2SC3359STP/P [ROHM]
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | 2SC3359STP/P |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, 晶体 晶体管 开关 |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC3359S
Transistors
Power Transistor (80V, 0.3A)
2SC3359S
zFeatures
1) High breakdown voltage, BVCEO=80V
2) Low saturation voltage, typically VCE(sat) =0.2V at IB=0.3A / 0.03A
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
Unit
V
80
80
V
5
0.3
V
A
Collector power dissipation
Junction temperature
Storage temperature
P
C
0.3
W
C
Tj
150
Tstg
−55 to +150
C
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Min.
80
80
5
Typ.
−
−
−
−
Max.
Unit
Conditions
BVCEO
BVCBO
BVEBO
ICBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
−
−
−
0.5
0.5
0.5
390
−
V
V
V
A
A
V
−
IC
=
1mA
50µA
50µA
IC
=
IE
VCB
VEB
=
−
−
−
120
50
−
=
=
80V
IEBO
Emitter outoff current
−
0.2
4V
VCE(sat)
hFE
Collector-emitter saturation voltage
DC current transfer ratio
VC/ICB
=
0.3V/0.03A
0.1A
−0.01A , f
0A , f 1MHz
−
150
5
VCE 3V, IC
=
=
fT
Transition frequency
MHz VCE
pF VCB
=5V , IE
=
=
100MHz
Output capacitance
Cob
8
=
10V , IE
=
=
zPackaging specification and hFE
Type
Package
hFE
2SC3359S
SPT
QR
Code
TP
Basic orderin unit (pieces)
5000
Rev.A
1/2
2SC3359S
Transistors
zElectrical characteristic curves
1000
500
100
1000
500
500
A
Ta=25 C
Ta=25 C
Ta=25 C
450
A
V
CE=5V
400
350
A
A
80
60
40
20
0
Ta=125 C
25 C
VCE=10V
200
100
200
100
300
250
200
150
A
A
A
A
-40 C
5V
3V
1V
50
50
100
50
A
A
A
20
10
20
10
IB=0
0
1.0
2.0
3.0
4.0
5.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
500
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5001000
V
CE-COLLECTOR-EMITTER VOLTAGE (V)
I
C-COLLECTOR CURRENT (mA)
IC-COLLECTOR CURRENT (mA)
Fig.1 Typical output characteristics
Fig.2 DC current gain vs. collector current
Fig.3 DC current gain vs. collector current
1.8
1.8
Ta=25 C
/ I =10
Ta=25 C
Ta=25 C
IC / IB=10
I
C
B
V
CE=5V
1.6
1.4
1.6
1.4
0.3
1.2
1.0
0.8
1.2
1.0
0.8
0.2
0.1
0
Ta=-40 C
Ta=
-
40 C
25 C
25 C
0.6
0.4
0.6
0.4
Ta=125 C
125 C
125 C
25 C
40 C
-
0.2
0
0.2
0
1
2
5
10 20 50 100 200 500 1000
1
2
5
10 20 50 100 200 500 1000
1
2
5
10 20 50 100 200 500 1000
I
C-COLLECTOR CURRENT (mA)
I
C-COLLECTOR CURRENT (mA)
I
C-COLLECTOR CURRENT (mA)
Fig.4 Collector emitter saturation voltage
vs. collector current
Fig.5 Base emitter saturation voltage
vs. collector current
Fig.6 Base emitter 'ON' voltage
vs. collector ccurrent
1000
500
100
Ta=25 C
CE=5V
Ta=25 C
V
f=1M
Z
50
Cib
200
100
20
10
5
Cob
50
20
10
2
1
0.5
1
2
5
10 20
50
1
2
5
10 20 50 100 200 500 1000
REVERSE BIAS VOLTAGE (V)
I
C-COLLECTOR CURRENT (mA)
Fig.7 Capacitance vs. reverse bias voltage
Fig.8 Current gain-bandwidth product
vs. collector current
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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