2SC4617FRATLQ [ROHM]
Small Signal Bipolar Transistor,;型号: | 2SC4617FRATLQ |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, |
文件: | 总4页 (文件大小:1092K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AEC-Q101 Qualified
General purpose transistor (50V, 0.15A)
2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA
Features
Dimensions (Unit : mm)
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 22A1037AKFRA/ 2SA1576AFRA
2S
C
2
4
1
2
K
F
RA
2SC4081FRA
2SA1774FRA / 2SA2029FHA
1.25
2.1
1.6
2.8
Structure
Epitaxial planar type
NPN silicon transistor
0.1Min.
0.3Min.
Each lead has same dimensions
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
JEDEC : SOT-323
(3) Collector
JEDEC : SOT-346
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC4617FRA
2SC5658FHA
1.2
( )
1
0.2 0.8 0.2
( )
2
( )
3
( )
2
(3)
0.8
1.6
( )
1
0.15Max.
0.1Min.
(1) Base
(2) Emitter
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
ROHM : VMT3
JEDEC : SOT-416
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
* Denotes hFE
Absolute maximum (Ta=25C)
Parameter
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
60
50
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
7
V
I
C
0.15
0.2
A
2SC2412KFRA, 2SC4081FRA
Collector power
dissipation
PC
W
2SC4617FRA, 2SC5658FHA
0.15
150
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55 to +150
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
Conditions
BVCBO
BVCEO
BVEBO
60
50
7
V
V
I
I
I
C
=50μA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
C=1mA
−
−
V
E=50μA
I
CBO
EBO
FE
CE(sat)
−
−
0.1
0.1
390
0.4
−
μA
μA
−
V
CB=60V
I
−
−
Emitter cutoff current
V
EB=7V
CE=6V, I
/I =50mA/5mA
h
120
−
−
V
C
=1mA
DC current transfer ratio
V
−
V
I
C B
Collector-emitter saturation voltage
Transition frequency
f
T
−
180
2
MHz
pF
V
CE=12V, I
CE=12V, I
E=−2mA, f=100MHz
Cob
−
3.5
V
E=0A, f=1MHz
Output capacitance
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2012.01 - Rev.D
1/3
c
○ 2012 ROHM Co., Ltd. All rights reserved.
2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA
Data Sheet
Packaging specifications and hFE
Taping
TL
Package
Code
T146
3000
T106
3000
−
T2L
Basic ordering
unit (pieces)
3000
8000
h
FE
Type
2SC2412KFRA
QR
−
−
−
−
−
2SC4081FRA
QR
QR
QR
−
−
−
2S 17
C
4
6
F
R
A
−
−
2SC5658FHA
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
Electrical characterristic curves
0.50mA
100
80
50
10
8
Ta=25°C
30μA
27μA
24μA
21μA
Ta=25°C
VCE=6V
20
10
5
0.30mA
0.25mA
0.20mA
0.15mA
60
6
18μA
15μA
12μA
9μA
C
°
2
1
100
=
40
4
Ta
0.10mA
0.05mA
0.5
6μA
20
0
2
0
3μA
0.2
0.1
IB=0A
I
B=0A
0
0.4
0.8
1.2
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
500
0.5
500
Ta=25°C
Ta=25°C
VCE=5V
Ta=100°C
0.2
25°C
V
CE=5V
200
100
50
200
100
50
3V
−55°C
I
C/I
B
=50
1V
20
0.1
10
0.05
0.02
0.01
20
10
20
10
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig. 6 Collector-emitter saturation
voltage vs. collector current
collector current ( Ι )
collector current ( ΙΙ )
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2012.01 - Rev.D
2/3
c
○ 2012 ROHM Co., Ltd. All rights reserved.
2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA
Data Sheet
0.5
0.5
Ta=25°C
IC/IB=10
IC/IB=50
V
CE=6V
500
200
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
Ta=100°C
25°C
0.1
−55°C
0.05
0.05
100
50
0.02
0.01
0.02
0.01
−0.5 −1
−2
−5 −10 −20
−50 −100
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2
0.5
1
2
5
10
20
50 100
EMITTER CURRENT : I
E
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Gain bandwidth product vs.
emitter current
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
voltage vs. collector current ( Ι )
voltage vs. collector current (ΙΙ)
20
Ta=25°C
Ta=25°C
f=32MH
Z
200
100
50
f
I
I
=1MHz
VCB=6V
E
=0A
=0A
10
5
C
2
1
20
10
−0.2
−0.5
−1
−2
−5
(mA)
−10
0.2
0.5
1
2
5
10 20
50
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.11 Base-collector time constant
vs. emitter current
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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2012.01 - Rev.D
3/3
c
○ 2012 ROHM Co., Ltd. All rights reserved.
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a
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Please be sure to implement in your equipment using the Products safety measures to guard
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