2SC1740SR [ROHM]
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK ; 晶体管| BJT | NPN | 50V V（ BR ） CEO | 150MA I（C ） | SPAK\n
| 型号： | 2SC1740SR |
| 厂家： | 
ROHM |
| 描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
|
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
Transistors
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S
!External dimensions (Units : mm)
!Features
1) Low Cob.
2SC2412K
2SC4081
2SC4617
Cob=2.0pF (Typ.)
( )
1
2) Complements the 2SA1037AK /
2SA1576A / 2SA1774H /
2SA2029 / 2SA933AS.
( )
2
( )
3
1.25
2.1
0.8
1.6
1.6
2.8
0.1Min.
0.1Min.
0.3Min.
Each lead has same dimensions
Each lead has same dimensions
!Structure
Epitaxial planar type
NPN silicon transistor
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
JEDEC : SOT-323
(3) Collector
JEDEC : SOT-416
(3) Collector
JEDEC : SOT-346
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
2SC1740S
4±
0.2
2±0.2
1.2
0.2 0.8 0.2
( )
2
(3)
( )
1
+0.15
0.45
−0.05
0.15Max.
+0.15
+0.4
0.45
−0.05
2.5
0.5
−
0.1
5
(1) (2) (3)
(1) Base
(1) Emitter
ROHM : VMT3
(2) Emitter
(3) Collector
ROHM
EIAJ
: SPT
SC-72
(2) Collector
(3) Base
:
Abbreviated symbol: B*
* Denotes hFE
!Absolute maximum (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
60
50
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
7
V
I
C
0.15
0.2
A
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
P
C
0.15
0.3
W
2SC1740S
Junction temperature
Tj
150
°C
°C
Storage temperature
Tstg
−55~+150
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
60
50
7
I
I
I
C
=50µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
V
C=1mA
−
−
V
E=50µA
I
CBO
EBO
FE
CE(sat)
−
−
0.1
0.1
560
0.4
−
µA
µA
−
V
CB=60V
I
−
−
Emitter cutoff current
V
EB=7V
CE=6V, I
/I =50mA/5mA
h
120
−
−
V
C
=1mA
DC current transfer ratio
V
−
V
I
C B
Collector-emitter saturation voltage
Transition frequency
f
T
−
180
2
MHz
pF
V
V
CE=12V, I
CE=12V, I
E
E
=−2mA, f=100MHz
Cob
−
3.5
=0A, f=1MHz
Output capacitance
!Packaging specifications and hFE
Taping
Bulk
TP
Package
Code
T146
T106
3000
−
TL
T2L
Basic ordering
unit (pieces)
3000
3000
8000
5000
hFE
Type
2SC2412K QRS
−
−
−
−
−
−
−
−
−
2SC4081
2SC4617
2SC5658
QRS
QRS
QRS
−
−
−
−
−
−
−
−
−
2SC1740S QRS
−
hFE values are classified as follows :
Item
Q
R
S
hFE
120~270
180~390
270~560
!Electrical characterristic curves
0.50mA
100
50
10
Ta=25°C
30µA
V
CE=6V
Ta=25°C
27µA
24µA
21µA
20
10
5
80
60
40
8
6
4
0.30mA
0.25mA
0.20mA
0.15mA
18µA
15µA
12µA
9µA
C
°
2
1
100
=
Ta
0.10mA
0.05mA
0.5
6µA
20
0
2
0
3µA
0.2
0.1
IB=0A
I
B
=0A
12
0
0.4
0.8
1.2
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
Transistors
500
500
0.5
Ta=25°C
Ta=25°C
VCE=5V
Ta=100°C
0.2
25°C
V
CE=5V
3V
1V
200
100
50
200
100
50
−55°C
I
C/I
B
=50
20
10
0.1
0.05
0.02
0.01
20
10
20
10
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig. 6 Collector-emitter saturation
voltage vs. collector current
collector current ( Ι )
collector current ( ΙΙ )
0.5
0.2
0.5
IC/IB=10
IC/IB=50
Ta=25°C
V
CE=6V
500
200
Ta=100°C
25°C
0.2
0.1
−55°C
Ta=100°C
25°C
0.1
−55°C
0.05
0.05
0.02
0.01
100
50
0.02
0.01
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2
0.5
1
2
5
10
20
50 100
−0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
Fig.9 Gain bandwidth product vs.
emitter current
voltage vs. collector current ( Ι )
voltage vs. collector current (ΙΙ)
20
Ta=25°C
Ta=25°C
f=32MH
Z
200
100
50
f
I
I
=1MHz
V
CB=6V
E
=0A
=0A
10
5
C
2
1
20
10
−0.2
−0.5
−1
−2
−5
(mA)
−10
0.2
0.5
1
2
5
10 20
50
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.11 Base-collector time constant
vs. emitter current
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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