2SC4132T100R [ROHM]

Power Transistor (120V, 1.5A); 功率晶体管( 120V , 1.5A )
2SC4132T100R
型号: 2SC4132T100R
厂家: ROHM    ROHM
描述:

Power Transistor (120V, 1.5A)
功率晶体管( 120V , 1.5A )

晶体 晶体管
文件: 总4页 (文件大小:81K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC4132 / 2SD1857  
Transistors  
Power Transistor (120V, 1.5A)  
2SC4132 / 2SD1857  
zExternal dimensions (Unit : mm)  
zFeatures  
1) High breakdown voltage. (BVCEO = 120V)  
2) Low collector output capacitance.  
(Typ. 20pF at VCB = 10V)  
2SC4132  
4.0  
1.0  
2.5  
0.5  
(
)
1
3) High transition frequency. (fT = 80MHz)  
4) Complements the 2SB1236.  
(
)
2
3
(
)
(1) Base(Gate)  
(2) Collector(Drain)  
(3) Emitter(Source)  
ROHM : MPT3  
EIAJ : SC-62  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
120  
120  
5
Unit  
V
VCBO  
VCEO  
VEBO  
V
2SD1857  
6.8  
V
2.5  
I
C
2
A
Collector current  
I
CP  
3
A
1
0.5  
2
0.65Max.  
2SC4132  
2SD1857  
Collector power  
dissipation  
2
3
P
C
W
0.5  
1
(
1
)
( ) ( )  
2 3  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
2.54 2.54  
Tstg  
55 to +150  
1.05  
0.45  
1
2
3
Single pulse Pw = 10ms  
Taping specifications  
When mounted on a 40 × 40 × 0.7mm ceramic board.  
When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more.  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : ATV  
zPackaging specifications and hFE  
Type  
2SC4132  
2SD1857  
Package  
MPT3  
ATV  
QR  
hFE  
PQR  
Marking  
Code  
CB  
T100  
1000  
TV2  
Basic ordering unit (pieces)  
Denotes hFE  
2500  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
120  
120  
5
V
V
I
I
I
C
C
= 50µA  
= 1mA  
V
E
= 50µA  
CB = 100V  
EB = 4V  
I
CBO  
EBO  
CE(sat)  
FE  
82  
1
µA  
µA  
V
V
V
Emitter cutoff current  
I
1
Collector-emitter saturation voltage  
DC current transfer ratio  
V
2
I
C
/I  
B
= 1A/0.1A  
= 5V/0.1A  
CE = 5V , I = 0.1A , f = 30MHz  
CB = 10V , I = 0A , f = 1MHz  
390  
MHz  
h
V
V
V
CE/IC  
Transition frequency  
f
T
80  
E
Output capacitance  
Cob  
20  
pF  
E
Measured using pulse current.  
Rev.A  
1/3  
2SC4132 / 2SD1857  
Transistors  
zElectrical characteristics curves  
1.0  
10  
5
1000  
Ta=  
25°C  
Ta=25°C  
VCE=5V  
500  
10mA  
9mA  
8mA  
7mA  
0.8  
0.6  
0.4  
2
1
200  
100  
V
CE=10V  
6mA  
5mA  
0.5  
50  
5V  
0.2  
0.1  
20  
10  
5
3mA  
2mA  
1mA  
0.05  
0.2  
0
0.02  
0.01  
2
1
IB=0mA  
0
0.2 0.4 0.6 0.8  
1.0 1.2 1.4 1.6  
1.8  
0
1
2
3
4
5
0.01 0.02  
0.05  
0.1 0.2  
0.5  
1
2
5
10  
COLLECTOR CURRENT : I (A)  
C
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
BASE TO EMITTER VOLTAGE : VBE (V)  
Fig.2 Ground emitter propagation characteristics  
Fig.3 DC current gain vs. collector current ( )  
Fig.1 Ground emitter output characteristics  
10  
1000  
10  
I
C/I  
B
=10  
Ta=  
25°C  
V
CE=5V  
5
500  
5
Ta=  
100°C  
25°C  
2
200  
100  
2
1
Ta  
=
25°C  
25°C  
100°C  
1
25°C  
0.5  
50  
100°C  
0.5  
V
V
BE(sat)  
20  
10  
5
0.2  
0.2  
Ta  
=
I
C
/I  
B
=5V  
0.1  
0.1  
0.05  
0.05  
25°C  
10  
25°C  
CE(sat)  
2
1
0.02  
0.01  
0.02  
0.01  
0.01 0.02  
0.05  
0.1 0.2  
0.5  
1
2
5
10  
0.01 0.02  
0.05 0.1  
0.2  
0.5  
1
2
5
10  
0.01 0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I (A)  
C
Fig.4 DC current gain vs. collector current (  
)
Fig.6 Collector-emitter saturation  
Base-emitter saturation  
Fig.5 Collector-emitter saturation voltage  
vs. collector current  
vs. collector current  
5
1000  
1000  
Pw  
Ta=25°C  
Ta  
f=1MHz  
=0A  
=25°C  
=
I
C Max(PULSE)  
2
1
10ms  
500  
V
CE=5V  
500  
I
E
500m  
200  
100  
200  
100  
200m  
100m  
50  
50  
50m  
20  
10  
5
20  
10  
5
20m  
10m  
Ta=25°C  
Single  
5m  
nonrepetitive  
pulse  
2m  
1m  
2
1
2
11  
0.1 0.2  
0.5  
1
2
5
10 20  
50 100 200  
500  
0.1 0.2  
0.5  
1
2
5
10 20  
50 100  
2  
5 10 20  
50 100 200  
500 1000  
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER CURRENT : I (mA)  
E
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.9 Safe operating area (2SC4132)  
Fig.8 Collector output capacitance  
vs. collector-base voltage  
Fig.7 Gain bandwidth product vs. emitter current  
Rev.A  
2/3  
2SC4132 / 2SD1857  
Transistors  
10  
5
Ta=25°C  
Single  
I
C Max(PULSE)  
nonrepetitive  
pulse  
2
1
Pw  
=
10ms  
0.5  
DC  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0.002  
0.0001.1 0.2 0.5  
1
2
5 10 20 50 100 200 500 1000  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.10 Safe operating area (2SD1857)  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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