2SC5730TLQ [ROHM]
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN;![2SC5730TLQ](http://pdffile.icpdf.com/pdf2/p00292/img/icpdf/2SC5730TLR_1770350_icpdf.jpg)
型号: | 2SC5730TLQ |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总4页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SC5730
Transistor
Medium power transistor (30V, 1.0A)
2SC5730
!External dimensions (Units : mm)
!Features
1) High speed switching. (Tf : Typ. : 35ns at I
C
= 1.0A)
2.8
1.6
TSMT3
2) Low saturation voltage, typically
(Typ. : 150mV at I
C
= 500mA, I = 50mA)
B
3) Strong discharge power for inductive load and
capacitance load.
(1) Base
(2) Emitter
(3) Collector
4) Complements the 2SA2048
Each lead has same dimensions
0.3 0.6
Abbreviated symbol : UM
!Applications
Small signal low frequency amplifier
High speed switching
!Structure
NPN Silicon epitaxial planar transistor
!Packaging specifications
Package
Code
Taping
TL
Type
Basic ordering unit
(pieces)
3000
2SC5730
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
30
30
6
V
V
V
A
A
I
C
1
Collector current
Power dissipation
1
2
I
CP
2
P
C
500
mW
Junction temperature
Tj
150
°C
°C
Range of storage temperature
Tstg
−55~+150
1 Pw=10ms
2 Each terminal mounted on a recommended land.
1/3
2SC5730
Transistor
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
−
Conditions
Unit
V
Collector−base breakdown voltage BVCBO
30
30
6
−
I
I
I
C
=
=
100µA
1mA
BVCEO
BVEBO
−
−
−
V
C
Collector−emitter breakdown voltage
Emitter−base breakdown voltage
Collector cut-off current
V
−
E
=
100µA
−
−
µA
µA
V
V
CB
EB
=
20V
−
−
−
1.0
1.0
300
390
−
I
CBO
EBO
CE(sat)
FE
Emitter cut-off current
=
4V
I
Collector−emitter staturation voltage
DC current gain
IC=500mA, IB=50mA
V
150
mV
−
−
120
−
V
V
V
CE
CE
CB
=
=
=
2V, I
C
=
100mA
h
1
Transition frequency
270
10V, I
10V, I
E
E
= −100mA, f=10MHz
fT
MHz
pF
=
0mA,2
f
=
1MHz
−
Collector output capacitance
Turn-on time
−
−
−
−
10
30
Cob
Ton
Tstg
ns
ns
ns
−
−
−
I
I
I
C
=
1A,
B1
=0.1A
Storage time
120
B2= −0.1A
~
Fall time
Tf
V
CC 25V
35
1 Non repetitive pulse
2 See switching charactaristics measurement cicuits
!hFE RANK
Q
R
120-270
180-390
!Electrical characteristic curves
10
1000
100
10
1000
100
V
CE=2V
Ta=25°C
CC=25V
/I =10/1
Ta=100°C
1ms
V
I
C B
10ms
1
Tstg
Ta=−40°C
Ta=25°C
100ms
0.1
0.01
DC
Tf
10
Ton
Single non repoetitive pulse
1
0.001
0.1
1
0.001
0.01
0.1
1
10
10
100
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
Fig.1 Safe operating area
Fig.3 DC current gain vs. collector
current
1000
10
10
IC/IB=10/1
Ta=25°C
CE=5V
Ta=25°C
V
V
CE=3V
1
0.1
1
100
10
Ta=100°C
V
CE=2V
0.1
IC/IB=20/1
Ta=25°C
Ta=−40°C
IC/IB=10/1
0.01
0.001
0.01
0.001
1
0.01
0.1
1
10
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C (A)
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. collector current
vs. collector current
Fig.4 DC current gain vs. collector
current
2/3
2SC5730
Transistor
1000
100
10
10
I
C/IB=10/1
Ta=25°C
VCE=10V
1
Ta=−40°C
Ta=100°C
Ta=100°C
1
Ta=25°C
Ta=25°C
0.1
10
1
Ta=−40°C
0.1
0.001
0.01
0.01
0.1
1
10
0
0.5
1
1.5
−0.001
−0.01
−0.1
−1
(A
−10
COLLECTOR CURRENT : IC (A)
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : I
E
)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Ground emitter propagation
characteristics
Fig.9 Transition frequency
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
V)
BASE TO COLLECTOR VOLTAGE : VCB
(
Fig.10 Collector output capacitance
!Switching characteristics measurement circuits
RL=25Ω
V
IN
I
I
B1
B2
I
C
VCC 25V
P
W
P
W
50
S
Duty cycle 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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