCE(sat).
2SD1766
2SD1758
VCE(sat) = 0.5V(Typ.)
（IC / IB = 2A / 0.2A）
2) Complements the 2SB1188 / 2SB1182 /
2SB1240.
+0.2
−0.1
4.5
+
0.2
2.3
6.5 0.2
0.2
−
0.1
+0.2
−0.1
1.5
C0.5
1.6 0.1
+
0.1
5.1
0.5 0.1
−
(1) (2) (3)
0.65 0.1
+0.1
0.75
0.4
−0.05
0.9
0.5 0.1
3.0 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
0.55 0.1
1.0 0.2
2.3 0.2 2.3 0.2
(1) (2) (3)
Abbreviated symbol : DB
∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
zStructure
Epitaxial planar type
NPN silicon transistor
2SD1862
2.5 0.2
6.8 0.2
0.65Max.
0.5 0.1
(1) (2)
2.54 2.54
(3)
1.05
0.45 0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Denotes hFE
∗
zAbsolute maximum ratings (Ta=25°C)
Limits
40
32
5
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Unit
VCBO
VCEO
VEBO
V
V
V
2
A (DC)
I
C
Collector current
2.5
A (Pulse)
W
1
∗
ICP
0.5
2
2SD1766
Collector
power
2
∗
P
C
1
10
1
W
W (Tc=25°C
W
2SD1758
2SD1862
dissipation
)
∗
3
Tj
150
°C
°C
Junction temperature
Storage temperature
1 Single pulse, Pw=20ms
Tstg
−55 to +150
∗
∗
∗
2 When mounted on a 40
×40×0.7 mm ceramic board.
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
Rev.A
1/3
2SD1766 / 2SD1758 / 2SD1862
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ. Max. Unit
Conditions
BVCBO
BVCEO
BVEBO
40
32
5
−
−
−
−
V
V
V
I
C
=50
=1mA
=50
µ
A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC
−
−
IE
µ
A
I
CBO
−
−
1
µ
A
A
V
CB=20V
EB=4V
Collector cutoff current
Emitter cutoff current
I
EBO
−
−
1
µ
V
2SD1766,2SD1758,
DC current
82
120
−
−
390
390
0.8
−
h
FE
V
CE=3V, I =0.5A
C
−
∗
transfer ratio
2SD1862
−
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
0.5
100
30
V
IC
/IB
=2A/0.2A
= −500mA, f=100MHz
=0A, f=1MHz
∗
∗
f
T
−
MHz
pF
V
V
CE=5V, I
E
Output capacitance
Cob
−
−
CB=10V, I
E
Measured using pulse current.
∗
zPackaging specifications and hFE
Package
Taping
Code
Basic ordering
unit (pieces)
T100
1000
TL
2500
−
TV2
Type
hFE
2500
2SD1766
2SD1758
2SD1862
PQR
PQR
QR
−
−
−
−
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
0.5
0.4
0.3
0.2
Ta=25°C
Ta
VCE=3V
=
25°C
Ta=25°C
2000
1000
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
3.0mA
500
500
200
100
50
200
100
50
V
CE=3V
1V
20
10
5
0.9mA
0.6mA
0.3mA
0.1
0
2
1
0
IB=0A
20
0
0.4
0.8
1.2
1.6
2.0
5
10 20
50 100 200 500 1A 2A
(mA)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : I
C
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs. collector
current
Fig.1 Grounded emitter propagation
characteristics
Rev.A
2/3
2SD1766 / 2SD1758 / 2SD1862
Transistors
1000
2
1
Ta=25°C
Ta
VCE=5V
=
25°C
Ta=25°C
500
500
IC/IB=10
200
100
200
100
0.5
IC/IB=50
0.2
0.1
50
20
50
20
10
10 20 50 100 200 500 1A 2A
20
−1 −2
−5 −10 −20 −50 −100−200 −500 −1A
EMITTER CURRENT : I
5
5
10 20
50 100 200 500 1A 2A
(mA)
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I
C
E
(mA)
Fig.6 Transition frequency vs. emitter
current
Fig.4 Collector-emitter saturation
voltage vs. collector current
Fig.5 Collector-emitter saturation
voltage vs. collector current
1000
5
2
5
Ta
=
25°C
1MHz
0A
0A
f
I
I
=
2
1
500
E
=
C=
1
∗
Cib
P
W
=100ms
200
100
50
0.5
0.5
∗
∗
Pw=10ms
100ms
0.2
0.1
0.2
DC
Cob
0.1
0.05
0.05
T
∗
c
=25°C
T
∗
a
=
25°C
Single
nonrepetitive
pulse
Single
nonrepetitive
pulse
20
10
0.02
0.01
0.02
0.01
0.5
1
2
5
10
20
0.1 0.2
0.5
1
2
5
10 20
50
0.1 0.2
0.5
1
2
5
10 20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Collector output capacitance vs.
collector-base voltage
Fig.9 Safe operating area
(2SD1758)
Fig.8 Safe operating area
(2SD1766)
Emitter input capacitance vs.
emitter-base voltage
3
Pw=10ms
2
Ic Max
Ic Max Pulse
Pw=100ms
1
0.5
DC
0.2
0.1
0.05
Ta=25°C
Single
nonrepetitive
pulse
0.2 0.5
1
2
5
10 20
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SD1862)
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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