2SC2389S/S [ROHM]
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon;型号: | 2SC2389S/S |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon 晶体 放大器 小信号双极晶体管 |
文件: | 总3页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SC4102 / 2SC3906K / 2SC2389S
Transistors
High-voltage Amplifier Transistor
(120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
zExternal dimensions (Unit : mm)
zFeatures
1) High breakdown voltage. (BVCEO = 120V)
2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.
2SC4102
1.25
2.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
120
120
V
5
50
V
0.1Min.
Each lead has same dimensions
I
C
mA
2SC4102 / 2SC3906K
0.2
Collector power
dissipation
P
C
W
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
2SC2389S
0.3
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
2SC3906K
zPackaging specifications and hFE
Type
2SC4102
UMT3
RS
2SC3906K
2SC2389S
Package
SMT3
SPT
RS
−
hFE
RS
1.6
Marking
Code
T
∗
T∗
T146
2.8
T106
3000
TP
Basic ordering unit (pieces)
Denotes hFE
3000
5000
∗
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
JEDEC : SOT-346
(3) Collector
2SC2389S
4
2
0.45
0.45
2.5 0.5
5
2
Taping specifications
( )
1
(
)
( )
3
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
BVCBO
BVCEO
BVEBO
Min.
120
120
5
Typ.
−
−
−
−
−
−
−
140
2.5
Max.
−
−
Unit
Conditions
V
V
I
I
I
C
=50µA
=1mA
C
−
V
E
=50µA
CB=100V
EB=4V
I
CBO
EBO
CE(sat)
FE
−
−
−
180
−
0.5
0.5
0.5
560
−
µA
µA
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
V
I
C/I
B
=10mA/1mA
=2mA
h
−
MHz
pF
V
V
V
CE=6V, IC
CE=12V, I
CB=12V, I
Transition frequency
f
T
E
=−2mA, f=100MHz
=0A, f=1MHz
Output capacitance
Cob
−
−
E
Rev.A
1/2
2SC4102 / 2SC3906K / 2SC2389S
Transistors
zElectrical characteristics curves
50
10
Ta
VCE=6V
=
25°C
Ta=25°C
25.0
22.5
20
10
5V
500
8
20.0
3V
17.5
5
6
4
15.0
12.5
200
100
V
CE
=
1V
2
1
10.0
7.5
0.5
5.0
2.5
2
0
50
0.2
0.1
I
B
=0µA
4
Ta
16
=
25°C
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
8
12
20
0.2
0.5
1
2
5
10 20
50
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter propagation characteristics
Fig.1 Ground emitter output characteristics
Fig.3 DC current gain vs. collector current
V
Ta
CE
=
6V
°C
IC/IB=10
°C
Ta
=
25
=
25
0.5
0.5
500
0.2
0.1
0.2
0.1
Ta
=
100
°C
200
100
IC/IB=50
25°C
−40°C
0.05
0.05
20
10
50
0.02
1
0.02
1
2
5
10
20
50
2
5
10
20
50
−0.5
−1
−2
−5
−10 −20
−50
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
E
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
Fig.5 Collector-emitter saturation voltage
vs. collector current (
Fig.6 Gain bandwidth product vs. emitter current
)
)
Ta
1MHz
0A
=25°C
Ta
=
25°C
1MHz
0A
f
=
f
I
=
20
10
20
10
I =
C
E
=
5
5
2
1
2
1
−0.5
1
2
5
10
20
−0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号:
2SC2389S/SE
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
2SC2389STP/R
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN
ROHM
2SC2389STP/RE
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
2SC2389STP/RS
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
2SC2389STP/SE
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
©2020 ICPDF网 联系我们和版权申明