2SC4097T106P [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN;
| 型号： | 2SC4097T106P |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2411K / 2SC4097 / 2SC1741S
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K / 2SC4097 / 2SC1741S
!Features
!External dimensions (Units : mm)
CMax
1) High I
.
2SC2411K
2SC4097
I
.
CMax =
0.5mA
2.9 0.2
CE(sat)
2) Low V
.
+0.2
2.0 0.2
1.3 0.1
1.1
−0.1
1.9 0.2
0.9 0.1
0.7 0.1
0.8 0.1
0.95 0.95
Optimal for low voltage operation.
3) Complements the
0.65 0.65
(1) (2)
0.2
(2)
(1)
0 ∼ 0.1
0 ∼ 0.1
2SA1036K / 2SA1577 / 2SA854S.
(3)
(3)
All terminals have same dimensions
All terminals have same dimensions
+0.1
+0.1
0.3
0.15
0.15 0.05
−0
+0.1
−0.06
0.4
−0.05
!Structure
Epitaxial planar type
NPN silicon transistor
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
ROHM : UMT3
EIAJ : SC-70
Abbreviated symbol : C*
Abbreviated symbol : C*
2SC1741S
4
0.2
2 0.2
+
0.15
0.45
−
0.05
+
0.15
+
0.4
0.45
2.5
0.5
−
0.05
−
0.1
5
(1) (2) (3)
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
Denotes hFE
*
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
40
32
V
5
0.5
V
I
C
A
*
Collector power dissipation
Junction temperature
Storage temperature
P
C
0.2
W
°C
°C
Tj
150
Tstg
−55 ∼ +150
PC must not be exceeded.
*
2SC2411K / 2SC4097 / 2SC1741S
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
40
32
5
I
I
I
C
C
E
=
=
100µA
1mA
−
−
V
−
−
V
=
100µA
I
CBO
EBO
−
−
1
µA
µA
−
V
CB
EB
=
=
20V
4V
Emitter cutoff current
I
−
−
1
V
2SC2411K, 2SC4097
2SC1741S
82
120
−
−
390
560
0.4
−
DC current
transfer ratio
h
FE
V
CE
=
3V, I = 100mA
C
−
−
Collector-emitter saturation voltage
V
CE(sat)
−
V
I
C/I
B
= 500mA/50mA
f
T
−
250
6.0
MHz
pF
V
CE
CB
=
=
5V, I
E
=
−20mA, f = 100MHz
Transition frequency
Output capacitance
Cob
−
−
V
10V, I
E
=
0A, f
=
1MHz
!Packaging Specifications and hFE
Package
Code
Taping
T146
3000
T106
3000
−
TP
hFE
Basic ordering unit (pieces)
Type
5000
2SC2411K
2SC4097
2SC1741S
PQR
PQR
QRS
−
−
−
−
−
FE
h
values are classified as follows:
Item
P
Q
R
S
hFE
82 ∼ 180
120 ∼ 270 180 ∼ 390 270 ∼ 560
!Electrical characteristic curves
500
400
300
200
100
0
1000
100
Ta
=
25°C
Ta=
25°C
V
CE=
6V
500
2mA
200
100
50
1.8mA
1.6mA
1.4mA
1.2mA
Ta
=
100°C
−25°C
−55°C
80°C
25°C
20
10
5
1.0mA
50
0.8mA
0.6mA
2
1
0.4mA
0.5
0.05mA
IB=0A
0.2mA
0A
0.2
0.1
IB=
0
0
1
2
3
4
5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
Fig.3 Grounded emitter output
characteristics(Ι)
characteristics(ΙΙ)
2SC2411K / 2SC4097 / 2SC1741S
Transistors
1
1000
500
500
Ta
=
B
25°C
10
VCE=3V
Ta 25°C
=
lC/l
=
VCE 5V
=
0.5
200
100
50
200
100
50
0.2
0.1
C
°
25
0.05
20
10
0.02
0.5
0.1 0.2 0.5
1
2
5 10 20 50 100 200 5001000
1
2
5
10 20
50 100 200 500 1000
−0.5 −1
−2
−5
−10 −20
−50
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I (mA)
C
EMITTER CURRENT : IE mA)
(
Fig.5 DC current gain vs. collector current
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig. 6 Gain bandwidth product vs.
emitter current
Ta 25°C
=
50
f
I
I
1MHz
=
E
0A
0A
=
C
=
20
10
5
2
0.5
1
2
5
10
20
50
V)
COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB
(
(
V)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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