2SC5866TLR [ROHM]
Medium power transistor (60V, 2A); 中等功率晶体管（ 60V ， 2A ）
| 型号： | 2SC5866TLR |
| 厂家： | 
ROHM |
| 描述： | Medium power transistor (60V, 2A) |
| 文件： | 总4页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Medium power transistor (60V, 2A)
2SC5866
Features
Dimensions (Unit : mm)
1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1.0m, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
2.8
1.6
TSMT3
4) Complements the 2SA2094
Each lead has same dimensions
(1)Base
0.3 0.6
(2)Emitter
(3)Collector
Abbreviated symbol : VL
Applications
Low frequency amplifier
High speed switching
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Code
Taping
TL
Type
Basic ordering unit
(pieces)
3000
2SC5866
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
60
60
6
V
V
V
A
A
I
C
2
Collector current
Power dissipation
∗
1
2
I
CP
4
∗
PC
500
mW
Junction temperature
Tj
150
°C
°C
Range of storage temperature
Tstg
−55 to +150
∗
1 Pw=10ms
∗
2 Each terminal mounted on a recommended land.
www.rohm.com
2011.03 - Rev.A
1/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
2SC5866
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Max.
−
Conditions
Unit
V
Collector−base breakdown voltage
Collector−emitter breakdown voltage
BVCBO
BVCEO
BVEBO
60
60
6
−
I
I
C
=
100μA
−
−
−
V
C=
1mA
V
−
I
E
=
100μA
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
−
−
μA
μA
V
CB
=
40V
−
−
−
1.0
1.0
500
390
−
I
CBO
EBO
CE(sat)
FE
V
EB
=
4V
I
1
Collector−emitter staturation voltage
DC current gain
IC=1A, IB=
0.1A ∗
V
200
mV
−
−
120
−
V
CE
=
2V, I
C
=100mA
h
1
Transition frequency
200
fT
MHz
pF
V
V
CE
=
=
10V, I
10V, I
E
= −100mA, f=
10MHz∗
−
CB
E=0mA, f=1MHz
Collector output capacitance
Turn-on time
−
−
−
−
10
50
C
ob
on
stg
ns
ns
ns
T
−
−
−
I
I
I
V
C
=
2A,
B1
=2000mA
Storage time
120
T
B2= −200mA
∗
2
Fall time
CC 25V
Tf
35
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits
hFE RANK
Q
R
120-270
180-390
Electrical characteristic curves
1000
1000
1000
Ta=25°C
VCE=2V
Ta=25°C
CE=5V
V
CC=25V
Ta=125°C
V
IC/IB=10/1
Tstg
100
V
CE=2V
100
10
1
V
CE=3V
Ta=25°C
Ta= −40°C
Tf
100
Ton
10
10
0.01
1
0.001
0.1
1
10
0.01
0.1
1
C
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Switching Time
Fig.2 DC current gain vs. collector
current
Fig.3 DC current gain vs. collector
current
10
10
10
1
Ta=25°C
IC/IB=10/1
IC/IB=10/1
Ta= −40°C
1
1
Ta=125°C
Ta=25°C
Ta=125°C
0.1
0.1
0.01
0.1
Ta=25°C
Ta= −40°C
IC/IB=20/1
I
C/I
B
=10/1
0.01
0.01
0.001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
Fig.5 Collector-emitter saturation voltage
vs. collector current
www.rohm.com
2011.03 - Rev.A
2/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
2SC5866
Data Sheet
10
1000
100
100
VCE=2V
Ta=25°C
f=1MHz
Ta=25°C
CE=10V
V
1
Ta=125°C
10
Ta=25°C
0.1
10
1
Ta= −40°C
0.01
1
0
0.5
1
1.5
−0.001
−0.01
−0.1
−1
(A)
−10
0.1
1
10
100
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER CURRENT : I
E
Fig.7 Ground emitter propagation
characteristics
Fig.8 Transition frequency
Fig.9 Collector output capacitance
Switching characteristics measurement circuits
RL=12.5Ω
VIN
I
B1
B2
I
C
VCC 25V
P
W
I
P
W
50 S
Duty cycle 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
www.rohm.com
2011.03 - Rev.A
3/3
c
○ 2011 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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