2SC5730TLQ [ROHM]

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN;
2SC5730TLQ
型号: 2SC5730TLQ
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT3, 3 PIN

开关 光电二极管 晶体管
文件: 总4页 (文件大小:45K)
中文:  中文翻译
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2SC5730  
Transistor  
Medium power transistor (30V, 1.0A)  
2SC5730  
!External dimensions (Units : mm)  
!Features  
1) High speed switching. (Tf : Typ. : 35ns at I  
C
= 1.0A)  
2.8  
1.6  
TSMT3  
2) Low saturation voltage, typically  
(Typ. : 150mV at I  
C
= 500mA, I = 50mA)  
B
3) Strong discharge power for inductive load and  
capacitance load.  
(1) Base  
(2) Emitter  
(3) Collector  
4) Complements the 2SA2048  
Each lead has same dimensions  
0.3 0.6  
Abbreviated symbol : UM  
!Applications  
Small signal low frequency amplifier  
High speed switching  
!Structure  
NPN Silicon epitaxial planar transistor  
!Packaging specifications  
Package  
Code  
Taping  
TL  
Type  
Basic ordering unit  
(pieces)  
3000  
2SC5730  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
30  
30  
6
V
V
V
A
A
I
C
1
Collector current  
Power dissipation  
1
2
I
CP  
2
P
C
500  
mW  
Junction temperature  
Tj  
150  
°C  
°C  
Range of storage temperature  
Tstg  
55~+150  
1 Pw=10ms  
2 Each terminal mounted on a recommended land.  
1/3  
2SC5730  
Transistor  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Conditions  
Unit  
V
Collectorbase breakdown voltage BVCBO  
30  
30  
6
I
I
I
C
=
=
100µA  
1mA  
BVCEO  
BVEBO  
V
C
Collectoremitter breakdown voltage  
Emitterbase breakdown voltage  
Collector cut-off current  
V
E
=
100µA  
µA  
µA  
V
V
CB  
EB  
=
20V  
1.0  
1.0  
300  
390  
I
CBO  
EBO  
CE(sat)  
FE  
Emitter cut-off current  
=
4V  
I
Collectoremitter staturation voltage  
DC current gain  
IC=500mA, IB=50mA  
V
150  
mV  
120  
V
V
V
CE  
CE  
CB  
=
=
=
2V, I  
C
=
100mA  
h
1
Transition frequency  
270  
10V, I  
10V, I  
E
E
= 100mA, f=10MHz  
fT  
MHz  
pF  
=
0mA,2  
f
=
1MHz  
Collector output capacitance  
Turn-on time  
10  
30  
Cob  
Ton  
Tstg  
ns  
ns  
ns  
I
I
I
C
=
1A,  
B1  
=0.1A  
Storage time  
120  
B2= 0.1A  
~
Fall time  
Tf  
V
CC 25V  
35  
1 Non repetitive pulse  
2 See switching charactaristics measurement cicuits  
!hFE RANK  
Q
R
120-270  
180-390  
!Electrical characteristic curves  
10  
1000  
100  
10  
1000  
100  
V
CE=2V  
Ta=25°C  
CC=25V  
/I =10/1  
Ta=100°C  
1ms  
V
I
C B  
10ms  
1
Tstg  
Ta=−40°C  
Ta=25°C  
100ms  
0.1  
0.01  
DC  
Tf  
10  
Ton  
Single non repoetitive pulse  
1
0.001  
0.1  
1
0.001  
0.01  
0.1  
1
10  
10  
100  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR CURRENT : IC (A)  
Fig.2 Switching Time  
Fig.1 Safe operating area  
Fig.3 DC current gain vs. collector  
current  
1000  
10  
10  
IC/IB=10/1  
Ta=25°C  
CE=5V  
Ta=25°C  
V
V
CE=3V  
1
0.1  
1
100  
10  
Ta=100°C  
V
CE=2V  
0.1  
IC/IB=20/1  
Ta=25°C  
Ta=−40°C  
IC/IB=10/1  
0.01  
0.001  
0.01  
0.001  
1
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C (A)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage  
vs. collector current  
vs. collector current  
Fig.4 DC current gain vs. collector  
current  
2/3  
2SC5730  
Transistor  
1000  
100  
10  
10  
I
C/IB=10/1  
Ta=25°C  
VCE=10V  
1
Ta=−40°C  
Ta=100°C  
Ta=100°C  
1
Ta=25°C  
Ta=25°C  
0.1  
10  
1
Ta=−40°C  
0.1  
0.001  
0.01  
0.01  
0.1  
1
10  
0
0.5  
1
1.5  
0.001  
0.01  
0.1  
1  
(A  
10  
COLLECTOR CURRENT : IC (A)  
BASE TO EMITTER VOLTAGE : VBE (V)  
EMITTER CURRENT : I  
E
)
Fig.7 Base-emitter saturation voltage  
vs. collector current  
Fig.8 Ground emitter propagation  
characteristics  
Fig.9 Transition frequency  
100  
Ta=25°C  
f=1MHz  
10  
1
0.1  
1
10  
100  
V)  
BASE TO COLLECTOR VOLTAGE : VCB  
(
Fig.10 Collector output capacitance  
!Switching characteristics measurement circuits  
RL=25  
V
IN  
I
I
B1  
B2  
I
C
VCC 25V  
P
W
P
W
50  
S
Duty cycle 1%  
I
B1  
I
B2  
Base current  
waveform  
90%  
I
C
Collector current  
waveform  
10%  
Ton  
Tstg Tf  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document use silicon as a basic material.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.0  

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