2SCR513R [ROHM]
根据市场需求，提供从超小型到功率型的封装，以节能高可靠性为开发理念的多种产品线。;
| 型号： | 2SCR513R |
| 厂家： | 
ROHM |
| 描述： | 根据市场需求，提供从超小型到功率型的封装，以节能高可靠性为开发理念的多种产品线。 |
| 文件： | 总7页 (文件大小：1765K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SCR513R
NPN 1.0A 50V Middle Power Transistor
Datasheet
lOutline
Parameter
Value
TSMT3
ꢀ
V
CEO
50V
I
C
1A
ꢀ
SOT-346T
SC-96
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ꢀ
ꢀ
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llFeatures
1)Suitable for Middle Power Driver
llInner circuit
2)Complementary PNP Types:2SAR513R
3)Low V
CE(sat)
ꢀV =350mV (Max.)
CE(sat)
ꢀ(I /I =500mA/25mA)
C B
llApplication
LOW FREQUENCYAMPLIFIER, HIGH SPEED SWITCHING
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llPackaging specifications
Basic
Package
size
Taping Reel size Tape width
Part No.
Package
ordering
Marking
NC
code
(mm)
(mm)
unit.(pcs)
2SCR513R
TSMT3
2928
TL
180
8
3000
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
1/6
20150730 - Rev.003
ꢀ
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2SCR513R
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Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
50
50
V
6
V
1
A
Collector current
Power dissipation
*1
ICP
2
0.5
A
*2
PD
W
W
℃
℃
*3
PD
1.0
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
50
Typ.
Max.
-
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
BVCBO
BVCEO
I = 100μA
-
V
V
C
I = 1mA
50
-
-
C
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I = 100μA
6
-
-
V
μA
μA
mV
-
E
V
CB
V
EB
= 50V
= 4V
-
-
1.0
1.0
350
450
IEBO
-
-
-
130
-
*4
Collector-emitter saturation voltage
DC current gain
I = 500mA, I = 25mA
C
V
B
CE(sat)
hFE
V
CE
= 2V, I = 50mA
180
C
V
= 10V, I = -200mA,
E
CE
*4
Transition frequency
Output capacitance
Turn-On time
-
-
-
-
-
360
7
-
-
-
-
-
MHz
pF
ns
f
T
f = 100MHz
V
CB
= 10V, I = 0A,
E
Cob
ton
tstg
tf
f = 1MHz
I = 500mA,
C
40
I
I
= 50mA,
= -50mA,
⋍ 10V,
B1
B2
Storage time
410
75
ns
V
CC
R = 20Ω
See test circuit
L
Fall time
ns
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*1 P =10ms Single pulse
w
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(40×40×0.7mm).
*4 Pulsed
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ꢀ
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/6
20150730 - Rev.003
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2SCR513R
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.1 Ground Emitter Propagation
Fig.2 Typical Output Characteristics
ꢀꢀꢀꢀCharacteristics
Fig.3 DC Current Gain vs. Collector
Fig.4 DC Current Gain vs. Collector
ꢀꢀꢀꢀCurrent (I)
ꢀꢀꢀꢀCurrent (II)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/6
20150730 - Rev.003
ꢀ ꢀ ꢀ
2SCR513R
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.5 Collector-Emitter Saturation
Fig.6 Collector-Emitter Saturation
ꢀꢀꢀꢀVoltage vs. Collector Current (I)
ꢀꢀꢀꢀVoltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation Voltage
Fig.8 Gain Bandwidth Product vs.
ꢀꢀꢀꢀvs. Collector Current
ꢀꢀꢀꢀEmitter Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/6
20150730 - Rev.003
ꢀ ꢀ ꢀ
2SCR513R
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.9 Emitter Input Capacitance vs.
ꢀꢀꢀꢀEmitter-Base Voltage
Fig.10 Safe Operating Area
ꢀꢀꢀ Collector Output Capacitance vs.
ꢀꢀꢀ Collector-Base Voltage
SWITCHING TIME TEST CIRCUIT
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/6
20150730 - Rev.003
2SCR513R
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/6
20150730 - Rev.003
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