2SC3359STP/P [ROHM]

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,;
2SC3359STP/P
型号: 2SC3359STP/P
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,

晶体 晶体管 开关
文件: 总3页 (文件大小:70K)
中文:  中文翻译
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2SC3359S  
Transistors  
Power Transistor (80V, 0.3A)  
2SC3359S  
zFeatures  
1) High breakdown voltage, BVCEO=80V  
2) Low saturation voltage, typically VCE(sat) =0.2V at IB=0.3A / 0.03A  
zElectrical characteristics (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Limits  
Unit  
V
80  
80  
V
5
0.3  
V
A
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
0.3  
W
C
Tj  
150  
Tstg  
55 to +150  
C
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Min.  
80  
80  
5
Typ.  
Max.  
Unit  
Conditions  
BVCEO  
BVCBO  
BVEBO  
ICBO  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector outoff current  
0.5  
0.5  
0.5  
390  
V
V
V
A
A
V
IC  
=
1mA  
50µA  
50µA  
IC  
=
IE  
VCB  
VEB  
=
120  
50  
=
=
80V  
IEBO  
Emitter outoff current  
0.2  
4V  
VCE(sat)  
hFE  
Collector-emitter saturation voltage  
DC current transfer ratio  
VC/ICB  
=
0.3V/0.03A  
0.1A  
0.01A , f  
0A , f 1MHz  
150  
5
VCE 3V, IC  
=
=
fT  
Transition frequency  
MHz VCE  
pF VCB  
=5V , IE  
=
=
100MHz  
Output capacitance  
Cob  
8
=
10V , IE  
=
=
zPackaging specification and hFE  
Type  
Package  
hFE  
2SC3359S  
SPT  
QR  
Code  
TP  
Basic orderin unit (pieces)  
5000  
Rev.A  
1/2  
2SC3359S  
Transistors  
zElectrical characteristic curves  
1000  
500  
100  
1000  
500  
500  
A
Ta=25 C  
Ta=25 C  
Ta=25 C  
450  
A
V
CE=5V  
400  
350  
A
A
80  
60  
40  
20  
0
Ta=125 C  
25 C  
VCE=10V  
200  
100  
200  
100  
300  
250  
200  
150  
A
A
A
A
-40 C  
5V  
3V  
1V  
50  
50  
100  
50  
A
A
A
20  
10  
20  
10  
IB=0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200  
500  
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5001000  
V
CE-COLLECTOR-EMITTER VOLTAGE (V)  
I
C-COLLECTOR CURRENT (mA)  
IC-COLLECTOR CURRENT (mA)  
Fig.1 Typical output characteristics  
Fig.2 DC current gain vs. collector current  
Fig.3 DC current gain vs. collector current  
1.8  
1.8  
Ta=25 C  
/ I =10  
Ta=25 C  
Ta=25 C  
IC / IB=10  
I
C
B
V
CE=5V  
1.6  
1.4  
1.6  
1.4  
0.3  
1.2  
1.0  
0.8  
1.2  
1.0  
0.8  
0.2  
0.1  
0
Ta=-40 C  
Ta=  
-
40 C  
25 C  
25 C  
0.6  
0.4  
0.6  
0.4  
Ta=125 C  
125 C  
125 C  
25 C  
40 C  
-
0.2  
0
0.2  
0
1
2
5
10 20 50 100 200 500 1000  
1
2
5
10 20 50 100 200 500 1000  
1
2
5
10 20 50 100 200 500 1000  
I
C-COLLECTOR CURRENT (mA)  
I
C-COLLECTOR CURRENT (mA)  
I
C-COLLECTOR CURRENT (mA)  
Fig.4 Collector emitter saturation voltage  
vs. collector current  
Fig.5 Base emitter saturation voltage  
vs. collector current  
Fig.6 Base emitter 'ON' voltage  
vs. collector ccurrent  
1000  
500  
100  
Ta=25 C  
CE=5V  
Ta=25 C  
V
f=1M  
Z
50  
Cib  
200  
100  
20  
10  
5
Cob  
50  
20  
10  
2
1
0.5  
1
2
5
10 20  
50  
1
2
5
10 20 50 100 200 500 1000  
REVERSE BIAS VOLTAGE (V)  
I
C-COLLECTOR CURRENT (mA)  
Fig.7 Capacitance vs. reverse bias voltage  
Fig.8 Current gain-bandwidth product  
vs. collector current  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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